SZMMSZ5232BT1G - ON Semiconductor

 Semiconductor Components Industries, LLC, 2012

February, 2012 − Rev. 8

1Publication Order Number:

MMSZ5221ET1/D

MMSZ52xxET1G Series,

SZMMSZ52xxET1G Series

Zener Voltage Regulators

500 mW SOD−123 Surface Mount

Three complete series of Zener diodes are offered in the convenient,

surface mount plastic SOD−123 package. These devices provide a

convenient alternative to the leadless 34−package style.

Features

500 mW Rating on FR−4 or FR−5 Board

Wide Zener Reverse Voltage Range − 2.4 V to 110 V

Package Designed for Optimal Automated Board Assembly

Small Package Size for High Density Applications

General Purpose, Medium Current

ESD Rating of Class 3 (> 16 kV) per Human Body Model

Peak Power − 225 W (8 x 20 ms)

SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Pb−Free Packages are Available*

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

MAXIMUM RATINGS

Rating Symbol Max Units

Peak Power Dissipation @ 20 ms (Note 1)

@ TL  25C

Ppk 225 W

Total Power Dissipation on FR−5 Board,

(Note 3) @ TL = 75C

Derated above 75C

PD500

6.7

mW/C

Thermal Resistance, (Note 2)

Junction−to−Ambient

RqJA 340

C/W

Thermal Resistance, (Note 2)

Junction−to−Lead

RqJL 150

C/W

Junction and Storage Temperature Range TJ, Tstg −55 to

+150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Nonrepetitive current pulse per Figure 11.

2. Thermal Resistance measurement obtained via infrared Scan Method.

3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SOD−123

CASE 425

STYLE 1

Cathode

Anode

See specific marking information in the device marking

column of the Electrical Characteristics table on page 2 of

this data sheet.

DEVICE MARKING INFORMATION

http://onsemi.com

Device Package Shipping†

ORDERING INFORMATION

MARKING DIAGRAM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMSZ52xxET1G SOD−123

(Pb−Free)

3,000 /

Tape & Reel

MMSZ52xxET3G SOD−123

(Pb−Free)

10,000 /

Tape & Reel

xxx = Device Code (Refer to page 2)

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

xxx M G

SZMMSZ52xxET1G SOD−123

(Pb−Free)

3,000 /

Tape & Reel

MMSZ52xxET1G Series, SZMMSZ52xxET1G Series

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)

Symbol Parameter

VZReverse Zener Voltage @ IZT

IZT Reverse Current

ZZT Maximum Zener Impedance @ IZT

IZK Reverse Current

ZZK Maximum Zener Impedance @ IZK

IRReverse Leakage Current @ VR

VRReverse Voltage

IFForward Current

VFForward Voltage @ IFZener Voltage Regulator

IZT

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device*

Device

Marking

Zener Voltage (Notes 4 and 5) Zener Impedance (Note 6) Leakage Current

VZ (V) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR

Min Nom Max mA W W mA mAV

MMSZ5221ET1G CA1 2.28 2.4 2.52 20 30 1200 0.25 100 1

MMSZ5223ET1G CA3 2.57 2.7 2.84 20 30 1300 0.25 75 1

MMSZ5226ET1G CA6 3.14 3.3 3.47 20 28 1600 0.25 25 1

MMSZ5228ET1G CA8 3.71 3.9 4.10 20 23 1900 0.25 10 1

MMSZ5229ET1G CA9 4.09 4.3 4.52 20 22 2000 0.25 5 1

MMSZ5231ET1G CB2 4.85 5.1 5.36 20 17 1600 0.25 5 2

MMSZ5232ET1G CB3 5.32 5.6 5.88 20 11 1600 0.25 5 3

MMSZ5234ET1G CB5 5.89 6.2 6.51 20 7 1000 0.25 5 4

MMSZ5235ET1G CB6 6.46 6.8 7.14 20 5 750 0.25 3 5

MMSZ5236ET1G CB7 7.13 7.5 7.88 20 6 500 0.25 3 6

MMSZ5237ET1G CB8 7.79 8.2 8.61 20 8 500 0.25 3 6.5

MMSZ5240ET1G CC2 9.50 10 10.50 20 17 600 0.25 3 8

MMSZ5242ET1G CC4 11.40 12 12.60 20 30 600 0.25 1 9.1

MMSZ5243ET1G CC5 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9

MMSZ5244ET1G CC6 13.30 14 14.70 9.0 15 600 0.25 0.1 10

MMSZ5245ET1G CC7 14.25 15 15.75 8.5 16 600 0.25 0.1 11

MMSZ5246ET1G CC8 15.20 16 16.80 7.8 17 600 0.25 0.1 12

MMSZ5248ET1G CD1 17.10 18 18.90 7.0 21 600 0.25 0.1 14

MMSZ5250ET1G CD3 19.00 20 21.00 6.2 25 600 0.25 0.1 15

MMSZ5252ET1G CD5 22.80 24 25.20 5.2 33 600 0.25 0.1 18

4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.

5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.

6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied.

The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz.

*Include SZ-prefix devices where applicable

MMSZ52xxET1G Series, SZMMSZ52xxET1G Series

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device*

Leakage CurrentZener Impedance (Note 6)Zener Voltage (Notes 4 and 5)

Device

Marking

Device*

IR @ VR

ZZK @ IZK

ZZT @ IZT

@ IZT

VZ (V)

Device

Marking

Device* V

mAMaxNomMin

Device

Marking

MMSZ5253ET1G CD6 23.75 25 26.25 5.0 35 600 0.25 0.1 19

MMSZ5254ET1G CD7 25.65 27 28.35 4.6 41 600 0.25 0.1 21

MMSZ5255ET1G CD8 26.60 28 29.40 4.5 44 600 0.25 0.1 21

MMSZ5256ET1G CD9 28.50 30 31.50 4.2 49 600 0.25 0.1 23

MMSZ5257ET1G CE1 31.35 33 34.65 3.8 58 700 0.25 0.1 25

MMSZ5258ET1G CE2 34.20 36 37.80 3.4 70 700 0.25 0.1 27

MMSZ5259ET1G CE3 37.05 39 40.95 3.2 80 800 0.25 0.1 30

MMSZ5262ET1G CE6 48.45 51 53.55 2.5 125 1100 0.25 0.1 39

MMSZ5263ET1G CE7 53.20 56 58.80 2.2 150 1300 0.25 0.1 43

4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.

5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.

6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied.

The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz.

*Include SZ-prefix devices where applicable

MMSZ52xxET1G Series, SZMMSZ52xxET1G Series

http://onsemi.com

TYPICAL CHARACTERISTICS

VZ, NOMINAL ZENER VOLTAGE (V)

−3

−2

−1

12111098765432

Figure 1. Temperature Coefficients

(Temperature Range −55C to +150C)

TYPICAL TC VALUES

FOR MMSZ5221BT1G SERIES

VZ @ IZT

100

110 100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 2. Temperature Coefficients

(Temperature Range −55C to +150C)

VZ @ IZT

1.2

1.0

0.8

0.6

0.4

0.2

01501251007550250

T, TEMPERATURE (C)

Figure 3. Steady State Power Derating

PD versus TA

PD versus TL

0.1

PW, PULSE WIDTH (ms)

Figure 4. Maximum Nonrepetitive Surge Power

1 10 100 1000

1000

100

RECTANGULAR

WAVEFORM, TA = 25C

100

VZ, NOMINAL ZENER VOLTAGE

Figure 5. Effect of Zener Voltage on

Zener Impedance

101

1000

100

TJ = 25C

IZ(AC) = 0.1 IZ(DC)

f = 1 kHz

IZ = 1 mA

5 mA

20 mA

, FORWARD VOLTAGE (V)

Figure 6. Typical Forward Voltage

1.21.11.00.90.80.70.60.50.4

1000

100

75 V (MMSZ5267BT1)

91 V (MMSZ5270BT1)

150C75C 25C 0C

TYPICAL TC VALUES

FOR MMSZ5221BT1G SERIES

qVZ, TEMPERATURE COEFFICIENT (mV/C)

Ppk, PEAK SURGE POWER (WATTS)

ZZT

, DYNAMIC IMPEDANCE (W)

, FORWARD CURRENT (mA)

PD, POWER DISSIPATION (WATTS)

MMSZ52xxET1G Series, SZMMSZ52xxET1G Series

http://onsemi.com

TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 7. Typical Capacitance

1000

100

1101

BIAS AT

50% OF VZ NOM

TA = 25C

0 V BIAS

1 V BIAS

VZ, ZENER VOLTAGE (V)

100

0.1

0.01 1086420

TA = 25C

VZ, ZENER VOLTAGE (V)

100

0.1

0.01 10 30 50 70 90

TA = 25C

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 8. Typical Leakage Current

1000

100

0.1

0.01

0.001

0.0001

0.00001 80706050403020100

+150C

+25C

−55C

Figure 9. Zener Voltage versus Zener Current

(VZ Up to 12 V)

Figure 10. Zener Voltage versus Zener Current

(12 V to 91 V)

IR, LEAKAGE CURRENT (mA)

IZ, ZENER CURRENT (mA)

100

Figure 11. 8  20 ms Pulse Waveform

0020406080

t, TIME (ms)

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

HALF VALUE IRSM/2 @ 20 ms

% OF PEAK PULSE CURRENT

PEAK VALUE IRSM @ 8 ms

MMSZ52xxET1G Series, SZMMSZ52xxET1G Series

http://onsemi.com

PACKAGE DIMENSIONS

SOD−123

CASE 425−04

ISSUE G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

ÂÂÂÂ

DIM MIN NOM MAX

MILLIMETERS INCHES

A0.94 1.17 1.35 0.037

A1 0.00 0.05 0.10 0.000

b0.51 0.61 0.71 0.020

1.60

0.15

0.055D1.40 1.80

E2.54 2.69 2.84 0.100

---

3.68 0.140

L0.25

3.86

0.010

0.046

0.002

0.024

0.063

0.106

0.145

0.053

0.004

0.028

0.071

0.112

0.152

MIN NOM MAX

3.56

---

--- ---

0.006

--- ---

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 1:

PIN 1. CATHODE

2. ANODE

1.22

0.048

ÉÉ

0.91

0.036

2.36

0.093

4.19

0.165

ǒmm

inchesǓ

SCALE 10:1

ÉÉ

--- ---

q00

10 10

 

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MMSZ5221ET1/D

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