UUAHUATANUNAAUUII INVERTER SCRs 700 TO 1500 AMPERES GE TYPE c648 C612 C613 C712 AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING CONSTRUCTION GATE GATE GATE GATE ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION I conduction T(RMS) @ Te = 65C, 50% (A) @ 60 Hz @ 600 Hz @ 1200 Hz @ 2500 Hz @ 5000 Hz Max. peak one cycle, non-repetitive current (A) ir 5 to msec (A? sec) Max. thermal impedance (C/W) Typical turn-on time (usec) Turn-off time @ rated voltage and T, Va = 50V min. (usec) @ 20V/usec @ 200V/usec reapplied @ 400V/yusec reapplied . -rise on-state current ditt (a/usec) Ty Junction operating temperature range (C) BLOCKING Min. critical rate-of-rise of off-state dv/dt voltage exponential to rated Vo nm @ Max. T) (V/usec) FIRING 1 Max. required gate current to trigger (mA) = cT @ 40C @ 125C Vet Max. required voltage to trigger (V) @ 125C VOLTAGE TYPES Repetitive Peak Forward and Reverse Voltages 100 200 300 400 600 2000 PACKAGE TYPE PACKAGE QUTLINE NO. 150 1500-1800 = {860-2000 = 1500-2000 1500 1500 1500 1500 1100 20,000 1,660,000 023 C612PE C712PE C612PM C712PM C612PS C712PS C612PN C712PN - C712PT - c712L 1 PRESS PAK 1 PRESS PAK 276 276.1High Speed Silicon C712 Controlled Rectifier 1000A Avg. Up to 2000 Volts The General Electric device type C712 is a new pressure-mounted, high current SCR designed for power switching at high voltage and high frequen- cies (up to 5 KHz). The C712 gate structure has an involute, interdigitated pattern to optimize the turn-on area for high di/dt capability and it is pro- cessed using a newly developed multi-diffusion technology. FEATURES: e Off-State and Reverse Blocking Capabilities to 2000 Volts. e Very Low Switching Losses at High Frequencies. 60 ysec Maximum Turn-Off Time at Severe Operating Conditions with Feedback diode, Involute, Interdigitated Gate for High di/dt Capability. Narrow Pulse Capability for PWM Inverter Commutating SCR Socket. e 1 Creepage-Path, Glazed-Ceramic Package. IMPORTANT: Mounting instructions on the last page of C702 specification must be followed. MAXIMUM ALLOWABLE RATINGS Vormw/Varm! VormM/Varm! TRANSIENT PEAK REVERSE TYPE REPETITIVE REPETITIVE VOLTAGE, Vasu! Ty = -40C to +125C Ty = OC to +125C Ty = -40C to +125C C712L 2000 Volts 2100 Volts 2100 Volts C712PT 1900 2000 2000 C712PN 1800 1900 1900 C712PS 1700 1800 1800 C712PM 1600 1700 1700 C71 2PE 1500 1600 1600 Consult factory for lower rated voltage devices. Peak One-Cycle Surge On-State Current, Ipgy (8-3 msec) .... 2.0... ee eee ee ee eee 20,000 Amperes Maximum Rate-of-Rise of Anode Current Turn-On Interval (Switching From 1200 Volts).............. 800 A/ysec Repetitive di/dt Rating? . 0... ee eee ete een e eens 200 A/ysec I*t (for fusing) (at 8.3 milliseconds) ... 2.0... cee ee tee eens 1,660,000 Ampere? Seconds Peak Gate Power Dissipation, Pag... ---- ee ee ee ee ee eee eee 100 Watts Average Gate Power Dissipation, Peyav)--- 0 ee ee eee eee en eee 5 Watts Peak Reverse Gate Voltage, VaRM -- 10 etc ee ee ee en ee ee ee eee ee 20 Volts Storage and Operating Temperature, Tspg and Ty ...- 2... ee ee te eee -40C to +125C Mounting Force Required 6.1... ee ne 5000 Lb. + 1000 0 Lb. 22.2 KN + 4.4--0 KN NOTES: 110 msec voltage sinewave. 2di/dt rating established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2. This di/dt is in addition to the discharge of a 0.25 uf, 20 ohm snubber circuit in parallel with the DUT. 1041CHARACTERISTICS C712 TEST symBoL| MIN. | TYP. | MAX. | UNITS TEST CONDITIONS Peak Reverse and On- IprM - 20 60 mA Ty = +125C, V = Vporm = Varo State Blocking Current and TRRM Effective Thermal Resist- RIC - 023 | C/Watt | Double-Side Cooled (DC) ance, Junction-to-Case Critical Linear Rate-of-Rise | dv/dt 500 _ Viusec } Ty = +125C, Vprm = .80 Rated Verm of Forward Blocking Volt- Gate Open. age (Higher values may cause device switching) Delay Time tq - 1.5 _ psec Switching from 140 Volts, 20 Volt, 10 Ohm Gate 0.5 usec Rise Time, Ty = 25C Gate Pulse Width _ 10 psec | Ty = 25C Necessary To Trigger Gate Trigger Current Iot ~ 120 mAdc | Tc = 25C, Vp = 10 Vde, Ry = 3 Ohms 5.0 30 To = 125C, Vp = .5 x Rated, Ry = 1000 Ohms Gate Trigger Voltage Vor - 3.0 ~ Vde Tc = 0C to 125C, Vp = 10 Vdc, Ry = 3 Ohms Peak On-State Voltage Vim - _ 1.45 Volts Te = +125C, Ip = 1000 Amps. Peak Duty Cycle S 0.01% Conventional Circuit Com- tq _ _ 50 psec (1) Te = +125C mutated Turn-Off Time (2) Ip = 500 Amps. (With Reverse Voltage) (3) Vy = 50 Volts (4) 80% Vprm Reapplied (5) Rate-of-Rise of Forward Blocking Volt- age = 200 V/usec (6) Gate Bias = Open During Turn-Off Interval = 0 Volts, 100 Ohms (7) Duty Cycle < 0.01% Conventional Circuit Com- tg 55 60 psec (1) Te = +125C mutated Turn-Off Time (2) Iz = 500 Amps. (With Feedback Diode) (3) Vp = 2 Volts Min. (4) 80% Vprm Reapplied (5) Rate-of-Rise of Forward Blocking Volt- age = 200V/usec. (6) Gate Bias = Open During Turn-Off Interval (7) Duty Cycle < 0.01% PEAK FORWARD CURRENT (KILOAMPS) PEAK FORWARD CURRENT (KILOAMPS) Te= 65C Te 50 100 += 200 -~= 400 6008001000 2000 40006000800010000 50 100 200 400 6008001000 2000 4000 6000800010000 PULSE BASE WIDTH (yn SEC) PULSE BASE WIDTH (2 SEC) 1. MAXIMUM ALLOWABLE PEAK ON-STATE 2. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. PULSE WIDTH AT Tg = 65C CURRENT VS. PULSE WIDTH AT Tg = 90C 1042PEAK FORWARD CURRENT (KILOAMPS) LSE NOTES: 1. Switching capability and losses with bypass diode. 2. Switching voltage from 15 Volts to 0.8 Voriy. 3. Snubber discharge <. 50 Amps. RC time constant <.10 Usec. 4. High gate drive, 20V/10 Ohms, 0.5 usec rise time. PWof 1900 2900 PULSE BASE WIDTH (uSEC) 3. ENERGY PER PULSE FOR SINUSOIDAL PULSES 5900 lopoo FORWARD CURRENT (KILOAMPS) FORWARD CURRENT (KILOAMPS) Te = 65C Te = 90C FORWARD CURRENT (KILOAMPS) 100 200 500 1000 2,000 5,000 10,000 60 500 1,000 2,000 5,000 10,000 PULSE BASE WIDTH (i sec } PULSE BASE WIDTH - { a. sec) MAXIMUM ALLOWABLE PEAK ON-STATE 5. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT FOR TRAPEZOIDAL CURRENT CURRENT FOR TRAPEZOIDAL CURRENT WAVEFORMS FOR Tg = 65C WAVEFORMS FOR Tg = 90C 20= WATT/SEC/ PULSE NOTES: 1. Switching voltage from 15 Voits to 0.8 Voram- 2. Di/DT during turn-on: 100A/psec. 3 Reverse voltage <. 50 Volts. If no bypass diode is used, recovery switching losses must be added. 4, RC snubber time constant < 10 psec. 5. High gate drive: 20V/10 Ohrns, 0.5 usec rise time. PULSE BASE (wSEC) 6. ENERGY PER PULSE FOR TRAPEZOIDAL CURRENT WAVEFORMS 1043C712 | 10,000 5,000 712 FORWARD DUCT! a 20000 C 7l2 FO CONDUCTION 2 5 10p00 3 & 8000 3 2,000 6000 g 3B 4000 = 1,000 w = - 5 2000 o z (p00 5 500 800 B 600 = 400 < 9 200 200 uw 100 100 4 2 3 4 5 6 7 8 ON~ STATE VOLTAGE di/dt (AMPS/aisec ) 7. FORWARD CONDUCTION CHARACTERISTIC 8. RECOVERED CHARGE (125C) ON-STATE .05 04 NOTES: ~ & 1. Add .006C/W to account for both case to dissipator = 02 interfaces when properly mounted; e.g., R@ys = .029 C/W. See Mounting Instructions. 3 2. DC Thermal Impedance is based on average full cycle 4 Oi junction temperature. Instantaneous junction tempera- # .008 ture may be calculated using the following modi- = 006 fications: 3 @ end of conducting portion of cycle & 004 120 sq. wave add .0025C/W along entire curve z= ~ 180 sq. wave add .0018C/W along entire curve 5 ~ 180 sine wave add .0010C/W along entire curve R 002 end of full cycle a ~ any wave, subtract .001C/W along entire curve E OOl or 02.04 06 08 2 4 681 2. 45 TIME - SECONDS 9. TRANSIENT THERMAL RESISTANCE JUNCTION-TO-CASE NOTES: 2 If no bypass diode is used with this thyristor, the switching losses during recovery can be significant. The actual magnitude of these losses will vary widely depending on circuit conditions and snubber design. ~ a This curve represents typical recovery losses versus circuit di/dt. Since 2g a this curve is typical, it serves primarily to alert the equipment designer . 1 to the possible need for special design attention. The switching losses ra in a given circuit may be calculated with the following equation: o Pa SLR =f, T(t) .VA) at o Where SLR is the recovery switching losses; I (t) is the recovery current 3 05 decay; V(t) is the recovery voitage; and t = o occurs at the peak of the ~ | recovery current. I (t) may be expressed as an exponential decay: g > I(t) =Ige (t/T) t Where Ip is the peak recovery current and T = 2.5hsec. The junction temperature rise due to the recovery losses may be computed as follows: Ip 0.2 36 3040506076 80 90 100 200 AT, =F * On * ROA + Aq* 35 di/dt (A4, SEC) 10. RECOVERY CURRENT Where 0 is the recovery losses, R@ ya, is the DC junction to ambient thermal impedance, eat and F is the operating frequency.OUTLINE DRAWING Seas CATHODE 25.40 | 2718 3.45 | 3.71 ANODE ELEMENTARY DIAG. TERM. D - gE 4 , 0.76 PLATED oD | sr ay ea rere? 4 SEE NOTE | B TERMINAL SEE NOTE 2 $ RED WIRE Cc . 1045