1. Product profile
1.1 General description
Symmetrical N-channel junction FETs in a SOT23 package.
1.2 Features
■High-speed switching
■Interchangeability of drain and source connections
■Low RDSon at zero gate voltage (< 30 Ωfor PMBFJ111).
1.3 Applications
■Analog switches
■Choppers
■Commutators
■Multiplexers
■Thin and thick film hybrids.
2. Pinning information
[1] Drain and source are interchangeable.
PMBFJ111; PMBFJ112;
PMBFJ113
N-channel junction FETs
Rev. 03 — 4 August 2004 Product data sheet
Table 1: Pinning
Pin Description[1] Simplified outline Symbol
1 drain
2 source
3 gate
SOT23
12
3
sym053
1
23
9397 750 13402 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 4 August 2004 2 of 8
Philips Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
3. Ordering information
4. Marking
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China
5. Limiting values
[1] Mounted on a ceramic substrate, 8 mm ×10 mm ×0.7 mm.
6. Thermal characteristics
[1] Mounted on a ceramic substrate, 8 mm ×10 mm ×0.7 mm.
[2] Mounted on printed circuit board.
Table 2: Ordering information
Type number Package
Name Description Version
PMBFJ111 - plastic surface mounted package; 3 leads SOT23
PMBFJ112
PMBFJ113
Table 3: Marking
Type number Marking code[1]
PMBFJ111 41*
PMBFJ112 42*
PMBFJ113 47*
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - ±40 V
VGSO gate-source voltage - −40 V
VGDO gate-drain voltage - −40 V
IGforward gate current (DC) - 50 mA
Ptot total power dissipation Tamb =25°C[1] - 300 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 150 °C
Table 5: Thermal characteristics
T
j
= P (R
th(j-t)
+R
th(t-s)
+R
th(s-a)
)+T
amb
.
Symbol Parameter Conditions Typ Unit
Rth(j-a) thermal resistance from junction to ambient [1] 430 K/W
thermal resistance from junction to ambient [2] 500 K/W
9397 750 13402 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 4 August 2004 3 of 8
Philips Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
7. Static characteristics
8. Dynamic characteristics
[1] Test conditions for switching times are as follows:
VDD =10V, V
GS =0VtoV
GSoff (all types);
VGSoff =−12 V, RL= 750 Ω(PMBFJ111);
VGSoff =−7 V, RL= 1550 Ω(PMBFJ112);
VGSoff =−5 V, RL= 3150 Ω(PMBFJ113).
Table 6: Static characteristics
T
j
=25
°
C.
Symbol Parameter Conditions Min Typ Max Unit
IGSS gate-source leakage current VGS =−15 V; VDS =0V - - −1nA
IDSS drain-source leakage current
PMBFJ111 VGS =0V; V
DS = 15 V 20 - - mA
PMBFJ112 VGS =0V; V
DS = 15 V 5 - - mA
PMBFJ113 VGS =0V; V
DS = 15 V 2 - - mA
V(BR)GSS gate-source breakdown voltage IG=−1µA; VDS =0V −40--V
VGSoff gate-source cut-off voltage
PMBFJ111 ID=1µA; VDS =5 V −10 - −3V
PMBFJ112 ID=1µA; VDS =5 V −5- −1V
PMBFJ113 ID=1µA; VDS =5 V −3- −0.5 V
RDSon drain-source on-state resistance
PMBFJ111 VGS = 0 V; VDS = 0.1 V - - 30 Ω
PMBFJ112 VGS = 0 V; VDS = 0.1 V - - 50 Ω
PMBFJ113 VGS = 0 V; VDS = 0.1 V - - 100 Ω
Table 7: Dynamic characteristics
Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance VDS =0V; V
GS =−10 V; f = 1 MHz - 6 - pF
VDS =0V; V
GS = 0 V; f = 1 MHz; Tamb =25°C - 22 28 pF
Crss feedback capacitance - 3 - pF
Switching times; see Figure 2
trrise time [1] -6-ns
ton turn-on time [1] -13-ns
tffall time [1] -15-ns
toff turn-off time [1] -35-ns
9397 750 13402 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 4 August 2004 4 of 8
Philips Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
Fig 1. Switching circuit.
Fig 2. Input and output waveforms.
mbk289
50 Ω
RL
DUT
10 µF
1 µF
VDD
10 nF
50 Ω
SAMPLING
SCOPE
50 Ω
mbk294
−VGS off toff
tf
ts
VGS = 0 V
Vi
Vo
10%
90%
90%
10%
ton
tr
td
9397 750 13402 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 4 August 2004 5 of 8
Philips Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
9. Package outline
Fig 3. Package outline.
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
9397 750 13402 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 4 August 2004 6 of 8
Philips Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
10. Revision history
Table 8: Revision history
Document ID Release date Data sheet status Change notice Order number Supersedes
PMBFJ111_112_113_
320040804 Product data sheet - 9397 750 13402 PMBFJ111_112_113_
CNV_2
Modifications: •The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
•Table 3 “Marking”: added new marking codes
PMBFJ111_112_113_
CNV_2 19971201 Product specification - not applicable -
Philips Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
9397 750 13402 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 4 August 2004 7 of 8
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights. Date of release: 4 August 2004
Document order number: 9397 750 13402
Published in The Netherlands
Philips Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3
8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 3
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . . 7
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
14 Contact information . . . . . . . . . . . . . . . . . . . . . 7
