© 2011 IXYS All rights reserved 1 - 3
20110307
GWM100-0085X1
IXYS reserves the right to change limits, test conditions and dimensions.
t e n t a t i v e
VDSS = 85 V
ID25 = 103 A
RDSon typ. = 5.5 mW
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
S2
L-
L1
L2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L+
MOSFETs
Symbol Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 85 V
VGS ± 20 V
ID25
ID90
ID110
TC = 25°C
TC = 90°C
TC = 110°C
103
77
68
A
A
A
IF25
IF90
IF110
TC = 25°C (diode)
TC = 90°C (diode)
TC = 110°C (diode)
tbd
tbd
tbd
A
A
A
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon 1) on chip level at TJ = 25°C
VGS = 10 V ; ID = 75 A TJ = 125°C
5.5
12.7
6.2 mW
mW
VGS(th) VDS = 20 V; ID = 250 µA 2.0 4.0 V
IDSS VDS = VDSS; VGS = 0 V TJ = 25°C
TJ = 125°C 100
5 µA
µA
IGSS VGS = ± 20 V; VDS = 0 V 0.2 µA
Qg
Qgs
Qgd
VGS = 10 V; VDS = 42 V; ID = 75 A
114
30
35
nC
nC
nC
td(on)
tr
td(off)
tf
inductive load
VGS = 10 V; VDS = 42 V
ID = 75 A; RG = 39 Ω;
TJ = 125°C
tbd
tbd
tbd
tbd
ns
ns
ns
ns
Eon
Eoff
Erecoff
tbd
tbd
tbd
mJ
mJ
mJ
RthJC
RthJH with heat transfer paste (IXYS test setup) 1.3
1.0
1.6
K/W
K/W
1) VDS = ID·(RDS(on) + RPin to Chip)
Surface Mount DeviceStraight leads
© 2011 IXYS All rights reserved 2 - 3
20110307
GWM100-0085X1
IXYS reserves the right to change limits, test conditions and dimensions.
t e n t a t i v e
Component
Symbol Conditions Maximum Ratings
IRMS per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
300 A
TJ
Tstg
-55...+175
-55...+125
°C
°C
VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute 1000 V~
FCmounting force with clip 50 - 250 N
Symbol Conditions Characteristic Values
min. typ. max.
Rpin to chip 1) L+ to L1/L2/L3 or L- to L1/L2/L3 1.0 mW
CPcoupling capacity between shorted
pins and mounting tab in the case
160 pF
Weight 25 g
1) VDS = ID·(RDS(on) + RPin to Chip)
Source-Drain Diode
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD (diode) IF = 100 A; VGS = 0 V 0.9 1.2 V
trr
QRM
IRM
IF = 100 A; -diF/dt = 800 A/µs; VR = 24 V
TVJ = 125°C
tbd
tbd
tbd
ns
µC
A
© 2011 IXYS All rights reserved 3 - 3
20110307
GWM100-0085X1
IXYS reserves the right to change limits, test conditions and dimensions.
t e n t a t i v e
Leads Ordering Part Name &
Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering
Code
Straight Standard GWM 100-0085X1 - SL GWM 100-0085X1 Blister 28 tbd
SMD Standard GWM 100-0085X1 - SMD GWM 100-0085X1 Blister 28 tbd
Straight Leads GWM 100-0085X1-SL
1 ±0,05
5 ±0,05
0,5 ±0,02
25 +0,20
53 ±0,15
37,5 +0,20
1 ±0,05
(11x) 3 ±0,05
4 ±0,05
(3x) 6 ±0,05
12 ±0,05
1,5
4,5
2,1
Surface Mount Device GWM 100-0085X1-SMD
25 +0,20
5 ±0,05
39 ±0,15
4 ±0,05
1 ±0,05
R1 ±0,2
0,5 ±0,02
5° ±2°
1 ±0,05
5 ±0,10
(3x) 6 ±0,05
12 ±0,05
(11x) 3 ±0,05
37,5 +0,20
1,5
4,5
2,1
G1S1G2S2G3S3G4S4G5S5G6S6
L+L-L1L2L3
G1S1G2S2G3S3G4S4G5S5G6S6
L+L-L1L2L3
