GaAs INFRARED EMITTING DIODE OPTOELECTRONICS LED55B/C, LED56 Dp ESCRIPT The LED55B/C and LED56 are 940nm LEDs in a narrow angle, TO-46 package. = Good optical to mechanical alignment INCHES __| MILLIMETERS YMBOL NOTES m - SYMBOL 7 max] MIN. T MAX. = Mechanically and wavelength matched to the TO-18 A 255 6A? series phototransistor Bb O16 | 021 | 407 | 533 8D 209 | .230 | 5.31 | 5.84 = Hermetically sealed package @D, | 180 | 188 | 4.57 | 477 = High irradiance level e | 100NOM. | 254NOM. | 2 e, | .o50NOM. | 1.27NOM. | 2 h 030 76 j 031 | .044 79 | 1.11 k 036 | .046 92 | 1.16 1 1.00 25.4 45 45 45 45 3 3 ( , ! ANODE CATHODE (CONNECTED TO CASE) $T1604 NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2, LEADS HAVING MAX. DIAMETER .021" (.533mm) MEASURED IN GAUGING PLANE .054 + .001 .000 (137 + 025 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (.778mm) THEIR TRUE POSITION RELATIVE TO A MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB.OPTDELECTRONICS GaAs INFRARED EMITTING DIODE Storage Temperature . 0... 6. eee een rete ester tenn es 65C to +150C Operating Temperature ....... 20.202 e eet e eet terete tenner ener sees 65C to +125C Soldering: Lead Temperature (Ton) ... . 2.02 eee eee ete teen renee 240C for 5 sec.8458 Lead Temperature (FIOW) 0.6.0... eee eter ete 260C for 10 sec.*** Continuous Forward Current ....0..0.000 0000 c ect ee rrr e renee nee 100 mA Forward Current (pw, 108; 200 Hz) .. 00.66. ener n renee enters css 10A Reverse Voltage ........ 0. cee cece tee reenter ner r eet ener ener r ents errs estes 3 Volts Power Dissipation (T, = 25C) 00... 6. e eee eee eect nett terre cs n ees 170 mW Power Dissipation (To = 25C)... 6 cece cere ee etree ret er ereeereeesseesrsn st 1.3 W? PARAMETER SYMBOL 5 5 5 UNITS TEST CONDITIONS Forward Voltage . Vv lr = 100 mA Reverse Leakage Current pA Va =3V Peak Emission Wavelength nm |p = 100 mA Emission Angle at 12 Power + Degrees Total Power LEDS5B . mw ; = 100 mA Total Power LED55C - mw |; = 100 mA Total Power LEDS6 - mw 1, = 100 mA Rise Time 0-90% of output . us Fall Time 100-10% of output . BS . Derate power dissipation linearly 1.70 mW/C above 25 C ambient. . Derate power dissipation linearly 13.0 MW/C above 25C case. RMA flux is recommended. Methanol or isopranol alcohols are recommended as cleaning agenis. . Soldering iron tip 4e (1.6 mm) minimum from housing. , As long as leads are not under any stress or spring tension. . Total power output, Po, is the total power radiated by the device into a solid angle of 27 steradians. NOMA DNSDPTOELECTAONICS GaAs INFRARED EMITTING DIODE 80 20 12 MN i | PULSED Pw N ' 10 BO~4SEC FORWARD FH e | . Hy current Pa 5 A 5 = LA 3 & 2 & poten a TAN 2 Wo = t-CURRENT z 1H g DM a 8 ity s a v Ht I 06 5 Ht tH 5 = oe 4 NORMALIZED 3 o 7 Tp=100mA z A Tas25*c 04 NK ot & NORMALIZED TO NY Z Tp=100mA o. Tas 25C 0.2 0.02 }+-- Hi 0.01 OO 002 005 OO? oS Ol 02 os 10 2 to -$0 25 Q 25 100 (25 150 Tf~ FORWARD CURRENT - AMPERES Ta-AMBIENT TEMPERATURE C Fig. 1, Power Output vs. Inout Current $T1052 Fig. 2, Power Output vs. Temperature ST1057 10 r 100 $e == 8 a = Zl al a fo 4.0 | 60 of a 0 A ~ ge a 8 L f| f/f) o | o 7 : 2 g J Yo |H% Z 10 Zz = 90 t og 3 z 06 rain 7 Ta 100*C asec =S8C g of & 3 f = a 7 7 _ 02 6 f- i i z o 6 Z d & L L < 2 oat } 5 7 7 ie e / If 4 06 + & / |} oa | , O2 / O15 I 2 3 4 3 6 ? 8 a 10 ' + 0 A Le RF 14 is Ye- FORWARO VOLTAGE -VOLTS Vp~ FORWARD VOLTAGE VOLTS Fig. 3. Forward Voltage vs. Forward Current ST1053 Fig. 4. Forward Voltage vs. Forward Current STt056 100 60 RELATIVE OUTPUT ~ PERCENT 20 [a x 20 10 o 10 20 30 40 50 S-ANGULAR DISPLACEMENT FROM OPTICAL AXIS - DEGREES Fig. 8. Typical Radiation Pattern ST1054 50 40