1
Dual IGBTMOD™
NF-Series Module
100 Amperes / 1200 Volts
CM100DY-24NF
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A3.70 94.0
B1.89 48.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D3.15±0.01 80.0±0.25
E0.67 17.0
F0.91 23.0
G0.16 4.0
H0.71 18.0
J0.51 13.0
K0.47 12.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each t ra n -
sistor having a reverse-connected
super-fast recover y free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offer ing
simplified system assembly and
thermal management.
Features:
□Low Drive Power
□Low VCE(sat)
□Discrete Super-Fast Recover y
Free-Wheel Diode
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□AC Motor Control
□UPS
□Batter y Powered Supplies
Ordering Information:
Example: Select the complete
par t module number you desire
from the table below -i.e.
CM100DY-24NF is a 1200V
(VCES), 100 Ampere Dual
IGBTMOD™ Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 100 24
Dimensions Inches Millimeters
L0.26 Dia. Dia. 6.5
MM5 Metric M5
N0.79 20.0
P0.63 16.0
Q0.28 7.0
R0.83 21.2
S0.30 7.5
T0.02 0.5
U0.110 2.8
V0.16 4.0
A
EE
FF
BN
L
(2 PLACES) DM NUTS
(3 PLACES)
J
G
G
H
KKK
PPP T THICK
U WIDTH
QQ
V
C
S
R
G2
E2
E1
G1
C1E2C2E1
TC MEASURED POINT
(BASEPLATE)
LABEL
C2E1 E2 C1
G2
E2
E1
G1
2
CM100DY-24NF
Dual IGBTMOD™ NF-Series Module
100 Amperes / 1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM100DY-24NF Units
Junction Temperature Tj–40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E Short) VCES 1200 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current*** (DC, TC' = 113°C) IC 100 Amperes
Peak Collector Current ICM 200* Amperes
Emitter Current** (TC = 25°C) IE100 Amperes
Peak Emitter Current** IEM 200* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC650 Watts
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight —310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold V oltage VGE(th) IC = 10mA, VCE = 10V 6.0 7.0 8.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C—1.8 2.5 Volts
IC = 100A, VGE = 15V, Tj = 125°C—2.0 — Volts
Total Gate Charge QGVCC = 600V, IC = 100A, VGE = 15V — 675 — nC
Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V — — 3.2 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies —— 23nf
Output Capacitance Coes VCE = 10V, VGE = 0V — — 2 nf
Re verse Transf er Capacitance Cres —— 0.45 nf
Inductive Turn-on Delay Time td(on) ——120 ns
Load Rise Time trVCC = 600V, IC = 100A, — — 80 ns
Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 3.1Ω,——450 ns
Time F all Time tfInductive Load — — 350 ns
Diode Reverse Recovery Time** trr Switching Operation, — — 150 ns
Diode Reverse Recovery Charge** Qrr IE = 100A — 5.0 — µC
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***Tc' measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DY-24NF
Dual IGBTMOD™ NF-Series Module
100 Amperes / 1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)QPer IGBT 1/2 Module, TC Reference — — 0.19 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)DPer FWDi 1/2 Module, TC Reference — — 0.35 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, — — 0.13 °C/W
TC Reference Point Under Chips
Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.07 — °C/W
External Gate Resistance RG3.1 — 31 Ω
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
102
101
100
10-1 101
01 3425
101
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
6810 1412 16 18 20
8
6
4
2
0
Tj = 25°C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
3
050 150
2
1
0200
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 25°C
VGE = 0V
Cies
Coes
Cres
IC = 200A
IC = 100A
IC = 40A
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
50
0
VGE =
20V
10
11
12
15
13
9
Tj = 25
o
C
100
150
200
100
10
-1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
2
10
2
10
0
10
1
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
tf
103
4
CM100DY-24NF
Dual IGBTMOD™ NF-Series Module
100 Amperes / 1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
0
10
-5
10
-4
10
-3
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
¥ (NORMALIZED VALUE)
Single Pulse
T
C
= 25°C
Per Unit Base =
R
th(j-c)
=
0.19°C/W
(IGBT)
R
th(j-c)
=
0.35°C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c')
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE VS. VGE
20
0
16
12
8
4
0
200 400 600 1000800
V
CC
= 600V
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
2
10
1
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 25°C
Inductive Load
V
CC
= 400V
I
C
= 100A
10
3
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING LOSS, E
SW( on)
, E
SW( off)
, (mJ/PULSE)
10
2
10
1
10
2
10
1
10
0
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive Load
C Snubber at Bus
V
CC
= 600V
V
GE
= ±15V
I
C
= 100A
T
j
= 125°C
Inductive Load
C Snubber at Bus
10
3
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
GATE RESISTANCE, R
G
, (Ω)
SWITCHING LOSS, E
SW( on)
, E
SW( off)
, (mJ/PULSE)
10
2
10
0
10
1
10
1
10
0
10
2
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
E
SW(on)
E
SW(off)
I
rr
t
rr
E
SW(on)
E
SW(off)
