1
Subject to change without notice.
www.cree.com/rf
CGHV1F006S
6 W, DC - 18 GHz, 40V, GaN HEMT
Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specically for high efciency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S, C, X and Ku-Band amplier applications. The datasheet
specications are based on a C-Band (5.5 - 6.5 GHz) amplier. Additional application
circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 -
9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm,
surface mount, dual-at-no-lead (DFN) package. Under reduced power, the transistor can
operate below 40V to as low as 20V VDD, maintaining high gain and efciency.
Package Type: 3x4 DFN
PN: CGHV1F006S
Rev 2.1 – May 2015
Features for 40 V in CGHV1F006S-AMP
• Up to 18 GHz Operation
• 8 W Typical Output Power
• 17 dB Gain at 6.0 GHz
• 15 dB Gain at 9.0 GHz
• Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4 GHz, and 8.5 - 9.6 GHz.
• High degree of APD and DPD correction can be applied
Typical Performance 5.5-6.5 GHz (TC = 25˚C) , 40 V
Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units
Small Signal Gain 15.4 16.5 17.8 dB
Output Power @ PIN = 28 dBm 38.6 39.3 39.0 dBm
Drain Efciency @ PIN = 28 dBm 55 57 52 %
Note:
Measured in the CGHV1F006S-AMP application circuit. Pulsed 100 µs 10% duty.
Listing of Available Hardware Application Circuits / Demonstration Circuits
Application Circuit Operating Frequency Amplier Class Operating Voltage
CGHV1F006S-AMP1 5.85 - 7.2 GHz Class A/B 50 V
CGHV1F006S-AMP2 7.9 - 8.4 GHz Class A/B 28 V
CGHV1F006S-AMP3 8.5 - 9.6 GHz Class A/B 28 V
CGHV1F006S-AMP4 4.9 - 5.9 GHz Class A/B 50 V
2CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Notes
Drain-Source Voltage VDSS 100 Volts 25˚C
Gate-to-Source Voltage VGS -10, +2 Volts 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 1.2 mA 25˚C
Maximum Drain Current1IDMAX 0.95 A 25˚C
Soldering Temperature2TS245 ˚C
Case Operating Temperature3,4 TC-40, +150 ˚C
Thermal Resistance, Junction to Case5RθJC 14.5 ˚C/W 85˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/rf/document-library
3 Simulated at PDISS = 2.4 W
4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal
resistance.
5 The RTH for Cree’s application circuit, CGHV1F006S-AMP, with 31 (Ø11 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 3.9°C/W. The total RTH
from the heat sink to the junction is 14.5°C/W + 3.9°C/W = 18.4°C/W.
Electrical Characteristics (TC = 25˚C) - 40 V Typical
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -3.6 -3.0 -2.4 VDC VDS = 10 V, ID = 1.2 mA
Gate Quiescent Voltage VGS(Q) –-2.7 – VDC VDS = 40 V, ID = 60 mA
Saturated Drain Current2IDS –-1.0 –AVDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage V(BR)DSS 100 – – VDC VGS = -8 V, ID = 1.2 mA
RF Characteristics3 (TC = 25˚C, F0 = 6.0 GHz unless otherwise noted)
Gain G – 16 - dB VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm
Output Power4POUT –38.5 –dBm VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Drain Efciency4η–55 - % VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Output Mismatch Stress4VSWR - 10 : 1 - YNo damage at all phase angles,
VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Dynamic Characteristics
Input Capacitance5CGS –1.3 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
Output Capacitance5CDS –0.31 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD –0.04 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in CGHV1F006S-AMP
4 Pulsed 100 µs, 10% duty cycle
5 Includes package
3CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Electrical Characteristics When Tested in CGHV1F006S-AMP1 at C-Band Under OQPSK
Characteristics Symbol Min. Typ. Max. Units Conditions
RF Characteristics1 (TC = 25˚C, F0 = 5.8 - 7.2 GHz unless otherwise noted)
Gain G – 17.5 - dB VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm
Output Power2POUT –39 –dBm VDD = 40 V, IDQ = 60 mA, PIN = 27 dBm
Drain Efciency2η–55 - % VDD = 40 V, IDQ = 60 mA, PIN = 27 dBm
OQPSK3ACLR - -36 - dBc VDD = 40 V, IDQ = 60 mA, POUT = 33 dBm
Output Mismatch Stress2VSWR –10 : 1 –YNo damage at all phase angles,
VDS = 40 V, Vgs = -8 V, PIN = 27 dBm
Notes:
1 Measured in CGHV1F006S-AMP1 Application Circuit
2 Pulsed 100 µs, 10% duty cycle
3 OQPSK modulated signal, 1.6 msps, PN23, Alpha Filter = 0.2 Offset = 1.6 MHz
Typical Performance - CGHV1F006S-AMP1 at C-Band Under OQPSK
Figure 1. - Typical Small Signal Response of CGHV1F006S-AMP1 Application Circuit
VDD = 40 V, IDQ = 60 mA
0
10
20
30
Magnitude (dB)
-30
-20
-10
5.0 5.5 6.0 6.5 7.0 7.5 8.0
Magnitude (dB)
Frequency (GHz)
S11
S21
S22
4CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance in Application Circuit CGHV1F006S-AMP1
Figure 2. - Typical Gain, Efciency and OQPSK Performance vs Frequency
POUT = 33 dBm. VDD = 40 V, IDQ = 60 mA
Figure 3. - Typical Gain, Efciency and OQPSK Performance vs Input Power OQPSK Transfer
Frequency = 7.2 GHz, VDD = 40 V, IDQ = 60 mA
-30
-25
-20
-15
20
25
30
35
OQPSK Offset (dBc)
Gain (dB)
Efficiency (%)
CGHV1F006S OQPSK Transfer @ 7.2GHz
DEff
Gain_
-Oset_
+Oset_
-50
-45
-40
-35
0
5
10
15
10 15 20 25 30 35
OQPSK Offset (dBc)
Gain (dB)
Efficiency (%)
Input Power (dBm)
Efciency
Gain
Offset
Efciency
Gain
Oset
-20
-15
-10
-5
0
20
25
30
35
40
OQPSK Offset (dBc)
Gain (dB) and Efficiency (%)
CGHV1F006S OQPSK Performance at 33dBm
Efficiency
Gain
Offset
-40
-35
-30
-25
0
5
10
15
5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2
OQPSK Offset (dBc)
Gain (dB) and Efficiency (%)
Frequency (GHz)
Offset
Gain
Efciency
5CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance in Application Circuit CGHV1F006S-AMP1
Figure 4. - Typical Pulsed Power Response
VDD = 40 V, IDQ = 60 mA, 100 µs, 10% Duty, PIN = 27 dBm
CGHV1F006S-AMP1 Application Circuit
Bill of Materials, OQPSK
Designator Description Qty
R1 RES, 15, OHM, +1/-1%, 1/16 W, 0402 1
R2 RES, 100, OHM, +1/-1%, 1/16 W, 0603 1
C1, C14 CAP, 1.8 pF, ±0.1 pF, 0402, ATC 2
C2 CAP, 2.0 pF, ±0.1 pF, 0402, ATC 1
C3, C8 CAP, 1.5 pF, ±0.1 pF, 0402, ATC 2
C4 CAP, 10 pF, ±5%, 0603, ATC 1
C5, C10 CAP, 470 pF, 5%, 100 V, 0603, X 2
C6, C11 CAP, 33000 pF, 0805, 100V, X7R 2
C7 CAP, 10 UF, 16 V, TANTALUM 1
C9 CAP, 20 pF, ±5%, 0603, ATC 1
C12 CAP, 1.0 UF, 100V, 10% X7R, 1210 1
C13 CAP, 33 UF, 20%, G CASE 1
J1, J2 CONN, SMA, PANEL MOUNT JACK, FLANGE 2
PCB, RT5880, 0.020” THK, CGHV1F006S 1
J3 HEADER RT>PLZ .1CEN LK 5POS 1
Q1 QFN TRANSISTOR CGHV1F006S 1
55
60
65
70
75
38.0
38.5
39.0
39.5
40.0
Dra
in Efficiency (%)
35
40
45
50
36.0
36.5
37.0
37.5
5.70 5.90 6.10 6.30 6.50 6.70 6.90 7.10 7.30
Dra
in Efficiency (%)
Frequency (GHz)
Output Power
Drain Efficiency
CGHV1F006S-AMP1 Application Circuit
6CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGHV1F006S-AMP1 Application Circuit Schematic, OQPSK
CGHV1F006S-AMP1 Application Circuit Outline, OQPSK
C3
1.5 pF
C6
0.033
C7
10
C9
20 pF C10
470 pF
C13
33
C4
10 pF
C14
1.8 pF
C11
0.033 C12
1
1
2
3
Q1
C1
1.8 pF
C8
1.5 pF
R2
100 Ohm
C5
470 pF
C2
2.0 pF
R1
15 Ohm
12345 J3
J1
J2
Vd=+40V
GND
Vg=-2.0V to -3.5V typ
7CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Electrical Characteristics When Tested in CGHV1F006S-AMP2 at X-Band, SATCOM
Characteristics Symbol Min. Typ. Max. Units Conditions
RF Characteristics1 (TC = 25˚C, F0 = 7.9 - 8.4 GHz unless otherwise noted)
Gain G – 15 - dB VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm
Output Power2POUT –39 –dBm VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Drain Efciency2η–55 - % VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
OQPSK3ACLR - -37 - dBc VDD = 40 V, IDQ = 60 mA, POUT = 33 dBm
Output Mismatch Stress2VSWR –10 : 1 – Y No damage at all phase angles,
VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Notes:
1 Measured in CGHV1F006S-AMP2 Application Circuit
2 Pulsed 100 µs, 10% duty cycle
3 OQPSK modulated signal, 1.6 msps, PN23, Alpha Filter = 0.2 Offset = 1.6 MHz
Typical Performance in Application Circuit CGHV1F006S-AMP2 at X-Band, SATCOM
Figure 5. - Typical Small Signal Response of CGHV1F006S-AMP2 Application Circuit
VDD = 40 V, IDQ = 60 mA
0
10
20
30
Magnitude (dB)
-30
-20
-10
7.0 7.2 7.4 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0
Magnitude (dB)
Frequency (GHz)
S21
S11
S22
8CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance in Application Circuit CGHV1F006S-AMP2
Figure 6. - Typical OQPSK Response
VDD = 40 V, IDQ = 60 mA, 1.6 MSPS, POUT = 33 dBm
Typical Performance in Application Circuit CGHV1F006S-AMP2
Figure 7. - OQPSK Transfer Response
VDD = 40 V, IDQ = 60 mA, 1.6 MSPS, Frequency = 8.4 GHz
POUT
-
35
-34
-33
-32
-31
-30
15
20
25
30
35
40
ACLR (dBc)
Gain (dB) & Drain Efficiency (%)
Gain
Drain Efficiency
ACLR
-38
-37
-36
-
35
0
5
10
15
7.90 7.95 8.00 8.05 8.10 8.15 8.20 8.25 8.30 8.35 8.40
Gain (dB) & Drain Efficiency (%)
Frequency (GHz)
ACLR
Gain
Drain Efciency
-30
-25
-20
-15
-10
15
20
25
30
35
OQPSK Offset (dBc)
Gain (dB) and Drain Efficiency (%)
Gain
Eff
-Oset
+Oset
-45
-40
-35
0
5
10
15 20 25 30 35 40
OQPSK Offset (dBc)
Gain (dB) and Drain Efficiency (%)
Output Power (dBm)
9CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance in Application Circuit CGHV1F006S-AMP2
Figure 8. - Typical Pulsed Power Response
VDD = 40 V, IDQ = 60 mA, 100 µs, 10% Duty, PIN = 28 dBm
CGHV1F006S-AMP2 Application Circuit
Bill of Materials, SATCOM
Designator Description Qty
R1 RES, 15, OHM, +1/-1%, 1/16 W, 0402 1
R2 RES, 100, OHM, +1/-1%, 1/16 W, 0603 1
C2, C3, C8 CAP, 1.0 pF, ±0.05 pF, 0402, ATC 3
C1, C14 CAP, 10 pF, ±5%, 0603, ATC 2
C4 CAP, 10pF, ±5%, 0603, X 1
C5,C10 CAP, 470pF, 5%, 100V, 0603, X 2
C6, C11 CAP, 33000 pF, 0805, 100V, X7R 2
C7 CAP, 10 UF, 16 V, TANTALUM 1
C9 CAP, 20 pF, ±5%, 0603, ATC 1
C12 CAP, 1.0 UF, 100V, 10% X7R, 1210 1
C13 CAP, 33 UF, 20%, G CASE 1
J1, J2 CONN, SMA, PANEL MOUNT JACK, FLANGE 2
J3 HEADER RT>PLZ .1CEN LK 5POS 1
Q1 QFN TRANSISTOR CGHV1F006S 1
55
60
65
70
75
38.0
38.5
39.0
39.5
40.0
Drain Efficiency (%)
Output Power (dBm)
35
40
45
50
36.0
36.5
37.0
37.5
7.80 7.90 8.00 8.10 8.20 8.30 8.40 8.50
Drain Efficiency (%)
Output Power (dBm)
Frequency (GHz)
Output Power
Drain
Efficiency
Drain Efciency
Output Power
CGHV1F006S-AMP2 Application Circuit
10 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGHV1F006S-AMP2 Application Circuit Schematic, SATCOM
CGHV1F006S-AMP2 Application Circuit Outline, SATCOM
C3
1.0 pF
C6
0.033
C7
10
C9
20 pF C10
470 pF
C13
33
C4
10 pF
C14
1.0 pF
C11
0.033 C12
1
1
2
3
Q1
C1
1.0 pF
C8
1.0 pF
R2
100 Ohm
C5
470 pF
C2
1.0 pF
R1
15 Ohm
12345 J3
J1
J2
Vd=+40V
GND
Vg=-2.0V to -3.5V typ
11 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Electrical Characteristics When Tested in CGHV1F006S-AMP3 at X-Band, RADAR
Characteristics Symbol Min. Typ. Max. Units Conditions
RF Characteristics1 (TC = 25˚C, F0 = 8.5 - 9.6 GHz unless otherwise noted)
Gain G – 14.5 - dB VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm
Output Power2POUT –38.5 –dBm VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Drain Efciency2η–52 - % VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Output Mismatch Stress2VSWR –10 : 1 – Y VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Notes:
1 Measured in CGHV1F006S-AMP3 Application Circuit
2 Pulsed 100 µs, 10% duty cycle
Typical Performance in Application Circuit CGHV1F006S-AMP3 at X-Band, RADAR
Figure 9. - Typical Small Signal Response
VDD = 40 V, IDQ = 60 mA
0
10
20
30
Magnitude (dB)
-30
-20
-10
7.5 8.0 8.5 9.0 9.5 10.0 10.5
Magnitude (dB)
Frequency (GHz)
S21
S11
S22
12 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance in Application Circuit CGHV1F006S-AMP3
Figure 10. - Typical Pulsed Power Response
VDD = 40 V, IDQ = 60 mA, 100 µs, 10% Duty, PIN = 28 dBm
CGHV1F006S-AMP3 Application Circuit
Bill of Materials, RADAR
Designator Description Qty
R1 RES, 15, OHM, +1/-1%, 1/16 W, 0402 1
R2 RES, 100, OHM, +1/-1%, 1/16 W, 0603 1
C1, C14 CAP, 1.0 pF, ±0.05 pF, 0603, ATC 2
C2 CAP, 1.0 pF, ±0.05 pF, 0402, ATC 1
C3, C8 CAP, 0.8 pF, ±0.05 pF, 0402, ATC 2
C4 CAP, 10 pF, ±5%, 0603, ATC 1
C5, C10 CAP, 470 pF, 5%, 100 V, 0603, X 2
C6, C11 CAP, 33000 pF, 0805, 100V, X7R 2
C7 CAP, 10 UF, 16 V, TANTALUM 1
C9 CAP, 20 pF, ±5%, 0603, ATC 1
C12 CAP, 1.0 UF, 100V, 10% X7R, 1210 1
C13 CAP, 33 UF, 20%, G CASE 1
J1, J2 CONN, SMA, PANEL MOUNT JACK, FLANGE 2
J3 HEADER RT>PLZ .1CEN LK 5POS 1
Q1 QFN TRANSISTOR CGHV1F006S 1
55
60
65
70
75
38.0
38.5
39.0
39.5
40.0
Drain Efficiency (%)
Output Power (dBm)
35
40
45
50
36.0
36.5
37.0
37.5
8.4 8.6 8.8 9.0 9.2 9.4 9.6
Drain Efficiency (%)
Output Power (dBm)
Frequency (GHz)
Output Power
Drain Efficiency
Drain Efciency
Output Power
CGHV1F006S-AMP3 Application Circuit
13 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGHV1F006S-AMP3 Application Circuit Schematic, RADAR
CGHV1F006S-AMP3 Application Circuit Outline, RADAR
C3
0.8 pF
C6
0.033
C7
10
C9
20 pF C10
470 pF
C13
33
C4
10 pF
C14
1.0 pF
C11
0.033 C12
1
1
2
3
Q1
C1
1.0 pF
C8
0.8 pF
R2
100 Ohm
C5
470 pF
C2
1.0 pF
R1
15 Ohm
12345 J3
J1
J2
Vd=+40V
GND
Vg=-2.0V to -3.5V typ
14 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Electrical Characteristics When Tested in CGHV1F006S-AMP4 at 802.11
Characteristics Symbol Min. Typ. Max. Units Conditions
RF Characteristics1 (TC = 25˚C, F0 = 4.9 - 5.9 GHz unless otherwise noted)
Gain G – 13 - dB VDD = 20 V, IDQ = 30 mA, PIN = 27 dBm
Drain Efciency2η–27 - % VDD = 20 V, IDQ = 30 mA, PIN = 27 dBm
OQPSK3ACLR - -43 - dBc VDD = 20 V, IDQ = 30 mA, POUT = 27 dBm
Output Mismatch Stress2VSWR –10 : 1 – Y No damage at all phase angles,
VDD = 20 V, IDQ = 30 mA, PIN = 27 dBm
Notes:
1 Measured in CGHV1F006S-AMP4 Application Circuit
2 Single carrier WCDMA, 3GPP Test Model 1, G4 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% probability on CCDF
Typical Performance - CGHV1F006S-AMP4 at 802.11
Figure 11. - Typical Small Signal Response
VDD = 20 V, IDQ = 30 mA
0
10
20
30
Magnitude (dB)
-30
-20
-10
4.0 4.5 5.0 5.5 6.0 6.5 7.0
Magnitude (dB)
Frequency (GHz)
S11
S21
S22
15 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance in Application Circuit CGHV1F006S-AMP4
Figure 12. - Typical Gain, Efciency and WCDMA Performance vs Frequency
VDD = 20 V, IDQ = 30 mA, POUT = 27 dBm
CGHV1F006S-AMP4 Application Circuit
Bill of Materials at 802.11
Designator Description Qty
R1, R3 RES, 1, OHM, +/-1%, 1/16 W, 0402 2
R2 RES, 51.1, OHM, +/-1%, 1/16W, 0603 1
C2, C6, C11 CAP, 1.8 pF, +/-0.1 pF, 0603, ATC 3
C1 CAP, 0.2 pF, +/-0.05 pF, 0402, ATC 1
C3, C7, C12 CAP, 470 pF, 5%, 100 V, 0603, X 3
C4, C8, C13 CAP, 33000 pF, 0805, 100 V, X7R 3
C5 CAP, 10 UF, 16 V, TANTALUM 1
C15 CAP, 6.8 pF, ±0.25 pF, 100 V, 0603 1
C9, C14 CAP, 1.0 UF, 100V, 10% X7R, 1210 2
C10 CAP, 33 UF, 20%, G CASE 1
J1, J2 CONN, SMA, PANEL MOUNT JACK, FLANGE 2
PCB, RT5880, 0.020” THK, CGHV1F006S 1
BASEPLATE, CGH35015, 2.60 X 1.7 1
J3 HEADER RT>PLZ .1CEN LK 5POS 1
2-56 SOC HD SCREW 1/4 SS 4
#2 SPLIT LOCKWASHER SS 4
Q1 QFN TRANSISTOR CGHV1F006S 1
-41
-40
-39
-38
-37
20
25
30
35
40
ACLR (dBc)
Gain (dB) & Drain Efficiency (%)
Gain
Drain Efficiency
ACLR
-45
-44
-43
-42
0
5
10
15
4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9
ACLR (dBc)
Gain (dB) & Drain Efficiency (%)
Frequency (GHz)
ACLR
Gain
Drain Efciency
CGHV1F006S-AMP4 Application Circuit
16 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGHV1F006S-AMP4 Application Circuit Schematic
CGHV1F006S-AMP4 Application Circuit Outline
Efciency
Gain
Offset
17 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGHV1F006S Power Dissipation De-rating Curve
Figure 13. - CGHV1F006S Transient Power Dissipation De-Rating Curve
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C
6
8
10
12
Power Dissipation (W)
0
2
4
0 25 50 75 100 125 150 175 200 225 250
Power Dissipation (W)
Maximum CaseTemperature ( C)
Note 1
18 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Source and Load Impedances
Frequency (GHz) Z Source Z Load
149.67 + j32.81 184.11 + j6.66
3 11.54 + j3.96 38.83 + j56.37
65.94 - j17.97 13.03 + j16.16
10 11.87 - j77.62 11.79 - j17.43
12 47.42 - j205.35 16.39 - j46.22
15 33.78 + j251.03 163.61 - j268.44
Note1: VDD = 40 V, IDQ = 60 mA
Note2: Impedances are extracted from source and load pull data derived from the transistor.
D
Z Source Z Load
G
S
19 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Dimensions CGHV1F006S (Package 3 x 4 DFN)
Pin Input/Output
1GND
2NC
3RF IN
4RF IN
5NC
6GND
7 GND
8NC
9 RF OUT
10 RF OUT
11 NC
12 GND
Note: Leadframe nish for 3x4 DFN package is Nickel/Palladium/Gold. Gold is the outer layer.
20 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Part Number System
Parameter Value Units
Upper Frequency115.0 GHz
Power Output 6W
Package Surface Mount -
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code Code Value
A0
B1
C2
D 3
E4
F5
G 6
H7
J 8
K 9
Examples: 1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
CGHV1F006S
21 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Ordering Information
Order Number Description Unit of Measure Image
CGHV1F006S GaN HEMT Each
CGHV1F006S-AMP1
Test board with GaN HEMT installed,
5.85 - 7.2 GHz, 50 V
C-Band under OQPSK
Each
CGHV1F006S-AMP2
Test board with GaN HEMT installed,
7.9 - 8.4 GHz, 28 V
X-Band SATCOM
Each
CGHV1F006S-AMP3
Test board with GaN HEMT installed,
8.5 - 9.6 GHz, 28 V
X-Band RADAR
Each
CGHV1F006S-AMP4
Test board with GaN HEMT installed,
4.9 - 5.9 GHz, 50 V
802.11
Each
CGHV1F006S-TR Delivered in Tape and Reel 250 parts / reel
22 CGHV1F006S Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.313.5639
Mouser Electronics
Authorized Distributor
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