© 2011 IXYS CORPORATION, All Rights Reserved
IXTH24N50L
DS99125B(01/11)
LinearTM Power MOSFET
w/ Extended FBSOA
VDSS = 500V
ID25 = 24A
RDS(on) ≤≤
≤≤
≤ 300mΩΩ
ΩΩ
Ω
Features
•Designed for Linear Operation
•International Standard Package
•Avalanche Rated
•Molding Epoxy Meets UL94 V-0
Flammability Classification
Advantages
•Easy to Mount
•Space Savings
•High Power Density
Applications
•Programmable Loads
•Current Regulators
•DC-DC Converters
•Battery Chargers
•DC Choppers
•Temperature and Lighting Controls
G = Gate D = Drain
S = Source Tab = Drain
TO-247
G
S Tab
D
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C 24 A
IDM TC= 25°C, Pulse Width Limited by TJM 50 A
IATC= 25°C12 A
EAS TC= 25°C 1.5 J
PDTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 seconds 260 °C
MdMounting Torque 1.13 / 10 Nm/lb.in.
Weight 6 g
N-Channel Enhancement Mode
Avalanche Rated
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V
VGS(th) VDS = VGS, ID = 250μA 3.5 6.0 V
IGSS VGS = ±30V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 500 μA
RDS(on) VGS = 20V, ID = 0.5 • ID25, Note 1 300 mΩ
IXTH24N50L
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 3 7 11 S
Ciss 2500 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 400 pF
Crss 100 pF
td(on) 35 ns
tr 85 ns
td(off) 110 ns
tf 75 ns
Qg(on) 160 nC
Qgs VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 nC
Qgd 50 nC
RthJC 0.31 °C/W
RthCS 0.21 °C/W
Safe-Operating-Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA VDS = 400V, ID = 0.5A, TC = 60°C 200 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 24 A
ISM Repetitive, Pulse Width Limited by TJM 96 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 500 ns
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7Ω (External)
IF = IS, -di/dt = 100A/μs
VR = 100V, VGS = 0V
© 2011 IXYS CORPORATION, All Rights Reserved
IXTH24N50L
Fi g. 2. Extend ed Output Cha racte ristics
@ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
0 3 6 9 12 15 18 21 24 27 30
V
D S
- V o l ts
I
D
- Am peres
V
GS
= 20V
16V
14V
8V
7V
12V
10V
9V
Fig. 3. Output Characte ri stics
@ T
J
= 125ºC
0
4
8
12
16
20
24
0 2 4 6 8 10 12 14 16 18 20
V
D S
- V o l ts
I
D
- Amperes
V
GS
= 20V
14V
9V
10V
12V
7V
6V
8V
Fig. 1. Output Characte ri stics
@ T
J
= 25ºC
0
4
8
12
16
20
24
012345678910
V
D S
- V o l ts
I
D
- Amperes
V
GS
= 20V
16V
14V
7V
6V
8V
9V
10V
12V
Fig . 4. R
DS(on)
Normalize d to 0.5 I
D25
V
alue
vs. Ju n cti on T emp er atu re
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Cent i grade
R
D S (on)
- Norma lized
I
D
= 12A
V
GS
= 20V
I
D
= 24A
Fig. 6. Drai n Curre nt vs. Ca se
Temperature
0
4
8
12
16
20
24
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
I
D
- Ampere s
Fig. 5. R
DS(on)
Normalize d to
0. 5 I
D25
Value vs. I
D
0.8
1.2
1.6
2
2.4
2.8
3.2
0 1020304050
I
D
- A mpere s
R
D S (on)
- Normalized
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 20V
IXTH24N50L
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 11. Capaci tance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- V ol ts
C apacitance - pF
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Ga te Cha rge
0
2
4
6
8
10
12
14
16
18
20
0 20 40 60 80 100 120 140 160
Q
G
- nanoCoulom bs
V
G S
- Volts
V
DS
= 250V
I
D
= 12A
I
G
= 10mA
Fig. 7. I nput Admitta nce
0
5
10
15
20
25
30
35
456789101112
V
G S
- V ol ts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconducta nce
0
2
4
6
8
10
12
14
0 5 10 15 20 25 30 35
I
D
- A m peres
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. S ource Current vs.
Source -To-Dra in V ol ta ge
0
10
20
30
40
50
60
70
80
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
S D
- V olts
I
S
- Amperes
T
J
= 125ºC T
J
= 25ºC
Fig. 12. Ma ximum Transient Thermal
Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
P ulse Widt h - second
Z
(t h) J C
-
(ºC/W)
© 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: T_24N50L(7N)01-10-11-C
IXTH24N50L
Fig. 13. Forw ard-Bi a s Safe
Operating Area @ T
C
= 25ºC
0.1
1
10
100
10 100 1000
V
D S
- V o l ts
I
D
- A m peres
100µs
1ms
DC
T
J
= 150ºC
TC = 25ºC
Single Pulse
R
DS
(on)
Limit
10ms
25µs
Fi g. 14. Forward-Bias S afe
Operating Area @ T
C
= 60ºC
0.1
1
10
100
10 100 1000
V
D S
- V ol ts
I
D
- A mperes
100µs
1ms
DC
R
DS(on)
Li m i t
T
J
= 150ºC
TC = 60º C
Single P ulse
25µs
10ms
