www.irf.com 1
09/21/04
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
IRF7493PbF
HEXFET® Power MOSFET
Notes through are on page 9
PD - 95289
lHigh frequency DC-DC converters
lLead-Free
Benefits
Applications
lLow Gate-to-Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
VDSS RDS(on) max Qg (typ
.)
80V 15m
:
@VGS=10V 35nC
Absolut e Maximum Rati ngs
Parameter Units
VDS Dr ain-t o-Source Vo ltage V
VGS Gat e- to-S ource Voltage
ID @ TC = 25 °C Co ntin uous Dr ain Cur rent , VGS @ 10V
ID @ TC = 70 °C
Co ntin uous Dr ain Cur rent , V
GS
@ 10V
A
IDM
Pulsed Dr ain Cur r ent
c
PD @TC = 25°C
Maximum Power D issi pation
f
W
PD @TC = 70°C
Maximum Power D issi pation
f
Linear Derating F actor W/°C
TJ Operating Junction and °C
TSTG Sto r ag e Temperature Ra ng e
Thermal Resist ance
Parameter Typ. Max. Units
RθJC Junction-to-Lead ––– 20
RθJA
Junction-to-Ambient
f
––– 50
Max.
9.3
7.4
74
± 20
80
-55 to + 150
2.5
0.02
1.6
IRF7493PbF
2www.irf.com
Sta t ic @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS Drain-t o-Source Breakdown V oltage 80 ––– ––– V
∆Β
V
DSS
/
∆
T
J B reak do w n Volt age Te m p. Coeffi cie nt ––– 0. 074 ––– mV/°C
R
DS(on) Static Drai n-to- Source On-Resistanc e ––– 1 1.5 15
m
Ω
V
GS(th) Gate Threshold Volt age 2.0 ––– 4 .0 V
I
DSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to- Sour ce Reverse Leakage ––– ––– -200
Dynamic @ T
J
= 25°C (unless otherwise specified)
gf s F orw a r d Trans c o nduc t anc e 13 – –– ––– S
Q
gTotal Gate Charge ––– 35 53
Q
gs Gate-to-Source Charge ––– 5.7 –––
Q
gd Ga t e - to-D rain Charge ––– 12 –––
t
d(on) T urn-On Delay Time ––– 8. 3 –––
t
rRise Time ––– 7.5 –––
t
d(off) Turn-Off Delay Time – –– 30 ––– ns
t
fFall Time –––12–––
C
iss Input Capacitance ––– 1510 –––
C
oss Output Capacitance ––– 320 ––– pF
C
rss R everse Tra nsfer Capacitance ––– 130 –– –
C
oss Output Capacitance ––– 1130 –––
C
oss O utput Capacitance ––– 210 –––
C
rss
eff.
Effecti v e O utput Capaci tance ––– 320 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pul se Avalanche En ergy
d
mJ
I
AR
Avalanche Current
c
A
Diode Characteristics
Parameter Min . Typ. Max. Un its
I
SCo ntin uous Sourc e Cur rent ––– ––– 9.3
(Body Diode) A
I
SM Pulsed Source Current ––– ––– 74
(Body Diode)
c
V
SD Diode Forward Voltage ––– ––– 1.3 V
t
rr Reve r se Recovery Time ––– 37 56 ns
Q
rr Reverse Recovery C harge ––– 52 78 nC
RG = 6.2Ω
Conditions
VGS = 10V
Max.
180
5.6
VGS = 0V, VDS = 0V to 64V
g
Conditions
VGS = 0V, ID = 250µA
Reference to 2 5 °C, ID = 1mA
VGS = 10V, ID = 5.6A
e
TJ = 25°C, IF = 5.6A, VDD = 15V
di /dt = 10 0A/µ s
e
TJ = 25°C, IS = 5. 6A, VGS = 0V
e
showing the
integra l revers e
p-n junction diode.
Typ.
–––
–––
VGS = 10V
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 1.0V, ƒ = 1. 0M H z
VGS = 0V, VDS = 64V, ƒ = 1.0M Hz
VDD = 40V,
e
ID = 5.6A
MOSFET symbol
VDS = VGS, ID = 250µ A
VDS = 80V , V GS = 0V
VDS = 64V , V GS = 0V, T J = 12 5° C
ƒ = 1. 0M Hz
VDS = 15V , I D = 5.6A
VDS = 40V
VGS = 20V
VGS = -20V
ID = 5.6A
IRF7493PbF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
0.1 110 100
VDS, Dr ain-to-Source V oltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
3.5V
20µs PU LSE WID TH
Tj = 25°C
0.1 110 100
VDS, Dr ain-to-Source V oltage (V )
0.1
1
10
100
ID, Drain-to-Source Current (A)
3.5V
20µs PU LSE WID TH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
5.5V
5.0V
4.5V
4.0V
BOTTOM 3.5V
VGS
TOP 15V
10V
8.0V
5.5V
5.0V
4.5V
4.0V
BOTTOM 3.5V
3.0 4.0 5.0 6.0
VGS, Gate-t o-Sour ce Voltage (V)
0.10
1.00
10.00
100.00
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 150°C
VDS = 25V
20µs PU LSE WID TH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 9. 3A
VGS = 10V
IRF7493PbF
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
110 100
VDS, Dr ain-to-Source V oltage (V)
10
100
1000
10000
100000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + C gd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 102030405060
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 64V
VDS= 40V
VDS= 16V
ID= 5.6A
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-toD rain Voltage (V )
0.1
1.0
10.0
100.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0 1 10 100 1000
VDS , D rain- toSource Vol tage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
IRF7493PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
25 50 75 100 125 150
TC , Case Temperature (°C)
0
2
4
6
8
10
ID , Drain Current (A)
1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rect angular P ulse Duration (sec)
0.01
0.1
1
10
100
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
IRF7493PbF
6www.irf.com
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
4.0 8.0 12.0 16.0
VGS, Gate -to -S ource Voltage ( V)
0.010
0.020
0.030
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 5.6A
25 50 75 100 125 150
Start ing TJ, Junction Temperature (°C)
0
100
200
300
400
500
EAS, Single Pulse Avalanche Energy (mJ)
ID
TOP 2.5A
4.5A
BOTTOM 5.6A
0 20406080
ID , Dr ain Current (A )
0.011
0.012
0.013
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = 10V
IRF7493PbF
www.irf.com 7
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 17. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
IRF7493PbF
8www.irf.com
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 4 5°
8X L 8X c
y
0.25 [.010] CAB
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUT LINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LEN GTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070
]
DATE CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
P = DE S IGNAT ES LEAD-FRE E
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
IRF7493PbF
www.irf.com 9
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 12mH
RG = 25Ω, IAS = 5.6A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while V DS is rising from 0 to 80% VDSS
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. O U TLIN E C O NFORMS TO EIA-481 & EIA -541.
FEED DIRECTION
TE RM I NAL NU MBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLI METERS(INCHES).
3
. OUTLI NE CONFORM S T O EIA -481 & EIA -541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
