FGL40N120AN - Fairchild - Product.Network

FGL40N120AN Rev. A1

FGL40N120AN 1200V NPT IGBT

July 2007

IGBT®

FGL40N120AN

1200V NPT IGBT

Features

• High speed switching

• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A

• High input impedance

Applications

Induction Heating, UPS, AC & DC motor controls and general

purpose inverters.

Description

Employing NPT technology, Fairchild’s AN series of IGBTs pro-

vides low conduction and switching losses. The AN series offers

an solution for application such as induction heating (IH), motor

control, general purpose inverters and uninterruptible power

supplies (UPS).

Absolute Maximum Ratings

Notes:

(1) Pulse width limit ed by max. junction temperatu re

Thermal Characteristics

GC E TO-264

Symbol Parameter FGL40N120AN Units

VCES Collector-Emitter Voltage 1200 V

VGES Gate-Emitter Voltage ±25 V

ICCollector Current @TC = 25°C64 A

Collector Current @TC = 100°C40 A

ICM(1) Pulsed Collector Current 160 A

PDMaximum Power Dissipation @TC = 25°C 500 W

Maximum Power Dissipation @TC = 100°C 200 W

SCWT Short Circuit Withstand Time,

VCE = 600V, VGE = 15V, TC = 125°C10 µs

TJOperating Junction Temperature -55 to +150 °C

TSTG Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 seconds 300 °C

Symbol Parameter Typ. Max. Units

RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.25 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W

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FGL40N120AN Rev. A1

FGL40N120AN 1200V NPT IGBT

Package Marking and Ordering Information

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Device Marking Device Package Reel Size Tape Width Quantity

FGL40N120AN FGL40N120AN TO-264 - - 25

Symbol Parameter Conditions Min. Typ. Max. Units

Off Characteristics

BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V

BVCES/

∆TJ

Temperature Coefficient of Breakdown

Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C

ICES Collector Cut-O ff Current VCE = VCES, VGE = 0V -- -- 1 mA

IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±250 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 3.5 5.5 7.5 V

VCE(sat) Collector to Emitter

Saturation Voltage

IC = 40A, VGE = 15V -- 2.6 3.2 V

IC = 40A, VGE = 15V,

TC = 125°C-- 2.9 -- V

IC = 64A, VGE = 15V -- 3.15 -- V

Dynamic Characteristics

Cies Input Capacitance VCE = 30V, VGE = 0V

f = 1MHz

-- 3200 -- pF

Coes Output Capacitance -- 370 -- pF

cres Reverse Transfer Capacitance -- 125 -- pF

Switching Characteristics

td(on) Turn-On Delay Time

VCC = 600V, IC = 40A,

RG = 5Ω, V GE = 15V,

Inductive Load, TC = 25°C

-- 15 -- ns

trRise Time -- 20 -- ns

td(off) Turn-Off Delay Time -- 110 -- ns

tfFall Time -- 40 80 ns

Eon Turn-On Switching Loss -- 2.3 3.45 mJ

Eoff Turn-Off Switching Loss -- 1.1 1.65 mJ

Ets Total Switching Loss -- 3.4 5.1 mJ

td(on) Turn-On Delay Time

VCC = 600V, IC = 40A,

RG = 5Ω, V GE = 15V,

Inductive Load, TC = 125°C

-- 20 -- ns

trRise Time -- 25 -- ns

td(off) Turn-Off Delay Time -- 120 -- ns

tfFall Time -- 45 -- ns

Eon Turn-On Switching Loss -- 2.5 -- mJ

Eoff Turn-Off Switching Loss -- 1.8 -- mJ

Ets Total Switching Loss -- 4.3 -- mJ

QgTotal Gate charge VCE = 600V, IC = 40A,

VGE = 15V

-- 220 330 nC

Qge Gate-Emitter Charge -- 25 38 nC

Qgc Gate-Collector Charge -- 130 195 nC

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FGL40N120AN Rev. A1

FGL40N120AN 1200V NPT IGBT

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage

Characteristics

Figure 3. Saturation Voltage vs. Case Figure 4. Load Current vs. Frequency

Temperature at Variant Current Level

Figure 5. Saturatio n Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

0246810

100

150

200

250

300 20V17V15V

12V

VGE = 10V

TC = 25°C

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V] 0246

120

160 Common Emitter

VGE = 15V

TC = 25oC

TC = 125oC

Collector Current, IC [A]

Collector-Em itter Vol tag e, VCE [V]

25 50 75 100 125

80A

Common Em i tte r

VGE = 15V

40A

IC = 20A

Collector-Emitter Voltage, VCE [V]

Case Temperature, T C [°C]

0.1 1 10 100 1000

80 VCC = 600V

Load Current : peak of square wave

Duty cycle : 50%

TC = 100°C

Power Dissipation = 100W

Load Current [A]

Frequ e ncy [ k Hz]

048121620

80A

40A

Common Emitter

TC = 125°C

IC = 20A

Collector-Emit te r Volt age, VCE [V]

Gate-Emitter Voltag e, VGE [V]

048121620

80A

40A

Common Emitter

TC = 25°C

IC = 20A

Collector-Emit te r Volt age, VCE [V]

Gate-Emitter Voltag e, VGE [V]

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FGL40N120AN Rev. A1

FGL40N120AN 1200V NPT IGBT

Typical Performance Characteristics (Continued)

Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate

Resistance

Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance

Gate Resistance

Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.

Collector Current Collector Current

0 10203040506070

100

Common Emitter

VCC = 600V, VGE = ±15V

IC = 40A

TC = 25°C

TC = 125°C

td(on)

Switching Time [ns]

Gate Resistance, RG [Ω]

110

1000

2000

3000

4000

5000

6000

Ciss

Coss

Common Emitter

VGE = 0V, f = 1MHz

TC = 25°C

Crss

Capacitance [pF]

Collector-Emitter Voltage, VCE [V]

0 10203040506070

100

1000

Common Emitter

VCC = 600V, VGE = ±15V, IC = 40A

TC = 25°C

TC = 125°C td(off)

Switching Time [ns]

Gate Res ist an ce , RG [Ω]

0 10203040506070

Common Emitter

VCC = 600V, VGE = ±15V

IC = 40A

TC = 25°C

TC = 125°C

Eon

Eoff

Switching Loss [mJ]

Gate Resistan ce, RG [Ω]

20 30 40 50 60 70 80

100

Common Emitter

VGE = ±15V, RG = 5Ω

TC = 25°C

TC = 125°C tr

td(on)

Switching Time [ns]

Collector Current, I C [A]

20 30 40 50 60 70 80

100

Common Emitter

VGE = ±15V, RG = 5Ω

TC = 25°C

TC = 125°C td(off)

Switching Time [ns]

Collector Current, I C [A]

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FGL40N120AN Rev. A1

FGL40N120AN 1200V NPT IGBT

Typical Performance Characteristics (Continued)

Figure 13. Switching Loss vs . Collector Current Figure 14. Gate Charge Char acteristics

Figure 15. SOA Characteristics Figure 16. Turn-Off SOA

Figure 17. Transient Thermal Impedance of IGBT

20 30 40 50 60 70 80

0.1

Common Emitter

VGE = ±15V, RG = 5Ω

TC = 25°C

TC = 125°C Eon

Eoff

Switching Loss [mJ]

Collec tor Cu rre n t, I C [A]

0 50 100 150 200 250

600V

400V

Common Emitter

RL = 15Ω

TC = 25°CVcc = 200V

Gate-Emitter Voltage, VGE [V]

Gate Charge, Qg [n C]

1 10 100 1000

100

Safe Operating Area

VGE = 15V, TC = 125oC

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V]

0.1 1 10 100 1000

0.01

0.1

100 50µs

100µs

1ms

DC Operation

Ic MAX (Pul sed)

Ic MAX (Continuous)

Single Nonrepetitive

Pulse Tc = 25oC

Curves must be derated

linearly with increase

in temperature

Collector Current, Ic [A]

Collector - Emitter Voltage, VCE [V]

1E-5 1E-4 1E-3 0.01 0.1 1 10

1E-3

0.01

0.1

0.5

0.2

0.05

0.02

0.01 single pulse

Thermal Response [Zthjc]

Rectang ular Pu lse Du ra tion [sec]

Pdm

Duty factor D = t1 / t2

Peak Tj = Pdm

Zthjc + T

Pdm

Duty factor D = t1 / t2

Peak Tj = Pdm

Zthjc + T

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FGL40N120AN Rev. A1

FGL40N120AN 1200V NPT IGBT

Mechanical Dimensions

5.45TYP

[5.45 ±0.30]5.45TYP

[5.45 ±0.30]

4.90 ±0.20

20.00 ±0.20

(8.30) (8.30) (1.00)

(0.50)

(2.00)

(7.00)

(R1.00)

(R2.00)

ø3.30 ±0.20

(7.00)

(1.50)

(1.50) (1.50)

2.50 ±0.20 3.00 ±0.20

2.80 ±0.30

1.00 +0.25

–0.10

0.60 +0.25

–0.10

1.50 ±0.20

6.00 ±0.20

20.00 ±0.20

20.00 ±0.50

5.00 ±0.20

3.50 ±0.20

2.50 ±0.10

(9.00)

(2.00)

(1.50)

(0.15)

(2.80) (4.00)

(11.00)

TO-264

Dimensions in Millimeters

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

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reference information only.

Rev. I29

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