PD - 9.1505B IRF7316 l l l l l HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -30V RDS(on) = 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Symbol Maximum VDS VGS -30 20 -4.9 -3.9 -30 -2.5 2.0 1.3 140 -2.8 0.20 -5.0 -55 to + 150 ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Units V A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol Limit Units RJA 62.5 C/W 8/12/04 IRF7316 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 -1.0 Typ. 0.022 0.042 0.076 7.7 23 3.8 5.9 13 13 34 32 710 380 180 Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA 0.058 VGS = -10V, ID = -4.9A 0.098 VGS = -4.5V, ID = -3.6A V VDS = VGS, ID = -250A S VDS = -15V, ID = -4.9A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 55C 100 VGS = -20V nA -100 VGS = 20V 34 ID = -4.9A 5.7 nC VDS = -15V 8.9 VGS = -10V, See Fig. 10 19 VDD = -15V 20 ID = -1.0A ns 51 RG = 6.0 48 RD = 15 VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -2.5 -30 A -0.78 -1.0 44 66 42 63 V ns nC Conditions D MOSFET symbol showing the integral reverse G p-n junction diode. S TJ = 25C, IS = -1.7A, VGS = 0V TJ = 25C, IF = -1.7A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 35mH RG = 25, IAS = -2.8A. Surface mounted on FR-4 board, t 10sec. ISD -2.8A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. IRF7316 100 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 -3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 -3.0V 20s PULSE WIDTH TJ = 150C A 1 10 0.1 -VDS, Drain-to-Source Voltage (V) 1 10 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 -ISD , Reverse Drain Current (A) -ID , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP TJ = 25C TJ = 150C 10 V DS = -10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 6.0 A TJ = 150C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 -VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage A 1.4 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS (on) , Drain-to-Source On Resistance () IRF7316 -4.9A ID =-4.9A 1.5 1.0 0.5 0.0 -60 -40 -20 -10V VGS =-10V 0 20 40 60 0.6 0.5 0.4 0.3 0.1 VGS = -10V 0.0 80 100 120 140 160 0 TJ , Junction Temperature( C) 10 20 300 I D = -4.9A 0.04 0.00 3 6 9 12 -VGS , Gate -to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 15 A EAS , Single Pulse Avalanche Energy (mJ) 0.12 0 A Fig 6. Typical On-Resistance Vs. Drain Current 0.16 0.08 30 -ID , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature RDS (on) , Drain-to-Source On Resistance () V GS = -4.5V 0.2 ID -1.3A -2.2A BOTTOM -2.8A TOP 250 200 150 100 50 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) Fig 8. Maximum Avalanche Energy Vs. Drain Current 150 IRF7316 VGS = 0V f = 1 MHz Ciss = Cgs + Cgd + Cds Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1200 1000 20 Ciss 800 Coss 600 400 Crss 200 0 1 ID = -4.9A SHORTED -VGS , Gate-to-Source Voltage (V) 1400 10 100 A VDS =-15V 16 12 8 4 0 0 10 20 30 40 QG , Total Gate Charge (nC) - V DS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7316 SO-8 Package Details D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 0.25 .0098 0.10 .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C A1 8X b 0.25 [.010] A MAX b e1 6X MILLIMETERS MAX A 5 INCHES MIN y 0.10 [.004] 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENS ION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF THE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER IRF7316 SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 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