2005-11-11
BFP460
1
NPN Silicon RF Transistor*
• For low voltage / low current applications
• Ideal for ESD protected low noise amplification
• Low noise figure: 1.1 dB at 1.8 GHz
• Excellent ESD performance
typical value > 1500V (HBM)
• High fT of 22 GHz
* Short-term description
12
3
4
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP460 ABs 1 = E 2 = C 3 = E 4=B - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0 °C
T
A
≤ 0 °C
VCEO
4.5
4.2
V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 1.5
Collector current IC50 mA
Base current IB5
Total power dissipation1)
TS ≤ 100°C Ptot 200 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 250 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
2005-11-11
BFP460
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 4.5 5.8 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0 ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0,5 V, IC = 0 IEBO - - 1 µA
DC current gain
IC = 20 mA, VCE = 3 V, pulse measured hFE 90 120 160 -
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BFP460
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 3 V, f = 1 GHz fT16 22 - GHz
Collector-base capacitance
VCB = 3 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.32 0.45 pF
Collector emitter capacitance
VCE = 3 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.28 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.55 -
Noise figure
IC = 5 mA, VCE = 3 V, ZS = ZSopt ,
f = 1.8 GHz
f = 3 GHz
F
-
-
1.1
1.35
-
-
dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
Gms - 17.5 - dB
Power gain, maximum available1)
IC = 20 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 3 GHz
Gma - 12.5 - dB
Transducer gain
IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1,8 GHz
f = 3 GHz
|S21e|2
-
-
15
10.5
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 20 mA, f = 1.8 GHz IP3- 27.5 - dBm
1dB Compression point at output
IC = 20 mA, VCE = 3 V, f = 1.8 GHz P-1dB - 11.5 -
1Gma = |S21 / S12| (k-(k²-1)1/2), Gms = S21 / S12
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFP460
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Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 2 4 6 8 10 V14
VCB
0
0.1
0.2
0.3
0.4
0.5
pF
0.7
CCB
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1800MHz -
0 10 20 30 40 mA 55
IC
5
7
9
11
13
15
17
19
21
23
25
27
29
dBm
33
IP3
1V
2V
3V
4V
Transition frequency fT= ƒ(IC)
f = 1 GHz
VCE = parameter in V
0 10 20 30 40 mA 60
IC
4
6
8
10
12
14
16
18
20
GHz
24
fT
3-4V
2V
1V
Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 3 V, IC = 20 mA
01234GHz 6
f
0
5
10
15
20
25
30
35
40
dB
50
G
Gms
Gma
|S21|²
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Power gain Gma, Gms = ƒ (IC)
VCE = 3V
f = parameter in GHz
0 10 20 30 40 mA 60
IC
4
6
8
10
12
14
16
18
20
dB
24
G
0.9
1.8
2.4
3
4
5
6
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
0.5 1 1.5 2 2.5 3 3.5 V4.5
VCE
4
6
8
10
12
14
16
18
20
dB
24
G
0.9
1.8
2.4
3
4
5
6
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Package SOT343
Package Outline
Foot Print
Marking Layout
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
Manufacturer
Date code (Year/Month)
Type code
2005, June
BGA420
Example
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3+0.1
2±0.2 ±0.1
0.9
12
34 A
+0.1
0.6 A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
2005-11-11
BFP460
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Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
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systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
