SEMITRANS®3
IGBT Modules
SKM 200GB173D
SKM 200GB173D1
SKM 200GAL173D
SKM 200GAR173D
Features
   
  
  
!     
 
   "! #
  $ % &
' #
( ) #  *+ 
&  " 
,*- , * -
.!
  /0  
  12 
Typical Applications*
+*     343 '
432 +*
,* "  432 ' /122 ,*
5"  %! !6
  #  
GB GAL GAR
Absolute Maximum Ratings .7 13 8*   #
Symbol Conditions Values Units
IGBT
*9 .:7 13 8* /422
&*.:7 /32 8* . 7 13 8* 112 +
. 7 <2 8* /32 +
&*= &*=71%&* 022 +
>9 ? 12
 ** 7 /122 @ >9 A 12 @
*9 B /422
.:7 /13 8* /2 C
Inverse Diode
&(.:7 /32 8* . 7 13 8* /32 +
. 7 <2 8* /22 +
&(= &(=71%&( 022 +
&( 7 /2 @ 6 .:7 /32 8* /D32 +
Freewheeling Diode
&(.:7 /32 8* . 7 13 8* 102 +
. 7 <2 8* /32 +
&(= &(=71%&( D22 +
&( 7 /2 @  .:7 /32 8* 1122 +
Module
&= 322 +
.: ' D2 666 E /32 8*
. ' D2 666 E /13 8*
 +* / 6 D222
Characteristics .7 13 8*   #
Symbol Conditions min. typ. max. Units
IGBT
>9 >9 7 *9 &*7 /2 + D< 33 $1
&*9 >9 72 *9 7 *9 .:7 13 8* 2/ 20 +
*92 .:7 13 8* /$3 /F
.:7 /13 8* /F 1/3
*9 >9 7 /3 .:7 138* //4 /00 G
.:7 /138* /40 /F G
*9 &* 7 /32 + >9 7 /3 .:7 138*6 0D 0F
.:7 /138*6 D3 3
* 12 (
* *9 7 13 >9 7 2 # 7 / H 1 (
* 233 (
I> >972 JE12 1222 *
 3<2 
=> 7 D G ** 7 /122 /22 
9 &*7 /32+ F3 K
## =>## 7 D G .:7 /13 8* 432 
# >9 7 ? /3 D2 
9## D3 K
=:'  &>-. 2/ LJM
SKM 200GB173D
1 14-03-2008 CHD © by SEMIKRON
SEMITRANS®3
IGBT Modules
SKM 200GB173D
SKM 200GB173D1
SKM 200GAL173D
SKM 200GAR173D
Features
   
  
  
!     
 
   "! #
  $ % &
' #
( ) #  *+ 
&  " 
,*- , * -
.!
  /0  
  12 
Typical Applications*
+*     343 '
432 +*
,* "  432 ' /122 ,*
5"  %! !6
  #  
GB GAL GAR
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
(7 9* &( 7 /32 +@ >9 7 2 .:7 13 8*6 11 14
.:7 /13 8*6 /F
(2 .:7 /13 8* /0 /3
(.:7 /13 8* D3 $1 G
&== &(7 /32 + .:7 /13 8* <3 +
I J 7 /222 +JC 0< C*
9 >9 7 '/3 @ ** 7 /122 K
=:',   201 LJM
FWD
(7 9* &( 7 /32 +@ >9 7 2 .:7 13 8*6 1 1D
.:7 /13 8*6 /<
(2 .:7 /13 8* /0 /3
(.:7 /13 8* 03 D3
&== &(7 /32 + .:7 /13 8* //2 +
I 32 C*
9 >9 7 '/3 @ ** 7 /122 K
=:'(,   21/ LJM
Module
*9 /3 12 
=**NE99N 6 ' .7 13 8* 203 G
.7 /13 8* 23 G
='   220< LJM
  O $ 0 3 
013
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
SKM 200GB173D
2 14-03-2008 CHD © by SEMIKRON
SEMITRANS®3
IGBT Modules
SKM 200GB173D
SKM 200GB173D1
SKM 200GAL173D
SKM 200GAR173D
Features
   
  
  
!     
 
   "! #
  $ % &
' #
( ) #  *+ 
&  " 
,*- , * -
.!
  /0  
  12 
Typical Applications*
+*     343 '
432 +*
,* "  432 ' /122 ,*
5"  %! !6
  #  
GB GAL GAR
Zth
Symbol Conditions Values Units
Zth(j-c)l
= 7 / 41 OJM
= 7 1 /F OJM
= 7 0 $F OJM
= 7 D 1/ OJM
 7 / 22FD$
 7 1 22//
 7 0 222//
 7 D 2
Zth(j-c)D
= 7 / 102 OJM
= 7 1 42 OJM
= 7 0 /4 OJM
= 7 D 0 OJM
 7 / 22<0F
 7 1 222$F
 7 0 2221<
 7 D 22221
SKM 200GB173D
3 14-03-2008 CHD © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 200GB173D
4 14-03-2008 CHD © by SEMIKRON
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ CAl diode recovered charge
SKM 200GB173D
5 14-03-2008 CHD © by SEMIKRON
* , 3$
>- * , 3$ >+ * , 34 P , 3$ >+= * , 3< P , 3$
SKM 200GB173D
6 14-03-2008 CHD © by SEMIKRON