PD - 93851A IRF7402 HEXFET(R) Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035 T o p V ie w Description Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 6.8 5.4 54 2.5 1.6 0.02 12 5.0 -55 to + 150 Units A W W/C V V/ns C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Max. Units 50 C/W 1 2/22/00 IRF7402 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.70 6.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.024 --- V/C Reference to 25C, ID = 1mA 0.035 VGS = 4.5V, ID = 4.1A 0.050 VGS = 2.7V, ID = 3.5A --- --- V VDS = VGS, ID = 250A --- --- S VDS = 10V, ID = 1.9A --- 1.0 VDS = 16V, VGS = 0V A --- 25 VDS = 16V, VGS = 0V, TJ = 125C --- 100 VGS = 12V nA --- -100 VGS = -12V 14 22 ID = 3.8A 2.0 3.0 nC VDS = 16V 6.3 9.5 VGS = 4.5V, See Fig. 6 and 12 5.1 --- VDD = 10V 47 --- ID = 3.8A ns 24 --- RG = 6.2 32 --- RD = 2.6 650 --- VGS = 0V 300 --- pF VDS = 15V 150 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- 2.5 --- --- 54 --- --- --- --- 51 69 1.2 77 100 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 3.8A, VGS = 0V TJ = 25C, IF = 3.8A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ISD 3.8A, di/dt 96A/s, VDD V(BR)DSS, TJ 150C 2 Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec This data sheet has curves & data from IRF7601 www.irf.com IRF7402 100 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOT TOM 1.5V VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOT TOM 1.5V TO P I , D rain-to-S ou rc e C urre nt (A ) D I , D rain-to-S ou rc e C urre nt (A ) D TO P 10 1 20 s P U LS E W ID TH TJ = 2 5C A 1.5V 0.1 0.1 1 10 1 .5V 1 20 s P U LS E W ID TH TJ = 1 50 C A 0.1 10 0.1 1 V D S , D rain-to-S ourc e V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D , D rain-to-So urce C urren t (A ) 100 10 T J = 1 5 0 C T J = 25 C 1 V DS = 10V 2 0 s P UL S E W ID TH 0.1 1.5 2.0 2.5 3.0 3.5 V G S , G ate-to -So urce Voltag e (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 V D S , D rain-to-S ourc e V oltage (V ) A I D = 3.8A 1.5 1.0 0.5 V G S = 4.5 V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction T em perature (C ) Fig 4. Normalized On-Resistance Vs. Temperature 3 A IRF7402 10 V GS C iss C rs s C o ss C , Capacitance (pF) 1000 = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d V G S, G ate-to-S ource V oltage (V ) 1200 C iss 800 C oss 600 400 C rss 200 0 10 8 6 4 2 FO R TE S T CIR C U IT S E E FIG U R E 9 0 A 1 I D = 3 .8A V D S = 16 V 0 100 12 16 20 A 24 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) I S D , Reverse D rain C urrent (A) 8 Q G , Total G ate C harge (nC ) V D S , D rain-to-S ourc e V oltage (V ) 100 10 T J = 15 0C T J = 2 5C 1 V G S = 0V 0.1 0.4 0.8 1.2 1.6 2.0 V S D , S ourc e-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage 4 4 A 2.4 100us 10 1ms TC = 25 C TJ = 150 C Single Pulse 1 1 10ms 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7402 8.0 RD V DS I D , Drain Current (A) VGS 6.0 D.U.T. RG + - V DD 4.5V 4.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 TC , Case Temperature 125 150 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7402 Current Regulator Same Type as D.U.T. 50K .2F 12V QG .3F 4.5V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 12b. Gate Charge Test Circuit 0.3 RDS(on) , Drain-to-Source On Resistance ( ) RDS(on) , Drain-to-Source On Resistance ( ) Fig 12a. Basic Gate Charge Waveform VGS = 2.5V 0.2 0.1 VGS =5V 0.0 A 0 3 6 9 12 15 0.05 0.04 D ID D , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current 6 = 5.7A 0.03 0.02 A 2 I ID Current Sampling Resistors 4 V GS 6 8 , Gate-to-Source Voltage (V) Fig 14. Typical On-Resistance Vs. Gate Voltage www.irf.com IRF7402 SO-8 Package Details D IM D -B - 5 8 E -A - 1 7 2 5 A 6 3 e 6X 5 H 0.2 5 (.0 10 ) 4 M A M e1 K x 45 -C- 0 .10 (.00 4) B 8X 0 .25 (.01 0) A1 L 8X 6 C 8X M C A S B S N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. M IN M AX .0532 .0688 1 .35 1 .75 .0040 .0098 0 .10 0 .25 B .014 .018 0 .36 0 .46 C .0 075 .0 098 0 .19 0.25 D .1 89 .1 96 4 .80 4.98 E .150 .157 3 .81 3 .99 e1 A M IL LIM E T E R S MAX A1 e IN C H E S M IN .050 B A S IC 1.2 7 B A S IC .025 B A S IC 0.6 35 B A S IC H .2 284 .2 440 K .011 .019 0 .28 5 .80 0 .48 6.20 L 0 .16 .050 0 .41 1.27 0 8 0 8 R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X SO-8 Part Marking www.irf.com 7 IRF7402 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. 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