GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions Maximum Ratings VDSS TJ = 25C to 150C 85 V 20 V 103 77 68 A A A tbd tbd tbd A A A ID25 ID90 ID110 TC = 25C TC = 90C TC = 110C IF25 IF90 IF110 TC = 25C (diode) TC = 90C (diode) TC = 110C (diode) Symbol Conditions iv VGS Characteristic Values t (TJ = 25C, unless otherwise specified) min. VGS(th) VDS = 20 V; ID = 250 A IDSS VDS = VDSS; VGS = 0 V IGSS VGS = 20 V; VDS = 0 V mW mW 4.0 V 5 A A 0.2 A 2.0 TJ = 25C TJ = 125C 1) 100 VGS = 10 V; VDS = 42 V; ID = 75 A 114 30 35 nC nC nC tbd tbd tbd tbd ns ns ns ns tbd tbd tbd mJ mJ mJ inductive load VGS = 10 V; VDS = 42 V ID = 75 A; RG = 39 ; TJ = 125C with heat transfer paste (IXYS test setup) t RthJC RthJH 6.2 n Eon Eoff Erecoff 5.5 12.7 e td(on) tr td(off) tf TJ = 25C TJ = 125C max. a on chip level at VGS = 10 V; ID = 75 A typ. t RDSon 1) Qg Qgs Qgd AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment e Symbol 1.3 1.0 1.6 Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings Package options * 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W VDS = ID*(RDS(on) + RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307 1-3 GWM100-0085X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.2 VSD (diode) IF = 100 A; VGS = 0 V 0.9 trr QRM IRM IF = 100 A; -diF/dt = 800 A/s; VR = 24 V TVJ = 125C tbd tbd tbd V ns C A Component Conditions Maximum Ratings IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections TJ Tstg VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions -55...+175 -55...+125 C C 1000 V~ 50 - 250 N typ. max. 1.0 mW 160 pF 25 g iv Rpin to chip 1) L+ to L1/L2/L3 or L- to L1/L2/L3 coupling capacity between shorted pins and mounting tab in the case Weight VDS = ID*(RDS(on) + RPin to Chip) t e n t a t 1) A Characteristic Values min. CP 300 e Symbol IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307 2-3 GWM100-0085X1 Straight Leads GWM 100-0085X1-SL 37,5 +0,20 5 0,05 (11x) 3 0,05 1,5 1 0,05 0,5 0,02 1 0,05 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 L2 L1 L- 25 +0,20 53 0,15 L3 L+ 2,1 4,5 12 0,05 e 4 0,05 (3x) 6 0,05 37,5 +0,20 5 0,05 (11x) 3 0,05 1,5 iv Surface Mount Device GWM 100-0085X1-SMD 1 0,05 0,5 0,02 t R1 0,2 t e 4,5 Ordering Straight Standard SMD Standard t Leads L1 L- L+ 2,1 n L2 25 +0,20 L3 39 0,15 a S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 1 0,05 12 0,05 5 0,10 4 0,05 5 2 (3x) 6 0,05 Part Name & Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering Code GWM 100-0085X1 - SL GWM 100-0085X1 Blister 28 tbd GWM 100-0085X1 - SMD GWM 100-0085X1 Blister 28 tbd IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307 3-3