PD- 95023C IRF7811WPbF HEXFET(R) Power MOSFET for DC-DC Converters * * * * * * N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses 100% Tested for Rg Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811WPbF has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811WPbF offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7811WPbF RDS(on) 9.0m QG 22nC Qsw 10.1nC Qoss 12nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source TA = 25C Current (VGS 4.5V) TL = 90C Pulsed Drain Current Power Dissipation TA = 25C Symbol IRF7811WPbF VDS 30 VGS 12 ID 14 IDM 109 13 PD TL = 90C 3.1 Units V A W 3.0 TJ, TSTG -55 to 150 C Continuous Source Current (Body Diode) IS 3.8 A Pulsed Source Current ISM 109 Parameter Maximum Junction-to-Ambient RJA Max. 40 Units C/W Maximum Junction-to-Lead RJL 20 C/W Junction & Storage Temperature Range Thermal Resistance www.irf.com 1 01/06/09 IRF7811WPbF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage BVDSS Static Drain-Source on Resistance RDS(on) Gate Threshold Voltage VGS(th) Drain-Source Leakage Current IDSS Min Typ Max Units 30 - - V 9.0 12 m 1.0 V 30 Current* 150 Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 15A VDS = VGS,ID = 250A VDS = 24V, VGS = 0 A VDS = 24V, VGS = 0, Tj = 100C Gate-Source Leakage Current IGSS 100 Total Gate Chg Cont FET QG 22 Total Gate Chg Sync FET QG 16.3 VGS = 5V, VDS< 100mV Pre-Vth Gate-Source Charge QGS1 3.5 VDS = 16V, ID = 15A, VGS = 5.0V Post-Vth Gate-Source Charge QGS2 1.2 Gate to Drain Charge QGD 8.8 Switch Chg(Qgs2 + Qgd) Qsw 10.1 Output Charge Qoss 12 Gate Resistance RG 2.0 Turn-on Delay Time td (on) 11 nA 33 VGS = 12V VGS=5.0V, ID=15A, VDS=16V nC VDS = 16V, VGS = 0 4.0 VDD = 16V, ID = 15A Rise Time tr 11 Turn-off Delay Time td (off) 29 ns Fall Time tf 9.9 Input Capacitance Ciss - 2335 - Output Capacitance Coss - 400 - Reverse Transfer Capacitance Crss - 119 - Typ Max Units 1.25 V VGS = 5.0V Clamped Inductive Load pF VDS = 16V, VGS = 0 Source-Drain Rating & Characteristics Parameter Min Diode Forward Voltage* VSD Reverse Recovery Charge Qrr Reverse Recovery Charge (with Parallel Schottky) Qrr(s) Notes: 45 nC Conditions IS = 15A, VGS = 0V di/dt ~ 700A/s VDS = 16V, VGS = 0V, IS = 15A 41 nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q OSS measured at VGS = 5.0V, IF = 15A. www.irf.com 2 IRF7811WPbF 6.0 ID = 15A VGS, Gate-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 ID= 15A VDS = 16V 4.0 2.0 0.0 80 100 120 140 160 0 TJ , Junction Temperature ( C) 8 12 16 20 24 QG, Total Gate Charge (nC) Fig 1. Normalized On-Resistance Vs. Temperature Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage 0.020 4000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 3000 C, Capacitance(pF) RDS(on) , Drain-to -Source On Resistance () 4 0.015 ID = 15A 0.010 Ciss 2000 1000 Coss 0.005 Crss 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS, Gate -to -Source Voltage (V) Fig 3. On-Resistance Vs. Gate Voltage www.irf.com 7.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage 3 IRF7811WPbF 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 100 TJ = 150 C 10 TJ = 25 C 1 V DS = 15V 20s PULSE WIDTH 0.1 2.5 3.0 3.5 4.0 4.5 TJ = 150 C 10 TJ = 25 C 1 0.1 0.4 5.0 V GS = 0 V 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) VGS , Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Source-Drain Diode Forward Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 1 0.02 t1 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 4 IRF7811WPbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H ;E >@ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & $ \ >@ ;F ;/ & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5) 026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 5 IRF7811WPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/2009 www.irf.com 6