TLUG / O / Y240.
Document Number 83053
Rev. 1.9, 18-May-05
Vishay Semiconductors
www.vishay.com
1
19229
Universal LED, ∅ 1.8 mm Tinted Diffused Miniplast Package
Features
• Three colors
• For DC and pulse operation
• Luminous intensity categorized
• End-to-end stackable in centre-to-centre
spacing of 0.1" (2.54 mm)
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
General indicating and lighting purposes
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLUO240. , TLUY240. , TLUG240.
Part Color, Luminous Intensity Angle of Half Intensity (±ϕ)Technology
TLUO2400 Red, IV > 1.6 mcd 20 ° GaAsP on GaP
TLUO2401 Red, IV = (4 to 20) mcd 20 ° GaAsP on GaP
TLUY2400 Yellow, IV > 1 mcd 20 ° GaAsP on GaP
TLUY2401 Yellow, IV = (2.5 to 12.5) mcd 20 ° GaAsP on GaP
TLUG2400 Green, IV > 1.6 mcd 20 ° GaP on GaP
TLUG2401 Green, IV = (4 to 20) mcd 20 ° GaP on GaP
Parameter Test condition Part Symbol Value Unit
Reverse voltage VR6V
DC Forward current TLUO2400 IF30 mA
TLUY2400 IF30 mA
TLUG2400 IF30 mA
Surge forward current tp ≤ 10 µsI
FSM 1A
Power dissipation Tamb ≤ 55 °C TLUO2400 PV100 mW
TLUY2400 PV100 mW
TLUG2400 PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 3 s, 2 mm from body Tsd 260 °C
t ≤ 5 s, 4 mm from body Tsd 260 °C
e4
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Document Number 83053
Rev. 1.9, 18-May-05
TLUG / O / Y240.
Vishay Semiconductors
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLUO240.
1) in one Packing Unit IVmin/IVmax ≤ 0.5
Yellow
TLUY240.
1) in one Packing Unit IVmin/IVmax ≤ 0.5
Thermal resistance junction/
ambient
TLUO2400 RthJA 450 K/W
TLUY2400 RthJA 450 K/W
TLUG2400 RthJA 450 K/W
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 10 mA TLUO2400 IV1.6 2 mcd
TLUO2401 IV4520mcd
Dominant wavelength IF = 10 mA λd612 625 nm
Peak wavelength IF = 10 mA λp630 nm
Angle of half intensity IF = 10 mA ϕ± 20 deg
Forward voltage IF = 20 mA VF23V
Reverse voltage IR = 10 µAV
R615 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 10 mA TLUY2400 IV14 mcd
TLUY2401 IV2.5 8 12.5 mcd
Dominant wavelength IF = 10 mA λd581 594 nm
Peak wavelength IF = 10 mA λp585 nm
Angle of half intensity IF = 10 mA ϕ± 20 deg
Forward voltage IF = 20 mA VF2.4 3 V
Reverse voltage IR = 10 µAV
R615 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Parameter Test condition Part Symbol Value Unit
TLUG / O / Y240.
Document Number 83053
Rev. 1.9, 18-May-05
Vishay Semiconductors
www.vishay.com
3
Green
TLUG240.
1) in one Packing Unit IVmin/IVmax ≤ 0.5
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 10 mA TLUG2400 IV1.6 5 mcd
TLUG2401 IV41220mcd
Dominant wavelength IF = 10 mA λd562 575 nm
Peak wavelength IF = 10 mA λp565 nm
Angle of half intensity IF = 10 mA ϕ± 20 deg
Forward voltage IF = 20 mA VF2.4 3 V
Reverse voltage IR = 10 µAV
R615 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
0
20
40
60
80
100
0 20406080100
T
amb
- Ambient Temperature ( °C)
18840
P - Power Dissipation ( mW )
V
Red,
Yellow, Green
0
5
10
15
20
25
30
35
40
0 102030405060708090100
T
amb
- Ambient Temperature ( °C)
18841
I - Forward Current ( mA )
F
Red, Yellow, Green
Figure 3. Forward Current vs. Pulse Length
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
0.01 0.1 1 10
1
10
100
1000
10000
tp- Pulse Length ( ms )
100
95 10093
I - Forward Current ( mA )
F
Green, Yellow
Orange Red
t
p
/T= 0.01 0.02
0.05
0.1
0.2
1
0.5
Tamb 55 °C
≤
0.4 0.2 0 0.2 0.4 0.6
95 10094
0.6
0.9
0.8
0°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
I - Relative Luminous Intensity
v rel
°
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Document Number 83053
Rev. 1.9, 18-May-05
TLUG / O / Y240.
Vishay Semiconductors
Figure 5. Forward Current vs. Forward Voltage
Figure 6. Forward Current vs. Forward Voltage
Figure 7. Rel. Luminous Intensity vs. Ambient Temperature
0.1
1
10
100
012345
V
F
- Forward Voltage(V)
16634
F
I - Forward Current ( mA )
0.1
1
10
100
1000
95 10086
V
F
- Forward Voltage(V)
I - Forward Current ( mA )
F
tp/T = 0.001
tp=10µs
Red
1086420
0
0.4
0.8
1.2
1.6
95 10087
I - Relative Luminous Intensity
v rel
Red
IF=10mA
Tamb - Ambient Temperature (°C)
20 40 60 800 100
Figure 8. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 9. Relative Luminous Intensity vs. Forward Current
Figure 10. Relative Intensity vs. Wavelength
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10088
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I - Relative Luminous Intensity
v rel
2.0
Red
IFAV = 10 mA, const.
I
F
- Forward Current ( mA )
100
Red
0.01
0.1
1
10
95 10089
I - Relative Luminous Intensity
v rel
101
590 610 630 650 670 690
λ- Wavelength ( nm )
Red
0
0.2
0.4
0.6
0.8
1.2
95 10090
I - Relative Luminous Intensity
v rel
1.0
TLUG / O / Y240.
Document Number 83053
Rev. 1.9, 18-May-05
Vishay Semiconductors
www.vishay.com
5
Figure 11. Forward Current vs. Forward Voltage
Figure 12. Rel. Luminous Intensity vs. Ambient Temperature
Figure 13. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
0.1
1
10
100
1000
1086420
95 10030
VF- Forward Voltage(V)
I - Forward Current ( mA )
F
Yellow
tp/T = 0.001
tp=10µs
0
0
0.4
0.8
1.2
1.6
95 10031
20 40 60 80 100
I - Relative Luminous Intensity
v rel
Tamb - Ambient Temperature ( °C)
Yellow
IF=10mA
Yellow
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10260
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I - Relative Luminous Intensity
v rel
2.0
Figure 14. Relative Luminous Intensity vs. Forward Current
Figure 15. Relative Intensity vs. Wavelength
Figure 16. Forward Current vs. Forward Voltage
Yellow
IF- Forward Current ( mA )
100
0.1
1
10
95 10033
I - Relative Luminous Intensity
v rel
101
0.01
550 570 590 610 630
0
0.2
0.4
0.6
0.8
1.2
650
95 10039
λ-- Wavelength ( nm )
1.0
Yellow
I - Relative Luminous Intensity
Vrel
0.1
1
10
100
1000
1086420
95 10034
VF- Forward Voltage(V)
I - Forward Current ( mA )
F
Green
tp/T = 0.001
tp=10µs
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Document Number 83053
Rev. 1.9, 18-May-05
TLUG / O / Y240.
Vishay Semiconductors
Figure 17. Rel. Luminous Intensity vs. Ambient Temperature
Figure 18. Specific Luminous Intensity vs. Forward Current
Figure 19. Relative Luminous Intensity vs. Forward Current
0
0.4
0.8
1.2
1.6
95 10035
I - Relative Luminous Intensity
v rel
Green
IF=10mA
Tamb - Ambient Temperature (°C)
20 40 60 800 100
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10263
500
v rel
2.0
Green
I - Specific Luminous Intensity
IF(mA)
0.5 0.2 0.1 0.05 0.021 tp/T
IF- Forward Current ( mA )
100
Green
0.1
1
10
95 10037
I - Relative Luminous Intensity
v rel
101
Figure 20. Relative Intensity vs. Wavelength
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
95 10038
λ-- Wavelength ( nm )
1.0
Green
I - Relative Luminous Intensity
Vrel
TLUG / O / Y240.
Document Number 83053
Rev. 1.9, 18-May-05
Vishay Semiconductors
www.vishay.com
7
Package Dimensions in mm
95 11262
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8
Document Number 83053
Rev. 1.9, 18-May-05
TLUG / O / Y240.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
