To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
tm
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
www.fairchildsemi.com
1
FDMS3500 N-Channel Power Trench®MOSFET
FDMS3500
N-Channel Power Trench® MOSFET
75V, 49A, 14.5m:
Features
Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A
Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A
Advanced Package and Silicon combination for low rDS(on)
MSL1 robust package design
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC - DC Conversion
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 75 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous (Package limited) TC= 25°C 49
A
-Continuous (Silicon limited) TC= 25°C 57
-Continuous TA= 25°C (Note 1a) 9.2
-Pulsed 100
EAS Single Pulse Avalanche Energy (Note 3) 384 mJ
PD
Power Dissipation TC = 25°C 96 W
Power Dissipation TA = 25°C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RTJC Thermal Resistance, Junction to Case 1.3 °C/W
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS3500 FDMS3500 Power 56 13’’ 12mm 3000 units
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Bottom
Power 56
Top
Pin 1
G
SSS
D
DDD
October 2014
FDMS3500 N-Channel Power Trench®MOSFET
www.fairchildsemi.com
2
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
Electrical Characteristics TJ = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 75 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient ID = 250PA, referenced to 25°C 71 mV/°C
IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 60V, 1 PA
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 1.0 1.8 3.0 V
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250PA, referenced to 25°C -6.8 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = 10V, ID = 11.5A 11.1 14.5
m:VGS = 4.5V, ID = 10A 12.8 16.3
VGS = 10V, ID = 11.5A, TJ = 125°C 17.6 23.0
gFS Forward Transconductance VDD = 5V, ID = 11.5A 56 S
Ciss Input Capacitance VDS = 40V, VGS = 0V,
f = 1MHz
3580 4765 pF
Coss Output Capacitance 225 300 pF
Crss Reverse Transfer Capacitance 120 175 pF
RgGate Resistance f = 1MHz 1.2 :
td(on) Turn-On Delay Time
VDD = 40V, ID = 11.5A,
VGS = 10V, RGEN = 6:
16 29 ns
trRise Time 918ns
td(off) Turn-Off Delay Time 48 77 ns
tfFall Time 611ns
QgTotal Gate Charge VGS = 0 V t o 1 0 V
VDD = 40V,
ID = 11.5A
65 91 nC
QgTotal Gate Charge VGS = 0V to 5V 34 48 nC
Qgs Gate to Source Charge 9.9 nC
Qgd Gate to Drain “Miller” Charge 11.6 nC
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS= 11.5A (Note 2) 0.8 1.3 V
VGS = 0V, IS= 2.1A (Note 2) 0.7 1.2
trr Reverse Recovery Time IF = 11.5A, di/dt = 100A/Ps38 60 ns
Qrr Reverse Recovery Charge 45 72 nC
NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3mH, IAS = 16A, VDD = 75V, VGS = 10V
a. 50°C/W when mounted on a
1 in2pad of 2 oz copper.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
FDMS3500 N-Channel Power Trench®MOSFET
www.fairchildsemi.com
3
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
F ig ur e 4 . O n -R es is ta n c e v s G at e t o
Source Voltage
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
0123
0
20
40
60
80
100
VGS = 4.5V VGS = 3.5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = 4V
VGS = 3V
VGS = 10V
ID,DRAIN CURRENT (A)
VDS,DRAIN TO SOURCE VOLTAGE (V)
020406080100
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 10V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID,DRAIN CURRENT(A)
VGS = 4V
VGS = 3.5V
VGS = 3V
VGS =4.5V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 11.5A
VGS = 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ,JUNCTION TEMPERATURE (oC)
246810
0
10
20
30
40
ID= 11.5A
TJ= 25oC
TJ= 125oC
VGS,GATE TO SOURCE VOLTAGE (V)
rDS(on),DRAIN TO
SOURCE ON-RESISTANCE (m:)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
012345
0
20
40
60
80
100
VDS = 5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ= 150oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55oC
TJ = 25oC
TJ= 150oC
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
FDMS3500 N-Channel Power Trench®MOSFET
www.fairchildsemi.com
4
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
F i g u r e 9 . U n c l a m p e d I n d u c t i v e
Switching Capability
F i g u r e 1 0 . M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 11. Fo r w ar d B i a s S afe
Operating Area
F i g u r e 1 2 . S i n g le P u l s e M a x i m u m
Power Dissipation
Typical Characteristics TJ = 25°C unless otherwise noted
0 10203040506070
0
2
4
6
8
10
ID= 11.5A
VDD = 30V VDD = 50V
VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = 40V
0.1 1 10
100
1000
10000
75
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
30
0.01 0.1 1 10 100
1
10
400
TJ= 25oC
TJ= 125oC
tAV, TIME IN AVALANCHE(ms)
IAS, AVALANCHE CURRENT(A)
20
25 50 75 100 125 150
0
10
20
30
40
50
60
VGS = 4.5V
RTJC = 1.3oC/W
VGS = 10V
ID,DRAIN CURRENT (A)
TC,CASE TEMPERATURE (oC)
Limited by Package
0.01 0.1 1 10 100 300
0.01
0.1
1
10
100
400
DC
10s
1s
100ms
10ms
1ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ= MAX RATED
RTJA = 125oC/W
TA= 25oC
10-3 10-2 10-1 110
100 1000
1
10
100
1000
SINGLE PULSE
RTJA = 125oC/W
TA= 25oC
0.5
VGS = 10V
P(PK),PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
FDMS3500 N-Channel Power Trench®MOSFET
www.fairchildsemi.com
5
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
Figure 13. Transient Thermal Response Curve
Typical Characteristics TJ = 25°C unless otherwise noted
10-3 10-2 10-1 110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
RTJA = 125oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZTJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
