VS-ST203C Series
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Inverter Grade Thyristors
(Hockey PUK Version), 370 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case A-PUK (TO-200AB)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
Package A-PUK (TO-200AB)
Circuit configuration Single SCR
IT(AV) 370 A
VDRM/VRRM 1000 V, 1200 V
VTM 1.72 V
ITSM at 50 Hz 5260 A
ITSM at 60 Hz 5510 A
IGT 200 mA
TC/Ths 55 °C
A-PUK (TO-200AB)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
370 A
Ths 55 °C
IT(RMS)
700 A
Ths 25 °C
ITSM
50 Hz 5260 A
60 Hz 5510
I2t50 Hz 138 kA2s
60 Hz 126
VDRM/VRRM 1000 to 1200 V
tqRange 20 to 30 μs
TJ-40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST203C..C 10 1000 1100 40
12 1200 1300
VS-ST203C Series
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CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 860 750 1340 1160 5620 5020
A
400 Hz 840 706 1400 1220 2940 2590
1000 Hz 700 580 1350 1170 1750 1520
2500 Hz 430 340 980 830 910 780
Recovery voltage Vr50 50 50 V
Voltage before turn-on VdVDRM VDRM VDRM
Rise of on-state current dI/dt 50 - - A/μs
Heatsink temperature 405540554055°C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV) 180° conduction, half sine wave
double side (single side) cooled
370 (140) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 700
A
Maximum peak, one half cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5260
t = 8.3 ms 5510
t = 10 ms 100 % VRRM
reapplied
4420
t = 8.3 ms 4630
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
138
kA2s
t = 8.3 ms 126
t = 10 ms 100 % VRRM
reapplied
98
t = 8.3 ms 89
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1380 kA2s
Maximum peak on-state voltage VTM ITM = 600 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse 1.72
V
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.17
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.22
Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.92
m
High level value of forward slope
resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.83
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Typical latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt 1000 A/μs
Typical delay time tdTJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source 0.8
μs
Maximum turn-off time
minimum
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
20
maximum 30
180° el
ITM
180° el
ITM
100 µs
ITM
VS-ST203C Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request 500 V/μs
Maximum peak reverse and off-state leakage current IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, f = 50 Hz, d % = 50 60 W
Maximum average gate power PG(AV) 10
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
10 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5
Maximum DC gate currrent required to trigger IGT TJ = 25 °C, VA = 12 V, Ra = 6 200 mA
Maximum DC gate voltage required to trigger VGT 3V
Maximum DC gate current not to trigger IGD TJ = TJ maximum, rated VDRM applied 20 mA
Maximum DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.17
K/W
DC operation double side cooled 0.08
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 % 4900
(500)
N
(kg)
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet A-PUK (TO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.015 0.017 0.011 0.011
TJ = TJ maximum K/W
120° 0.018 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
VS-ST203C Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
0250
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
50 100 150 200
40
50
60
70
80
90
100
110
120
130
ST203C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
Ø
Conduction angle
60°30° 90° 120°
180°
0250 300 350 400
Average On-State Current (A)
50 150
100 200
Maximum Allowable
Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
ST203C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
Ø
Conduction period
30°
60°
90°
120° 180°
DC
0400300 500
Average On-State Current (A)
100 200
Maximum Allowable
Heatsink Temperature (°C)
30
20
40
50
60
70
80
90
100
110
120
130
30° 60° 90°
180°
ST203C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
Ø
Conduction angle
120°
Average On-State Current (A)
Maximum Allowable
Heatsink Temperature (°C)
0500 600 700 800
100 300
200 400
20
30
40
50
60
70
80
90
100
110
120
130
ST203C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
Ø
Conduction period
30° 60°
DC
180°
90°
120°
Average On-State Current (A)
Maximum Average On-State
Power Loss (W)
0
100
200
300
400
500
600
700
800
900
1000
0250 300 350 400 450
50 150
100 200
RMS limit
180°
120°
90°
60°
30°
Ø
Conduction angle
ST203C..C Series
TJ = 125 °C
Maximum Average On-State
Power Loss (W)
0
200
400
600
800
1000
1200
1400
0300 400 500 600 700 800
100 200
DC
180°
120°
90°
60°
30°
RMS limit
ST203C..C Series
TJ = 125 °C
Ø
Conduction period
Average On-State Current (A)
VS-ST203C Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
2000
2500
3000
3500
4000
5000
4500
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated VRRM applied following surge
ST203C..C Series
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave
On-State Current (A)
2000
2500
3000
3500
4000
4500
5000
5500
No voltage reapplied
Rated VRRM reapplied
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained
Initial TJ = 125 °C
ST203C..C Series
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1000
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
ST203C..C Series
TJ = 25 °C
TJ = 125 °C
0.01 0.1 1 100.001
1
Square Wave Pulse Duration (s)
Z
thJ-hs
-
Transient Thermal
Impedance (K/W)
0.001
0.01
0.1
ST203C..C Series
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
200406080100
dI/dt - Rate of Fall of On-State Current (A/µs)
Qrr - Maximum Reverse Recovery Charge
(µC)
0
50
100
150
200
250
ST203C..C Series
T
J
= 125 °C
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
20
0
200 40 60 80 100
40
60
80
100
120
140
160
dI/dt - Rate of Fall of Forward Current (A/µs)
I
rr
- Maximum Reverse Recovery
Current (A)
ST203C..C Series
TJ = 125 °C
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
VS-ST203C Series
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Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
t
p
ST203C..C Series
Sinusoidal pulse
TC = 40 °C
50 Hz
100
200
500
400
1000
1500
2500
3000
5000
10 000
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
t
p
ST203C..C Series
Sinusoidal pulse
TC = 55 °C
50 Hz
100
500
400
1000
1500
2500
3000
5000
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
200
10 100 1000 10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
ST203C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 50 A/µs
tp
50 Hz
100
500
400
1000
1500
2500
3000
5000
10 000
200
10 100 1000 10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
10
100
1000
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
ST203C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 50 A/µs
tp
50 Hz
100
500
400
1000
1500
2500
3000
5000
10 000
200
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
10
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
ST203C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 100 A/µs
tp
50 Hz
100
500
400
1000
1500
2500
3000
5000
10 000
200
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
10
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
ST203C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 100 A/µs
tp
50 Hz
100
500
400
1000
1500
2500
3000
5000
10 000
200
VS-ST203C Series
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Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
100 000
tp
ST203C..C Series
Sinusoidal pulse
0.1
0.2 0.5
2
4
1
10
20 joules per pulse
0.3
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
100 000
0.1
0.2
0.5 2
3
1
5
10
20 joules per pulse
0.3
ST203C..C Series
Rectangular pulse
dI/dt = 50 A/µs
tp
0.1
1
10
100
0.001
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 100
VGD
IGD
(1)
(b)
(2) (3)
Device: ST203C..C Series
(4)
Frequency limited by PG(AV)
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r ≤ 1 µs
(a)
TJ = 40 °C
TJ = 25 °C
TJ = 125 °C
VS-ST203C Series
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ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95074
3 = fast-on terminals
1
- Thyristor
2
- Essential part number
3
- 3 = fast turn-off
4
- C = ceramic PUK
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
10
6
- C = PUK case A-PUK (TO-200AB)
7
- Reapplied dV/dt code (for tq test condition)
8
-t
q code
9
- 0 = eyelet terminals
(gate and auxiliary cathode unsoldered leads)
(gate and auxiliary cathode unsoldered leads)
(gate and auxiliary cathode soldered leads)
(gate and auxiliary cathode soldered leads)
1 = fast-on terminals
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
20
25
CK DK EK
tq (µs)
2 = eyelet terminals
11 - Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
* Standard part number.
All other types available only on request.
30 CH DH EH FH HH
--
CJ DJ EJ FJ* -
Device code
51 32 4 6 7 8 9 10 11
STVS- 20 3 C 12 C H H 1 -
- Vishay Semiconductors product
Outline Dimensions
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A-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
DIA. MAX. 0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
25° ± 5°
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
42 (1.65) MAX.
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
C
A
G
Note:
A = Anode
C = Cathode
G = Gate
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