Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Avalanche Test BVDSS 650V
▼ Fast Switching Characteristic RDS(ON) 1Ω
▼ Simple Drive Requirement ID10A
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG Storage Temperature Range ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Parameter Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.4 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃/W
Data & specifications subject to change without notice
36
Linear Derating Factor 0.3
Parameter Rating
650
6.4
-55 to 150
AP2761I-A
10
±30
10
RoHS-compliant Product
200202074-1/4
65
37
-55 to 150
G
D
S
GDSTO-220CFM(I)
A
P2761 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 650 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 1 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=5A - 4.8 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=±30V - - ±100 nA
QgTotal Gate Charge3ID=10A - 53 - nC
Qgs Gate-Source Charge VDS=520V - 10 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 15 - nC
td(on) Turn-on Delay Time3VDD=320V - 16 - ns
trRise Time ID=10A - 20 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 82 - ns
tfFall Time RD=32Ω-36-ns
Ciss Input Capacitance VGS=0V - 2770 - pF
Coss Output Capacitance VDS=15V - 320 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3IS=10A, VGS=0V - - 1.5 V
trr Reverse Recovery Time IS=10A, VGS=0V, - 610 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 8.64 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
AP2761I-A
2/4
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
AP2761I-A
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
T j , Junction Temperature ( oC)
Normalized BVDSS (V)
0
2
4
6
8
10
12
14
0 5 10 15 20 25
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC
5.0V
VG=4.0V
10V
6.0V
0
2
4
6
8
0 5 10 15 20 25
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
VG=4.0V
4.5V
10V
5.0V
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=5A
VG=10V
0.01
0.1
1
10
100
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 25oCTj = 150 oC
1
2
3
4
5
-50 0 50 100 150
Tj , Junction Temperature ( o C)
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
AP2761I-A
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
4
8
12
16
0 20406080
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=10A
VDS =330V
VDS =410V
VDS =520V
1
100
10000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0.1
1
10
100
1 10 100 1000 10000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
S
in
g
le Puls
e
10us
100us
1ms
10ms
100ms
