© 2003 IXYS All rights reserved 1 - 2
HiPerFREDTM Epitaxial Diode
with soft recovery
Features
International standard package
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
miniBLOC, SOT-227 B
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 2x 91-06A
IFAV = 2x 90 A
VRRM = 600 V
trr = 35 ns
VRSM VRRM Type
V V
600 600 DSEP 2x 91-06A
Symbol Conditions Maximum Ratings
IFRMS 100 A
IFAVM TC = 55°C; rectangular, d = 0.5 90 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 1000 A
EAS TVJ = 25°C; non-repetitive 0.4 mJ
IAS = 2 A; L = 180 µH
IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
Ptot TC = 25°C 200 W
VISOL 50/60 Hz, RMS 2500 V~
IISOL £ 1 mA
Mdmounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.
Weight typical 30 g
Symbol Conditions Characteristic Values
typ. max.
IRTVJ = 25°C VR= VRRM 1mA
TVJ = 150°C VR= VRRM 4mA
VFIF = 90 A; TVJ = 125°C 1.52 V
TVJ = 25°C 2.05 V
RthJC 0.6 K/W
RthCH 0.1 K/W
trr IF = 1 A; -di/dt = 400 A/ms; 35 ns
VR = 30 V; TVJ = 25°C
IRM VR = 100 V; IF = 200 A; -diF/dt = 100 A/ms 7.7 A
TVJ = 100°C
329
6
© 2003 IXYS All rights reserved 2 - 2
DSEP 2x 91-06A
200 600 10000 400 800
90
100
110
120
130
140
150
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C-diF/dt
ts
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
VFR
diF/dt
V
200 600 10000 400 800
0
20
40
60
100 1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
012
0
25
50
75
100
125
150
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/
m
s
A
V
µC
A/
m
sA/
m
s
trr
ns
tfr
A/
m
s
µs
DSEP 2x91-06A
ZthJC
IF= 180A
IF= 90A
IF= 45A
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 90A
Fig. 3 Peak reverse current IRM
versus -diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 1 Forward current IF versus VF
TVJ= 100°C
VR = 300V TVJ= 100°C
VR = 300V
IF= 180A
IF= 90A
IF= 45A
Qr
IRM
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
IF= 180A
IF= 90A
IF= 45A
tfr VFR
Fig. 7 Transient thermal resistance junction to case
329
TVJ=150°C
TVJ=100°C
TVJ= 25°C
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.212 0.0055
2 0.248 0.0092
3 0.063 0.0007
4 0.077 0.0391
NOTE: Fig. 2 to Fig. 6 shows typical values