LT5568 700MHz - 1050MHz High Linearity Direct Quadrature Modulator DESCRIPTIO U FEATURES The LT(R)5568 is a direct I/Q modulator designed for high performance wireless applications, including wireless infrastructure. It allows direct modulation of an RF signal using differential baseband I and Q signals. It supports PHS, GSM, EDGE, TD-SCDMA, CDMA, CDMA2000, WCDMA, and other systems. It may also be configured as an image reject upconverting mixer, by applying 90 phase-shifted signals to the I and Q inputs. The I/Q baseband inputs consist of voltage-to-current converters that in turn drive double-balanced mixers. The outputs of these mixers are summed and applied to an on-chip RF transformer, which converts the differential mixer signals to a 50 single-ended output. The four balanced I and Q baseband input ports are intended for DC coupling from a source with a common mode voltage level of about 0.5V. The LO path consists of an LO buffer with single-ended input, and precision quadrature generators that produce the LO drive for the mixers. The supply voltage range is 4.5V to 5.25V. Frequency Range: 700MHz to 1050MHz High OIP3: +22.9dBm at 850MHz Low Output Noise Floor at 5MHz Offset: No RF: -160.3dBm/Hz POUT = 4dBm: -154dBm/Hz 3-Ch CDMA2000 ACPR: -71.4dBc at 850MHz Integrated LO Buffer and LO Quadrature Phase Generator 50 AC-Coupled Single-Ended LO and RF Ports 50 DC Interface to Baseband Inputs Low Carrier Leakage: -43dBm at 850MHz High Image Rejection: -46dBc at 850MHz 16-Lead 4mm x 4mm QFN Package U APPLICATIO S Infrastructure Tx for Cellular Bands Image Reject Up-Converters for Cellular Bands Low-Noise Variable Phase-Shifter for 700MHz to 1050MHz Local Oscillator Signals RFID Reader , LTC and LT are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. U TYPICAL APPLICATIO CDMA2000 ACPR, AltCPR and Noise vs RF Output Power at 850MHz for 1 and 3 Carriers 700MHz to 1050MHz Direct Conversion Transmitter Application LT5568 V-I I-CHANNEL PA 0 EN 90 Q-CHANNEL Q-DAC BALUN V-I DOWNLINK TEST MODEL 64 DPCH 1-CH. ACPR -125 -135 -60 3-CH. ACPR -70 3-CH. AltCPR 1-CH. AltCPR -80 -145 -155 NOISE FLOOR AT 30MHz OFFSET (dBm/Hz) I-DAC -50 5V 100nF x2 RF = 700MHz TO 1050MHz ACPR, AltCPR (dBc) VCC 3-CH. NOISE BASEBAND GENERATOR 5568 TA01 VCO/SYNTHESIZER -90 -30 1-CH. NOISE -165 -25 -15 -10 -5 -20 RF OUTPUT POWER PER CARRIER (dBm) 5568 TA02 5568f 1 LT5568 U W W W ABSOLUTE AXI U RATI GS U W U PACKAGE/ORDER I FOR ATIO (Note 1) VCC GND BBMI BBPI TOP VIEW Supply Voltage .........................................................5.5V Common Mode Level of BBPI, BBMI and BBPQ, BBMQ .......................................................2.5V Operating Ambient Temperature (Note 2) ............................................... -40C to 85C Storage Temperature Range................... -65C to 125C Voltage on any Pin Not to Exceed...................... -500mV to VCC + 500mV 16 15 14 13 EN 1 12 GND GND 2 11 RF 17 LO 3 10 GND GND 4 6 7 8 BBMQ GND BBPQ VCC 9 5 GND UF PACKAGE 16-LEAD (4mm x 4mm) PLASTIC QFN TJMAX = 125C, JA = 37C/W EXPOSED PAD (PIN 17) IS GROUND, MUST BE SOLDERED TO PCB ORDER PART NUMBER UF PART MARKING LT5568EUF 5568 Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/ Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS VCC = 5V, EN = High, TA = 25C, fLO = 850MHz, fRF = 852MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.54VDC, Baseband Input Frequency = 2MHz, I&Q 90 shifted (upper side-band selection). PRF, OUT = -10dBm, unless otherwise noted. (Note 3) SYMBOL PARAMETER CONDITIONS fRF RF Frequency Range RF Frequency Range -3dB Bandwidth -1dB Bandwidth S22, ON RF Output Return Loss EN = High (Note 6) MIN TYP MAX UNITS RF Output (RF) 0.6 to 1.2 0.7 to 1.05 GHz GHz -14 dB S22, OFF RF Output Return Loss EN = Low (Note 6) NFloor RF Output Noise Floor No Input Signal (Note 8) POUT = 4dBm (Note 9) POUT = 4dBm (Note 10) -12 dB GP Conversion Power Gain POUT/PIN, I&Q GV Conversion Voltage Gain 20 * Log (VOUT, 50/VIN, DIFF, I or Q) -6.8 dB POUT Absolute Output Power 1VP-P DIFF CW Signal, I and Q -2.8 dBm G3LO vs LO 3 * LO Conversion Gain Difference (Note 17) -23 dB OP1dB Output 1dB Compression (Note 7) 8.3 dBm OIP2 Output 2nd Order Intercept (Notes 13, 14) 63 dBm OIP3 Output 3rd Order Intercept (Notes 13, 15) 22.9 dBm -160.3 -154 -154 -9 -6.8 dBm/Hz dBm/Hz dBm/Hz -3 dB IR Image Rejection (Note 16) -46 dBc LOFT Carrier Leakage (LO Feedthrough) EN = High, PLO = 0dBm (Note 16) EN = Low, PLO = 0dBm (Note 16) -43 -65 dBm dBm 5568f 2 LT5568 ELECTRICAL CHARACTERISTICS VCC = 5V, EN = High, TA = 25C, fLO = 850MHz, fRF = 852MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.54VDC, Baseband Input Frequency = 2MHz, I&Q 90 shifted (upper side-band selection). PRF, OUT = -10dBm, unless otherwise noted. (Note 3) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS LO Input (LO) fLO LO Frequency Range PLO LO Input Power 0.6 to 1.2 S11, ON LO Input Return Loss EN = High (Note 6) -11.4 dB S11, OFF LO Input Return Loss EN = Low (Note 6) -2.7 dB NFLO LO Input Referred Noise Figure (Note 5) at 850MHz 12.7 dB GLO LO to RF Small Signal Gain (Note 5) at 850MHz 23.8 dB IIP3LO LO Input 3rd Order Intercept (Note 5) at 850MHz -11.5 dBm -10 0 GHz 5 dBm Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ) BWBB Baseband Bandwidth -3dB Bandwidth 380 MHz VCMBB DC Common Mode Voltage (Note 4) 0.54 V RIN, SE Single-Ended Input Resistance (Note 4) 48 PLO2BB Carrier Feedthrough on BB POUT = 0 (Note 4) -38 dBm IP1dB Input 1dB Compression Point Differential Peak-to-Peak (Notes 7, 18) 4.3 VP-P, DIFF GI/Q I/Q Absolute Gain Imbalance 0.07 dB I/Q I/Q Absolute Phase Imbalance 0.45 Deg Power Supply (VCC) VCC Supply Voltage 4.5 5 5.25 V ICC, ON Supply Current EN = High 80 117 165 mA ICC, OFF Supply Current, Sleep Mode EN = 0V 50 A tON Turn-On Time EN = Low to High (Note 11) 0.3 s tOFF Turn-Off Time EN = High to Low (Note 12) 1.4 s 230 V A Enable (EN), Low = Off, High = On Enable Sleep Input High Voltage Input High Current EN = High EN = 5V Input Low Voltage Input Low Current EN = Low EN = 0V Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: Tests are performed as shown in the configuration of Figure 7. Note 4: On each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ. Note 5: V(BBPI) - V(BBMI) = 1VDC, V(BBPQ) - V(BBMQ) = 1VDC. Note 6: Maximum value within -1dB bandwidth. Note 7: An external coupling capacitor is used in the RF output line. Note 8: At 20MHz offset from the LO signal frequency. Note 9: At 20MHz offset from the CW signal frequency. 1.0 0.5 0 V A Note 10: At 5MHz offset from the CW signal frequency. Note 11: RF power is within 10% of final value. Note 12: RF power is at least 30dB lower than in the ON state. Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set in such a way that the two resulting RF tones are -10dBm each. Note 14: IM2 measured at LO frequency + 4.1MHz. Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency + 2.2MHz. Note 16: Amplitude average of the characterization data set without image or LO feedthrough nulling (unadjusted). Note 17: The difference in conversion gain between the spurious signal at f = 3 * LO - BB versus the conversion gain at the desired signal at f = LO + BB for BB = 2MHz and LO = 850MHz. Note 18: The input voltage corresponding to the output P1dB. 5568f 3 LT5568 U W TYPICAL PERFOR A CE CHARACTERISTICS VCC = 5V, EN = High, TA = 25C, fLO = 850MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.54VDC, Baseband Input Frequency fBB = 2MHz, I&Q 90 shifted. fRF = fBB + fLO (upper sideband selection). PRF, OUT = -10dBm (-10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) RF Output Power vs LO Frequency at 1VP-P Differential Baseband Drive Supply Current vs Supply Voltage 85C 120 25C 110 -40C 100 4.5 5 SUPPLY VOLTAGE (V) -4 -2 -6 -4 -6 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -8 -10 550 5.5 Voltage Gain vs LO Frequency 0 VOLTAGE GAIN (dB) 130 RF OUTPUT POWER (dBm) SUPPLY CURRENT (mA) 140 650 -8 -10 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -12 -14 550 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5568 G02 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5568 G03 5568 G01 Output IP3 vs LO Frequency 26 70 fBB, 1 = 2MHz fBB, 2 = 2.1MHz 22 20 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 18 16 550 650 8 OP1dB (dBm) 65 OIP2 (dBm) OIP3 (dBm) 10 fIM2 = fBB, 1 + fBB, 2 + fLO fBB, 1 = 2MHz fBB, 2 = 2.1MHz 24 60 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 55 50 550 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 650 5568 G04 -42 -45 P(2 * LO) (dBm) -40 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -46 -48 550 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5568 G07 2 550 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5568 G05 2 * LO Leakage to RF Output vs 2 * LO Frequency -40 -44 6 -45 -50 -55 -55 -60 1.3 1.5 1.7 1.9 2.1 2.3 2 * LO FREQUENCY (GHz) 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5568 G06 -40 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 1.1 650 3 * LO Leakage to RF Output vs 3 * LO Frequency -50 -60 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 4 P(3 * LO) (dBm) LO Feedthrough to RF Output vs LO Frequency LOFT (dBm) Output 1dB Compression vs LO Frequency Output IP2 vs LO Frequency 2.5 5568 G08 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -65 1.65 1.95 2.25 2.55 2.85 3.15 3.45 3.75 3 * LO FREQUENCY (GHz) 5568 G09 5568f 4 LT5568 U W TYPICAL PERFOR A CE CHARACTERISTICS VCC = 5V, EN = High, TA = 25C, fLO = 850MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.54VDC, Baseband Input Frequency fBB = 2MHz, I&Q 90 shifted. fRF = fBB + fLO (upper sideband selection). PRF, OUT = -10dBm (-10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) Noise Floor vs RF Frequency -162 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -164 550 650 -35 -40 650 5568 G10 Absolute I/Q Gain Imbalance vs LO Frequency ABSOLUTE I/Q PHASE IMBALANCE (DEG) 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5568 G13 3 750 850 950 1050 1150 1250 RF FREQUENCY (MHz) 5568 G12 -6 2 -8 -10 -12 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 1 -14 0 550 650 -16 -20 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5568 G14 -16 -12 -8 -4 0 4 LO INPUT POWER (dBm) 10 -10 -30 21 19 fBB, 1 = 2MHz fBB, 2 = 2.1MHz -16 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -12 -8 -4 0 4 LO INPUT POWER (dBm) 8 5568 G16 RF -40C 85C 25C 0 -40C 25C 85C -40 HD3 HD2 -60 -20 25C -50 -10 -30 -40C -40 85C -70 -80 RF CW OUTPUT POWER (dBm) -20 23 15 8 5568 G15 RF CW Output Power, HD2 and HD3 vs CW Baseband Voltage and Temperature 25 13 -20 RF PORT, EN = HIGH, PLO = 0dBm 650 Voltage Gain vs LO Power 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C Output IP3 vs LO Power 17 RF PORT, EN = HIGH, No LO -4 HD2, HD3 (dBc) 650 0IP3 (dBm) ABSOLUTE I/Q GAIN IMBALANCE (dB) 0.1 RF PORT, EN = LOW -40 550 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5568 G11 4 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 0 550 -20 Absolute I/Q Phase Imbalance vs LO Frequency 0.2 LO PORT, EN = HIGH, PLO = 0dBm LO PORT, -30 EN = HIGH, PLO = -10dBm -45 -50 550 750 850 950 1050 1150 1250 RF FREQUENCY (MHz) LO PORT, EN = LOW -10 VOLTAGE GAIN (dB) -163 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C S11 (dB) -161 0 -30 fLO = 850MHz (FIXED) IMAGE REJECTION (dBc) NOISE FLOOR (dBm/Hz) -160 LO and RF Port Return Loss vs RF Frequency Image Rejection vs LO Frequency -50 0 1 2 3 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) -60 HD2 = MAX POWER AT fLO + 2 * fBB OR fLO - 2 * fBB HD3 = MAX POWER AT fLO + 3 * fBB OR fLO - 3 * fBB 5568 G17 5568f 5 LT5568 U W TYPICAL PERFOR A CE CHARACTERISTICS VCC = 5V, EN = High, TA = 25C, fLO = 850MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.54VDC, Baseband Input Frequency fBB = 2MHz, I&Q 90 shifted. fRF = fBB + fLO (upper sideband selection). PRF, OUT = -10dBm (-10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) RF CW Output Power, HD2 and HD3 vs CW Baseband Voltage and Supply Voltage LO Feedthrough to RF Output vs CW Baseband Voltage 10 5V 4.5V HD2, HD3 (dBc) -30 -10 HD3 -20 -40 -50 -30 5V 4.5V HD2 -60 -40 5.5V -70 -80 RF CW OUTPUT POWER (dBm) 0 -35 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -38 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -40 IR (dBc) RF -20 -36 LOFT (dBm) -10 Image Rejection vs CW Baseband Voltage -40 -42 -45 -50 -50 0 -60 1 2 3 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) -44 0 -55 1 2 3 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) HD2 = MAX POWER AT fLO + 2 * fBB OR fLO - 2 * fBB HD3 = MAX POWER AT fLO + 3 * fBB OR fLO - 3 * fBB 0 1 2 3 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) 5568 G19 5568 G20 5568 G18 RF Two-Tone Power (Each Tone), IM2 and IM3 vs Baseband Voltage and Supply Voltage RF Two-Tone Power (Each Tone), IM2 and IM3 vs Baseband Voltage and Temperature -20 -40C 25C 25C -30 85C -40 IM3 -40C IM2 -60 -70 85C fBBI = 2MHz, 2.1MHz, 0 fBBQ = 2MHz, 2.1MHz, 90 -80 5568 G21 -50 25C 5V, 5.5V -20 -30 5V, 5.5V IM3 -40 5V -50 4.5V IM2 -60 5.5V 1 10 0.1 I AND Q BASEBAND VOLTAGE (VP-P, DIFF, EACH TONE) IM2 = POWER AT fLO + 4.1MHz IM3 = MAX POWER AT fLO + 1.9MHz OR fLO + 2.2MHz Noise Floor Distribution fNOISE = 870MHz -40C 25C 85C 0 30 20 PLO = -10dBm NO BASEBAND APPLIED 20 10 -159.2 5568 G24 0 -8 -7.5 -6.5 -7 GAIN (dB) -6 5568 G23 Image Rejection Distribution -40C 25C 85C 40 VBB = 800mVP-P,DIFF 30 20 10 10 6 20 50 PERCENTAGE (%) PERCENTAGE (%) PERCENTAGE (%) 40 -160 -159.6 -160.4 NOISE FLOOR (dBm/Hz) 30 LO Leakage Distribution 40 30 0 -160.8 40 10 fBBI = 2MHz, 2.1MHz, 0 fBBQ = 2MHz, 2.1MHz, 90 -80 60 50 4.5V -70 1 10 0.1 I AND Q BASEBAND VOLTAGE (VP-P, DIFF, EACH TONE) IM2 = POWER AT fLO + 4.1MHz IM3 = MAX POWER AT fLO + 1.9MHz OR fLO + 2.2MHz -40C 25C 85C 50 4.5V -10 PERCENTAGE (%) 85C -10 -40C 25C 85C RF 0 PRF,TONE (dBm), IM2, IM3 (dBc) -40C 60 5568 G22 RF 0 PRF,TONE (dBm), IM2, IM3 (dBc) Gain Distribution 10 10 -54 -50 -46 -42 -38 LO LEAKAGE (dBm) -34 5568 G25 0 < -60 -52 -48 -56 IMAGE REJECTION (dBc) -44 5568 G26 5568f LT5568 U U U PI FU CTIO S EN (Pin 1): Enable Input. When the enable pin voltage is higher than 1V, the IC is turned on. When the input voltage is less than 0.5V, the IC is turned off. BBPQ, BBMQ (Pins 7, 5): Baseband Inputs for the Q-channel, each 50 input impedance. Internally biased at about 0.54V. Applied voltage must stay below 2.5V. GND (Pins 2, 4, 6, 9, 10, 12, 15): Ground. Pins 6, 9, 15 and 17 (exposed pad) are connected to each other internally. Pins 2 and 4 are connected to each other internally and function as the ground return for the LO signal. Pins 10 and 12 are connected to each other internally and function as the ground return for the on-chip RF balun. For best RF performance, pins 2, 4, 6, 9, 10, 12, 15 and the Exposed Pad 17 should be connected to the printed circuit board ground plane. VCC (Pins 8, 13): Power Supply. Pins 8 and 13 are connected to each other internally. It is recommended to use 0.1F capacitors for decoupling to ground on each of these pins. LO (Pin 3): LO Input. The LO input is an AC-coupled singleended input with approximately 50 input impedance at RF frequencies. Externally applied DC voltage should be within the range -0.5V to VCC + 0.5V in order to avoid turning on ESD protection diodes. RF (Pin 11): RF Output. The RF output is an AC-coupled single-ended output with approximately 50 output impedance at RF frequencies. Externally applied DC voltage should be within the range -0.5V to VCC + 0.5V in order to avoid turning on ESD protection diodes. BBPI, BBMI (Pins 14, 16): Baseband Inputs for the I-channel, each with 50 input impedance. Internally biased at about 0.54V. Applied voltage must stay below 2.5V. Exposed Pad (Pin 17): Ground. This pin must be soldered to the printed circuit board ground plane. 5568f 7 LT5568 W BLOCK DIAGRA VCC 8 BBPI 14 13 LT5568 V-I BBMI 16 11 RF 0 90 BBPQ 7 BALUN 1 EN V-I BBMQ 5 2 4 6 9 3 GND LO 10 12 15 17 5568 BD GND U U W U APPLICATIO S I FOR ATIO The LT5568 consists of I and Q input differential voltageto-current converters, I and Q up-conversion mixers, an RF output balun, an LO quadrature phase generator and LO buffers. LT5568 RF C VCC = 5V BALUN FROM Q LOMI R1A 25 LOPI R2B 23 R1B 23 BBPI R2A 25 CM 12pF R3 R4 12pF Baseband Interface VREF = 540mV BBMI 5568 F01 GND Figure 1. Simplified Circuit Schematic of the LT5568 (Only I-Half is Drawn) External I and Q baseband signals are applied to the differential baseband input pins, BBPI, BBMI, and BBPQ, BBMQ. These voltage signals are converted to currents and translated to RF frequency by means of double-balanced up-converting mixers. The mixer outputs are combined in an RF output balun, which also transforms the output impedance to 50. The center frequency of the resulting RF signal is equal to the LO signal frequency. The LO input drives a phase shifter which splits the LO signal into inphase and quadrature LO signals. These LO signals are then applied to on-chip buffers which drive the up-conversion mixers. Both the LO input and RF output are single-ended, 50-matched and AC coupled. The baseband inputs (BBPI, BBMI), (BBPQ, BBMQ) present a differential input impedance of about 100. At each of the four baseband inputs, a first-order lowpass filter using 25 5568f 8 LT5568 U U W U APPLICATIO S I FOR ATIO and 12pF to ground is incorporated (see Figure 1), which limits the baseband bandwidth to approximately 330MHz (-1dB point). The common mode voltage is about 0.54V and is approximately constant over temperature. It is important that the applied common mode voltage level of the I and Q inputs is about 0.54V in order to properly bias the LT5568. Some I/Q test generators allow setting the common mode voltage independently. In this case, the common mode voltage of those generators must be set to 0.27V to match the LT5568 internal bias, because for DC signals, there is no -6dB source-load voltage division (see Figure 2). 50 + - 50 0.27VDC 0.54VDC 50 + - GENERATOR 48 0.54VDC 0.54VDC 0.54VDC GENERATOR + - LT5568 5568 F02 Figure 2. DC Voltage Levels for a Generator Programmed at 0.27VDC for a 50 Load and the LT5568 as a Load The baseband inputs should be driven differentially; otherwise, the even-order distortion products will degrade the overall linearity severely. Typically, a DAC will be the signal source for the LT5568. Reconstruction filters should be placed between the DAC output and the LT5568's baseband inputs. In Figure 3, an example interface schematic shows a commonly used DAC output interface followed by a passive 5th order ladder filter. The DAC in this example sources a current from 0mA to 20mA. The interface may be DC coupled. This allows adjustment of the DAC's differential output current to minimize the LO feedthrough. Optionally, transformer T1 can be inserted to improve the current balance in the BBPI and BBMI pins. This will improve the 2nd order distortion performance (OIP2). The maximum single sideband CW RF output power at 850MHz using both I and Q channels with the configuration shown in Figure 3 is about -3dBm. The maximum CW output power can be increased by connecting load resistors R5 and R6 to -5V instead of GND, and changing their values to 550. In that case, the maximum single sideband CW RF output power at 850MHz will be about +2dBm. In addition, the ladder filter component values require adjustment for a higher source impedance. VCC = 5V LT5568 BALUN RF = -3dBm, MAX C LOMI 0.5V 0mA to 20mA L1A C1 BBPI * R5, 50 DAC C2 T1 1:1 GND R6, 50 L1B C3 L2B R1 45 R2 45 CM R3 33 VREF = 500mV * 0mA to 20mA L2A LOPI R4 33 15mA BBMI 0.5V 5568 F03 GND Figure 3. LT5568 5th Order Filtered Baseband Interface with Common DAC (Only I-Channel is Shown) 5568f 9 LT5568 U U W U APPLICATIO S I FOR ATIO LO Section The internal LO input amplifier performs single-ended to differential conversion of the LO input signal. Figure 4 shows the equivalent circuit schematic of the LO input. VCC 20pF LO INPUT 51 5568 F04 Figure 4. Equivalent Circuit Schematic of the LO Input The internal, differential LO signal is then split into in-phase and quadrature (90 phase shifted) signals that drive LO buffer sections. These buffers drive the double balanced I and Q mixers. The phase relationship between the LO input and the internal in-phase LO and quadrature LO signals is fixed, and is independent of start-up conditions. The internal phase shifters are designed to deliver accurate quadrature signals. For LO frequencies significantly below 600MHz or above 1GHz, however, the quadrature accuracy will diminish, causing the image rejection to degrade. The LO pin input impedance is about 50, and the recommended LO input power is 0dBm. For lower LO input power, the gain, OIP2, OIP3 and noise floor at PRF = 4dBm will degrade, especially below -5dBm and at TA = 85C. For high LO input power (e.g., +5dBm), the LO feedthrough will increase with no improvement in linearity or gain. For lower LO input power, e.g., PLO = -5dBm, the image rejection improves (especially around 950MHz) at the cost of 1.5dB degradation of the noise floor at PRF = 4dBm. Harmonics present on the LO signal can degrade the image rejection because they can introduce a small excess phase shift in the internal phase splitter. For the second (at 1.7GHz) and third harmonics (at 2.55GHz) at -20dBc, the resulting signal at the image frequency is about -56dBc or lower, corresponding to an excess phase shift of much less than 1 degree. For the second and third LO harmonics at -10dBc, the introduced signal at the image frequency is about -47dBc. Higher harmonics than the third will have less impact. The LO return loss typically will be better than 11dB over the 700MHz to 1.05GHz range. Table 1 shows the LO port input impedance vs frequency. Table 1. LO Port Input Impedance vs Frequency for EN = High and PLO = 0dBm Frequency MHz Input Impedance Mag S11 Angle 500 600 700 800 900 1000 1100 1200 47.5 + j12.1 59.4 + j8.4 66.2 - j1.14 67.2 - j13.4 61.1 - j23.9 53.3 - j26.8 48.2 - j26.1 42.0 - j27.4 0.126 0.115 0.140 0.185 0.232 0.252 0.258 0.297 95.0 37.8 -3.41 -31.7 -53.2 -68.7 -79.4 -90.0 If the part is in shutdown mode, the input impedance of the LO port will be different. The LO input impedance for EN = Low is given in Table 2. Table 2. LO Port Input Impedance vs Frequency for EN = Low and PLO = 0dBm Frequency MHz Input Impedance Mag S11 Angle 500 600 700 800 900 1000 1100 1200 33.6 + j41.3 59.8 + j69.1 140 + j89.8 225 - j62.6 92.9 - j128 39.8 - j95.9 22.8 - j72.7 16.0 - j57.3 0.477 0.539 0.606 0.659 0.704 0.735 0.755 0.763 85.4 49.8 19.6 -6.8 -29.6 -45.5 -65.6 -79.7 RF Section After up-conversion, the RF outputs of the I and Q mixers are combined. An on-chip balun performs internal differential to single-ended output conversion, while transforming the output signal impedance to 50. Table 3 shows the RF port output impedance vs frequency. Table 3. RF Port Output Impedance vs Frequency for EN = High and PLO = 0dBm Frequency MHz Input Impedance Mag S22 Angle 500 600 700 800 900 1000 1100 1200 22.0 + j5.7 28.2 + j12.5 38.8 + j14.8 49.4 + j7.2 49.3 - j5.1 42.5 - j11.1 36.7 - j11.7 33.0 - j10.3 0.395 0.317 0.206 0.072 0.051 0.143 0.202 0.238 164.2 141.3 117.5 90.6 -94.7 -117.0 -130.7 -141.6 5568f 10 LT5568 U U W U APPLICATIO S I FOR ATIO The RF output S22 with no LO power applied is given in Table 4. Table 4. RF Port Output Impedance vs Frequency for EN = High and No LO Power Applied Frequency MHz Input Impedance Mag S22 Angle 500 22.7 + j5.6 0.381 164.0 600 29.7 + j11.6 0.290 142.0 700 40.5 + j11.6 0.164 121.9 800 47.3 + j2.2 0.037 139.6 900 44.1 - j6.7 0.094 -126.9 1000 38.2 - j9.8 0.171 -133.9 1100 34.0 - j9.4 0.218 -143.1 1200 31.5 - j7.8 0.245 -151.6 For EN = Low the S22 is given in Table 5. Table 5. RF Port Output Impedance vs Frequency for EN = Low Frequency MHz Input Impedance Mag S22 Angle 500 21.2 + j5.4 0.409 164.9 600 26.6 + j12.5 0.340 142.5 700 36.6 + j16.6 0.241 118.1 800 49.2 + j11.6 0.116 87.4 900 52.9 - j2.0 0.034 -33.1 1000 46.4 - j11.2 0.121 -101.1 1100 39.3 - j13.2 0.188 -120.6 1200 34.4 - j12.1 0.231 -133.8 VCC Note that an ESD diode is connected internally from the RF output to ground. For strong output RF signal levels (higher than 3dBm), this ESD diode can degrade the linearity performance if the 50 termination impedance is connected directly to ground. To prevent this, a coupling capacitor can be inserted in the RF output line. This is strongly recommended during a 1dB compression measurement. Enable Interface Figure 6 shows a simplified schematic of the EN pin interface. The voltage necessary to turn on the LT5568 is 1V. To disable (shut down) the chip, the enable voltage must be below 0.5V. If the EN pin is not connected, the chip is disabled. This EN = Low condition is assured by the 75k on-chip pull-down resistor. It is important that the voltage at the EN pin does not exceed VCC by more than 0.5V. If this should occur, the supply current could be sourced through the EN pin ESD protection diodes, which are not designed to carry the full supply current, and damage may result. VCC EN 75k 25k 21pF RF OUTPUT 7nH 1pF 51 5568 F06 5568 F05 Figure 5. Equivalent Circuit Schematic of the RF Output Figure 6. EN Pin Interface 5568f 11 LT5568 U U W U APPLICATIO S I FOR ATIO Evaluation Board Figure 7 shows the evaluation board schematic. A good ground connection is required for the exposed pad. If this is not done properly, the RF performance will degrade. Additionally, the exposed pad provides heat sinking for the part and minimizes the possibility of the chip overheating. J1 R1 (optional) limits the EN pin current in the event that the EN pin is pulled high while the VCC inputs are low. In Figures 8 and 9 the silk screens and the PCB board layout are shown. J2 BBIM BBIP VCC 16 R1 100 1 VCC EN 2 LO IN J4 3 4 15 14 C2 100nF 13 BBMI GND BBPI VCC EN GND GND RF LT5568 LO GND GND GND GND BBMQ GND BBPQ VCC 5 6 7 12 10 BBQM RF OUT 9 17 8 C1 100nF J5 J3 11 J6 GND BBQP BOARD NUMBER: DC966A Figure 7. Evaluation Circuit Schematic 5568 F07 Figure 8. Component Side of Evaluation Board Figure 9. Bottom Side of Evaluation Board 5568f 12 LT5568 U U W U APPLICATIO S I FOR ATIO Application Measurements The LT5568 is recommended for base-station applications using various modulation formats. Figure 10 shows a typical application. Figure 11 shows the ACPR performance for CDMA2000 using 1- and 3-carrier modulation. Figures 12 and 13 illustrate the 1- and 3-carrier CDMA2000 RF spectrum. To calculate ACPR, a correction is made for the spectrum analyzer noise floor. If the output power is high, the ACPR will be limited by the linearity performance of the part. If the output power is low, the ACPR will be limited by the noise performance of the part. In the middle, an optimum ACPR is observed. Because of the LT5568's very high dynamic range, the test equipment can limit the accuracy of the ACPR measure- V-I I-CHANNEL 0 1 EN 11 90 7 Q-DAC 5 Q-CHANNEL BALUN V-I PA -135 -60 3-CH. ACPR -70 3-CH. AltCPR 1-CH. AltCPR -80 BASEBAND GENERATOR 2, 4, 6, 9, 10, 12, 15, 17 3 VCO/SYNTHESIZER -125 DOWNLINK TEST MODEL 64 DPCH 1-CH. ACPR -145 -155 NOISE FLOOR AT 30MHz OFFSET (dBm/Hz) 16 -50 ACPR, AltCPR (dBc) L5568 14 The ACPR performance is sensitive to the amplitude match of the BBIP and BBIM (or BBQP and BBQM) inputs. This is because a difference in AC current amplitude will give rise to a difference in amplitude between the even-order harmonic products generated in the internal V-I converter. As a result, they will not cancel out entirely. Therefore, it is important to keep the currents in those pins exactly the same (but of opposite sign). The current will enter the LT5568's common-base stage, and will flow to the mixer upper switches. This can be seen in Figure 1 where the internal circuit of the LT5568 is drawn. For best results, a high ohmic source is recommended; for example, the 5V 100nF x2 RF = 700MHz TO 1050MHz VCC 8, 13 I-DAC ment. See Application Note 99. Consult the factory for advice on the ACPR measurement, if needed. 3-CH. NOISE 5568 F10 1-CH. NOISE -90 -30 -165 -25 -15 -10 -5 -20 RF OUTPUT POWER PER CARRIER (dBm) 5568 F11 Figure 10. 700MHz to 1050MHz Direct Conversion Transmitter Application -30 -50 -60 -70 -80 -90 UNCORRECTED SPECTRUM -100 CORRECTED SPECTRUM -110 SPECTRUM ANALYSER NOISE FLOOR -130 846.25 847.75 849.25 850.75 852.25 853.75 RF FREQUENCY (MHz) 5568 F12 Figure 12. 1-Carrier CDMA2000 Spectrum DOWNLINK TEST MODEL 64 DPCH -40 POWER IN 30kHz BW (dBm) POWER IN 30kHz BW (dBm) -30 DOWNLINK TEST MODEL 64 DPCH -40 -120 Figure 11. APCR, AltCPR and Noise CDMA2000 Modulation -50 -60 -70 -80 -90 UNCORRECTED SPECTRUM -100 -110 -120 -130 844 CORRECTED SPECTRUM 846 SPECTRUM ANALYSER NOISE FLOOR 850 852 852 848 RF FREQUENCY (MHz) 856 5568 F13 Figure 13. 3-Carrier CDMA2000 Spectrum 5568f 13 LT5568 U U W U APPLICATIO S I FOR ATIO interface circuit drawn in Figure 3, modified by pulling resistors R5 and R6 to a -5V supply and adjusting their values to 550, with T1 omitted. Another method to reduce current mismatch between the currents flowing in the BBIP and BBIM pins (or the BBQP and BBQM pins) is to use a 1:1 transformer with the two windings in the DC path (T1 in Figure 3). For DC, the transformer forms a short, and for AC, the transformer will reduce the common mode current component, which forces the two currents to be better matched. Alternatively, a transformer with 1:2 impedance ratio can be used, which gives a convenient DC separation between primary and secondary in combination with the required impedance -40 match. The secondary center tap should not be connected, which allows some voltage swing if there is a single-ended input impedance difference at the baseband pins. As a result, both currents will be equal. The disadvantage is that there is no DC coupling, so the LO feedthrough calibration cannot be performed via the BB connections. After calibration when the temperature changes, the LO feedthrough and the image rejection performance will change. This is illustrated in Figure 14. The LO feedthrough and image rejection can also change as a function of the baseband drive level, as is depicted in Figure 15. In Figures 16 and 17 the LO feedthrough and image rejection vs LO power are shown. 10 CALIBRATED WITH PRF = -10dBm -40C 0 LOFT (dBm), IR (dBc) -60 LO FEEDTHROUGH -70 -80 VCC = 5V fBBI = 2MHz, 0 fBBQ = 2MHz, 90 + fLO = 850MHz -90 -40 -20 PRF, LOFT (dBm), IR (dBc) IMAGE REJECTION -50 40 20 0 TEMPERATURE (C) 60 25C -10 -20 LOFT -30 -40C -40C -40 85C -50 IR 85C VCC = 5V EN = High fLO = 850MHz -60 -70 fRF = fBB + fLO PLO = 0dBm EN = High -80 -90 80 85C PRF 25C 0 5568 F14 fBB, 1 = 2MHz, 0 fBB, 0 = 2MHz, 90 fRF = fBB + fLO PLO = 0dBm 1 3 4 5 2 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) 5568 F15 Figure 14. LO Feedthrough and Image Rejection vs Temperature after Calibration at 25C Figure 15. LO Feedthrough and Image Rejection vs Baseband Drive Voltage after Calibration at 25C -42 -25 fLO = 850MHz fLO = 850MHz PRF = -10dBm IMAGE REJECTION (dBc) LO FEEDTHROUGH (dBm) -30 -44 -46 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -48 -50 -20 -16 -12 -8 -4 0 4 LO INPUT POWER (dBm) -35 -40 -45 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -50 8 5568 G16 Figure 16. LO Feedthrough vs LO Power -55 -20 -16 0 4 -12 -8 -4 LO INPUT POWER (dBm) 8 5568 G17 Figure 17. Image Rejection vs LO Power 5568f 14 LT5568 U PACKAGE DESCRIPTIO UF Package 16-Lead Plastic QFN (4mm x 4mm) (Reference LTC DWG # 05-08-1692) 0.72 0.05 4.35 0.05 2.15 0.05 2.90 0.05 (4 SIDES) PACKAGE OUTLINE 0.30 0.05 0.65 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW--EXPOSED PAD 4.00 0.10 (4 SIDES) 0.75 0.05 R = 0.115 TYP 15 PIN 1 NOTCH R = 0.20 TYP OR 0.35 x 45 CHAMFER 16 0.55 0.20 PIN 1 TOP MARK (NOTE 6) 1 2.15 0.10 (4-SIDES) 2 (UF16) QFN 10-04 0.200 REF 0.00 - 0.05 0.30 0.05 0.65 BSC NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 5568f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 15 LT5568 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 DC to 3GHz High Signal Level Downconverting Mixer DC to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5514 Ultralow Distortion, IF Amplifier/ADC Driver with Digitally Controlled Gain 850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature 20dBm IIP3, Integrated LO Quadrature Generator Demodulator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature 21.5dBm IIP3, Integrated LO Quadrature Generator Demodulator LT5517 40MHz to 900MHz Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator LT5518 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator 22.8dBm OIP3 at 2GHz, -158.2dBm/Hz Noise Floor, 50 Single-Ended LO and RF Ports, 4-Ch W-CDMA ACPR = -64dBc at 2.14GHz LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50 Matching, Single-Ended LO and RF Ports Operation LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50 Matching, Single-Ended LO and RF Ports Operation LT5521 10MHz to 3700MHz High Linearity Upconverting Mixer 24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO Port Operation LT5522 600MHz to 2.7GHz High Signal Level Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50 Single-Ended RF and LO Ports LT5524 Low Power, Low Distortion ADC Driver with Digitally Programmable Gain 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control LT5526 High Linearity, Low Power Downconverting Mixer 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA, -65dBm LO-RF Leakage LT5527 400MHz to 3.7GHz High Signal Level Downconverting Mixer IIP3 = 23.5dBm and NF = 12.5dB at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA LT5528 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator 21.8dBm OIP3 at 2GHz, -159.3dBm/Hz Noise Floor, 50, 0.5VDC Baseband Interface, 4-Ch W-CDMA ACPR = -66dBc at 2.14GHz Infrastructure RF Power Detectors LTC(R)5505 RF Power Detectors with >40dB Dynamic Range LTC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Low Power Consumption, SC70 Package LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset LT5534 50MHz to 3GHz Loq RF Power Detector with 60dB Dynamic Range 1dB Output Variation over Temperature, 38ns Response Time LTC5536 Precision 600MHz to 7GHz RF Detector with Fast Comparater 25ns Response Time, Comparator Reference Input, Latch Enable Input, -26dBm to +12dBm Input Range LT5537 Wide Dynamic Range Loq RF/IF Detector Low Frequency to 800MHz, 83dB Dynamic Range, 2.7V to 5.25V Supply LTC2220-1 12-Bit, 185Msps ADC Single 3.3V Supply, 910mW Consumption, 67.5dB SNR, 80dB SFDR, 775MHz Full Power BW LTC2249 14-Bit, 80Msps ADC Single 3V Supply, 222mW Consumption, 73dB SNR, 90dB SFDR LTC2255 14-Bit, 125Msps ADC Single 3V Supply, 395mW Consumption, 72.4dB SNR, 88dB SFDR, 640MHz Full Power BW 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply High Speed ADCs 5568f 16 Linear Technology Corporation LT/TP 1005 500 * PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507 www.linear.com (c) LINEAR TECHNOLOGY CORPORATION 2005