Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Robotics, Forklifts, Welders
QM100HC-M
•ICCollector current ........................ 100A
•VCEX Collector-emitter voltage ........... 350V
•hFE DC current gain............................. 100
•Non-Insulated Type
53.5
43.3
33
88
5.3
36.5
R6
10.5
φ5.3
14
4.5
4.5
B
E
M5
22
4.5
23.5
B
E
C
LABEL
Feb.1999
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
100/200
—
—
—
—
—
—
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M5
Typical value
Ratings
350
350
400
10
100
100
420
3
1000
–40~+150
–40~+125
—
1.47~1.96
15~20
1.47~1.96
15~20
90
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=350V, VEB=2V
VCB=400V, Emitter open
VEB=10V
IC=100A, IB=1A
–IC=100A (diode forward voltage)
IC=100A, VCE=2V/5V
VCC=200V, IC=100A, IB1=–IB2=2A
Transistor part
Diode part
Conductive grease applied
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.0
2.5
1.5
—
2.0
10
3.0
0.3
0.5
0.15
MITSUBISHI TRANSISTOR MODULES
QM100HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM100HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
3
10
2
10
1
10
0
10
2
10
1
10
0
10
–1
10
1
10
0
10
7
5
4
3
2
7
5
4
3
2
1.0 1.4 1.8 2.2 2.6 3.0
V
CE
=2.0V
T
j
=25°C
0
10
1
10
–1
10
7
5
4
3
2
7
5
4
3
2
23457 23457
T
j
=25°C
T
j
=125°C
I
B
=1A
V
BE(sat)
V
CE(sat)
1
10
–1
10
0
10
1
10
2
10 2
200
160
120
80
40
001 2 3 4 5
T
j
=25°C
I
B
=2.0A
I
B
=1.0A
I
B
=0.5A
I
B
=0.2A
I
B
=0.1A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
2
10
3
10
1
10
0
10
4
10
3
10
2
10
1
10
444
T
j
=25°C
T
j
=125°C
V
CE
=2.0V
V
CE
=5.0V
753275327532
5
4
3
2
1
0
T
j
=25°C
T
j
=125°C
–2
10
–1
10
444
I
C
=50A I
C
=100A
I
C
=70A
I
C
=120A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
I
B1
=–I
B2
=2A
V
CC
=200V
T
j
=25°C
T
j
=125°C
t
s
t
on
t
f
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM100HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
Zth (j–c) (°C/ W)
–1
10
1
10
0
10
–1
10
–2
10
–3
10
3
10
2
10
1
10
0
10
100
80
60
40
20
00 20 60 100 120 16040 80 140
10
30
50
70
90
200
160
120
80
40
00 100 200 300 400 500
I
B2
=–2A
–5A
T
j
=125°C
753275327532
7
5
3
2
7
5
3
2
7
5
3
2T
C
=25°C
2
10
3
10
1
10
0
10
3
10
2
10
1
10
0
10
100µs
444
DC
10ms
1ms
t
w
=50
µs
200µs
1
10
7
5
4
3
2
0
10
7
5
4
3
2
23457 23457
2
t
s
t
f
V
CC
=200V
I
B1
=2A
I
C
=100A
T
j
=25°C
T
j
=125°C
75327532
7
532
0.5
0.4
0.3
0.2
0.1
0
7532
1
10
0
10
0
10
475324
444
7
5
3
2
7
5
3
2
7
5
3
2
0 0.4 0.8 1.2 1.6 2.0
T
j
=25°C
T
j
=125°C
NON–REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
Feb.1999
7543275432
0
200
400
600
800
1000
0
10
1
10
2
10
753275327532
1.0
0.8
0.6
0.4
0.2
0
7532
1
10
0
10
–3
10
444
7
5
4
3
2
7
5
4
3
2
23457 23457
T
j
=25°C
T
j
=125°C
t
rr
I
rr
Q
rr
2
10
1
10
0
10
0
10
1
10
2
10
–1
10
0
10
1
10
I
B1
=–I
B2
=2A
V
CC
=200V
4
10
–2
10
0
10
–1
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM100HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
Zth (j–c) (°C/ W)
trr (µs)
