PTF210451E - Infineon Technologies

Data Sheet 12003-12-22

PTF210451E

Package 30265

Two–Carrier WCDMA Drive-Up

VDD = 28 V, IDQ

= 500 mA, f = 2140 MHz, 3GPP WCDMA

signal, P/A R = 8 dB, 10 MHz carrier spacing

-55

-50

-45

-40

-35

-30

30 32 34 36 38 40 42

Average Output Power (dBm)

IM3 (dBc), ACPR (dBc)

Drain Efficiency (%)

IM3

ACPR

Efficiency

LDMOS RF Power Field Effect Transistor

45 W, 2110–2170 MHz

Description

The PTF210451 is a 45 W internally matched GOLDMOS FET

intended for WCDMA applications from 2110 to 2170 MHz. Full gold

metallization ensures excellent device lifetime and reliability.

Features

•Internal matching for wideband performance

•Typical two–carrier WCDMA performance

- Average output power = 11.5 W

- Gain = 14 dB

- Efficiency = 27%

- IM3 = –37 dBc

•Typical CW performance

- Output power at P–1dB = 50 W

- Linear gain = 14 dB

- Efficiency = 53%

•Integrated ESD protection: Human Body Model,

Class 1 (minimum)

•Excellent thermal stability

•Low HCI Drift

•Capable of handling 10:1 VSWR @ 28 V,

45 W (CW) output power

RF Performance at TCASE = 25°C unless otherwise indicated

WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 500 mA, POUT = 11.5 W AVG

f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF

Characteristic Symbol Min Typ Max Units

Intermodulation Distortion IMD —–37 —dBc

Gain Gps —14 —dB

Drain Efficiency η

D—27 —%

Two–Tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz

Characteristic Symbol Min Typ Max Units

Gain Gps 13 14 —dB

Drain Efficiency η

D35 38 —%

Intermodulation Distortion IMD —–32 –30 dBc

PTF210451

ESD: Electrostatic discharge sensitive device — observe handling precautions!

Data Sheet 22003-12-22

PTF210451

DC Characteristics at TCASE = 25°C unless otherwise indicated

Characteristic Conditions Symbol Min Typ Max Units

Drain–Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V

Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA

On–State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.2 —Ω

Operating Gate Voltage VDS = 28 V, IDQ = 500 mA VGS 2.5 3.2 4.0 V

Gate Leakage Current VGS = 10 V, VDS = 0 VIGSS — — 1.0 µA

Maximum Ratings

Parameter Symbol Value Unit

Drain–Source Voltage VDSS 65 V

Gate–Source Voltage VGS –0.5 to +12 V

Junction Temperature TJ200 °C

Total Device Dissipation PD175 W

Above 25°C derate by 1.0 W/°C

Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 1.0 °C/W

Typical Performance (data taken in production test fixture)

Broadband Performance

VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm

2070 2105 2140 2175 2210

Frequency (MHz)

Gain (dB), Efficiency (%)

-30

-25

-20

-15

-10

-5

Input Return Loss (dB)

Input Retrun Loss

Gain

Efficiency

Power Sweep, CW Conditions

VDD = 28 V, IDQ = 500 mA, f = 2170 MHz

34 36 38 40 42 44 46 48

Output Power (dBm)

Gain (dB)

Drain Efficiency (%)

Efficiency

Gain

Data Sheet 32003-12-22

PTF210451

Typical Performance (cont.)

Intermodulation Distortion vs. Output Power

for selected currents

VDD = 28 V, f = 2140 MHz, tone spacing = 1 MHz

-60

-55

-50

-45

-40

-35

-30

34 36 38 40 42 44 46 48

Output Power, PEP (dBm)

IMD (dBc)

0.40 A

0.60 A

0.45 A 0.55 A

0.50 A

Intermodulation Distortion Products

vs. Tone Spacing

VDD = 28 V, IDQ = 500 mA, f = 2140 MHz,

POUT = 45 W PEP

-60

-55

-50

-45

-40

-35

-30

-25

010 20 30 40

Tone Spacing (MHz)

IMD (dBc)

3rd Order

7th Order

5th Order

Two–Tone Drive–Up

VDD = 28 V, IDQ

= 500 mA, f = 2140 MHz,

tone spacing = 1MHz

-65

-60

-55

-50

-45

-40

-35

-30

-25

34 36 38 40 42 44 46 48

Peak Output Power (dBm)

IMD (dBc)

Drain Efficiency (%)

Efficiency

IM3

IM7

IM5

Single–Carrier WCDMA Drive–Up

VDD = 28 V, IDQ

= 500 mA, f = 2140 MHz, 3GPP WCDMA

signal, Test Model 1 w/16 DPCH, 67% clipping,

P/A R = 8.7 dB, 3.84 MHz BW

-60

-55

-50

-45

-40

-35

30 32 34 36 38 40 42

Avgerage Output Power (dBm)

ACPR (dB)

Drain Efficiency (%)

Efficiency

ACPR Low

ACPR Up

Data Sheet 42003-12-22

PTF210451

0.1

0.3

0.2

0.1

0.3

S T

2210 MHz

2070 MHz

Z Load

Z Source

2070 MHz

Z Source Z Load

Broadband Circuit Impedance Data

Frequency Z Source ΩZ Load Ω

MHz RjX RjX

2070 5.72 -9.36 4.94 -0.87

2110 5.17 -8.97 4.90 -0.69

2140 4.88 -8.52 4.96 -0.60

2170 4.59 -8.16 4.96 -0.49

2210 4.08 -7.79 4.88 -0.39

Z0 = 50 Ω

IM3, Gain & Drain Efficiency vs. Supply Voltage

IDQ = 500 mA, f = 2140 MHz, POUT = 44.75 dBm (PEP),

Tone Spacing = 1 MHz

-45

-40

-35

-30

-25

-20

-15

-10

-5

23 24 25 26 27 28 29 30 31 32 33

Supply Voltage (V)

Gain

Efficiency

IM3 Up

3rd Order IMD (dBc)

Gain (dB), Drain Efficiency (%)

Typical Performance (cont.)

Bias Voltage vs. Case Temperature

Voltage normalized to typical gate voltage.

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

-20 5 30 55 80 105

Case Temperature (ºC)

Normalized Bias Voltage

4.50 A

3.75 A

3.00 A

2.25 A

1.50 A

0.75 A

Series show current.

Data Sheet 52003-12-22

PTF210451

Test Circuit

Test Circuit Schematic for 2170 MHz

Circuit Assembly Information

DUT PTF210451E LDMOS Transistor

Circuit Board 0.79 mm. [.031”] thick, εr = 4.5 Rogers TMM4, 2 oz. copper

Microstrip Electrical Characteristics at 2170 MHz Dimensions: L x W (mm.) Dimensions: L x W (in.)

l10.047 λ, 45 Ω3.48 x 1.78 0.137 x 0.070

l20.040 λ, 23 Ω2.87 x 4.57 0.113 x 0.180

l30.132 λ, 66 Ω10.08 x 0.89 0.397 x 0.035

l40.028 λ, 45 Ω2.08 x 1.78 0.082 x 0.070

l50.018 λ, 12 Ω26.67 x 10.06 1.050 x 0.396

l60.074 λ, 7 Ω4.98 x 17.68 0.196 x 0.696

l70.152 λ, 9 Ω10.34 x 13.56 0.407 x 0.534

l80.257 λ, 68 Ω19.76 x 0.84 0.778 x 0.033

l90.027 λ, 44 Ω1.98 x 1.83 0.078 x 0.072

l10 0.056 λ, 56 Ω4.22 x 1.22 0.166 x 0.048

l11 0.036 λ, 19 Ω2.57 x 5.74 0.101 x 0.226

l12 0.076 λ, 44 Ω5.64 x 1.80 0.222 x 0.071

210451E SCHEMATIC DWG FOR DATA SHEET.dwg

Data Sheet 62003-12-22

PTF210451

Test Circuit (cont.)

Reference Circuit1 (not to scale)

Component Description Manufacturer P/N or Comment

C1 Capacitor, 10 µF, 35 V, Tantalum TE, SMD Digi-Key PCS6106TR-ND

C2, C8 Capacitor, 0.01 µF ATC X08J103AFB ATC 200B103MW

C3, C7 Capacitor, 1 µF ATC X24L105BVC

C4, C6 Capacitor, 7.5 pF ATC 100B 7R5

C5, C9 Capacitor, 10 pF ATC 100A 100

L1 Ferrite Bead Elne Magnetic #BDS31314.6-452

R1, R2 Resistor, 3.3K ohm, 1/4 W Digi-Key P3.3K ECT-ND

R3 Resistor, 10 ohm, 1/4 W Digi-Key P10 ECT-ND

1 Gerber files for this circuit available on request

210451E ASSEMBLY DWG FOR DATA SHEET.dwg

Data Sheet 72003-12-22

PTF210451

Ordering Information

Type Package Outline Package Description Marking

PTF210451E 30265 Thermally enhanced, flange PTF210451E

Notes: Unless otherwise specified

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. Pins: D = drain, S = source, G = gate.

4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]

Package Outline Specifications

Package 30265

20.31

[.800]

10.16±0.25

[.400±.010]

2X 2.59±0.38

[.107 ±.015]

FLANGE 9.78

[.385]

2x 7.11

[.280]

7.11

[.280]

15.23

[.600]

4x 1.52

[.060]

(45° X 2.03

[.080])

2X R1.60

[.063]

LID 10.16±0.25

[.400±.010]

0.0381 [.0015] -A-

3.48±0.38

[.137±.015]

1.02

[.040]

0.51

[.020]

SPH 1.57

[.062]

15.60±0.51

[.614±.020]

30265-2303-mec

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

Data Sheet 82003-12-22

Edition 2003-12-22

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

81669 München, Germany

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office (www.infineon.com/rfpower).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support

device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it

is reasonable to assume that the health of the user or other persons may be endangered.

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PTF210451

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