GaAs Infrared Emitting Diodes VTE1013H TO-46 Flat Window Package -- 940 nm PACKAGE DIMENSIONS inch (mm) CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications. RoHS Compliant ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise:1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max. -55C to 125C 200 mW 2.11 mW/C 100 mA 1.05 mA/C 3.0 A -.8%/C 5.0V 10 A 940 nm 35 pF 260C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also GaAlAs curves, pages 123-124) Output Irradiance Part Number Ee Half Power Beam Angle Total Power Test Current VF Ie PO IFT @ IFT Volts Typ. Max. 1.9 2.5 Radiant Intensity Condition mW/cm2 VTE1013 Forward Drop distance Diameter mW/sr mW Min. Typ. mm mm Min. Typ. mA (Pulsed) 2.1 2.7 36 6.4 27 30 1.0 1/2 Typ. 35 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 126 www.perkinelmer.com/opto