62613 TKIM TC-00002944/62712 TKIM/32509 MSIM TC-00001903/72606/ No.6645-1/6
33006PE MSIM TB-00002203/90100 TSIM TA-1982
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
June, 2013
3LP01C
P-Channel Small Signal MOSFET
–30V, –0.1A, 10.4Ω, Single CP
Features
• Low ON-resistance
•
High-speed switching
•
2.5V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage VDSS --30 V
Gate to Source Voltage VGSS ±10 V
Drain Current (DC) ID--0.1 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --0.4 A
Allowable Power Dissipation PD0.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
unit : mm (typ)
7013A-013
Ordering number : EN6645D
Ordering & Package Information
Device Package Shipping memo
3LP01C-TB-E CP
SC-59,TO-236,
SOT-23,TO-236AB
3,000
pcs./reel Pb-Free
3LP01C-TB-H CP
SC-59,TO-236,
SOT-23,TO-236AB
3,000
pcs./reel
Pb-Free
and
Halogen Free
Packing Type: TL Marking
Electrical Connection
1 : Gate
2 : Source
3 : Drain
CP
12
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95 0.4
0.1
0.5
0.5
3LP01C-TB-E
3LP01C-TB-H
TB XA
LOT No.
LOT No.
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
3LP01C
No.6645-2/6
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID= --1mA, VGS=0V --30 V
Zero-Gate Voltage Drain Current IDSS VDS= --30V, VGS=0V --1 μA
Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=--10V, ID= --100μA --0.4 --1.4 V
Forward Transfer Admittance | yfs |VDS=--10V, ID= --50mA 80 110 mS
Static Drain to Source On-State Resistance
RDS(on)1 ID= --50mA, VGS= --4V 8 10.4 Ω
RDS(on)2 ID= --30mA, VGS= --2.5V 11 15.4 Ω
RDS(on)3 ID= --1mA, VGS= --1.5V 27 54 Ω
Input Capacitance Ciss VDS= --10V, f=1MHz 7.5 pF
Output Capacitance Coss 5.7 pF
Reverse Transfer Capacitance Crss 1.8 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
24 ns
Rise Time tr 55 ns
Turn-OFF Delay Time td(off) 120 ns
Fall Time tf130 ns
Total Gate Charge Qg VDS= --10V, VGS= --10V, ID= --100mA 1.43 nC
Gate to Source Charge Qgs 0.18 nC
Gate to Drain “Miller” Charge Qgd 0.25 nC
Diode Forward Voltage VSD IS= --100mA, VGS=0V --0.83 --1.2 V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
0V
--4V
VIN
P.G 50Ω
G
D
ID= --50mA
RL=300Ω
VDD= --15V
VOUT
3LP01C
S
VIN
3LP01C
No.6645-3/6
0
0
--0.01
--0.02
--0.03
--0.04
--0.06
--0.07
--0.08
--0.09
--0.10
--0.4
--0.05
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
ID -- VDS
VGS= --1.5V
--3.5V
--6.0V
--2.0V
--4.0V
--3.0V
--2.5V
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5
0
--0.02
--0.04
--0.06
--0.08
--0.10
--0.12
--0.14
--0.16
--0.18
--0.20 ID -- VGS
VDS= --10V
IT00077 IT00078
Ta= --25°
C
25°C
75
°
C
Drain Current, ID -- A
Drain Current, ID -- A
Drain to Source Voltage, VDS -- V Gate to Source Voltage, VGS -- V
--60
4
2--40
6
--20
8
10
0
12
14
20 40
16
60
18
80 100 120 140 160
VGS= --2.5V, ID= --30mA
VGS= --4.0V, ID= --50mA
IT00083 IT00084
IT00081 IT00082
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
Drain Current, ID -- A
Forward T ransfer Admittance, | yfs | -- S
| yfs | -- ID
Drain Current, ID -- A
RDS(on) -- ID
Drain Current, ID -- mA
RDS(on) -- ID
--0.01
0.01 --0.1
1.0
7
5
3
2
7
5
3
2
0.1
327532
VDS= --10V
Ta= --25°C
25°C
75
°C
--0.01
1.0 --0.1
10
7
5
3
2
100
7
5
3
2
327532
VGS= --2.5V
--0.1 --1.0
1000
7
5
3
2
100
7
5
3
2
10 2323 57
VGS= --1.5V
--25°C
--25°C
25°C
Ta=75°C
Ta=75°C25°C
0
0--1 --2 --3
5
--4
10
--5
15
20
25
--6
30
--7 --8 --9 --10
RDS(on) -- VGS Ta=25°C
ID= --30mA --50mA
RDS(on) -- ID
IT00079 IT00080
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Gate to Source Voltage, VGS -- V Drain Current, ID -- A
--0.01
1.0 --0.1
23 57 23
100
7
5
3
2
10
7
5
3
2
VGS= --4V
Ta=75°C25°C
--25°C
3LP01C
No.6645-4/6
IT00085 --0.01 23 57
10
7
5
3
2
7
5
3
2
--0.1
1000
100
IT00086
VDD= --15V
VGS= --4V
tf
tr
td(off)
td(on)
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
--0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1
--0.01
--0.1
3
2
7
5
3
2
VGS=0V
--25°
C
25°C
Ta=75
°C
IT02382
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
0
0.30
0.15
0.20
0.10
0.05
0.25
0 40 120 1608020 100 14060
0
0
--1
--2
--3
--4
--5
--6
--7
--8
1.60.6 0.8 1.0 1.2 1.40.2 0.4
--9
--10 VDS= --10V
ID= --0.1A
0
1.0 --5
10
7
5
3
2
7
5
3
2
--10 --15
100
--20 --30--25
f=1MHz
IT00087 IT00088
Ciss
Coss
Crss
Drain to Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate to Sourse Voltage, VGS -- V
3LP01C
No.6645-5/6
Outline Drawing Land Pattern Example
3LP01C-TB-E, 3LP01C-TB-H
Mass (g) Unit
0.013
* For reference
mm Unit: mm
0.950.95
1.0
2.4
0.8
3LP01C
PS No.6645-6/6
Note on usage : Since the 3LP01C is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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