M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages - VCC = 2.7V to 3.6V for Program, Erase and Read - VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME - 10s per Byte/Word typical 67 MEMORY BLOCKS TSOP48 (N) 12 x 20mm - 1 Boot Block (Top or Bottom Location) - 2 Parameter and 64 Main Blocks PROGRAM/ERASE CONTROLLER FBGA - Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend TFBGA63 (ZA) 63 ball array UNLOCK BYPASS PROGRAM COMMAND - Faster Production/Batch Programming VPP/WP PIN for FAST PROGRAM and WRITE PROTECT TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE - 64 bit Security Code LOW POWER CONSUMPTION - Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Top Device Code M29W320DT: 22CAh - Bottom Device Code M29W320DB: 22CBh May 2003 1/44 M29W320DT, M29W320DB TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. TSOP Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4. TFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 5. Block Addresses (x8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 6. Block Addresses (x16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Address Inputs (A0-A20). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Data Inputs/Outputs (DQ0-DQ7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Data Inputs/Outputs (DQ8-DQ14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Data Input/Output or Address Input (DQ15A-1).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 VPP/Write Protect (VPP/WP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Reset/Block Temporary Unprotect (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Ready/Busy Output (RB). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Byte/Word Organization Select (BYTE). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 VCC Supply Voltage (2.7V to 3.6V).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 VSS Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Bus Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Automatic Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Special Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Block Protect and Chip Unprotect. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Block Protect and Chip Unprotect. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 2. Bus Operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 3. Bus Operations, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Read/Reset Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Auto Select Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Unlock Bypass Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Unlock Bypass Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Unlock Bypass Reset Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/44 M29W320DT, M29W320DB Chip Erase Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Block Erase Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Erase Suspend Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Erase Resume Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Table 4. Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 5. Commands, 8-bit mode, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Table 6. Program, Erase Times and Program, Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . 19 STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Data Polling Bit (DQ7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Toggle Bit (DQ6).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Error Bit (DQ5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Erase Timer Bit (DQ3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Alternative Toggle Bit (DQ2).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 7. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 7. Data Polling Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 8. Data Toggle Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Table 8. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Table 9. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 9. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 10. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Table 10. Device Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Table 11. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 11. Read Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Table 12. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Figure 12. Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Table 13. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 13. Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 14. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 14. Reset/Block Temporary Unprotect AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Table 15. Reset/Block Temporary Unprotect AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Figure 15. Accelerated Program Timing Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Figure 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline . 29 Figure 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline . 29 Figure 17. TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Outline . . . . . . . . . . 30 Table 17. TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Mechanical Data . . . 30 PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 18. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 3/44 M29W320DT, M29W320DB APPENDIX A. BLOCK ADDRESS TABLE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 19. Top Boot Block Addresses, M29W320DT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 20. Bottom Boot Block Addresses, M29W320DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 APPENDIX B. COMMON FLASH INTERFACE (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 21. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 22. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 23. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 24. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Table 25. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Table 26. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 APPENDIX C. BLOCK PROTECTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Programmer Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 In-System Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Table 27. Programmer Technique Bus Operations, BYTE = V IH or VIL . . . . . . . . . . . . . . . . . . . . . 38 Figure 18. Programmer Equipment Block Protect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Figure 19. Programmer Equipment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Figure 20. In-System Equipment Block Protect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Figure 21. In-System Equipment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Table 28. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 4/44 M29W320DT, M29W320DB SUMMARY DESCRIPTION The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The blocks in the memory are asymmetrically arranged, see Figures 5 and 6 and Tables 19 and 20. The first or last 64 Kbytes have been divided into four additional blocks. The 16 Kbyte Boot Block can be used for small initialization code to start the microprocessor, the two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining 32 Kbyte is a small Main Block where the application may be stored. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. The memory is offered in TSOP48 (12 x 20mm) and TFBGA63 (7x11mm, 0.8mm pitch) packages. The memory is supplied with all the bits erased (set to 1). Figure 2. Logic Diagram Table 1. Signal Names VCC VPP/WP 21 15 A0-A20 DQ0-DQ14 DQ15A-1 W E M29W320DT M29W320DB G RB RP BYTE VSS AI90189B A0-A20 Address Inputs DQ0-DQ7 Data Inputs/Outputs DQ8-DQ14 Data Inputs/Outputs DQ15A-1 Data Input/Output or Address Input E Chip Enable G Output Enable W Write Enable RP Reset/Block Temporary Unprotect RB Ready/Busy Output BYTE Byte/Word Organization Select VCC Supply Voltage VPP/WP VPP/Write Protect VSS Ground NC Not Connected Internally 5/44 M29W320DT, M29W320DB Figure 3. TSOP Connections A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 W RP NC VPP/WP RB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 48 12 M29W320DT 37 13 M29W320DB 36 24 25 AI90190 6/44 A16 BYTE VSS DQ15A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 M29W320DT, M29W320DB Figure 4. TFBGA Connections (Top view through package) 1 2 A NC(1) NC(1) B NC(1) 3 4 5 6 7 8 NC(1) NC(1) NC(1) NC(1) C A3 A7 RB W A9 A13 D A4 A17 VPP/WP RP A8 A12 E A2 A6 A18 NC A10 A14 F A1 A5 A20 A19 A11 A15 G A0 DQ0 DQ2 DQ5 DQ7 A16 H E DQ8 DQ10 DQ12 DQ14 BYTE J G DQ9 DQ11 VCC DQ13 DQ15 A-1 K VSS DQ1 DQ3 DQ4 DQ6 VSS L NC(1) NC(1) NC(1) NC(1) M NC(1) NC(1) NC(1) NC(1) AI05525B Note: 1. Balls are shorted together via the substrate but not connected to the die. 7/44 M29W320DT, M29W320DB Figure 5. Block Addresses (x8) M29W320DT Top Boot Block Addresses (x8) M29W320DB Bottom Boot Block Addresses (x8) 3FFFFFh 3FFFFFh 16 KByte 64 KByte 3FC000h 3FBFFFh 3F0000h 3EFFFFh 8 KByte 64 KByte 3FA000h 3F9FFFh 3E0000h Total of 63 64 KByte Blocks 8 KByte 3F8000h 3F7FFFh 32 KByte 3F0000h 3EFFFFh 01FFFFh 64 KByte 64 KByte 3E0000h 010000h 00FFFFh 32 KByte Total of 63 64 KByte Blocks 01FFFFh 008000h 007FFFh 8 KByte 006000h 005FFFh 64 KByte 8 KByte 004000h 003FFFh 010000h 00FFFFh 64 KByte 000000h 16 KByte 000000h AI90192 Note: Also see Appendix A, Tables 19 and 20 for a full listing of the Block Addresses. 8/44 M29W320DT, M29W320DB Figure 6. Block Addresses (x16) M29W320DT Top Boot Block Addresses (x16) M29W320DB Bottom Boot Block Addresses (x16) 1FFFFFh 1FFFFFh 8 KWord 32 KWord 1FE000h 1FDFFFh 1F8000h 1F7FFFh 4 KWord 32 KWord 1FD000h 1FCFFFh 1F0000h Total of 63 32 KWord Blocks 4 KWord 1FC000h 1FBFFFh 16 KWord 1F8000h 1F7FFFh 00FFFFh 32 KWord 32 KWord 1F0000h 008000h 007FFFh 16 KWord Total of 63 32 KWord Blocks 00FFFFh 004000h 003FFFh 4 KWord 003000h 002FFFh 32 KWord 4 KWord 002000h 001FFFh 008000h 007FFFh 32 KWord 000000h 8 KWord 000000h AI90193 Note: Also see Appendix A, Tables 19 and 20 for a full listing of the Block Addresses. 9/44 M29W320DT, M29W320DB SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connected to this device. Address Inputs (A0-A20). The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine. Data Inputs/Outputs (DQ0-DQ7). The Data I/O outputs the data stored at the selected address during a Bus Read operation. During Bus Write operations they represent the commands sent to the Command Interface of the internal state machine. Data Inputs/Outputs (DQ8-DQ14). The Data I/O outputs the data stored at the selected address during a Bus Read operation when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high impedance. During Bus Write operations the Command Register does not use these bits. When reading the Status Register these bits should be ignored. Data Input/Output or Address Input (DQ15A-1). When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14). When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A-1 Low will select the LSB of the Word on the other addresses, DQ15A-1 High will select the MSB. Throughout the text consider references to the Data Input/Output to include this pin when BYTE is High and references to the Address Inputs to include this pin when BYTE is Low except when stated explicitly otherwise. Chip Enable (E). The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to be performed. When Chip Enable is High, V IH, all other pins are ignored. Output Enable (G). The Output Enable, G, controls the Bus Read operation of the memory. Write Enable (W). The Write Enable, W, controls the Bus Write operation of the memory's Command Interface. VPP/Write Protect (VPP/WP). The VPP/Write Protect pin provides two functions. The VPP function allows the memory to use an external high voltage power supply to reduce the time required for Unlock Bypass Program operations. The Write Protect function provides a hardware method of protecting the 16 Kbyte Boot Block. The VPP/Write Protect pin must not be left floating or unconnected. When V PP/Write Protect is Low, VIL, the memory protects the 16 Kbyte Boot Block; Program and Erase operations in this block are ignored while VPP/Write Protect is Low. 10/44 When VPP/Write Protect is High, VIH, the memory reverts to the previous protection status of the 16 Kbyte boot block. Program and Erase operations can now modify the data in the 16 Kbyte Boot Block unless the block is protected using Block Protection. When V PP/Write Protect is raised to VPP the memory automatically enters the Unlock Bypass mode. When V PP/Write Protect returns to VIH or VIL normal operation resumes. During Unlock Bypass Program operations the memory draws IPP from the pin to supply the programming circuits. See the description of the Unlock Bypass command in the Command Interface section. The transitions from VIH to V PP and from V PP to VIH must be slower than tVHVPP, see Figure 15. Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the memory may be left in an indeterminate state. A 0.1F capacitor should be connected between the VPP/Write Protect pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during Unlock Bypass Program, I PP. Reset/Block Temporary Unprotect (RP). The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. Note that if VPP/WP is at V IL, then the 16 KByte outermost boot block will remain protect even if RP is at VID. A Hardware Reset is achieved by holding Reset/ Block Temporary Unprotect Low, V IL, for at least tPLPX. After Reset/Block Temporary Unprotect goes High, V IH, the memory will be ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last. See the Ready/Busy Output section, Table 15 and Figure 14, Reset/ Temporary Unprotect AC Characteristics for more details. Holding RP at V ID will temporarily unprotect the protected Blocks in the memory. Program and Erase operations on all blocks will be possible. The transition from VIH to VID must be slower than tPHPHH. Ready/Busy Output (RB). The Ready/Busy pin is an open-drain output that can be used to identify when the device is performing a Program or Erase operation. During Program or Erase operations Ready/Busy is Low, V OL. Ready/Busy is high-impedance during Read mode, Auto Select mode and Erase Suspend mode. M29W320DT, M29W320DB Note that if VPP/WP is at VIL, then the 16 KByte outermost boot block will remain protect even if RP is at VID. After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy becomes high-impedance. See Table 15 and Figure 14, Reset/Temporary Unprotect AC Characteristics. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor. A Low will then indicate that one, or more, of the memories is busy. Byte/Word Organization Select (BYTE). The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in x8 mode, when it is High, V IH, the memory is in x16 mode. VCC Supply Voltage (2.7V to 3.6V). VCC provides the power supply for all operations (Read, Program and Erase). The Command Interface is disabled when the V CC Supply Voltage is less than the Lockout Voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data during power up, power down and power surges. If the Program/ Erase Controller is programming or erasing during this time then the operation aborts and the memory contents being altered will be invalid. A 0.1F capacitor should be connected between the V CC Supply Voltage pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during Program and Erase operations, ICC3. VSS Ground. VSS is the reference for all voltage measurements. 11/44 M29W320DT, M29W320DB BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See Tables 2 and 3, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. Bus Read. Bus Read operations read from the memory cells, or specific registers in the Command Interface. A valid Bus Read operation involves setting the desired address on the Address Inputs, applying a Low signal, V IL, to Chip Enable and Output Enable and keeping Write Enable High, VIH. The Data Inputs/Outputs will output the value, see Figure 11, Read Mode AC Waveforms, and Table 12, Read AC Characteristics, for details of when the output becomes valid. Bus Write. Bus Write operations write to the Command Interface. A valid Bus Write operation begins by setting the desired address on the Address Inputs. The Address Inputs are latched by the Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH, during the whole Bus Write operation. See Figures 12 and 13, Write AC Waveforms, and Tables 13 and 14, Write AC Characteristics, for details of the timing requirements. Output Disable. The Data Inputs/Outputs are in the high impedance state when Output Enable is High, V IH. Standby. When Chip Enable is High, VIH, the memory enters Standby mode and the Data In- 12/44 puts/Outputs pins are placed in the high-impedance state. To reduce the Supply Current to the Standby Supply Current, ICC2, Chip Enable should be held within VCC 0.2V. For the Standby current level see Table 11, DC Characteristics. During program or erase operations the memory will continue to use the Program/Erase Supply Current, ICC3, for Program or Erase operations until the operation completes. Automatic Standby. If CMOS levels (VCC 0.2V) are used to drive the bus and the bus is inactive for 300ns or more the memory enters Automatic Standby where the internal Supply Current is reduced to the Standby Supply Current, ICC2. The Data Inputs/Outputs will still output data if a Bus Read operation is in progress. Special Bus Operations Additional bus operations can be performed to read the Electronic Signature and also to apply and remove Block Protection. These bus operations are intended for use by programming equipment and are not usually used in applications. They require VID to be applied to some pins. Electronic Signature. The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying the signals listed in Tables 2 and 3, Bus Operations. Block Protect and Chip Unprotect. Each block can be separately protected against accidental Program or Erase. The whole chip can be unprotected to allow the data inside the blocks to be changed. Block Protect and Chip Unprotect operations are described in Appendix C. M29W320DT, M29W320DB Table 2. Bus Operations, BYTE = V IL Operation E G Address Inputs DQ15A-1, A0-A20 W Data Inputs/Outputs DQ14-DQ8 DQ7-DQ0 Bus Read VIL VIL VIH Cell Address Hi-Z Data Output Bus Write VIL VIH VIL Command Address Hi-Z Data Input X VIH VIH X Hi-Z Hi-Z Standby VIH X X X Hi-Z Hi-Z Read Manufacturer Code VIL VIL VIH A0 = VIL, A1 = VIL, A9 = VID, Others VIL or VIH Hi-Z 20h Read Device Code VIL VIL VIH A0 = VIH, A1 = VIL, A9 = VID, Others VIL or VIH Hi-Z CAh (M29W320DT) CBh (M29W320DB) Output Disable Note: X = VIL or VIH. Table 3. Bus Operations, BYTE = V IH Address Inputs A0-A20 Data Inputs/Outputs DQ15A-1, DQ14-DQ0 E G W Bus Read VIL VIL VIH Cell Address Bus Write VIL VIH VIL Command Address X VIH VIH X Hi-Z Standby VIH X X X Hi-Z Read Manufacturer Code VIL VIL VIH A0 = VIL, A1 = VIL, A9 = VID, Others VIL or VIH 0020h Read Device Code VIL VIL VIH A0 = VIH, A1 = VIL, A9 = VID, Others VIL or VIH 22CAh (M29W320DT) 22CBh (M29W320DB) Operation Output Disable Data Output Data Input Note: X = VIL or VIH. 13/44 M29W320DT, M29W320DB COMMAND INTERFACE All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result in the memory returning to Read mode. The long command sequences are imposed to maximize data security. The address used for the commands changes depending on whether the memory is in 16-bit or 8bit mode. See either Table 4, or 5, depending on the configuration that is being used, for a summary of the commands. Read/Reset Command. The Read/Reset command returns the memory to its Read mode where it behaves like a ROM or EPROM, unless otherwise stated. It also resets the errors in the Status Register. Either one or three Bus Write operations can be used to issue the Read/Reset command. The Read/Reset Command can be issued, between Bus Write cycles before the start of a program or erase operation, to return the device to read mode. Once the program or erase operation has started the Read/Reset command is no longer accepted. The Read/Reset command will not abort an Erase operation when issued while in Erase Suspend. Auto Select Command. The Auto Select command is used to read the Manufacturer Code, the Device Code and the Block Protection Status. Three consecutive Bus Write operations are required to issue the Auto Select command. Once the Auto Select command is issued the memory remains in Auto Select mode until a Read/Reset command is issued. Read CFI Query and Read/ Reset commands are accepted in Auto Select mode, all other commands are ignored. From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation with A0 = V IL and A1 = VIL. The other address bits may be set to either V IL or VIH. The Manufacturer Code for STMicroelectronics is 0020h. The Device Code can be read using a Bus Read operation with A0 = VIH and A1 = VIL. The other address bits may be set to either V IL or VIH. The Device Code for the M29W320DT is 22CAh and for the M29W320DB is 22CBh. The Block Protection Status of each block can be read using a Bus Read operation with A0 = V IL , A1 = V IH, and A12-A20 specifying the address of the block. The other address bits may be set to either V IL or VIH. If the addressed block is protected then 01h is output on Data Inputs/Outputs DQ0DQ7, otherwise 00h is output. Read CFI Query Command. The Read CFI Query Command is used to read data from the Common Flash Interface (CFI) Memory Area. This 14/44 command is valid when the device is in the Read Array mode, or when the device is in Autoselected mode. One Bus Write cycle is required to issue the Read CFI Query Command. Once the command is issued subsequent Bus Read operations read from the Common Flash Interface Memory Area. The Read/Reset command must be issued to return the device to the previous mode (the Read Array mode or Autoselected mode). A second Read/ Reset command would be needed if the device is to be put in the Read Array mode from Autoselected mode. See Appendix B, Tables 21, 22, 23, 24, 25 and 26 for details on the information contained in the Common Flash Interface (CFI) memory area. Program Command. The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and data in the internal state machine and starts the Program/Erase Controller. If the address falls in a protected block then the Program command is ignored, the data remains unchanged. The Status Register is never read and no error condition is given. During the program operation the memory will ignore all commands. It is not possible to issue any command to abort or pause the operation. Typical program times are given in Table 6. Bus Read operations during the program operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the program operation has completed the memory will return to the Read mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. Note that the Program command cannot change a bit set at '0' back to '1'. One of the Erase Commands must be used to set all the bits in a block or in the whole memory from '0' to '1'. Unlock Bypass Command. The Unlock Bypass command is used in conjunction with the Unlock Bypass Program command to program the memory. When the cycle time to the device is long (as with some EPROM programmers) considerable time saving can be made by using these commands. Three Bus Write operations are required to issue the Unlock Bypass command. Once the Unlock Bypass command has been issued the memory will only accept the Unlock By- M29W320DT, M29W320DB pass Program command and the Unlock Bypass Reset command. The memory can be read as if in Read mode. The memory offers accelerated program operations through the VPP/Write Protect pin. When the system asserts V PP on the VPP/Write Protect pin, the memory automatically enters the Unlock Bypass mode. The system may then write the twocycle Unlock Bypass program command sequence. The memory uses the higher voltage on the VPP/Write Protect pin, to accelerate the Unlock Bypass Program operation. Never raise V PP/Write Protect to VPP from any mode except Read mode, otherwise the memory may be left in an indeterminate state. Unlock Bypass Program Command. The Unlock Bypass Program command can be used to program one address in the memory array at a time. The command requires two Bus Write operations, the final write operation latches the address and data in the internal state machine and starts the Program/Erase Controller. The Program operation using the Unlock Bypass Program command behaves identically to the Program operation using the Program command. The operation cannot be aborted, the Status Register is read and protected blocks cannot be programmed. Errors must be reset using the Read/ Reset command, which leaves the device in Unlock Bypass Mode. See the Program command for details on the behavior. Unlock Bypass Reset Command. The Unlock Bypass Reset command can be used to return to Read/Reset mode from Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass Reset command. Read/Reset command does not exit from Unlock Bypass Mode. Chip Erase Command. The Chip Erase command can be used to erase the entire chip. Six Bus Write operations are required to issue the Chip Erase Command and start the Program/Erase Controller. If any blocks are protected then these are ignored and all the other blocks are erased. If all of the blocks are protected the Chip Erase operation appears to start but will terminate within about 100s, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the erase operation the memory will ignore all commands, including the Erase Suspend command. It is not possible to issue any command to abort the operation. Typical chip erase times are given in Table 6. All Bus Read operations during the Chip Erase operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Chip Erase operation has completed the memory will return to the Read Mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read Mode. The Chip Erase Command sets all of the bits in unprotected blocks of the memory to '1'. All previous data is lost. Block Erase Command. The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the list can be selected by repeating the sixth Bus Write operation using the address of the additional block. The Block Erase operation starts the Program/Erase Controller about 50s after the last Bus Write operation. Once the Program/Erase Controller starts it is not possible to select any more blocks. Each additional block must therefore be selected within 50s of the last block. The 50s timer restarts when an additional block is selected. The Status Register can be read after the sixth Bus Write operation. See the Status Register section for details on how to identify if the Program/ Erase Controller has started the Block Erase operation. If any selected blocks are protected then these are ignored and all the other selected blocks are erased. If all of the selected blocks are protected the Block Erase operation appears to start but will terminate within about 100s, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the Block Erase operation the memory will ignore all commands except the Erase Suspend command. Typical block erase times are given in Table 6. All Bus Read operations during the Block Erase operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Block Erase operation has completed the memory will return to the Read Mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. The Block Erase Command sets all of the bits in the unprotected selected blocks to '1'. All previous data in the selected blocks is lost. Erase Suspend Command. The Erase Suspend Command may be used to temporarily suspend a Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within the Erase Suspend Latency Time (refer to Table 6 15/44 M29W320DT, M29W320DB for value) of the Erase Suspend Command being issued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend command is issued during the period when the memory is waiting for an additional block (before the Program/Erase Controller starts) then the Erase is suspended immediately and will start immediately when the Erase Resume Command is issued. It is not possible to select any further blocks to erase after the Erase Resume. During Erase Suspend it is possible to Read and Program cells in blocks that are not being erased; both Read and Program operations behave as normal on these blocks. If any attempt is made to program in a protected block or in the suspended block then the Program command is ignored and the data remains unchanged. The Status Register is not read and no error condition is given. Reading from blocks that are being erased will output the Status Register. 16/44 It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands during an Erase Suspend. The Read/Reset command must be issued to return the device to Read Array mode before the Resume command will be accepted. Erase Resume Command. The Erase Resume command must be used to restart the Program/ Erase Controller after an Erase Suspend. The device must be in Read Array mode before the Resume command will be accepted. An erase can be suspended and resumed more than once. Block Protect and Chip Unprotect Commands. Each block can be separately protected against accidental Program or Erase. The whole chip can be unprotected to allow the data inside the blocks to be changed. Block Protect and Chip Unprotect operations are described in Appendix C. M29W320DT, M29W320DB Command Length Table 4. Commands, 16-bit mode, BYTE = VIH Bus Write Operations 1st 2nd Addr Data 1 X F0 3 555 Auto Select 3 Program 3rd 4th Addr Data Addr Data AA 2AA 55 X F0 555 AA 2AA 55 555 90 4 555 AA 2AA 55 555 A0 Unlock Bypass 3 555 AA 2AA 55 555 20 Unlock Bypass Program 2 X A0 PA PD Unlock Bypass Reset 2 X 90 X 00 Chip Erase 6 555 AA 2AA 55 555 Block Erase 6+ 555 AA 2AA 55 555 Erase Suspend 1 X B0 Erase Resume 1 X 30 Read CFI Query 1 55 98 5th Addr Data PA PD 80 555 80 555 6th Addr Data Addr Data AA 2AA 55 555 10 AA 2AA 55 BA 30 Read/Reset Note: X Don't Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The Command Interface only uses A-1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are Don't Care. DQ15A-1 is A-1 when BYTE is V IL or DQ15 when BYTE is VIH. Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued. Read/Reset command is ignored during algorithm execution. Auto Select. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status. Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/ Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additiona l Bus Write Operations until Timeout Bit is set. Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands. Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued. Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program commands on non-erasing blocks as normal. Erase Resume. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Program/Erase Controller completes and the memory returns to Read Mode. CFI Query. Command is valid when device is ready to read array data or when device is in autoselected mode. 17/44 M29W320DT, M29W320DB Command Length Table 5. Commands, 8-bit mode, BYTE = VIL Bus Write Operations 1st 2nd Addr Data 1 X F0 3 AAA Auto Select 3 Program 3rd 4th Addr Data Addr Data AA 555 55 X F0 AAA AA 555 55 AAA 90 4 AAA AA 555 55 AAA A0 Unlock Bypass 3 AAA AA 555 55 AAA 20 Unlock Bypass Program 2 X A0 PA PD Unlock Bypass Reset 2 X 90 X 00 Chip Erase 6 AAA AA 555 55 AAA Block Erase 6+ AAA AA 555 55 AAA Erase Suspend 1 X B0 Erase Resume 1 X 30 Read CFI Query 1 AA 98 5th Addr Data PA PD 80 AAA 80 AAA 6th Addr Data Addr Data AA 555 55 AAA 10 AA 555 55 BA 30 Read/Reset Note: X Don't Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The Command Interface only uses A-1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are Don't Care. DQ15A-1 is A-1 when BYTE is V IL or DQ15 when BYTE is VIH. Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued. Read/Reset command is ignored during algorithm execution. Auto Select. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status. Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/ Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additiona l Bus Write Operations until Timeout Bit is set. Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands. Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued. Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program commands on non-erasing blocks as normal. Erase Resume. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Program/Erase Controller completes and the memory returns to Read Mode. CFI Query. Command is valid when device is ready to read array data or when device is in autoselected mode. 18/44 M29W320DT, M29W320DB Table 6. Program, Erase Times and Program, Erase Endurance Cycles Typ (1, 2) Max(2) Unit Chip Erase 40 200(3) s Block Erase (64 KBytes) 0.8 6(4) s Erase Suspend Latency Time 15 25(4) s Program (Byte or Word) 10 200(3) s Accelerated Program (Byte or Word) 8 150(3) s Chip Program (Byte by Byte) 40 200(3) s Chip Program (Word by Word) 20 100(3) s Parameter Program/Erase Cycles (per Block) Data Retention Note: 1. 2. 3. 4. Min 100,000 cycles 20 years Typical values measured at room temperature and nominal voltages. Sampled, but not 100% tested. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles. Maximum value measured at worst case conditions for both temperature and VCC. STATUS REGISTER Bus Read operations from any address always read the Status Register during Program and Erase operations. It is also read during Erase Suspend when an address within a block being erased is accessed. The bits in the Status Register are summarized in Table 7, Status Register Bits. Data Polling Bit (DQ7). The Data Polling Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Data Polling Bit is output on DQ7 when the Status Register is read. During Program operations the Data Polling Bit outputs the complement of the bit being programmed to DQ7. After successful completion of the Program operation the memory returns to Read mode and Bus Read operations from the address just programmed output DQ7, not its complement. During Erase operations the Data Polling Bit outputs '0', the complement of the erased state of DQ7. After successful completion of the Erase operation the memory returns to Read Mode. In Erase Suspend mode the Data Polling Bit will output a '1' during a Bus Read operation within a block being erased. The Data Polling Bit will change from a '0' to a '1' when the Program/Erase Controller has suspended the Erase operation. Figure 7, Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A Valid Ad- dress is the address being programmed or an address within the block being erased. Toggle Bit (DQ6). The Toggle Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Toggle Bit is output on DQ6 when the Status Register is read. During Program and Erase operations the Toggle Bit changes from '0' to '1' to '0', etc., with successive Bus Read operations at any address. After successful completion of the operation the memory returns to Read mode. During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has suspended the Erase operation. If any attempt is made to erase a protected block, the operation is aborted, no error is signalled and DQ6 toggles for approximately 100s. If any attempt is made to program a protected block or a suspended block, the operation is aborted, no error is signalled and DQ6 toggles for approximately 1s. Figure 8, Data Toggle Flowchart, gives an example of how to use the Data Toggle Bit. Error Bit (DQ5). The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to '1' when a Program, Block Erase or Chip Erase operation fails to write the correct data to the memory. If the Error Bit is set a Read/Reset command must be issued 19/44 M29W320DT, M29W320DB before other commands are issued. The Error bit is output on DQ5 when the Status Register is read. Note that the Program command cannot change a bit set to '0' back to '1' and attempting to do so will set DQ5 to `1'. A Bus Read operation to that address will show the bit is still `0'. One of the Erase commands must be used to set all the bits in a block or in the whole memory from '0' to '1'. Erase Timer Bit (DQ3). The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase command. Once the Program/Erase Controller starts erasing the Erase Timer Bit is set to '1'. Before the Program/Erase Controller starts the Erase Timer Bit is set to '0' and additional blocks to be erased may be written to the Command Interface. The Erase Timer Bit is output on DQ3 when the Status Register is read. Alternative Toggle Bit (DQ2). The Alternative Toggle Bit can be used to monitor the Program/ Erase controller during Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is read. During Chip Erase and Block Erase operations the Toggle Bit changes from '0' to '1' to '0', etc., with successive Bus Read operations from addresses within the blocks being erased. A protected block is treated the same as a block not being erased. Once the operation completes the memory returns to Read mode. During Erase Suspend the Alternative Toggle Bit changes from '0' to '1' to '0', etc. with successive Bus Read operations from addresses within the blocks being erased. Bus Read operations to addresses within blocks not being erased will output the memory cell data as if in Read mode. After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be used to identify which block or blocks have caused the error. The Alternative Toggle Bit changes from '0' to '1' to '0', etc. with successive Bus Read Operations from addresses within blocks that have not erased correctly. The Alternative Toggle Bit does not change if the addressed block has erased correctly. Table 7. Status Register Bits Operation Address DQ7 DQ6 DQ5 DQ3 DQ2 RB Program Any Address DQ7 Toggle 0 - - 0 Program During Erase Suspend Any Address DQ7 Toggle 0 - - 0 Program Error Any Address DQ7 Toggle 1 - - 0 Chip Erase Any Address 0 Toggle 0 1 Toggle 0 Block Erase before timeout Erasing Block 0 Toggle 0 0 Toggle 0 Non-Erasing Block 0 Toggle 0 0 No Toggle 0 Erasing Block 0 Toggle 0 1 Toggle 0 Non-Erasing Block 0 Toggle 0 1 No Toggle 0 Erasing Block 1 No Toggle 0 - Toggle 1 Block Erase Erase Suspend Non-Erasing Block Data read as normal 1 Good Block Address 0 Toggle 1 1 No Toggle 0 Faulty Block Address 0 Toggle 1 1 Toggle 0 Erase Error Note: Unspecified data bits should be ignored. 20/44 M29W320DT, M29W320DB Figure 7. Data Polling Flowchart Figure 8. Data Toggle Flowchart START START READ DQ6 READ DQ5 & DQ7 at VALID ADDRESS READ DQ5 & DQ6 DQ7 = DATA YES DQ6 = TOGGLE NO NO YES NO DQ5 =1 NO YES DQ5 =1 YES READ DQ7 at VALID ADDRESS READ DQ6 TWICE DQ7 = DATA YES DQ6 = TOGGLE NO FAIL PASS NO YES FAIL PASS AI90194 AI01370C 21/44 M29W320DT, M29W320DB MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 8. Absolute Maximum Ratings Symbol Parameter Min Max Unit TBIAS Temperature Under Bias -50 125 C TSTG Storage Temperature -65 150 C VIO Input or Output Voltage (1,2) -0.6 VCC +0.6 V VCC Supply Voltage -0.6 4 V VID Identification Voltage -0.6 13.5 V VPP Program Voltage -0.6 13.5 V Note: 1. Minimum voltage may undershoot to -2V during transition and for less than 20ns during transitions. 2. Maximum voltage may overshoot to V CC +2V during transition and for less than 20ns during transitions. 22/44 M29W320DT, M29W320DB DC AND AC PARAMETERS This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement Conditions summarized in Table 9, Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. Table 9. Operating and AC Measurement Conditions M29W320D Parameter 70 90 Unit Min Max Min Max VCC Supply Voltage 3.0 3.6 2.7 3.6 V Ambient Operating Temperature -40 85 -40 85 C Load Capacitance (CL) 30 30 Input Rise and Fall Times pF 10 Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 9. AC Measurement I/O Waveform 10 ns 0 to VCC 0 to VCC V VCC/2 VCC/2 V Figure 10. AC Measurement Load Circuit VPP VCC VCC VCC VCC/2 25k 0V DEVICE UNDER TEST AI90196 25k CL 0.1F 0.1F CL includes JIG capacitance AI90197 Table 10. Device Capacitance Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Condition Min Max Unit VIN = 0V 6 pF VOUT = 0V 12 pF Note: Sampled only, not 100% tested. 23/44 M29W320DT, M29W320DB Table 11. DC Characteristics Symbol Parameter Test Condition Min Typ. Max Unit 0V VIN VCC 1 A 1 A ILI Input Leakage Current ILO Output Leakage Current 0V VOUT VCC ICC1 Supply Current (Read) E = VIL, G = VIH, f = 6MHz 5 10 mA ICC2 Supply Current (Standby) E = VCC 0.2V, RP = VCC 0.2V 35 100 A VPP/WP = VIL or VIH 20 mA VPP/WP = VPP 20 mA ICC3 (1) Supply Current (Program/ Erase) Program/ Erase Controller active VIL Input Low Voltage -0.5 0.8 V VIH Input High Voltage 0.7VCC VCC +0.3 V VPP Voltage for VPP/WP Program Acceleration VCC = 3.0V 10% 11.5 12.5 V IPP Current for VPP/WP Program Acceleration VCC = 3.0V 10% 10 mA VOL Output Low Voltage IOL = 1.8mA 0.45 V VOH Output High Voltage IOH = -100A VID Identification Voltage IID Identification Current VLKO Program/Erase Lockout Supply Voltage Note: 1. Sampled only, not 100% tested. 24/44 VCC -0.4 11.5 A9 = VID 1.8 V 12.5 V 100 A 2.3 V M29W320DT, M29W320DB Figure 11. Read Mode AC Waveforms tAVAV A0-A20/ A-1 VALID tAVQV tAXQX E tELQV tEHQX tELQX tEHQZ G tGLQX tGHQX tGLQV tGHQZ DQ0-DQ7/ DQ8-DQ15 VALID tBHQV BYTE tELBL/tELBH tBLQZ AI90198 Table 12. Read AC Characteristics M29W320D Symbol Alt Parameter Test Condition Unit 70 90 tAVAV tRC Address Valid to Next Address Valid E = VIL, G = VIL Min 70 90 ns tAVQV tACC Address Valid to Output Valid E = VIL, G = VIL Max 70 90 ns tELQX (1) tLZ Chip Enable Low to Output Transition G = VIL Min 0 0 ns tELQV tCE Chip Enable Low to Output Valid G = VIL Max 70 90 ns tGLQX (1) tOLZ Output Enable Low to Output Transition E = VIL Min 0 0 ns tGLQV tOE Output Enable Low to Output Valid E = VIL Max 30 35 ns tEHQZ (1) tHZ Chip Enable High to Output Hi-Z G = VIL Max 25 30 ns tGHQZ (1) tDF Output Enable High to Output Hi-Z E = VIL Max 25 30 ns tEHQX tGHQX tAXQX tOH Chip Enable, Output Enable or Address Transition to Output Transition Min 0 0 ns tELBL tELBH tELFL tELFH Chip Enable to BYTE Low or High Max 5 5 ns tBLQZ tFLQZ BYTE Low to Output Hi-Z Max 25 30 ns tBHQV tFHQV BYTE High to Output Valid Max 30 40 ns Note: 1. Sampled only, not 100% tested. 25/44 M29W320DT, M29W320DB Figure 12. Write AC Waveforms, Write Enable Controlled tAVAV A0-A20/ A-1 VALID tWLAX tAVWL tWHEH E tELWL tWHGL G tGHWL tWLWH W tWHWL tDVWH DQ0-DQ7/ DQ8-DQ15 tWHDX VALID VCC tVCHEL RB tWHRL AI90199 Table 13. Write AC Characteristics, Write Enable Controlled M29W320D Symbol Alt Parameter Unit 70 90 tAVAV tWC Address Valid to Next Address Valid Min 70 90 ns tELWL tCS Chip Enable Low to Write Enable Low Min 0 0 ns tWLWH tWP Write Enable Low to Write Enable High Min 45 50 ns tDVWH tDS Input Valid to Write Enable High Min 45 50 ns tWHDX tDH Write Enable High to Input Transition Min 0 0 ns tWHEH tCH Write Enable High to Chip Enable High Min 0 0 ns tWHWL tWPH Write Enable High to Write Enable Low Min 30 30 ns tAVWL tAS Address Valid to Write Enable Low Min 0 0 ns tWLAX tAH Write Enable Low to Address Transition Min 45 50 ns Output Enable High to Write Enable Low Min 0 0 ns tGHWL tWHGL tOEH Write Enable High to Output Enable Low Min 0 0 ns tWHRL (1) tBUSY Program/Erase Valid to RB Low Max 30 35 ns tVCHEL tVCS VCC High to Chip Enable Low Min 50 50 s Note: 1. Sampled only, not 100% tested. 26/44 M29W320DT, M29W320DB Figure 13. Write AC Waveforms, Chip Enable Controlled tAVAV A0-A20/ A-1 VALID tELAX tAVEL tEHWH W tWLEL tEHGL G tGHEL tELEH E tEHEL tDVEH DQ0-DQ7/ DQ8-DQ15 tEHDX VALID VCC tVCHWL RB tEHRL AI90200 Table 14. Write AC Characteristics, Chip Enable Controlled M29W320D Symbol Alt Parameter Unit 70 90 tAVAV tWC Address Valid to Next Address Valid Min 70 90 ns tWLEL tWS Write Enable Low to Chip Enable Low Min 0 0 ns tELEH tCP Chip Enable Low to Chip Enable High Min 45 50 ns tDVEH tDS Input Valid to Chip Enable High Min 45 50 ns tEHDX tDH Chip Enable High to Input Transition Min 0 0 ns tEHWH tWH Chip Enable High to Write Enable High Min 0 0 ns tEHEL tCPH Chip Enable High to Chip Enable Low Min 30 30 ns tAVEL tAS Address Valid to Chip Enable Low Min 0 0 ns tELAX tAH Chip Enable Low to Address Transition Min 45 50 ns Output Enable High Chip Enable Low Min 0 0 ns tGHEL tEHGL tOEH Chip Enable High to Output Enable Low Min 0 0 ns tEHRL (1) tBUSY Program/Erase Valid to RB Low Max 30 35 ns tVCHWL tVCS VCC High to Write Enable Low Min 50 50 s Note: 1. Sampled only, not 100% tested. 27/44 M29W320DT, M29W320DB Figure 14. Reset/Block Temporary Unprotect AC Waveforms W, E, G tPHWL, tPHEL, tPHGL RB tRHWL, tRHEL, tRHGL tPLPX RP tPHPHH tPLYH AI02931B Table 15. Reset/Block Temporary Unprotect AC Characteristics M29W320D Symbol tPHWL (1) tPHEL Alt Parameter Unit 70 90 tRH RP High to Write Enable Low, Chip Enable Low, Output Enable Low Min 50 50 ns tRB RB High to Write Enable Low, Chip Enable Low, Output Enable Low Min 0 0 ns tPLPX tRP RP Pulse Width Min 500 500 ns tPLYH (1) tREADY RP Low to Read Mode Max 10 10 s tPHPHH (1) tVIDR RP Rise Time to VID Min 500 500 ns VPP Rise and Fall Time Min 250 250 ns tPHGL (1) tRHWL (1) tRHEL (1) tRHGL (1) tVHVPP (1) Note: 1. Sampled only, not 100% tested. Figure 15. Accelerated Program Timing Waveforms VPP VPP/WP VIL or VIH tVHVPP tVHVPP AI90202 28/44 M29W320DT, M29W320DB PACKAGE MECHANICAL Figure 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline 1 48 e D1 B 24 L1 25 A2 E1 E A A1 DIE L C CP TSOP-G Note: Drawing not to scale. Table 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data millimeters inches Symbol Typ Min A Max Typ Min 1.200 Max 0.0472 A1 0.100 0.050 0.150 0.0039 0.0020 0.0059 A2 1.000 0.950 1.050 0.0394 0.0374 0.0413 B 0.220 0.170 0.270 0.0087 0.0067 0.0106 0.100 0.210 0.0039 0.0083 C CP 0.080 0.0031 D1 12.000 11.900 12.100 0.4724 0.4685 0.4764 E 20.000 19.800 20.200 0.7874 0.7795 0.7953 E1 18.400 18.300 18.500 0.7244 0.7205 0.7283 e 0.500 - - 0.0197 - - L 0.600 0.500 0.700 0.0236 0.0197 0.0276 L1 0.800 3 0 5 0.0315 0 5 3 29/44 M29W320DT, M29W320DB Figure 17. TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Outline D D1 SD FD e E ddd SE E1 BALL "A1" FE A e b A2 A1 BGA-Z33 Note: Drawing is not to scale. Table 17. TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Mechanical Data millimeters inches Symbol Typ Min A Max Typ Min 1.200 A1 0.0472 0.250 A2 0.0098 0.900 b Max 0.350 0.450 0.0354 0.0138 0.0177 D 7.000 6.900 7.100 0.2756 0.2717 0.2795 D1 5.600 - - 0.2205 - - ddd - - 0.100 - - 0.0039 E 11.000 10.900 11.100 0.4331 0.4291 0.4370 E1 8.800 - - 0.3465 - - e 0.800 - - 0.0315 - - FD 0.700 - - 0.0276 - - FE 1.100 - - 0.0433 - - SD 0.400 - - 0.0157 - - SE 0.400 - - 0.0157 - - 30/44 M29W320DT, M29W320DB PART NUMBERING Table 18. Ordering Information Scheme Example: M29W320DB 90 N 1 T Device Type M29 Operating Voltage W = VCC = 2.7 to 3.6V Device Function 320D = 32 Mbit (x8/x16), Boot Block Array Matrix T = Top Boot B = Bottom Boot Speed 70 = 70 ns 90 = 90 ns Package N = TSOP48: 12 x 20 mm ZA = TFBGA63: 7x11mm, 0.80 mm pitch Temperature Range 1 = 0 to 70 C 6 = -40 to 85 C Option Blank = Standard Packing T = Tape & Reel Packing E = Lead-free Package, Standard Packing F = Lead-free Package, Tape & Reel Packing Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you. 31/44 M29W320DT, M29W320DB APPENDIX A. BLOCK ADDRESS TABLE Table 19. Top Boot Block Addresses, M29W320DT # Size (KByte/ KWord) 66 16/8 3FC000h-3FFFFFh 1FE000h-1FFFFFh 65 8/4 3FA000h-3FBFFFh 1FD000h-1FDFFFh 64 8/4 3F8000h-3F9FFFh 1FC000h-1FCFFFh 63 32/16 3F0000h-3F7FFFh 1F8000h-1FBFFFh 62 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh 61 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh 60 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh 59 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh 58 64/32 3A0000h-3AFFFFh 1D0000h-1D7FFFh 57 64/32 390000h-39FFFFh 1C8000h-1CFFFFh 56 64/32 380000h-18FFFFh 1C0000h-1C7FFFh 55 64/32 370000h-37FFFFh 1B8000h-1BFFFFh 54 64/32 360000h-36FFFFh 1B0000h-1B7FFFh 53 64/32 350000h-35FFFFh 1A8000h-1AFFFFh 52 64/32 340000h-34FFFFh 1A0000h-1A7FFFh 51 64/32 330000h-33FFFFh 198000h-19FFFFh 50 64/32 320000h-32FFFFh 190000h-197FFFh 49 64/32 310000h-31FFFFh 188000h-18FFFFh 48 64/32 300000h-30FFFFh 180000h-187FFFh 47 64/32 2F0000h-2FFFFFh 178000h-17FFFFh 46 64/32 2E0000h-2EFFFFh 170000h-177FFFh 45 64/32 2D0000h-2DFFFFh 168000h-16FFFFh 44 64/32 2C0000h-2CFFFFh 160000h-167FFFh 43 64/32 2B0000h-2BFFFFh 158000h-15FFFFh 42 64/32 2A0000h-2AFFFFh 150000h-157FFFh 41 64/32 290000h-29FFFFh 148000h-14FFFFh 40 64/32 280000h-28FFFFh 140000h-147FFFh 39 64/32 270000h-27FFFFh 138000h-13FFFFh 38 64/32 260000h-26FFFFh 130000h-137FFFh 37 64/32 250000h-25FFFFh 128000h-12FFFFh 36 64/32 240000h-24FFFFh 120000h-127FFFh 35 64/32 230000h-23FFFFh 118000h-11FFFFh 32/44 Address Range (x8) Address Range (x16) 34 64/32 220000h-22FFFFh 110000h-117FFFh 33 64/32 210000h-21FFFFh 108000h-10FFFFh 32 64/32 200000h-20FFFFh 100000h-107FFFh 31 64/32 1F0000h-1FFFFFh 0F8000h-0FBFFFh 30 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh 29 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh 28 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh 27 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh 26 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh 25 64/32 190000h-19FFFFh 0C8000h-0CFFFFh 24 64/32 180000h-18FFFFh 0C0000h-0C7FFFh 23 64/32 170000h-17FFFFh 0B8000h-0BFFFFh 22 64/32 160000h-16FFFFh 0B0000h-0B7FFFh 21 64/32 150000h-15FFFFh 0A8000h-0AFFFFh 20 64/32 140000h-14FFFFh 0A0000h-0A7FFFh 19 64/32 130000h-13FFFFh 098000h-09FFFFh 18 64/32 120000h-12FFFFh 090000h-097FFFh 17 64/32 110000h-11FFFFh 088000h-08FFFFh 16 64/32 100000h-10FFFFh 080000h-087FFFh 15 64/32 0F0000h-0FFFFFh 078000h-07FFFFh 14 64/32 0E0000h-0EFFFFh 070000h-077FFFh 13 64/32 0D0000h-0DFFFFh 068000h-06FFFFh 12 64/32 0C0000h-0CFFFFh 060000h-067FFFh 11 64/32 0B0000h-0BFFFFh 058000h-05FFFFh 10 64/32 0A0000h-0AFFFFh 050000h-057FFFh 9 64/32 090000h-09FFFFh 048000h-04FFFFh 8 64/32 080000h-08FFFFh 040000h-047FFFh 7 64/32 070000h-07FFFFh 038000h-03FFFFh 6 64/32 060000h-06FFFFh 030000h-037FFFh 5 64/32 050000h-05FFFFh 028000h-02FFFFh 4 64/32 040000h-04FFFFh 020000h-027FFFh 3 64/32 030000h-03FFFFh 018000h-01FFFFh 2 64/32 020000h-02FFFFh 010000h-017FFFh 1 64/32 010000h-01FFFFh 008000h-00FFFFh 0 64/32 000000h-00FFFFh 000000h-007FFFh M29W320DT, M29W320DB Table 20. Bottom Boot Block Addresses, M29W320DB # Size (KByte/ KWord) Address Range (x8) Address Range (x16) 66 64/32 3F0000h-3FFFFFh 1F8000h-1FFFFFh 65 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh 64 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh 63 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh 62 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh 61 64/32 3A0000h-3AFFFFh 1D0000h-1D7FFFh 60 64/32 390000h-39FFFFh 1C8000h-1CFFFFh 59 64/32 380000h-18FFFFh 1C0000h-1C7FFFh 58 64/32 370000h-37FFFFh 1B8000h-1BFFFFh 57 64/32 360000h-36FFFFh 1B0000h-1B7FFFh 56 64/32 350000h-35FFFFh 1A8000h-1AFFFFh 55 64/32 340000h-34FFFFh 1A0000h-1A7FFFh 54 64/32 330000h-33FFFFh 198000h-19FFFFh 53 64/32 320000h-32FFFFh 190000h-197FFFh 52 64/32 310000h-31FFFFh 188000h-18FFFFh 51 64/32 300000h-30FFFFh 180000h-187FFFh 50 64/32 2F0000h-2FFFFFh 178000h-17FFFFh 49 64/32 2E0000h-2EFFFFh 170000h-177FFFh 48 64/32 2D0000h-2DFFFFh 168000h-16FFFFh 47 64/32 2C0000h-2CFFFFh 160000h-167FFFh 46 64/32 2B0000h-2BFFFFh 158000h-15FFFFh 45 64/32 2A0000h-2AFFFFh 150000h-157FFFh 44 64/32 290000h-29FFFFh 148000h-14FFFFh 43 64/32 280000h-28FFFFh 140000h-147FFFh 42 64/32 270000h-27FFFFh 138000h-13FFFFh 41 64/32 260000h-26FFFFh 130000h-137FFFh 40 64/32 250000h-25FFFFh 128000h-12FFFFh 39 64/32 240000h-24FFFFh 120000h-127FFFh 38 64/32 230000h-23FFFFh 118000h-11FFFFh 37 64/32 220000h-22FFFFh 110000h-117FFFh 36 64/32 210000h-21FFFFh 108000h-10FFFFh 35 64/32 200000h-20FFFFh 100000h-107FFFh 34 64/32 1F0000h-1FFFFFh 0F8000h-0FBFFFh 33 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh 32 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh 31 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh 30 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh 29 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh 28 64/32 190000h-19FFFFh 0C8000h-0CFFFFh 27 64/32 180000h-18FFFFh 0C0000h-0C7FFFh 26 64/32 170000h-17FFFFh 0B8000h-0BFFFFh 25 64/32 160000h-16FFFFh 0B0000h-0B7FFFh 24 64/32 150000h-15FFFFh 0A8000h-0AFFFFh 23 64/32 140000h-14FFFFh 0A0000h-0A7FFFh 22 64/32 130000h-13FFFFh 098000h-09FFFFh 21 64/32 120000h-12FFFFh 090000h-097FFFh 20 64/32 110000h-11FFFFh 088000h-08FFFFh 19 64/32 100000h-10FFFFh 080000h-087FFFh 18 64/32 0F0000h-0FFFFFh 078000h-07FFFFh 17 64/32 0E0000h-0EFFFFh 070000h-077FFFh 16 64/32 0D0000h-0DFFFFh 068000h-06FFFFh 15 64/32 0C0000h-0CFFFFh 060000h-067FFFh 14 64/32 0B0000h-0BFFFFh 058000h-05FFFFh 13 64/32 0A0000h-0AFFFFh 050000h-057FFFh 12 64/32 090000h-09FFFFh 11 64/32 080000h-08FFFFh 040000h-047FFFh 10 64/32 070000h-07FFFFh 038000h-03FFFFh 9 64/32 060000h-06FFFFh 030000h-037FFFh 8 64/32 050000h-05FFFFh 028000h-02FFFFh 7 64/32 040000h-04FFFFh 020000h-027FFFh 6 64/32 030000h-03FFFFh 018000h-01FFFFh 5 64/32 020000h-02FFFFh 010000h-017FFFh 4 64/32 010000h-01FFFFh 008000h-00FFFFh 3 32/16 008000h-00FFFFh 004000h-007FFFh 2 8/4 006000h-007FFFh 003000h-003FFFh 1 8/4 004000h-005FFFh 002000h-002FFFh 0 16/8 000000h-003FFFh 000000h-001FFFh 048000h-04FFFFh 33/44 M29W320DT, M29W320DB APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the CFI Query Command is issued the device enters CFI Query mode and the data structure is read from the memory. Tables 21, 22, 23, 24, 25 and 26 show the addresses used to retrieve the data. The CFI data structure also contains a security area where a 64 bit unique security number is written (see Table 26, Security Code area). This area can be accessed only in Read mode by the final user. It is impossible to change the security number after it has been written by ST. Issue a Read command to return to Read mode. Table 21. Query Structure Overview Address Sub-section Name Description x16 x8 10h 20h CFI Query Identification String Command set ID and algorithm data offset 1Bh 36h System Interface Information Device timing & voltage information 27h 4Eh Device Geometry Definition Flash device layout 40h 80h Primary Algorithm-specific Extended Query table Additional information specific to the Primary Algorithm (optional) 61h C2h Security Code Area 64 bit unique device number Note: Query data are always presented on the lowest order data outputs. Table 22. CFI Query Identification String Address Data Description x16 x8 10h 20h 0051h 11h 22h 0052h 12h 24h 0059h 13h 26h 0002h 14h 28h 0000h 15h 2Ah 0040h 16h 2Ch 0000h 17h 2Eh 0000h 18h 30h 0000h Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported 19h 32h 0000h Address for Alternate Algorithm extended Query table 1Ah 34h 0000h "Q" Query Unique ASCII String "QRY" "R" "Y" Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm Address for Primary Algorithm extended Query table (see Table 24) Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are `0'. 34/44 Value AMD Compatible P = 40h NA NA M29W320DT, M29W320DB Table 23. CFI Query System Interface Information Address Data Description Value x16 x8 1Bh 36h 0027h VCC Logic Supply Minimum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 2.7V 1Ch 38h 0036h VCC Logic Supply Maximum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 3.6V 1Dh 3Ah 00B5h VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV 11.5V 1Eh 3Ch 00C5h VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV 12.5V 1Fh 3Eh 0004h Typical timeout per single byte/word program = 2n s 16s 20h 40h 0000h Typical timeout for minimum size write buffer program = 2n s NA 21h 42h 000Ah Typical timeout per individual block erase = 2n ms 1s 22h 44h 0000h Typical timeout for full chip erase = 2n ms NA 23h 46h 0005h Maximum timeout for byte/word program = 2n times typical 24h 48h 0000h Maximum timeout for write buffer program = 2n times typical NA 25h 4Ah 0004h Maximum timeout per individual block erase = 2n times typical 16s 26h 4Ch 0000h Maximum timeout for chip erase = 2n times typical NA 512s 35/44 M29W320DT, M29W320DB Table 24. Device Geometry Definition Address Data Description Value x16 x8 27h 4Eh 0016h Device Size = 2n in number of bytes 4 MByte 28h 29h 50h 52h 0002h 0000h Flash Device Interface Code description x8, x16 Async. 2Ah 2Bh 54h 56h 0000h 0000h Maximum number of bytes in multi-byte program or page = 2n NA 2Ch 58h 0004h Number of Erase Block Regions within the device. It specifies the number of regions within the device containing contiguous Erase Blocks of the same size. 4 2Dh 2Eh 5Ah 5Ch 0000h 0000h Region 1 Information Number of identical size erase block = 0000h+1 1 2Fh 30h 5Eh 60h 0040h 0000h Region 1 Information Block size in Region 1 = 0040h * 256 byte 31h 32h 62h 64h 0001h 0000h Region 2 Information Number of identical size erase block = 0001h+1 33h 34h 66h 68h 0020h 0000h Region 2 Information Block size in Region 2 = 0020h * 256 byte 35h 36h 6Ah 6Ch 0000h 0000h Region 3 Information Number of identical size erase block = 0000h+1 37h 38h 6Eh 70h 0080h 0000h Region 3 Information Block size in Region 3 = 0080h * 256 byte 39h 3Ah 72h 74h 003Eh 0000h Region 4 Information Number of identical-size erase block = 003Eh+1 3Bh 3Ch 76h 78h 0000h 0001h Region 4 Information Block size in Region 4 = 0100h * 256 byte 36/44 16 Kbyte 2 8 Kbyte 1 32 Kbyte 63 64 Kbyte M29W320DT, M29W320DB Table 25. Primary Algorithm-Specific Extended Query Table Address Data Description Value x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h Major version number, ASCII "1" 44h 88h 0030h Minor version number, ASCII "0" 45h 8Ah 0000h Address Sensitive Unlock (bits 1 to 0) 00 = required, 01= not required Silicon Revision Number (bits 7 to 2) Yes 46h 8Ch 0002h Erase Suspend 00 = not supported, 01 = Read only, 02 = Read and Write 2 47h 8Eh 0001h Block Protection 00 = not supported, x = number of blocks in per group 1 48h 90h 0001h Temporary Block Unprotect 00 = not supported, 01 = supported 49h 92h 0004h Block Protect /Unprotect 04 = M29W400B 4Ah 94h 0000h Simultaneous Operations, 00 = not supported No 4Bh 96h 0000h Burst Mode, 00 = not supported, 01 = supported No 4Ch 98h 0000h Page Mode, 00 = not supported, 01 = 4 page word, 02 = 8 page word No 4Dh 9Ah 00B5h VPP Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV 11.5V 4Eh 9Ch 00C5h VPP Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV 12.5V 4Fh 9Eh 000xh Top/Bottom Boot Block Flag 02h = Bottom Boot device, 03h = Top Boot device "P" Primary Algorithm extended Query table unique ASCII string "PRI" "R" "I" Yes 4 - Table 26. Security Code Area Address Data x16 x8 61h C3h, C2h XXXX 62h C5h, C4h XXXX 63h C7h, C6h XXXX 64h C9h, C8h XXXX Description 64 bit: unique device number 37/44 M29W320DT, M29W320DB APPENDIX C. BLOCK PROTECTION Block protection can be used to prevent any operation from modifying the data stored in the Flash. Each Block can be protected individually. Once protected, Program and Erase operations on the block fail to change the data. There are three techniques that can be used to control Block Protection, these are the Programmer technique, the In-System technique and Temporary Unprotection. Temporary Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is described in the Signal Descriptions section. Unlike the Command Interface of the Program/ Erase Controller, the techniques for protecting and unprotecting blocks change between different Flash memory suppliers. For example, the techniques for AMD parts will not work on STMicroelectronics parts. Care should be taken when changing drivers for one part to work on another. Programmer Technique The Programmer technique uses high (V ID) voltage levels on some of the bus pins. These cannot be achieved using a standard microprocessor bus, therefore the technique is recommended only for use in Programming Equipment. To protect a block follow the flowchart in Figure 18, Programmer Equipment Block Protect Flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then all blocks can be unprotected at the same time. To unprotect the chip follow Figure 19, Programmer Equipment Chip Unprotect Flowchart. Table 27, Programmer Technique Bus Operations, gives a summary of each operation. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing. In-System Technique The In-System technique requires a high voltage level on the Reset/Blocks Temporary Unprotect pin, RP. This can be achieved without violating the maximum ratings of the components on the microprocessor bus, therefore this technique is suitable for use after the Flash has been fitted to the system. To protect a block follow the flowchart in Figure 20, In-System Block Protect Flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then all the blocks can be unprotected at the same time. To unprotect the chip follow Figure 21, In-System Chip Unprotect Flowchart. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not allow the microprocessor to service interrupts that will upset the timing and do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing. Table 27. Programmer Technique Bus Operations, BYTE = V IH or VIL E G W Address Inputs A0-A20 Data Inputs/Outputs DQ15A-1, DQ14-DQ0 Block Protect VIL VID VIL Pulse A9 = VID, A12-A20 Block Address Others = X X Chip Unprotect VID VID VIL Pulse A9 = VID, A12 = VIH, A15 = VIH Others = X X Block Protection Verify VIL VIL VIH A0 = VIL, A1 = VIH, A6 = VIL, A9 = VID, A12-A20 Block Address Others = X Pass = XX01h Retry = XX00h Block Unprotection Verify VIL VIL VIH A0 = VIL, A1 = VIH, A6 = VIH, A9 = VID, A12-A20 Block Address Others = X Retry = XX01h Pass = XX00h Operation 38/44 M29W320DT, M29W320DB Figure 18. Programmer Equipment Block Protect Flowchart START Set-up ADDRESS = BLOCK ADDRESS W = VIH n=0 G, A9 = VID, E = VIL Protect Wait 4s W = VIL Wait 100s W = VIH E, G = VIH, A0, A6 = VIL, A1 = VIH E = VIL Verify Wait 4s G = VIL Wait 60ns Read DATA DATA NO = 01h YES A9 = VIH E, G = VIH ++n = 25 NO End YES PASS A9 = VIH E, G = VIH FAIL AI03469 39/44 M29W320DT, M29W320DB Figure 19. Programmer Equipment Chip Unprotect Flowchart START Set-up PROTECT ALL BLOCKS n=0 CURRENT BLOCK = 0 A6, A12, A15 = VIH(1) E, G, A9 = VID Unprotect Wait 4s W = VIL Wait 10ms W = VIH E, G = VIH ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL, A1, A6 = VIH E = VIL Wait 4s G = VIL INCREMENT CURRENT BLOCK Verify Wait 60ns Read DATA NO End NO 40/44 ++n = 1000 DATA = 00h YES LAST BLOCK YES YES A9 = VIH E, G = VIH A9 = VIH E, G = VIH FAIL PASS NO AI03470 M29W320DT, M29W320DB Figure 20. In-System Equipment Block Protect Flowchart Set-up START n=0 RP = VID Protect WRITE 60h ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL WRITE 60h ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL Wait 100s Verify WRITE 40h ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL Wait 4s READ DATA ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL DATA NO = 01h YES End RP = VIH ISSUE READ/RESET COMMAND PASS ++n = 25 NO YES RP = VIH ISSUE READ/RESET COMMAND FAIL AI03471 41/44 M29W320DT, M29W320DB Figure 21. In-System Equipment Chip Unprotect Flowchart START Set-up PROTECT ALL BLOCKS n=0 CURRENT BLOCK = 0 RP = VID WRITE 60h ANY ADDRESS WITH A0 = VIL, A1 = VIH, A6 = VIH Unprotect WRITE 60h ANY ADDRESS WITH A0 = VIL, A1 = VIH, A6 = VIH Wait 10ms Verify WRITE 40h ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIH Wait 4s READ DATA ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIH NO End NO ++n = 1000 YES DATA = 00h INCREMENT CURRENT BLOCK YES LAST BLOCK NO YES RP = VIH RP = VIH ISSUE READ/RESET COMMAND ISSUE READ/RESET COMMAND FAIL PASS AI03472 42/44 M29W320DT, M29W320DB REVISION HISTORY Table 28. Document Revision History Date Version March-2001 -01 First Issue (Brief Data) 08-Jun-2001 -02 Document expanded to full Product Preview 22-Jun-2001 -03 Minor text corrections to Read/Reset and Read CFI commands and Status Register Error and Toggle Bits. -04 Document type: from Product Preview to Preliminary Data TFBGA connections and Block Addresses (x16) diagrams clarification Write Protect and Block Unprotect clarification CFI Primary Algorithm table, Block Protection change 05-Oct-2001 -05 Added Block Protection Appendix "Write Protect/VPP" pin renamed to "VPP/Write Protect" to be consistent with abbreviation. Changes to the VPP/WP pin description, Figure 15 and Table 15. IPP added to Table 11 and ICC3 clarified. Modified description of VPP/WP operation in Unlock Bypass Command section. Added VPP/WP decoupling capacitor to Figure 10. Clarified Read/Reset operation during Erase Suspend. 07-Feb-2002 -06 TFBGA package changed from 48 ball to 63 ball 05-Apr-2002 -07 Description of Ready/Busy signal clarified (and Figure 14 modified) Clarified allowable commands during block erase Clarified the mode the device returns to in the CFI Read Query command section 7.1 Erase Suspend Latency Time (typical and maximum) added to Program, Erase Times and Program, Erase Endurance Cycles table. Typical values added for Icc1 and Icc2 in DC characteristics table. Logic Diagram and Data Toggle Flowchart corrected. Revision numbering modified: a minor revision will be indicated by incrementing the digit after the dot, and a major revision, by incrementing the digit before the dot (revision version 07 equals 7.0). Document promoted to full datasheet. 7.2 Data Retention added to Table 6, Program, Erase Times and Program, Erase Endurance Cycles, and Typical after 100k W/E Cycles column removed. TSOP48 package mechanical updated. Lead-free package options E and F added to Table 18, Ordering Information Scheme. 27-Jul-2001 19-Nov-2002 26-May-2003 Revision Details 43/44 M29W320DT, M29W320DB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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