1Characteristics
Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave)
TO-220AB, D²PAK Tc = 105 °C
12 A
TO-220AB Ins. Tc = 90 °C
ITSM
Non repetitive surge peak on-state current (full cycle, Tj
initial = 25 °C)
f = 50 Hz t = 20 ms 120
A
f = 60 Hz tp = 16.7 ms 126
I2t I2t value for fusing tp = 10 ms 78 A2s
dl/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤
100 ns f = 120 Hz Tj = 125 °C 50 A/µs
VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C VDRM / VRRM +
100
V
IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A
PG(AV) Average gate power dissipation Tj = 125 °C 1 W
Tstg Storage junction temperature range -40 to +150 °C
TjOperating junction temperature range -40 to +125 °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™ and logic level
(3 quadrants)
Symbol Parameter Quadrant
T1205
BTB12-TW
BTA12-TW
T1210
BTB12-SW
BTA12-SW
T1235
BTB12-
CW
BTA12-CW
T1250
BTB12-
BW
BTA12-BW
Unit
IGT (1)
VD = 12 V, RL = 30 Ω
I - II - III Max. 5 10 35 50 mA
VGT I - II - III Max. 1.3 V
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C I - II - III Min. 0.2 V
IH (2) IT = 100 mA I - II - III Max. 10 15 35 50 mA
IL (2) IG = 1.2 x IGT
I - III Max. 10 25 50 70
mA
II Max. 15 30 60 80
dV/dt (2) VD = 67% VDRM, gate open, Tj = 125 °C Max. 20 40 500 1000 V/µs
(dl/dt)c (2)
(dV/dt)c = 0.1 V/µs, Tj = 125 °C Min. 3.5 6.5
A/ms
(dV/dt)c = 10 V/µs, Tj = 125 °C Min. 1.0 2.9
Without snubber, Tj = 125 °C Min. 6.5 12
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
BTA12, BTB12, T1205, T1210, T1235, T1250
Characteristics
DS2115 - Rev 12 page 2/16