IGBT Module IC25 = 24.5 A
VCES = 600 V
VCE(sat)typ. = 2.4 V
Features
•Package with DCB ceramic base plate
•Isolation voltage 3000 V∼
•Planar glass passivated chips
•Low forward voltage drop
•Leads suitable for PC board
soldering
•UL registered, E 148688
Applications
•AC and DC motor control
•AC servo and robot drives
•power supplies
•welding inverters
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling capability
•High power density
•Small and light weight
•Leads with expansion bend for
stress relief
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 2
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
PSIG 25/06
PSI 25/06*
PSIS 25/06*
PSSI 25/06*
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 600 V
VGES ± 20 V
IC25 TC = 25°C 24.5 A
IC80 TC = 80°C 17 A
ICM VGE = ±15 V; RG = 68 Ω; TVJ = 125°C 30 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = VCES; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 82 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 25 A; VGE = 15 V; TVJ = 25°C 2.4 2.9 V
TVJ = 125°C 2.9 V
VGE(th) IC = 0.4 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 2.7 mA
IGES VCE = 0 V; VGE = ± 20 V 100 nA
td(on) 30 ns
tr45 ns
td(off) 270 ns
tf40 ns
Eon 0.7 mJ
Eoff 0.5 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 8nF
RthJC (per IGBT) 1.52 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 3K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 15 A
VGE = 15/0 V; RG = 68 Ω
PSSI
PSIS
PSIS 25/06*
PSIG 25/06 PSI 25/06* PSSI 25/06*
PSIG
*NTC optional
Short Circuit SOA Capability
Square RBSOA
IK 10
RS 18
AC 1
L 9
F 1
X 15
X 16
NTC
T 1 6
L 9
X 1 6
N T C
X 1 5
IK 1 0
R S 1 8
A C 1
K 1 0
X 1 6
X 1 3
X 1 5
N T C
E 2
L 9
P 9
G 1 0
X 1 8
PSI
A1 JK 10
S18
LN 9
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PSIG PSI PSIS PSSI 25/06
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Reverse diodes (FRED)
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 18.5 A
IF80 TC = 80°C 12.0 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 15 A; TVJ = 25°C 2.58 2.64 V
TVJ = 125°C 1.8 V
IRM IF = 10 A; diF/dt = 400 A/µs; TVJ = 125°C 7 A
trr VR = 300 V; VGE = 0 V 70 ns
RthJC 3.5 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 7K/W
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R25 T = 25°C 4.75 5.0 5.25 kΩ
B25/50 3375 K
Module
Symbol Conditions Maximum Ratings
TVJ -40...+150 °C
Tstg -40...+150 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~
MdMounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
aMax. allowable acceleration 50 m/s2
Symbol Conditions Characteristic Values
min. typ. max.
dSCreepage distance on surface (Pin to heatsink) 11.2 mm
dAStrike distance in air (Pin to heatsink) 11.2 mm
Weight 24 g
PSIS
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSI
PSIG
PSSI
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PSIG PSI PSIS PSSI 25/06
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
0 200 400 600 800 1000
0
10
20
30
40
0
30
60
90
12
0
012345
0
10
20
30
40
50
0 20406080
0
5
10
15
20
012345
0
10
20
30
40
50
TJ = 125°C
VCE
V
A
IC
VCE
A
IC
V
nC
QG-di/dt
V
VGE IRM
ns
A/µs
IRM
trr
9V
11V
VGE= 17V
15V
13V
A
9V
11V
VGE= 17V
15V
13V
0123
0
10
20
30
40
50
V
VF
IF
TJ = 25°C
TJ = 125°C
A
14T60
TJ = 25°C
14T60
14T60
14T60 14T60
4 6 8 10 12 14 16
0
10
20
30
40
50
VCE = 20V
V
VGE
A
IC
TJ = 25°C
TJ = 125°C
14T60
TJ = 125°C
VR = 300V
IF = 15A
VCE = 300V
IC = 15A
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
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PSIG PSI PSIS PSSI 25/06
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
0 102030
0
1
2
3
0
20
40
60
0 102030
0,0
0,5
1,0
1,5
2,0
0
100
200
300
400
0,00001 0,0001 0,001 0,01 0,1 1 10
0,0001
0,001
0,01
0,1
1
10
0 20406080100120
0,0
0,2
0,4
0,6
0,8
0
100
200
300
400
020406080100120
0,0
0,5
1,0
1,5
2,0
0
15
30
45
60
single pulse
VCE = 300V
VGE = ±15V
RG = 68Ω
TVJ = 125°C
VCE = 300V
VGE = ±15V
IC = 15A
TVJ = 125°C
0 100 200 300 400 500 600 700
0
10
20
30
40
RG = 68 Ω
TVJ = 125°C
VCE = 300V
VGE = ±15V
RG = 68Ω
TVJ = 125°C
Eon
VCE = 300V
VGE = ±15V
IC = 15A
TVJ = 125°C
td(on)
tr
Eoff
td(off)
tf
Eon
td(on)
tr
Eoff
td(off)
tf
IC
A
IC
A
Eoff
tt
RG
Ω
RG
Ω
V
s
mJ mJ
Eoff
ns
t
ns
t
K/W
ZthJC
IGBT
V
A
mJ ns ns
mJ
14T60
14T60
14T60
14T60
14T60
diode
VDI...25-06P1
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA
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