DS30041 Rev. 7 - 2 1 of 4 MMBT2222A
www.diodes.com ã Diodes Incorporated
MMBT2222A
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary PNP Type Available
(MMBT2907A)
·Ideal for Medium Power Amplification and
Switching
·Also Available in Lead Free Version
Characteristic Symbol MMBT2222A Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC600 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
JL
TOP VIEW
M
BC
H
G
D
K
C
BE
Mechanical Data
·Case: SOT-23, Molded Plastic
·Case material - UL Flammability Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 4, on Page 2
·Terminal Connections: See Diagram
·Marking (See Page 2): K1P
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approx.)
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
E
B
C
SPICE MODEL: MMBT2222A
DS30041 Rev. 7 - 2 2 of 4 MMBT2222A
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO 75 ¾VIC= 10mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾VIC= 10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾VIE = 10mA, IC = 0
Collector Cutoff Current ICBO ¾10 nA
mA
VCB = 60V, IE= 0
VCB = 60V, IE= 0, TA = 150°C
Collector Cutoff Current ICEX ¾10 nA VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current IEBO ¾10 nA VEB = 3.0V, IC = 0
Base Cutoff Current IBL ¾20 nA VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE
35
50
75
100
40
50
35
¾
¾
¾
300
¾
¾
¾
¾
IC = 100mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.3
1.0 VIC= 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(SAT) 0.6
¾
1.2
2.0 VIC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾8pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo —25pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT300 ¾MHz VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure NF ¾4.0 dB VCE = 10V, IC = 100mA,
RS = 1.0kW, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td¾10 ns VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time tr¾25 ns
Storage Time ts¾225 ns VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time tf¾60 ns
Note: 2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above.
Example: MMBT2222A-7-F.
K1P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K1P
YM
Marking Information
Device Packaging Shipping
MMBT2222A-7 SOT-23 3000/Tape & Reel
Ordering Information (Note 3)
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
DS30041 Rev. 7 - 2 3 of 4 MMBT2222A
www.diodes.com
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
1
10
1000
100
0.1 110 1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V=1.0V
CE
1.0
5.0
20
10
30
0.1 101.0 50
CAPACITANCE (pF)
REVERSE VOLTS (V)
Fi
g
. 3 T
y
pical Capacitance
Cobo
Cibo
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2
.
0
I , BASE CURRENT (mA)
B
Fi
g
.4 T
y
pical Collector Saturation Re
g
ion
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I= 1mA
CI= 10mA
C
I= 30mA
C
I = 100mA
C
I= 300mA
C
1
0.1 10 100
V , BASE EMITTER VOLTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 6 Base Emitter Volta
g
e vs. Collector Current
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1
.
0
0.9 V= 5V
CE
T= 25°C
A
T= -50°C
A
T = 150°C
A
110 100 1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0
.5
IC
IB
= 10
DS30041 Rev. 7 - 2 4 of 4 MMBT2222A
www.diodes.com
1
10
100
1000
1 10 100
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 7 Gain Bandwidth Product vs. Collector Current
f , GAIN BANDWIDTH PRODUCT (MHz)
T
V= 5V
CE
