SKM 200GB173D . 7 13 8* Absolute Maximum Ratings Symbol Conditions IGBT Values .: 7 13 8* *9 &* &*=71%&* Units /422 .: 7 /32 8* &*= # . 7 13 8* 112 + . 7 <2 8* /32 + 022 + ? 12 >9 /2 C . 7 13 8* /32 + . 7 <2 8* /22 + 022 + .: 7 /32 8* /D32 + . 7 13 8* 102 + . 7 <2 8* /32 + D22 + 1122 + 322 + .: ' D2 666 E /32 8* . ' D2 666 E /13 8* SEMITRANS(R) 3 ** 7 /122 @ *9 B /422 >9 A 12 @ .: 7 /13 8* Inverse Diode IGBT Modules &( .: 7 /32 8* &(= &(=71%&( SKM 200GB173D &( SKM 200GB173D1 Freewheeling Diode SKM 200GAL173D &( .: 7 /32 8* &(= &(=71%&( SKM 200GAR173D 7 /2 @ 6 &( 7 /2 @ .: 7 /32 8* Module Features ! & Characteristics Symbol Conditions IGBT " ! # $ % & ' # ( ) # *+ & " ,*- , * - . ! /0 12 >9 &*9 +* / 6 >9 7 >9 72 D222 *9 &* . 7 13 8* *9 7 *9 *9 *9 >9 &* 7 /3 7 /32 + >9 7 /3 I> *9 7 13 >9 7 2 => 7 D G ## =>## 7 D G # 9## = :' 1 D< 33 $1 .: 7 13 8* 2/ 20 .: 7 13 8* /$3 /F .: 7 /13 8* /F 1/3 .: 7 138* //4 /00 G .: 7 /138* /40 /F G 0D 0F D3 3 .: 7 138* # 7 / H >972 JE12 9 GAL max. * GB typ. 6 .: 7 /138* * * &>-. # min. 7 /2 + *92 Typical Applications* +* 343 ' 432 +* ,* " 432 ' /122 ,* 5 " %! ! 6 # = 7 /122 &*7 /32+ .: 7 /13 8* >9 7 ? /3 ** 6 Units + 12 1 ( ( 233 ( 1222 * 3<2 /22 F3 432 D2 K D3 K 2/ LJM GAR 14-03-2008 CHD (c) by SEMIKRON SKM 200GB173D Characteristics Symbol Conditions Inverse Diode ( 7 &( 9* 7 /32 +@ min. >9 72 .: 7 13 8* 6 .: 7 /13 8* (2 ( &== I SEMITRANS(R) 3 IGBT Modules &( 7 /32 + J 7 /222 +JC 9 >9 7 '/3 @ = :', ** typ. max. 11 14 Units /F 6 .: 7 /13 8* /0 /3 .: 7 /13 8* D3 $1 .: 7 /13 8* <3 0< G + C* 7 /122 K 201 LJM FWD ( 7 &( 9* 7 /32 +@ >9 72 .: 7 13 8* (2 SKM 200GB173D ( SKM 200GB173D1 SKM 200GAL173D &== I &( 7 /32 + SKM 200GAR173D 9 >9 = :'(, 7 '/3 @ ** 1 6 .: 7 /13 8* 1D /< 6 .: 7 /13 8* /0 /3 .: 7 /13 8* 03 D3 .: 7 /13 8* //2 32 + C* 7 /122 K 21/ LJM Module Features ! " ! # $ % & ' # ( ) # *+ & " ,*- , * - . ! /0 12 Typical Applications* +* 343 ' 432 +* ,* " 432 ' /122 ,* 5 " %! ! 6 # GB 2 GAL *9 =**NE99N /3 6 ' = ' O $ 12 .7 13 8* 203 G .7 /13 8* 23 G 0 220< LJM 3 013 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. GAR 14-03-2008 CHD (c) by SEMIKRON SKM 200GB173D Zth Symbol Zth(j-c)l = = = = (R) SEMITRANS 3 Conditions Values Units 7/ 71 70 7D 7/ 71 70 41 /F $F 1/ 22FD$ 22// 222// OJM OJM OJM OJM 7D 2 7/ 71 70 7D 7/ 71 70 102 42 /4 0 22<0F 222$F 2221< OJM OJM OJM OJM 7D 22221 Zth(j-c)D SKM 200GB173D1 = = = = SKM 200GAL173D IGBT Modules SKM 200GB173D SKM 200GAR173D Features ! " ! # $ % & ' # ( ) # *+ & " ,*- , * - . ! /0 12 Typical Applications* +* 343 ' 432 +* ,* " 432 ' /122 ,* 5 " %! ! 6 # GB 3 GAL GAR 14-03-2008 CHD (c) by SEMIKRON SKM 200GB173D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 14-03-2008 CHD (c) by SEMIKRON SKM 200GB173D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ CAl diode recovered charge 5 14-03-2008 CHD (c) by SEMIKRON SKM 200GB173D * , 3$ >- 6 * , 3$ >+ * , 34 P , 3$ 14-03-2008 CHD >+= * , 3< P , 3$ (c) by SEMIKRON