Agilent ATF-551M4 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Description
Agilent Technologies’ ATF-551M4
is a high dynamic range, super
low noise, single supply
E-pHEMT GAAs FET housed in a
thin miniature leadless package.
The combination of small device
size, super low noise (under 1 dB
Fmin from 2 to 6 GHz), high
linearity and low power makes
the ATF-551M4 ideal for LNA or
hybrid module designs in wire-
less receiver in the 450 MHz to
10 GHz frequency band.
Applications include Cellular/
PCS/ WCDMA handsets and data
modem cards, fixed wireless
infrastructure in the 2.4, 3.5 GHz
and UNII frequency bands, as
well as 2.4 GHz 802.11b, 5 GHz
802.11a and HIPERLAN/2
Wireless LAN PC-cards.
Note:
1. Agilent’s enhancement mode E-pHEMT
devices are the first commercially available
single-supply GaAs transistors that do not
need a negative gate bias voltage for
operation. They can help simplify the design
and reduce the cost of receivers and
transmitters in many applications in the
450 MHz to 10 GHz frequency range.
Features
• Very low noise figure and high
linearity
• Single Supply Enhancement Mode
Technology[1] optimized for 3V
operation
• Excellent uniformity in product
specifications
• 400 micron gate width
• Thin miniature package
1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-reel packaging option
available
Specifications
• 2 GHz; 2.7V, 10 mA (typ.)
• 24.1 dBm output 3rd order intercept
• 14.6 dBm output power at 1 dB gain
compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Applications
• Low Noise Amplifier for:
– Cellular/PCS/WCDMA hand-
sets and modem cards
– 2.4 GHz, 3.5 GHz and UNII fixed
wireless infrastructure
– 2.4 GHz 802.11b Wireless LAN
– 5 GHz 802.11a and HIPERLAN
Wireless LAN
•
General purpose discrete E-pHEMT
for other ultra low noise applications
MiniPak 1.4 mm x 1.2 mm Package
Pin Connections and
Package Marking
Note:
Top View. Package marking provides orientation,
product identification and date code.
“V” = Device Type Code
“x” = Date code character. A different
character is assigned for each month and
year.
Source
Pin 3
Gate
Pin 2
Source
Pin 1
Drain
Pin 4
Vx
Vx
2
ATF-551M4 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
VDS Drain-Source Voltage[2] V5
VGS Gate-Source Voltage[2] V -5 to +0.8
VGD Gate Drain Voltage[2] V5
IDS Drain Current [2] mA 100
IGS Gate Current[5] mA 1
Pdiss Total Power Dissipation [3] mW 270
Pin max. RF Input Power dBm 3
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
θjc Thermal Resistance[4] °C/W 240
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
6 mW/°C for TL > 40°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. Device can safely handle +3 dBm RF Input
Power provided I
GS
is limited to 1 mA. I
GS
at
P
1dB
drive RF level is bias circuit dependent.
See applications section for additional
information.
Product Consistency Distribution Charts [6]
V
DS
(V)
Figure 1. Typical I-V Curves.
(V
GS
= 0.1 V per step)
I
DS
(mA)
0.4V
0.5V
0.6V
0.7V
0.3V
02146537
70
60
50
40
30
20
10
0
GAIN (dBm)
Figure 2. Capability Plot for Gain @ 2.7 V,
10 mA. LSL = 15.5, Nominal = 17.5,
USL = 18.5
15 1716 18 19
180
150
120
90
60
30
0
Cpk = 1.64
Stdev = 0.19
-3 Std +3 Std
OIP3
Figure 3. Capability Plot for OIP3 @ 2.7 V,
10 mA. LSL = 22.0, Nominal = 24.1
22 2423 25 26
150
120
90
60
30
0
Cpk = 2.85
Stdev = 0.25
-3 Std
NF
Figure 4. Capability Plot for NF @ 2.7 V,
10 mA. Nominal = 0.5, USL = 0.9
0.29 0.690.49 0.89 1.09
160
120
80
40
0
Cpk = 2.46
Stdev = 0.06
+3 Std
Note:
6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match
and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements.
3
ATF-551M4 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameter and Test Condition Units Min. Typ. Max.
Vgs Operational Gate Voltage Vds = 2.7V, Ids = 10 mA V 0.3 0.47 0.65
Vth Threshold Voltage Vds = 2.7V, Ids = 2 mA V 0.18 0.37 0.53
Idss Saturated Drain Current Vds = 2.7V, Vgs = 0V µA — 0.1 3
Gm Transconductance Vds = 2.7V, gm = ∆Idss/∆Vgs; mmho 110 220 285
∆Vgs = 0.75 – 0.7 = 0.05V
Igss Gate Leakage Current Vgd = Vgs = -2.7V µA——95
NF Noise Figure [1] f = 2 GHz Vds = 2.7V, Ids = 10 mA dB — 0.5 0.9
Vds = 3V, Ids = 20 mA dB — 0.5 —
Gain Gain [1] f = 2 GHz Vds = 2.7V, Ids = 10 mA dB 15.5 17.5 18.5
Vds = 3V, Ids = 20 mA dB — 18.0 —
OIP3 Output 3rd Order f = 2 GHz Vds = 2.7V, Ids = 10 mA dBm 22 24.1 —
Intercept Point[1] Vds = 3V, Ids = 20 mA dBm — 30.0 —
P1dB 1dB Compressed f = 2 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.6 —
Output Power[1] Vds = 3V, Ids = 20 mA dBm — 16.0 —
Notes:
1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts from
4 wafers.
Input 50Ω Input
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.3
Γ_ang = 11°
(0.3 dB loss)
Output
Matching Circuit
Γ_mag = 0.3
Γ_ang = 9°
(0.9 dB loss)
DUT
50Ω Output
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a
trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-
embedded from actual measurements.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Fmin Minimum Noise Figure [2] f = 900 GHz Vds = 2.7V, Ids = 10 mA dB — 0.27 —
f = 2 GHz Vds = 2.7V, Ids = 10 mA dB — 0.41 —
f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dB — 0.61 —
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dB — 0.88 —
Ga Associated Gain [2] f = 900 GHz Vds = 2.7V, Ids = 10 mA dB — 21.8 —
f = 2 GHz Vds = 2.7V, Ids = 10 mA dB — 17.9 —
f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dB — 14.2 —
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dB — 12.0 —
OIP3 Output 3rd Order f = 900 GHz Vds = 2.7V, Ids = 10 mA dBm — 22.1 —
Intercept Point[3] f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dBm — 24.3 —
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dBm — 24.5 —
P1dB 1dB Compressed f = 900 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.3 —
Output Power[3] f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.5 —
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.3 —
Notes:
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
ATF-551M4 Electrical Specifications (see notes 2 and 3, as indicated)
4
ATF-551M4 Typical Performance Curves
Notes:
1. Measurements at 900MHz were made using
an ICM fixture with a double stub tuner at the
input tuned for low noise and a double stub
tuner at the output tuned for maximum OIP3.
Circuit losses have been de-embedded from
actual measurements.
2. The Fmin values are based on a set of 16
noise figure measurements made at 16
different impedances using an ATN NP5 test
system. From these measurements Fmin is
calculated. Refer to the noise parameter
measurement section for more information.
Figure 6. Gain vs. Ids and Vds at 900 MHz[1].
Id (mA)
GAIN (dB)
03515530252010
26
25
24
23
22
21
20
19
18
2V
2.7V
3V
Figure 7. Fmin vs. Ids and Vds at 900 MHz[2].
Id (mA)
Fmin (dB)
03515530252010
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
2V
2.7V
3V
Figure 9. IIP3 vs. Ids and Vds at 900 MHz[1].
Id (mA)
IIP3 (dBm)
03515530252010
7
6
5
4
3
2
1
0
-1
-2
2V
2.7V
3V
Figure 10. P1dB vs. Ids and Vds at 900 MHz[1].
Id (mA)
P1dB (dBm)
03515530252010
18
17
16
15
14
13
12
11
10
9
2V
2.7V
3V
Figure 8. OIP3 vs. Ids and Vds at 900 MHz[1].
Id (mA)
OIP3 (dBm)
03515530252010
32
30
28
26
24
22
20
18
16
2V
2.7V
3V
5
ATF-551M4 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz with biasing 2.7V,
10 mA were made on a fixed tuned
production test board that was tuned for
optimal OIP3 match with reasonable noise
figure. This circuit represents a trade-off
between optimal noise match, maximum OIP3
match and a realizable match based on
production test board requirements.
Measurements taken other than 2.7V, 10 mA
biasing was made using a double stub tuner
at the input tuned for low noise and a double
stub tuner at the output tuned for maximum
OIP3. Circuit losses have been de-embedded
from actual measurements.
2. The Fmin values are based on a set of
16 noise figure measurements made at
16 different impedances using an ATN NP5
test system. From these measurements Fmin
is calculated. Refer to the noise parameter
measurement section for more information.
Figure 11. Gain vs. Ids and Vds at 2 GHz[1].
Id (mA)
GAIN (dB)
03515530252010
20
19
18
17
16
15
2V
2.7V
3V
Figure 12. Fmin vs. Ids and Vds at 2 GHz[2].
Id (mA)
Fmin (dB)
03515530252010
0.6
0.5
0.4
0.3
0.2
0.1
0
2V
2.7V
3V
Figure 13. OIP3 vs. Ids and Vds at 2 GHz[1].
Id (mA)
OIP3 (dBm)
03515530252010
36
32
28
24
20
16
2V
2.7V
3V
Figure 14. IIP3 vs. Ids and Vds at 2 GHz[1].
Id (mA)
IIP3 (dBm)
03515530252010
18
16
14
12
10
8
6
4
2
0
2V
2.7V
3V
Figure 15. P1dB vs. Ids and Vds at 2 GHz[1].
Id (mA)
P1dB (dB)
03515530252010
2V
2.7V
3V
17
16
15
14
13
12
11
10
6
ATF-551M4 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz were made on a
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
requirements. Measurements taken above
and below 2 GHz was made using a double
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
2. The Fmin values are based on a set of
16 noise figure measurements made at
16 different impedances using an ATN NP5
test system. From these measurements Fmin
is calculated. Refer to the noise parameter
measurement section for more information.
Figure 16. Gain vs. Bias over Frequency[1].
FREQUENCY (GHz)
GAIN (dB)
0631542
30
25
20
15
10
5
2V 10 mA
2.7V 10 mA
Figure 17. Fmin vs. Bias over Frequency[2].
FREQUENCY (GHz)
Fmin (dB)
0631542
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2V 10 mA
2.7V 10 mA
Figure 18. OIP3 vs. Bias over Frequency[1].
FREQUENCY (GHz)
OIP3 (dBm)
0631542
26
25
24
23
22
21
20
19
18
2V 10 mA
2.7V 10 mA
Figure 19. IIP3 vs. Bias over Frequency[1].
FREQUENCY (GHz)
IIP3 (dBm)
0631542
16
14
12
10
8
6
4
2
0
-2
-4
-6
2V 10 mA
2.7V 10 mA
Figure 20. P1dB vs. Bias over Frequency[1].
FREQUENCY (GHz)
P1dB (dBm)
0631542
16
15
14
13
12
11
10
2V 10 mA
2.7V 10 mA
7
ATF-551M4 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz were made on a
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
requirements. Measurements taken above
and below 2 GHz was made using a double
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
2. The Fmin values are based on a set of
16 noise figure measurements made at
16 different impedances using an ATN NP5
test system. From these measurements Fmin
is calculated. Refer to the noise parameter
measurement section for more information.
Figure 21. Gain vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
FREQUENCY (GHz)
GAIN (dB)
0631542
30
25
20
15
10
5
-40°C
25°C
85°C
Figure 22. Fmin vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[2].
FREQUENCY (GHz)
Fmin (dB)
0631542
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-40°C
25°C
85°C
Figure 23. OIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
FREQUENCY (GHz)
OIP3 (dBm)
0631542
-40°C
25°C
85°C
25
24
23
22
21
20
19
Figure 24. IIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
FREQUENCY (GHz)
IIP3 (dBm)
0631542
-40°C
25°C
85°C
20
15
10
5
0
-5
-10
Figure 25. P1dB vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
FREQUENCY (GHz)
P1dB (dBm)
0631542
-40°C
25°C
85°C
16
15
14
13
12
11
10
8
ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 10 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.995 -6.0 20.41 10.479 175.9 0.007 86.3 0.803 -3.3 31.75
0.5 0.954 -29.1 19.95 9.946 158.2 0.031 71.6 0.758 -15.6 25.06
0.9 0.906 -50.7 19.35 9.280 144.2 0.052 60.8 0.710 -27.4 22.52
1.0 0.896 -55.7 19.18 9.103 141.0 0.056 58.3 0.692 -30.2 22.11
1.5 0.833 -79.5 18.15 8.080 125.6 0.075 46.8 0.611 -42.3 20.32
1.9 0.790 -96.5 17.22 7.260 114.9 0.085 39.0 0.547 -50.4 19.32
2.0 0.781 -100.4 17.00 7.078 112.5 0.087 37.3 0.532 -52.3 19.10
2.5 0.739 -118.5 15.84 6.197 101.1 0.095 29.8 0.463 -60.6 18.14
3.0 0.710 -134.4 14.74 5.459 91.2 0.099 23.7 0.404 -67.6 17.41
4.0 0.683 -160.0 12.75 4.341 74.5 0.104 14.8 0.318 -79.6 16.21
5.0 0.679 -179.8 11.03 3.559 60.3 0.105 8.6 0.263 -91.2 15.30
6.0 0.680 166.5 9.65 3.036 48.5 0.107 5.0 0.220 -99.5 14.53
7.0 0.681 154.0 8.43 2.638 37.2 0.107 2.1 0.199 -111.0 13.92
8.0 0.683 143.7 7.43 2.353 26.4 0.110 -0.3 0.185 -123.4 13.30
9.0 0.690 132.7 6.53 2.122 15.7 0.113 -2.6 0.181 -137.7 11.27
10.0 0.687 119.7 5.72 1.932 4.5 0.117 -5.4 0.185 -151.1 9.97
11.0 0.691 106.5 4.98 1.775 -6.4 0.122 -8.4 0.196 -163.5 9.14
12.0 0.696 92.6 4.28 1.636 -17.7 0.129 -12.3 0.209 -174.4 8.44
13.0 0.713 81.8 3.53 1.501 -28.6 0.135 -16.2 0.206 171.4 7.80
14.0 0.747 67.4 2.82 1.384 -40.4 0.143 -21.8 0.211 151.2 7.62
15.0 0.759 55.5 1.97 1.255 -51.8 0.149 -27.4 0.237 131.8 6.73
16.0 0.808 45.4 1.00 1.122 -62.4 0.153 -33.3 0.269 113.3 6.90
17.0 0.828 37.3 -0.01 0.999 -72.7 0.157 -39.2 0.322 95.4 6.20
18.0 0.870 30.9 -1.04 0.887 -82.6 0.159 -45.2 0.383 80.1 7.47
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.24 0.62 -4.3 0.14 23.50
0.9 0.24 0.56 8.8 0.13 21.66
1.0 0.28 0.52 13.5 0.12 21.61
1.9 0.45 0.47 38.6 0.11 18.04
2.0 0.39 0.47 42.9 0.11 17.88
2.4 0.47 0.42 52.8 0.11 16.76
3.0 0.55 0.35 74.0 0.09 15.66
3.9 0.61 0.32 105.4 0.08 14.10
5.0 0.74 0.33 144.0 0.06 12.74
5.8 0.89 0.36 164.3 0.05 11.83
6.0 0.90 0.37 166.1 0.05 11.63
7.0 1.03 0.38 -170.9 0.06 10.71
8.0 1.13 0.44 -157.2 0.07 9.99
9.0 1.27 0.48 -142.4 0.09 9.36
10.0 1.53 0.46 -126.0 0.17 8.46
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, VDS = 2V, IDS = 10 mA
40
30
20
10
0
-10
Figure 26. MSG/MAG and |S21|2 vs.
Frequency at 2V, 10 mA.
FREQUENCY (GHz)
020
10515
MSG/MAG and |S
21
|
2
(dB)
|S21|2
MAG MSG
MSG
9
ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 15 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.995 -6.6 21.93 12.489 175.5 0.006 86.2 0.765 -3.7 33.18
0.5 0.947 -31.6 21.41 11.757 156.7 0.029 70.9 0.715 -17.0 26.08
0.9 0.892 -54.7 20.67 10.804 142.0 0.048 59.7 0.659 -29.6 23.52
1.0 0.880 -60.1 20.46 10.547 138.6 0.052 57.1 0.641 -32.5 23.07
1.5 0.812 -84.9 19.26 9.186 123.0 0.067 46.0 0.555 -45.0 21.37
1.9 0.768 -102.1 18.23 8.153 112.3 0.076 38.7 0.489 -53.1 20.31
2.0 0.758 -106.1 17.98 7.923 109.9 0.077 37.2 0.474 -55.0 20.12
2.5 0.718 -124.1 16.73 6.859 98.9 0.084 30.5 0.407 -63.2 19.12
3.0 0.692 -139.7 15.55 5.991 89.3 0.088 25.3 0.352 -70.2 18.33
4.0 0.671 -164.5 13.47 4.716 73.3 0.092 18.0 0.272 -82.3 17.10
5.0 0.670 176.6 11.70 3.845 59.7 0.095 13.1 0.222 -94.5 16.07
6.0 0.671 163.5 10.30 3.273 48.3 0.098 10.5 0.181 -103.2 15.24
7.0 0.674 151.5 9.06 2.838 37.4 0.101 8.2 0.164 -115.4 14.49
8.0 0.676 141.6 8.06 2.528 27.0 0.105 6.1 0.152 -128.5 12.66
9.0 0.684 130.9 7.14 2.276 16.5 0.111 3.7 0.150 -143.3 11.51
10.0 0.682 118.0 6.33 2.072 5.6 0.117 0.6 0.156 -156.9 10.35
11.0 0.686 105.1 5.59 1.903 -5.0 0.124 -3.1 0.170 -169.0 9.57
12.0 0.691 91.4 4.88 1.753 -16.1 0.132 -7.6 0.183 -179.3 8.87
13.0 0.708 80.9 4.13 1.609 -26.9 0.140 -12.3 0.181 165.9 8.27
14.0 0.744 66.5 3.42 1.483 -38.5 0.148 -18.6 0.188 145.0 8.14
15.0 0.756 54.9 2.59 1.347 -49.7 0.155 -24.9 0.217 125.0 7.23
16.0 0.805 45.0 1.59 1.201 -60.2 0.158 -31.2 0.253 106.8 7.38
17.0 0.825 37.0 0.61 1.073 -70.4 0.161 -37.5 0.310 89.4 6.61
18.0 0.870 30.7 -0.41 0.954 -80.1 0.163 -43.8 0.373 74.9 7.67
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.21 0.61 -6.1 0.12 24.12
0.9 0.21 0.55 7.0 0.12 22.18
1.0 0.27 0.50 11.4 0.11 22.12
1.9 0.42 0.46 38.1 0.10 18.61
2.0 0.37 0.43 42.7 0.10 18.52
2.4 0.44 0.39 52.9 0.10 17.34
3.0 0.52 0.32 74.4 0.08 16.21
3.9 0.57 0.28 108.3 0.07 14.65
5.0 0.71 0.30 149.5 0.06 13.27
5.8 0.85 0.35 170.0 0.05 12.38
6.0 0.86 0.35 171.7 0.05 12.19
7.0 0.97 0.38 -165.9 0.06 11.24
8.0 1.08 0.43 -152.1 0.07 10.49
9.0 1.22 0.47 -138.1 0.10 9.84
10.0 1.44 0.46 -122.5 0.17 8.96
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, VDS = 2V, IDS = 15 mA
40
30
20
10
0
-10
Figure 27. MSG/MAG and |S21|2 vs.
Frequency at 2V, 15 mA.
FREQUENCY (GHz)
020
10515
MSG/MAG and |S
21
|
2
(dB)
|S
21
|
2
MAG MSG
MSG
10
ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 20 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.994 -6.9 22.85 13.876 175.3 0.006 85.6 0.740 -3.9 33.64
0.5 0.942 -33.3 22.27 12.985 155.7 0.027 70.4 0.687 -17.8 26.82
0.9 0.882 -57.3 21.44 11.806 140.5 0.045 59.0 0.627 -30.9 24.19
1.0 0.869 -62.8 21.21 11.491 137.1 0.048 56.5 0.608 -33.8 23.79
1.5 0.798 -88.1 19.90 9.881 121.3 0.062 45.7 0.520 -46.4 22.02
1.9 0.753 -105.5 18.79 8.704 110.7 0.070 38.9 0.455 -54.4 20.95
2.0 0.744 -109.5 18.53 8.443 108.4 0.071 37.4 0.441 -56.3 20.75
2.5 0.706 -127.4 17.22 7.262 97.5 0.077 31.3 0.376 -64.3 19.75
3.0 0.681 -142.7 16.01 6.314 88.2 0.081 26.7 0.323 -71.0 18.92
4.0 0.663 -167.0 13.88 4.943 72.5 0.085 20.3 0.248 -82.9 17.65
5.0 0.664 174.6 12.09 4.021 59.3 0.089 16.2 0.201 -95.2 16.55
6.0 0.666 161.9 10.68 3.418 48.1 0.093 14.1 0.162 -103.7 15.65
7.0 0.670 150.1 9.43 2.962 37.3 0.097 12.0 0.144 -116.4 14.85
8.0 0.673 140.4 8.42 2.637 27.1 0.103 10.0 0.133 -130.0 12.78
9.0 0.681 129.8 7.51 2.373 16.8 0.109 7.4 0.131 -145.9 11.65
10.0 0.678 117.1 6.68 2.158 6.0 0.117 3.7 0.139 -160.3 10.56
11.0 0.682 104.3 5.94 1.982 -4.6 0.125 -0.2 0.154 -172.7 9.80
12.0 0.688 90.6 5.23 1.826 -15.6 0.133 -5.2 0.168 176.9 9.11
13.0 0.706 80.3 4.48 1.675 -26.3 0.142 -10.3 0.169 161.6 8.56
14.0 0.743 65.9 3.76 1.542 -38.0 0.150 -17.0 0.182 139.6 8.46
15.0 0.753 54.4 2.92 1.400 -48.9 0.157 -23.6 0.212 121.2 7.48
16.0 0.804 44.7 1.93 1.249 -59.3 0.160 -30.1 0.250 103.8 7.76
17.0 0.824 36.7 0.95 1.116 -69.4 0.163 -36.5 0.306 87.0 6.93
18.0 0.869 30.6 -0.05 0.994 -78.9 0.165 -43.0 0.367 73.0 7.80
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.19 0.59 -7.0 0.11 23.50
0.9 0.20 0.54 6.3 0.11 21.66
1.0 0.25 0.48 10.1 0.10 21.61
1.9 0.41 0.43 38.7 0.09 18.04
2.0 0.36 0.41 43.1 0.09 17.88
2.4 0.43 0.37 53.4 0.09 16.76
3.0 0.51 0.29 76.3 0.08 15.66
3.9 0.58 0.26 112.7 0.07 14.10
5.0 0.70 0.29 154.0 0.05 12.74
5.8 0.85 0.34 173.6 0.05 11.83
6.0 0.86 0.35 175.9 0.05 11.63
7.0 0.94 0.37 -162.3 0.06 10.71
8.0 1.07 0.42 -148.2 0.08 9.99
9.0 1.20 0.48 -135.2 0.10 9.36
10.0 1.43 0.46 -119.5 0.17 8.46
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, VDS = 2V, IDS = 20 mA
40
30
20
10
0
-10
Figure 28. MSG/MAG and |S21|2 vs.
Frequency at 2V, 20 mA.
FREQUENCY (GHz)
020
10515
MSG/MAG and |S
21
|
2
(dB)
|S
21
|
2
MAG MSG
MSG
11
ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 10 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.995 -5.9 20.55 10.656 175.9 0.006 86.3 0.825 -3.0 32.49
0.5 0.955 -28.7 20.11 10.129 158.4 0.028 72.0 0.782 -14.0 25.58
0.9 0.907 -50.0 19.52 9.466 144.6 0.046 61.3 0.735 -24.5 23.13
1.0 0.896 -55.0 19.36 9.292 141.4 0.050 58.8 0.717 -27.0 22.69
1.5 0.833 -78.6 18.34 8.265 126.1 0.067 47.6 0.639 -37.6 20.91
1.9 0.789 -95.5 17.43 7.439 115.4 0.076 40.0 0.577 -44.6 19.91
2.0 0.779 -99.4 17.21 7.255 113.0 0.078 38.4 0.562 -46.2 19.69
2.5 0.737 -117.4 16.07 6.361 101.7 0.085 31.0 0.495 -53.1 18.74
3.0 0.707 -133.4 14.98 5.610 91.8 0.089 25.1 0.439 -58.8 18.00
4.0 0.679 -159.1 13.01 4.471 75.0 0.093 16.6 0.357 -68.3 16.82
5.0 0.674 -178.9 11.30 3.673 60.8 0.094 10.9 0.303 -77.6 15.92
6.0 0.675 167.3 9.93 3.136 49.1 0.095 8.1 0.264 -83.7 15.19
7.0 0.676 154.9 8.72 2.728 37.7 0.096 5.9 0.244 -93.5 14.54
8.0 0.679 144.5 7.73 2.435 27.0 0.099 4.3 0.230 -104.1 12.94
9.0 0.686 133.5 6.84 2.198 16.2 0.102 2.9 0.222 -116.6 11.58
10.0 0.684 120.8 6.03 2.002 5.1 0.107 0.7 0.222 -129.0 10.44
11.0 0.688 107.5 5.30 1.841 -5.9 0.113 -1.7 0.230 -140.8 9.69
12.0 0.693 93.7 4.59 1.696 -17.2 0.121 -5.2 0.239 -151.9 9.02
13.0 0.710 82.7 3.86 1.559 -28.2 0.129 -8.9 0.232 -164.6 8.47
14.0 0.743 68.6 3.19 1.443 -39.8 0.139 -14.3 0.222 176.6 8.42
15.0 0.760 56.5 2.37 1.314 -51.5 0.147 -20.2 0.232 155.6 7.69
16.0 0.805 46.2 1.42 1.177 -62.2 0.153 -26.2 0.251 134.3 8.26
17.0 0.830 38.1 0.43 1.051 -72.8 0.158 -32.5 0.293 112.0 8.07
18.0 0.872 31.5 -0.58 0.935 -83.1 0.163 -39.1 0.353 92.7 7.59
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.26 0.64 -4.4 0.14 23.79
0.9 0.27 0.57 7.5 0.13 21.80
1.0 0.30 0.54 11.1 0.13 21.60
1.9 0.46 0.49 36.6 0.11 18.06
2.0 0.41 0.48 40.4 0.12 17.92
2.4 0.47 0.44 50.3 0.11 16.79
3.0 0.55 0.36 69.5 0.10 15.70
3.9 0.61 0.32 101.3 0.08 14.24
5.0 0.74 0.32 139.5 0.06 12.86
5.8 0.88 0.35 161.5 0.05 12.01
6.0 0.90 0.35 163.9 0.05 11.82
7.0 1.00 0.37 -173.6 0.06 10.93
8.0 1.12 0.41 -158.2 0.07 10.24
9.0 1.25 0.46 -143.0 0.09 9.66
10.0 1.46 0.46 -127.2 0.15 8.85
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, VDS = 2.7V, IDS = 10 mA
40
30
20
10
0
-10
Figure 29. MSG/MAG and |S21|2 vs.
Frequency at 2.7V, 10 mA.
FREQUENCY (GHz)
020
10515
MSG/MAG and |S21|2 (dB)
|S
21
|
2
MAG MSG
MSG
12
ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 15 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.995 -6.5 21.98 12.559 175.6 0.006 86.4 0.793 -3.2 33.21
0.5 0.949 -31.2 21.47 11.839 156.9 0.026 71.0 0.745 -15.2 26.58
0.9 0.894 -54.0 20.75 10.905 142.3 0.043 60.1 0.691 -26.4 24.04
1.0 0.882 -59.4 20.55 10.650 138.9 0.047 57.5 0.673 -28.9 23.55
1.5 0.814 -84.0 19.37 9.298 123.4 0.061 46.6 0.589 -39.7 21.83
1.9 0.768 -101.1 18.34 8.265 112.7 0.068 39.5 0.526 -46.6 20.85
2.0 0.758 -105.1 18.10 8.034 110.3 0.070 38.0 0.511 -48.1 20.60
2.5 0.718 -123.1 16.86 6.966 99.3 0.076 31.4 0.447 -54.6 19.62
3.0 0.691 -138.7 15.70 6.095 89.7 0.079 26.3 0.393 -59.9 18.87
4.0 0.668 -163.5 13.64 4.806 73.6 0.083 19.4 0.318 -68.8 17.63
5.0 0.667 177.5 11.88 3.928 59.9 0.085 15.0 0.268 -77.7 16.65
6.0 0.668 164.3 10.49 3.345 48.5 0.088 13.1 0.230 -83.3 15.80
7.0 0.671 152.2 9.26 2.904 37.5 0.091 11.4 0.212 -93.0 15.04
8.0 0.673 142.3 8.27 2.591 27.0 0.095 10.0 0.198 -103.4 12.89
9.0 0.682 131.6 7.37 2.335 16.4 0.101 8.4 0.190 -116.2 11.88
10.0 0.677 118.5 6.56 2.128 5.4 0.107 5.6 0.190 -129.6 10.70
11.0 0.684 105.8 5.83 1.956 -5.3 0.115 2.6 0.198 -142.6 10.06
12.0 0.690 91.7 5.12 1.804 -16.7 0.124 -1.7 0.210 -154.2 9.46
13.0 0.707 81.2 4.38 1.656 -27.5 0.133 -6.1 0.205 -167.8 8.93
14.0 0.744 66.4 3.68 1.528 -39.4 0.143 -12.3 0.200 172.5 9.10
15.0 0.750 55.1 2.85 1.389 -50.6 0.151 -18.7 0.212 150.9 7.85
16.0 0.806 45.2 1.88 1.242 -61.2 0.156 -25.1 0.236 129.7 9.01
17.0 0.824 37.1 0.92 1.112 -71.5 0.162 -31.6 0.282 107.9 8.37
18.0 0.872 31.0 -0.08 0.991 -81.5 0.166 -38.2 0.337 89.7 7.76
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.18 0.61 -6.0 0.12 24.49
0.9 0.18 0.56 6.8 0.12 22.38
1.0 0.24 0.5 10.7 0.11 22.32
1.9 0.38 0.45 36.9 0.1 18.78
2.0 0.33 0.43 41.9 0.1 18.65
2.4 0.42 0.39 50.9 0.1 17.47
3.0 0.5 0.31 73.0 0.08 16.37
3.9 0.55 0.28 107.0 0.07 14.83
5.0 0.66 0.29 146.6 0.06 13.4
5.8 0.83 0.33 168.7 0.05 12.54
6.0 0.84 0.34 170.7 0.05 12.36
7.0 0.95 0.36 -166.9 0.06 11.44
8.0 1.06 0.41 -152.3 0.07 10.69
9.0 1.18 0.46 -138.1 0.1 10.12
10.0 1.43 0.44 -122.5 0.16 9.21
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, VDS = 2.7V, IDS = 15 mA
40
30
20
10
0
-10
Figure 30. MSG/MAG and |S
21
|
2
vs.
Frequency at 2.7V, 15 mA.
FREQUENCY (GHz)
020
10515
MSG/MAG and |S21|2 (dB)
|S
21
|
2
MAG MSG
MSG
13
ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 20 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.995 -6.8 22.92 13.988 175.4 0.005 86.4 0.772 -3.4 34.47
0.5 0.943 -33.0 22.35 13.103 155.9 0.024 70.6 0.72 -15.7 27.37
0.9 0.883 -56.9 21.53 11.932 140.7 0.04 59.4 0.662 -27.1 24.75
1.0 0.87 -62.4 21.30 11.616 137.3 0.043 56.9 0.643 -29.6 24.32
1.5 0.798 -87.6 20.00 10.004 121.6 0.056 46.2 0.557 -40.2 22.52
1.9 0.752 -104.9 18.91 8.822 111.0 0.063 39.6 0.494 -46.7 21.46
2.0 0.743 -108.8 18.65 8.557 108.6 0.064 38.2 0.48 -48.1 21.26
2.5 0.704 -126.7 17.35 7.367 97.8 0.069 32.3 0.417 -54.2 20.28
3.0 0.68 -142.1 16.14 6.411 88.4 0.072 27.8 0.367 -59.0 19.50
4.0 0.66 -166.3 14.02 5.026 72.8 0.076 22.0 0.297 -67.2 18.20
5.0 0.662 175.2 12.25 4.095 59.5 0.079 18.6 0.251 -75.7 17.15
6.0 0.664 162.6 10.84 3.483 48.4 0.083 17.4 0.216 -80.7 16.23
7.0 0.667 150.9 9.61 3.022 37.6 0.087 16.1 0.199 -90.4 14.69
8.0 0.67 141.2 8.61 2.695 27.3 0.093 14.8 0.185 -100.6 13.08
9.0 0.679 130.8 7.71 2.429 16.9 0.099 13.0 0.177 -113.5 12.08
10.0 0.677 118.1 6.90 2.213 6.0 0.107 9.9 0.178 -127.2 11.08
11.0 0.683 105.4 6.17 2.034 -4.6 0.116 6.4 0.186 -140.4 10.44
12.0 0.688 91.4 5.46 1.876 -15.8 0.126 1.8 0.198 -152.2 9.85
13.0 0.705 80.9 4.72 1.722 -26.5 0.136 -3.2 0.193 -165.9 9.37
14.0 0.741 66.5 4.03 1.59 -38.3 0.146 -9.8 0.188 173.7 9.78
15.0 0.75 55.0 3.19 1.444 -49.5 0.154 -16.5 0.2 151.1 8.35
16.0 0.803 45.1 2.22 1.291 -60.1 0.159 -23.2 0.224 129.5 9.10
17.0 0.823 37.2 1.26 1.156 -70.3 0.165 -29.8 0.269 107.3 8.45
18.0 0.872 31.0 0.27 1.032 -80.2 0.168 -36.6 0.325 88.8 7.88
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.18 0.61 -6.7 0.12 24.89
0.9 0.18 0.55 5.9 0.11 22.72
1.0 0.23 0.49 9.9 0.10 22.68
1.9 0.39 0.43 37.8 0.09 19.18
2.0 0.36 0.42 41.6 0.09 18.98
2.4 0.43 0.37 51.7 0.09 17.83
3.0 0.51 0.29 73.6 0.08 16.69
3.9 0.56 0.26 110.7 0.07 15.19
5.0 0.68 0.28 152.8 0.05 13.79
5.8 0.83 0.33 172.9 0.05 12.91
6.0 0.85 0.33 175.6 0.05 12.73
7.0 0.95 0.37 -162.4 0.06 11.80
8.0 1.06 0.41 -148.8 0.08 11.06
9.0 1.19 0.47 -135.5 0.10 10.47
10.0 1.41 0.46 -119.2 0.17 9.59
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, VDS = 2.7V, IDS = 20 mA
40
30
20
10
0
-10
Figure 31. MSG/MAG and |S
21
|
2
vs.
Frequency at 2.7V, 20 mA.
FREQUENCY (GHz)
020
10515
MSG/MAG and |S21|2 (dB)
|S
21
|
2
MAG MSG
MSG
14
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 10 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.996 -5.9 20.49 10.578 176.0 0.006 86.1 0.835 -2.8 32.46
0.5 0.957 -28.4 20.05 10.059 158.5 0.027 72.0 0.792 -13.4 25.71
0.9 0.909 -49.6 19.48 9.420 144.8 0.045 61.5 0.747 -23.5 23.21
1.0 0.899 -54.6 19.32 9.246 141.6 0.049 59.1 0.730 -25.9 22.76
1.5 0.836 -78.1 18.32 8.241 126.3 0.065 47.9 0.653 -36.1 21.03
1.9 0.792 -94.9 17.41 7.424 115.7 0.074 40.3 0.593 -42.7 20.01
2.0 0.782 -98.8 17.20 7.241 113.2 0.075 38.6 0.578 -44.2 19.85
2.5 0.740 -116.8 16.07 6.360 101.9 0.082 31.3 0.513 -50.7 18.90
3.0 0.709 -132.8 14.99 5.616 91.9 0.086 25.3 0.458 -56.0 18.15
4.0 0.680 -158.5 13.03 4.481 75.1 0.090 16.9 0.378 -64.9 16.97
5.0 0.675 -178.4 11.33 3.684 60.9 0.091 11.3 0.325 -73.5 16.07
6.0 0.675 167.8 9.96 3.146 49.1 0.092 8.7 0.287 -79.1 15.34
7.0 0.676 155.1 8.75 2.738 37.6 0.093 6.6 0.267 -88.4 14.69
8.0 0.678 144.9 7.77 2.447 26.8 0.095 5.4 0.252 -98.6 12.90
9.0 0.686 133.8 6.88 2.209 16.0 0.099 4.1 0.242 -110.5 11.73
10.0 0.682 120.5 6.09 2.015 4.7 0.104 2.1 0.241 -122.9 10.56
11.0 0.688 107.5 5.37 1.855 -6.3 0.110 0.0 0.247 -135.1 9.88
12.0 0.694 93.3 4.67 1.711 -17.8 0.118 -3.4 0.256 -146.5 9.26
13.0 0.711 82.4 3.92 1.571 -28.8 0.127 -6.9 0.250 -159.0 8.76
14.0 0.746 67.5 3.24 1.452 -40.8 0.137 -12.6 0.240 -176.5 8.90
15.0 0.753 55.9 2.41 1.320 -52.4 0.146 -18.5 0.246 163.0 7.74
16.0 0.807 45.8 1.46 1.183 -63.1 0.152 -24.5 0.260 142.0 8.91
17.0 0.826 37.6 0.48 1.057 -73.7 0.159 -30.8 0.297 119.0 8.23
18.0 0.874 31.3 -0.53 0.941 -84.1 0.164 -37.5 0.349 98.9 7.59
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.23 0.65 -4.3 0.14 23.81
0.9 0.24 0.58 7.4 0.13 21.82
1.0 0.26 0.54 10.7 0.13 21.62
1.9 0.43 0.50 36.2 0.11 18.05
2.0 0.38 0.48 40.4 0.12 17.96
2.4 0.43 0.44 49.8 0.11 16.84
3.0 0.51 0.36 69.2 0.10 15.76
3.9 0.59 0.31 99.4 0.08 14.23
5.0 0.70 0.32 139.3 0.06 12.94
5.8 0.85 0.35 160.3 0.05 12.04
6.0 0.86 0.35 162.3 0.05 11.85
7.0 0.98 0.36 -173.7 0.06 10.99
8.0 1.09 0.41 -158.6 0.07 10.29
9.0 1.23 0.45 -143.7 0.09 9.71
10.0 1.45 0.44 -126.8 0.15 8.88
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, VDS = 3V, IDS = 10 mA
40
30
20
10
0
-10
Figure 32. MSG/MAG and |S
21
|
2
vs.
Frequency at 3V, 10 mA.
FREQUENCY (GHz)
020
10515
MSG/MAG and |S
21
|
2
(dB)
|S
21
|
2
MAG MSG
MSG
15
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 15 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.995 -6.5 22.02 12.623 175.6 0.005 86.0 0.802 -3.1 34.02
0.5 0.949 -31.2 21.51 11.900 156.9 0.025 71.0 0.754 -14.6 26.78
0.9 0.894 -54.1 20.79 10.958 142.3 0.041 60.1 0.700 -25.4 24.27
1.0 0.882 -59.4 20.59 10.701 138.9 0.045 57.6 0.682 -27.8 23.76
1.5 0.813 -84.0 19.41 9.341 123.3 0.059 46.7 0.599 -38.1 22.00
1.9 0.768 -101.2 18.38 8.301 112.7 0.066 39.7 0.537 -44.5 21.00
2.0 0.758 -105.1 18.14 8.068 110.3 0.067 38.1 0.522 -45.9 20.81
2.5 0.717 -123.1 16.90 6.996 99.2 0.073 31.6 0.459 -52.0 19.82
3.0 0.690 -138.7 15.74 6.120 89.7 0.076 26.7 0.407 -56.9 19.06
4.0 0.668 -163.5 13.68 4.829 73.6 0.080 20.0 0.334 -65.0 17.81
5.0 0.666 177.5 11.93 3.947 59.9 0.082 15.8 0.286 -73.3 16.82
6.0 0.668 164.4 10.53 3.363 48.5 0.084 14.2 0.250 -78.4 16.02
7.0 0.670 152.3 9.31 2.921 37.5 0.087 12.9 0.232 -87.6 14.96
8.0 0.672 142.4 8.32 2.607 27.0 0.092 11.8 0.218 -97.7 12.99
9.0 0.681 131.7 7.43 2.351 16.4 0.098 10.4 0.209 -110.0 12.01
10.0 0.678 118.6 6.62 2.142 5.3 0.104 7.8 0.209 -122.9 10.90
11.0 0.684 105.8 5.89 1.970 -5.5 0.113 4.9 0.215 -135.4 10.28
12.0 0.690 91.8 5.19 1.817 -16.8 0.122 0.7 0.226 -147.1 9.70
13.0 0.707 81.3 4.44 1.667 -27.6 0.132 -3.7 0.221 -160.3 9.23
14.0 0.744 66.6 3.75 1.540 -39.5 0.142 -10.0 0.211 -179.5 9.62
15.0 0.751 55.2 2.93 1.401 -50.7 0.151 -16.4 0.218 159.7 8.26
16.0 0.807 45.3 1.97 1.254 -61.4 0.157 -22.8 0.236 137.8 9.02
17.0 0.824 37.3 1.01 1.123 -71.9 0.163 -29.5 0.277 114.5 8.38
18.0 0.874 31.1 0.02 1.002 -82.0 0.167 -36.2 0.330 95.0 7.78
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.18 0.63 -6.3 0.12 24.41
0.9 0.19 0.56 6.8 0.12 22.45
1.0 0.23 0.51 10.0 0.11 22.29
1.9 0.39 0.46 36.5 0.10 18.75
2.0 0.35 0.44 40.8 0.10 18.61
2.4 0.42 0.39 50.1 0.10 17.46
3.0 0.49 0.31 72.5 0.08 16.42
3.9 0.56 0.27 104.4 0.07 14.80
5.0 0.66 0.29 146.9 0.06 13.48
5.8 0.83 0.33 167.4 0.05 12.58
6.0 0.84 0.33 169.0 0.05 12.38
7.0 0.94 0.35 -166.9 0.06 11.49
8.0 1.05 0.40 -152.7 0.07 10.77
9.0 1.19 0.46 -138.6 0.09 10.23
10.0 1.40 0.44 -121.9 0.16 9.32
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, VDS = 3V, IDS = 15 mA
40
30
20
10
0
-10
Figure 33. MSG/MAG and |S
21
|
2
vs.
Frequency at 3V, 15 mA.
FREQUENCY (GHz)
020
10515
MSG/MAG and |S
21
|
2
(dB)
|S
21
|
2
MAG MSG
MSG
16
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 20 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.995 -6.8 22.91 13.987 175.4 0.005 86.1 0.781 -3.3 34.47
0.5 0.943 -33.0 22.35 13.101 155.8 0.024 70.5 0.730 -15.2 27.37
0.9 0.883 -56.9 21.53 11.932 140.7 0.039 59.5 0.672 -26.1 24.86
1.0 0.870 -62.4 21.30 11.614 137.2 0.042 56.9 0.654 -28.5 24.42
1.5 0.798 -87.6 20.00 10.004 121.5 0.054 46.3 0.569 -38.5 22.68
1.9 0.752 -104.9 18.91 8.820 111.0 0.061 39.7 0.506 -44.6 21.60
2.0 0.743 -108.9 18.64 8.555 108.6 0.062 38.3 0.493 -46.0 21.40
2.5 0.704 -126.7 17.35 7.368 97.7 0.067 32.4 0.431 -51.6 20.41
3.0 0.679 -142.1 16.14 6.412 88.4 0.070 28.1 0.383 -56.0 19.62
4.0 0.660 -166.3 14.03 5.028 72.7 0.074 22.5 0.314 -63.5 18.32
5.0 0.662 175.3 12.25 4.099 59.4 0.076 19.2 0.270 -71.5 17.32
6.0 0.664 162.6 10.85 3.488 48.3 0.080 18.3 0.237 -76.2 16.39
7.0 0.667 150.9 9.62 3.027 37.5 0.084 17.2 0.220 -85.2 14.66
8.0 0.670 141.3 8.63 2.701 27.2 0.090 16.3 0.207 -95.2 13.18
9.0 0.679 130.9 7.73 2.435 16.8 0.096 14.6 0.198 -107.6 12.20
10.0 0.677 118.1 6.92 2.219 5.9 0.104 11.7 0.198 -120.6 11.21
11.0 0.683 105.4 6.19 2.040 -4.8 0.114 8.4 0.205 -133.4 10.64
12.0 0.689 91.4 5.49 1.881 -16.0 0.124 3.8 0.216 -145.2 10.10
13.0 0.705 80.9 4.75 1.727 -26.8 0.134 -1.0 0.210 -158.4 9.62
14.0 0.742 66.4 4.05 1.594 -38.6 0.145 -7.7 0.199 -178.0 10.41
15.0 0.751 55.0 3.23 1.451 -49.8 0.153 -14.4 0.207 160.3 8.80
16.0 0.806 45.1 2.27 1.298 -60.4 0.159 -21.1 0.225 138.1 9.12
17.0 0.826 37.2 1.32 1.164 -70.8 0.165 -27.9 0.265 114.0 8.48
18.0 0.874 31.1 0.33 1.039 -80.8 0.170 -34.9 0.320 94.1 7.86
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.17 0.62 -6.2 0.12 24.92
0.9 0.18 0.55 6.0 0.11 22.79
1.0 0.24 0.50 9.5 0.10 22.59
1.9 0.39 0.43 37.5 0.10 19.22
2.0 0.36 0.41 41.2 0.09 19.00
2.4 0.42 0.37 50.9 0.09 17.83
3.0 0.50 0.29 73.6 0.08 16.72
3.9 0.57 0.25 109.4 0.07 15.18
5.0 0.68 0.28 151.6 0.06 13.80
5.8 0.83 0.32 172.5 0.05 12.93
6.0 0.85 0.33 175.6 0.05 12.77
7.0 0.93 0.36 -162.7 0.06 11.84
8.0 1.05 0.41 -149.1 0.08 11.09
9.0 1.19 0.46 -135.5 0.10 10.53
10.0 1.39 0.45 -119.4 0.17 9.64
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, VDS = 3V, IDS = 20 mA
40
30
20
10
0
-10
Figure 34. MSG/MAG and |S
21
|
2
vs.
Frequency at 3V, 20 mA.
FREQUENCY (GHz)
020
10515
MSG/MAG and |S
21
|
2
(dB)
|S
21
|
2
MAG
MAG
MSGMSG
MSG
17
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 30 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.994 -7.4 23.90 15.662 175.0 0.005 86.1 0.760 -3.4 34.96
0.5 0.936 -35.3 23.25 14.544 154.5 0.022 69.8 0.705 -15.4 28.20
0.9 0.870 -60.4 22.32 13.058 138.7 0.035 58.7 0.644 -26.2 25.72
1.0 0.856 -66.1 22.05 12.665 135.2 0.038 56.2 0.624 -28.5 25.23
1.5 0.781 -92.0 20.61 10.732 119.4 0.048 46.0 0.539 -37.7 23.49
1.9 0.736 -109.4 19.44 9.374 108.9 0.054 40.1 0.480 -43.1 22.40
2.0 0.726 -113.3 19.15 9.072 106.6 0.055 38.8 0.467 -44.2 22.17
2.5 0.690 -131.0 17.79 7.753 96.0 0.059 33.7 0.410 -49.0 21.19
3.0 0.668 -146.1 16.54 6.713 86.9 0.062 30.3 0.367 -52.7 20.35
4.0 0.653 -169.6 14.38 5.234 71.7 0.066 26.1 0.307 -59.2 18.99
5.0 0.656 172.7 12.58 4.258 58.7 0.069 23.8 0.268 -66.7 17.90
6.0 0.659 160.5 11.17 3.618 47.9 0.074 23.6 0.238 -70.9 16.89
7.0 0.663 149.0 9.93 3.138 37.2 0.079 22.9 0.224 -79.8 14.61
8.0 0.666 139.6 8.94 2.798 27.1 0.086 21.9 0.211 -89.5 13.35
9.0 0.676 129.3 8.03 2.522 16.8 0.094 20.1 0.203 -101.5 12.55
10.0 0.674 116.6 7.22 2.296 5.9 0.103 16.9 0.202 -114.5 11.58
11.0 0.680 104.1 6.48 2.109 -4.6 0.113 13.1 0.208 -127.3 11.01
12.0 0.688 90.3 5.77 1.944 -15.8 0.124 8.0 0.219 -139.4 10.62
13.0 0.705 80.1 5.03 1.784 -26.4 0.135 3.0 0.213 -152.3 10.38
14.0 0.743 65.8 4.34 1.648 -38.0 0.147 -4.1 0.200 -170.8 10.50
15.0 0.751 54.5 3.53 1.502 -49.2 0.156 -11.1 0.203 166.8 9.84
16.0 0.806 44.9 2.56 1.343 -59.8 0.162 -18.1 0.218 143.9 9.19
17.0 0.826 37.0 1.64 1.208 -70.1 0.168 -25.2 0.254 118.4 8.57
18.0 0.875 31.0 0.67 1.080 -80.2 0.174 -32.4 0.306 97.4 7.93
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.16 0.60 -6.2 0.11 25.60
0.9 0.18 0.55 6.4 0.11 23.17
1.0 0.24 0.47 10.1 0.10 23.19
1.9 0.39 0.39 39.1 0.09 19.73
2.0 0.36 0.38 42.7 0.09 19.48
2.4 0.45 0.33 54.2 0.09 18.36
3.0 0.52 0.26 79.0 0.08 17.20
3.9 0.59 0.23 119.0 0.06 15.66
5.0 0.71 0.28 162.1 0.05 14.28
5.8 0.86 0.33 -179.3 0.05 13.39
6.0 0.89 0.33 -176.7 0.05 13.20
7.0 0.99 0.37 -156.1 0.07 12.27
8.0 1.12 0.42 -143.5 0.09 11.50
9.0 1.26 0.48 -130.8 0.12 10.96
10.0 1.50 0.46 -115.1 0.20 10.01
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, VDS = 3V, IDS = 30 mA
40
30
20
10
0
-10
Figure 35. MSG/MAG and |S
21
|
2
vs.
Frequency at 3V, 30 mA.
FREQUENCY (GHz)
020
10515
MSG/MAG and |S
21
|
2
(dB)
|S
21
|
2
MAG MSG
MSG
18
S and Noise Parameter Measurements
The position of the reference
planes used for the measurement
of both S and Noise Parameter
measurements is shown in Figure
36. The reference plane can be
described as being at the center
of both the gate and drain pads.
S and noise parameters are
measured with a 50 ohm
microstrip test fixture made with
a 0.010" thickness aluminum
substrate. Both source pads are
connected directly to ground via
a 0.010" thickness metal rib
which provides a very low
inductance path to ground for
both source pads. The inductance
associated with the addition of
printed circuit board plated
through holes and source bypass
capacitors must be added to the
computer circuit simulation to
properly model the effect of
grounding the source leads in a
typical amplifier design.
Gate
Pin 2
Source
Pin 3
Drain
Pin 4
Source
Pin 1
Reference
Plane
Microstrip
Transmission Lines
Vx
Figure 36. Position of the Reference Planes.
Noise Parameter Applications
Information
The Fmin values are based on a
set of 16 noise figure measure-
ments made at 16 different
impedances using an ATN NP5
test system. From these measure-
ments, a true Fmin is calculated.
Fmin represents the true mini-
mum noise figure of the device
when the device is presented
with an impedance matching
network that transforms the
source impedance, typically 50Ω,
to an impedance represented by
the reflection coefficient Γo. The
designer must design a matching
network that will present Γo to
the device with minimal associ-
ated circuit losses. The noise
figure of the completed amplifier
is equal to the noise figure of the
device plus the losses of the
matching network preceding the
device. The noise figure of the
device is equal to Fmin only
when the device is presented
with Γo. If the reflection coeffi-
cient of the matching network is
other than Γo, then the noise
figure of the device will be
greater than Fmin based on the
following equation.
NF = F
min
+ 4 R
n
|Γ
s
– Γ
o
| 2
Zo (|1 + Γ
o
|2)(1 - |Γ
s
|2)
Where Rn/Zo is the normalized
noise resistance, Γo is the opti-
mum reflection coefficient
required to produce Fmin and
Γ
s
is the reflection coefficient of the
source impedance actually
presented to the device.
The losses of the matching
networks are non-zero and they
will also add to the noise figure
of the device creating a higher
amplifier noise figure. The losses
of the matching networks are
related to the Q of the compo-
nents and associated printed
circuit board loss. Γo is typically
fairly low at higher frequencies
and increases as frequency is
lowered. Larger gate width
devices will typically have a
lower Γo as compared to nar-
rower gate width devices. Typi-
cally for FETs , the higher Γo
usually infers that an impedance
much higher than 50Ω is re-
quired for the device to produce
Fmin. At VHF frequencies and
even lower L Band frequencies,
the required impedance can be in
the vicinity of several thousand
ohms. Matching to such a high
impedance requires very hi-Q
components in order to minimize
circuit losses. As an example at
900 MHz, when air wound coils
(Q>100)are used for matching
networks, the loss can still be up
to 0.25 dB which will add di-
rectly to the noise figure of the
device. Using muiltilayer molded
inductors with Qs in the 30 to 50
range results in additional loss
over the air wound coil. Losses as
high as 0.5 dB or greater add to
the typical 0.15 dB Fmin of the
device creating an amplifier
noise figure of nearly 0.65 dB.
SMT Assembly
The package can be soldered
using either lead-bearing or lead-
free alloys (higher peak tempera-
tures). Reliable assembly of
surface mount components is a
complex process that involves
many material, process, and
equipment factors, including:
method of heating (e.g. IR or
vapor phase reflow, wave solder-
ing, etc) circuit board material,
conductor thickness and pattern,
type of solder alloy, and the
thermal conductivity and ther-
mal mass of components. Compo-
nents with a low mass, such as
the Minipak 1412 package, will
reach solder reflow temperatures
faster than those with a greater
mass.
The recommended leaded solder
time-temperature profile is
shown in Figure 37. This profile
is representative of an IR reflow
type of surface mount assembly
process. After ramping up from
room temperature, the circuit
board with components attached
to it (held in place with solder
paste) passes through one or
more preheat zones. The preheat
zones increase the temperature
of the board and components to
prevent thermal shock and begin
evaporating solvents from the
solder paste. The reflow zone
19
briefly elevates the temperature
sufficiently to produce a reflow
of the solder.
The rates of change of tempera-
ture for the ramp-up and cool-
down zones are chosen to be low
enough to not cause deformation
of board or damage to compo-
nents due to thermal shock. The
maximum temperature in the
reflow zone (Tmax) should not
exceed 235°C for leaded solder.
These parameters are typical for
a surface mount assembly
process for the ATF-551M4. As a
general guideline, the circuit
board and components should
only be exposed to the minimum
temperatures and times the
necessary to achieve a uniform
reflow of solder.
The recommended lead-free
reflow profile is shown in Fig-
ure 38.
Electrostatic Sensitivity
FETs and RFICs are electrostatic
discharge (ESD) sensitive de-
vices. Agilent devices are manu-
factured using a very robust and
reliable PHEMT process, however,
permanent damage may occur to
these devices if they are sub-
jected to high-energy electrostatic
discharges. Electrostatic charges
as high as several thousand volts
(which readily accumulate on the
human body and on test equip-
ment) can discharge without
detection and may result in
failure or degradation in perfor-
mance and reliability.
TIME (seconds)
TMAX
TEMPERATURE (°C)
0
0
50
100
150
200
250
60
Preheat
Zone Cool Down
Zone
Reflow
Zone
120 180 240 300
Figure 38. Lead-free Solder Reflow Profile.
Figure 37. Leaded Solder Reflow Profile.
Electronic devices may be
subjected to ESD damage in any
of the following areas:
• Storage & handling
• Inspection
• Assembly & testing
• In-circuit use
The ATF-551M4 is an ESD Class 1
device. Therefore, proper ESD
precautions are recommended
when handling, inspecting,
testing, and assembling these
devices to avoid damage.
Any user-accessible points in
wireless equipment (e.g. antenna
or battery terminals) provide an
opportunity for ESD damage.
For circuit applications in which
the ATF-551M4 is used as an
input or output stage with close
coupling to an external antenna,
the device should be protected
from high voltage spikes due to
human contact with the antenna.
A good practice, illustrated in
Figure 39, is to place a shunt
inductor or RF choke at the
antenna connection to protect
the receiver and transmitter
circuits. It is often advantageous
to integrate the RF choke into the
design of the diplexer or T/R
switch control circuitry.
Figure 39. In-circuit ESD Protection.
TIME (seconds)
Peak Temperature
Min. 240°C
Max. 255°C
TEMPERATURE (°C)
0
0
50
150
100
221
200
250
300
350
60 9030 120 150 210180 270 300 330240 360
Preheat 130–170°C
Min. 60s
Max. 150s
Reflow Time
Min. 60s
Max. 90s
20
ATF-551M4 Applications
Information
Introduction
Agilent Technologies’s
ATF-551M4 is a low noise
enhancement mode PHEMT
designed for use in low cost
commercial applications in the
VHF through 10 GHz frequency
range. As opposed to a typical
depletion mode PHEMT where the
gate must be made negative with
respect to the source for proper
operation, an enhancement mode
PHEMT requires that the gate be
made more positive than the
source for normal operation.
Therefore a negative power
supply voltage is not required for
an enhancement mode device.
Biasing an enhancement mode
PHEMT is much like biasing the
typical bipolar junction transistor.
Instead of a 0.7V base to emitter
voltage, the ATF-551M4 enhance-
ment mode PHEMT requires a
nominal 0.47V potential between
the gate and source for a nominal
drain current of 10 mA.
Matching Networks
The techniques for impedance
matching an enhancement mode
device are very similar to those for
matching a depletion mode device.
The only difference is in the
method of supplying gate bias. S
and Noise Parameters for various
bias conditions are listed in this
data sheet. The circuit shown in
Figure 1 shows a typical LNA
circuit normally used for 900 and
1900 MHz applications. Consult
the Agilent Technologies web site
for application notes covering
specific designs and applications.
High pass impedance matching
networks consisting of L1/C1 and
L4/C4 provide the appropriate
match for noise figure, gain, S11
and S22. The high pass structure
also provides low frequency gain
reduction which can be beneficial
from the standpoint of improving
out-of-band rejection.
Capacitors C2 and C5 provide a
low impedance in-band RF
bypass for the matching net-
works. Resistors R3 and R4
provide a very important low
frequency termination for the
device. The resistive termination
improves low frequency stability.
Capacitors C3 and C6 provide
the RF bypass for resistors R3
and R4. Their value should be
chosen carefully as C3 and C6
also provide a termination for
low frequency mixing products.
These mixing products are as a
result of two or more in-band
signals mixing and producing
third order in-band distortion
products. The low frequency or
difference mixing products are
terminated by C3 and C6. For
best suppression of third order
distortion products based on the
CDMA 1.25 MHz signal spacing,
C3 and C6 should be 0.1 uF in
value. Smaller values of capaci-
tance will not suppress the
generation of the 1.25 MHz
difference signal and as a result
will show up as poorer two tone
IP3 results.
INPUT C1
C2
C3
L1
R4
R1 R2
Vdd
R3
L2 L3
L4
Q1
Zo Zo
C4
C5
C6
OUTPUT
R5
Figure 1. Typical ATF-551M4 LNA with Passive
Biasing.
Bias Networks
One of the major advantages of
the enhancement mode technol-
ogy is that it allows the designer
to be able to dc ground the
source leads and then merely
apply a positive voltage on the
gate to set the desired amount of
quiescent drain current Id.
Whereas a depletion mode
PHEMT pulls maximum drain
current when Vgs= 0V, an en-
hancement mode PHEMT pulls
only a small amount of leakage
current when Vgs= 0V. Only when
Vgs is increased above Vth, the
device threshold voltage, will
drain current start to flow. At a
Vds of 2.7V and a nominal Vgs of
0.47V, the drain current Id will be
approximately 10 mA. The data
sheet suggests a minimum and
maximum Vgs over which the
desired amount of drain current
will be achieved. It is also impor-
tant to note that if the gate
terminal is left open circuited,
the device will pull some amount
of drain current due to leakage
current creating a voltage differ-
ential between the gate and
source terminals.
Passive Biasing
Passive biasing of the ATF-551M4
is accomplished by the use of a
voltage divider consisting of R1
and R2. The voltage for the
divider is derived from the drain
voltage which provides a form of
voltage feedback through the use
of R3 to help keep drain current
constant. In the case of a typical
depletion mode FET, the voltage
divider which is normally con-
nected to a negative voltage
source is connected to the gate
through resistor R4. Additional
resistance in the form of R5
(approximately 10KΩ) is added
to provide current limiting for
the gate of enhancement mode
devices such as the ATF-551M4.
This is especially important
when the device is driven to
P1dB or Psat.
Resistor R3 is calculated based
on desired Vds, Ids and available
power supply voltage.
21
R3 = VDD – Vds (1)
p
Ids + IBB
VDD is the power supply voltage.
Vds is the device drain to source
voltage.
Ids is the desired drain current.
IBB is the current flowing
through the R1/R2 resistor
voltage divider network.
The value of resistors R1 and R2
are calculated with the following
formulas.
R1 = Vgs (2)
p
IBB
R2 = (Vds – Vgs) R1 (3)
p
Vgs
Example Circuit
VDD = 3V
Vds = 2.7V
Ids = 10 mA
Vgs = 0.47V
Choose I
BB
to be at least 10X the
maximum expected gate leakage
current. I
BB
was conservatively
chosen to be 0.5 mA for this
example. Using equations (1), (2),
and (3) the resistors are calcu-
lated as follows
R1 = 940Ω
R2 = 4460Ω
R3 = 28.6Ω
Active Biasing
Active biasing provides a means
of keeping the quiescent bias
point constant over temperature
and constant over lot to lot
variations in device dc perfor-
mance. The advantage of the
active biasing of an enhancement
mode PHEMT versus a depletion
mode PHEMT is that a negative
power source is not required. The
techniques of active biasing an
enhancement mode device are
very similar to those used to bias
a bipolar junction transistor.
An active bias scheme is shown
in Figure 2.
INPUT C1
C2
C3
C7
L1
R5
R6
R7 R3
R2
R1
Q2 Vdd
R4
L2 L3
L4
Q1
Zo Zo
C4
C5
C6
OUTPUT
Figure 2. Typical ATF-551M4 LNA with Active
Biasing.
R1 and R2 provide a constant
voltage source at the base of a
PNP transistor at Q2. The con-
stant voltage at the base of Q2 is
raised by 0.7 volts at the emitter.
The constant emitter voltage plus
the regulated V
DD
supply are
present across resistor R3.
Constant voltage across R3
provides a constant current
supply for the drain current.
Resistors R1 and R2 are used to
set the desired Vds. The combined
series value of these resistors also
sets the amount of extra current
consumed by the bias network.
The equations that describe the
circuit’s operation are as follows.
VE = Vds + (Ids • R4) (1)
R3 = VDD – VE (2)
p
Ids
VB = VE – VBE (3)
VB = R1 VDD (4)
p
R1 + R2
VDD = IBB (R1 + R2) (5)
Rearranging equation (4)
provides the following formula
R2 = R1 (VDD – VB) (4A)
p
VB
and rearranging equation (5)
provides the follow formula
R1 = VDD (5A)
9
IBB
(1 + VDD – VB )
p
VB
Example Circuit
VDD = 3 V
Vds = 2.7 V
Ids = 10 mA
R4 = 10Ω
VBE = 0.7 V
Equation (1) calculates the
required voltage at the emitter o
the PNP transistor based o
desired Vds and Ids throug
resistor R4 to be 2.8V. Equation
(2) calculates the value of resistor
R3 which determines the drain
current Ids. In the example
R3=18.2Ω. Equation (3) calculates
the voltage required at the junc-
tion of resistors R1 and R2. This
voltage plus the step-up of the
base emitter junction determines
the regulated Vds. Equations (4)
and (5) are solved simultaneously
to determine the value of resistors
R1 and R2. In the example
R1=4200Ω and R2 =1800Ω.
R7 is chosen to be 1 kΩ. This
resistor keeps a small amount of
current flowing through Q2 to help
maintain bias stability. R6 is
chosen to be 10 KΩ. This value of
resistance is high enough to limit
Q1 gate current in the presence of
high RF drive levels as experi-
enced when Q1 is driven to the
P1dB gain compression point. C7
provides a low frequency bypass to
keep noise from Q2 effecting the
operation of Q1. C7 is typically
0.1 µF.
Maximum Suggested Gate Current
The maximum suggested gate
current for the ATF-551M4 is
1 mA. Incorporating resistor R5
in the passive bias network or
resistor R6 in the active bias
network safely limits gate current
to 500 µA at P1dB drive levels.
In order to minimize component
count in the passive biased
amplifier circuit, the 3 resistor
bias circuit consisting of R1, R2,
and R5 can be simplified if
desired. R5 can be removed if R1
is replaced with a 5.6KΩ resistor
22
ATF-551M4 Die Model
GATE
SOURCE
INSIDE Package
Port
G
Num=1
C
C1
C=0.28 pF
Port
S1
Num=2
SOURCE
DRAIN
Port
S2
Num=4
Port
D
Num=3
L
L6
L=0.147 nH
R=0.001
C
C2
C=0.046 pF
L
L7
L=0.234 nH
R=0.001
MSub
TLINP
TL3
Z=Z2 Ohm
L=23.6 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL9
Z=Z2 Ohm
L=11 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
VAR
VAR1
K=5
Z2=85
Z1=30
Var
Egn TLINP
TL1
Z=Z2/2 Ohm
L=22 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL7
Z=Z2/2 Ohm
L=5.2 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL5
Z=Z2 Ohm
L=27.5 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
L
L1
L=0.234 nH
R=0.001
L
L4
L=0.281 nH
R=0.001
GaAsFET
FET1
Mode1=MESFETM1
Mode=Nonlinear
MSUB
MSub2
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
ATF-551M4 Minipak Model
and if R2 is replaced with a 27KΩ
resistor. This combination should
limit gate current to a safe level.
PCB Layout
A suggested PCB pad print for
the miniature, Minipak 1412
package used by the ATF-551M4
is shown in Figure 3.
0.5
0.020
0.4
0.016
0.4
0.016
1.1
0.043
0.3
0.012
0.5
0.020
0.3
0.01
2
Figure 3. PCB Pad Print for Minipak 1412.
Package (mm [inches ]).
This pad print provides allow-
ance for package placement by
automated assembly equipment
without adding excessive
parasitics that could impair the
high frequency performance of
the ATF-551M4. The layout is
shown with a footprint of the
ATF-551M4 superimposed on the
PCB pads for reference.
For Further Information
The information presented here is
an introduction to the use of the
ATF-551M4 enhancement mode
PHEMT. More detailed application
circuit information is available
from Agilent Technologies. Consult
the web page or your local Agilent
Technologies sales representative.
NFET=yes
PFET=no
Vto=0.3
Beta=0.444
Lambda=72e-3
Alpha=13
Tau=
Tnom=16.85
Idstc=
Ucrit=-0.72
Vgexp=1.91
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.5 Ohm
Rf=
Gscap=2
Cgs=0.6193 pF
Cgd=0.1435 pF
Gdcap=2
Fc=0.65
Rgd=0.5 Ohm
Rd=2.025 Ohm
Rg=1.7 Ohm
Rs=0.675 Ohm
Ld=
Lg=0.094 nH
Ls=
Cds=0.100 pF
Rc=390 Ohm
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.95
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
Eg=
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
Advanced_Curtice2_Model
MESFETM1
23
MiniPak Package Outline Drawing
Ordering Information
Part Number No. of Devices Container
ATF-551M4-TR1 3000 7” Reel
ATF-551M4-TR2 10,000 13” Reel
ATF-551M4-BLK 100 antistatic bag
1.44 (0.058)
1.40 (0.056)
Top view
Side view
Dimensions are in millimeteres (inches)
Bottom view
1.20 (0.048)
1.16 (0.046)
0.70 (0.028)
0.58 (0.023)
1.12 (0.045)
1.08 (0.043)
3
2
4
1
0.82 (0.033)
0.78 (0.031)
0.32 (0.013)
0.28 (0.011)
-0.07 (-0.003)
-0.03 (-0.001)
0.00
-0.07 (-0.003)
-0.03 (-0.001)
0.42 (0.017)
0.38 (0.015)
0.92 (0.037)
0.88 (0.035)
1.32 (0.053)
1.28 (0.051)
0.00
Vx
Solder Pad Dimensions
For product information and a complete list of Agilent
contacts and distributors, please go to our web site.
www.agilent.com/semiconductors
E-mail: SemiconductorSupport@agilent.com
Data subject to change.
Copyright © 2003 Agilent Technologies, Inc.
Obsoletes 5988-4455EN
March 17, 2003
5988-9006EN
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
Note: Vx represents Package Marking Code.
Device orientation is indicated by package marking.
Vx
Vx
Vx
Vx
P
P
0
P
2
F
W
C
D
1
D
E
A
0
5° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
1.40 ± 0.05
1.53 ± 0.05
0.80 ± 0.05
4.00 ± 0.10
0.80 ± 0.05
0.055 ± 0.002
0.064 ± 0.002
0.031 ± 0.002
0.157 ± 0.004
0.031 ± 0.002
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.060 ± 0.004
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t
1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012 - 0.004
0.010 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
T
t
5.40 ± 0.10
0.062 ± 0.001
0.213 ± 0.004
0.0024 ± 0.00004
COVER TAPE
A
0
B
0
Device Orientation for Outline 4T, MiniPak 1412
Tape Dimensions
