HMC392A v02.0618 AMPLIFIER - LOW NOISE - CHIP GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Typical Applications Features The HMC392A is ideal for: Gain: 17.2 dB * Point-to-Point Radios Noise Figure: 1.7 dB * VSAT Single Supply Voltage: +5V * LO Driver for HMC Mixers 50 Ohm Matched Input/Output * Military EW, ECM, C I No External Components Required * Space Small Size: 1.3 x 1.0 x 0.1 mm Functional Diagram General Description 3 The HMC392A is a GaAs MMIC Low Noise Amplifier die which operates between 3.5 and 7.0 GHz. The amplifier provides 17.2 dB of gain, 1.7 dB noise figure, and 32.5 dBm IP3 from a +5V supply voltage. The HMC392A has six bonding adjustment options which allow the user to select the bias point and output power of the device (+10 to +19.7 dBm). The HMC392A amplifier can easily be integrated into Multi-ChipModules (MCMs) due to its small (1.3 mm2) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25 C, Vdd = 5V Parameter Min. Frequency Range Gain Typ. Max. Min. 4.0 - 6.0 14.5 Gain Variation Over Temperature Noise Figure 17.4 14.5 0.005 1.7 Typ. Max. 3.5 - 7.0 3.0 Units GHz 17.2 dB 0.005 dB/ C 1.7 3.4 dB Input Return Loss 12 12 dB Output Return Loss 20 18 dB Output Power for 1 dB Compression (P1dB) 19.5 19 dBm Saturated Output Power (Psat) 20.5 20 dBm Output Third Order Intercept (IP3) 32.5 Supply Current (Idd) 59 32.5 75 59 dBm 75 mA Note: Data taken with pad PS2 bonded to ground (state 2) unless otherwise noted. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC392A v02.0618 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Gain vs. Temperature 20 19 15 18.5 18 5 17.5 GAIN (dB) RESPONSE (dB) 10 0 -5 17 16.5 -10 16 -15 15.5 -20 -25 15 2 3 4 5 6 7 8 9 3 3.5 4 4.5 FREQUENCY (GHz) S21 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) S11 S22 +25C Input Return Loss vs. Temperature +85C -55C Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) AMPLIFIER - LOW NOISE - CHIP Broadband Gain & Return Loss -10 -15 -10 -15 -20 -25 -20 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 3 3.5 4 4.5 FREQUENCY (GHz) +25C 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) +85C +25C -55C Noise Figure vs. Temperature +85C -55C Reverse Isolation vs. Temperature 5 0 4.5 -5 3.5 ISOLATION (dB) NOISE FIGURE (dB) 4 3 2.5 2 1.5 1 -10 -15 -20 -25 0.5 0 -30 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 FREQUENCY (GHz) +25C 2 +85C 8 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) -55C +25C +85C -55C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC392A v02.0618 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz 22 20 20 18 18 Psat (dBm) P1dB (dBm) Psat vs. Temperature 22 16 16 14 14 12 12 10 10 3 4 5 6 7 8 3 4 5 FREQUENCY (GHz) +25C +85C +25C -55C 7 8 +85C -55C Gain, Noise Figure & Power vs. Supply Voltage @ 5.5 GHz Output IP3 vs. Temperature 40 21 2 36 20 1.8 19 1.6 18 1.4 17 1.2 GAIN(dB), P1dB(dBm) IP3 (dBm) 6 FREQUENCY (GHz) 32 28 24 1 16 20 3 4 5 6 7 8 4.5 4.75 5 FREQUENCY (GHz) 5.25 SUPPLY VOLTAGE (V) GAIN +25C 5.5 +85C P1dB -55C NOISE FIGURE Gain & Noise Figure vs. Power Select State P1dB vs. Power Select State 18 21 16 GAIN, NOISE FIGURE (dB) P1dB (dBm) 19 17 15 13 11 14 12 10 8 6 4 2 9 0 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) State 1 Idd=59mA State 2 Idd=54mA State 3 Idd=48mA 3 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) State 4 Idd=41mA State 5 Idd=34mA State 6 Idd=24mA Gain State 1 Gain State 2 Gain State 3 Gain State 4 Gain State 5 Gain State 6 NF State 1 NF State 2 NF State 3 NF State 4 NF State 5 NF State 6 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D NOISE FIGURE (dB) AMPLIFIER - LOW NOISE - CHIP P1dB vs. Temperature HMC392A v02.0618 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz AMPLIFIER - LOW NOISE - CHIP Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +7 Vdc RF Input Power (RFIN)(Vdd = +5 Vdc) +20 dBm Channel Temperature 175 C Continuous Pdiss (T= 85 C) (derate 9.3 mW/C above 85 C) 0.83 W Thermal Resistance (channel to die bottom) 108 C/W Storage Temperature -65 to +150 C Operating Temperature -55 to +85 C ESD Class 1A Idd (mA) +4.5 57 +5.0 59 +5.5 62 (State 2 Depicted) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate WP-16 (Waffle Pack) [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 4 Vdd (Vdc) NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE 0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC392A v02.0618 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz AMPLIFIER - LOW NOISE - CHIP Pad Descriptions Pad Number Function Description Interface Schematic 3 RFIN This pad is AC coupled and matched to 50 Ohms 5 6 7 8 9 10 Power Select PS1 PS2 PS3 PS4 PS5 PS6 One of these pads must be connected to ground. See Power Select Table for selection criteria. 1, 2 Vdd, Vdd (alt.) Power supply voltage. Connect either pad 1 or pad 2 to +5V supply. No choke inductor or bypass capacitor is needed. 4 RFOUT This pad is AC coupled and matched to 50 Ohms Die Bottom GND Die bottom must be connected to RF/DC ground. Power Select Table 5 State Pads Bonded to Ground Typical Idd (mA) 1 PS1 69 Typical P1dB (dBm) 19.7 2 PS2 59 19.4 18.8 3 PS3 49 4 PS4 38 17.5 5 PS5 27 14.8 6 PS6 17 10.3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC392A v02.0618 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz AMPLIFIER - LOW NOISE - CHIP Assembly Diagram Note: State 2 shown. PS2 bonded to ground. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 6 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D