FQB22P10TM-F085 - FAIRCHILD SEMICONDUCTOR

BUK9880-55A

N-channel TrenchMOS logic level FET

19 March 2014 Product data sheet

1. General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

2. Features and benefits

•Low conduction losses due to low on-state resistance

•Q101 compliant

•Suitable for logic level gate drive sources

3. Applications

•12 V and 24 V loads

•Automotive and general purpose power switching

•Motors, lamps and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 55 V

IDdrain current VGS = 5 V; Tsp = 25 °C; Fig. 3; Fig. 2 - - 7 A

Ptot total power dissipation Tsp = 25 °C; Fig. 1 - - 8 W

Static characteristics

VGS = 10 V; ID = 8 A; Tj = 25 °C - 62 73 mΩ

VGS = 4.5 V; ID = 8 A; Tj = 25 °C - - 89 mΩ

RDSon drain-source on-state

resistance

VGS = 5 V; ID = 8 A; Tj = 25 °C; Fig. 13;

Fig. 14

- 68 80 mΩ

Avalanche ruggedness

EDS(AL)S non-repetitive drain-

source avalanche

energy

ID = 6 A; Vsup ≤ 55 V; RGS = 50 Ω;

VGS = 5 V; Tj(init) = 25 °C; unclamped

- - 36 mJ

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 2 / 13

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 D drain

3 S source

4 D drain

1 32

SC-73 (SOT223)

mbb076

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BUK9880-55A SC-73 plastic surface-mounted package with increased heatsink; 4

leads

SOT223

BUK9880-55A/CU SC-73 plastic surface-mounted package with increased heatsink; 4

leads

SOT223

7. Marking

Table 4. Marking codes

Type number Marking code

BUK9880-55A 988055A

BUK9880-55A/CU 988055

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 55 V

VDGR drain-gate voltage RGS = 20 kΩ - 55 V

VGS gate-source voltage -15 15 V

Ptot total power dissipation Tsp = 25 °C; Fig. 1 - 8 W

Tsp = 100 °C; VGS = 5 V; Fig. 2 - 4 AIDdrain current

Tsp = 25 °C; VGS = 5 V; Fig. 3; Fig. 2 - 7 A

IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 - 30 A

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 3 / 13

Symbol Parameter Conditions Min Max Unit

Tstg storage temperature -55 150 °C

Tjjunction temperature -55 150 °C

VGSM peak gate-source voltage pulsed; tp ≤ 50 µs -15 15 V

Source-drain diode

ISsource current Tsp = 25 °C - 7 A

ISM peak source current pulsed; tp ≤ 10 µs; Tsp = 25 °C - 30 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

ID = 6 A; Vsup ≤ 55 V; RGS = 50 Ω;

VGS = 5 V; Tj(init) = 25 °C; unclamped

- 36 mJ

EDS(AL)R repetitive drain-source

avalanche energy

Fig. 4 [1][2][3][4]--J

[1] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.

[2] Single-pulse avalanche rating limited by maximum junction temperature of 150 °C.

[3] Repetitive avalanche rating limited by an average junction temperature of 145 °C.

[4] Refer to application note AN10273 for further information.

Tsp (°C)

0 20015050 100

03aa17

120

Pder

(%)

Fig. 1. Normalized total power dissipation as a

function of solder point temperature

003aab787

0 50 100 150 200

Tsp (°C)

(A)

Fig. 2. Continuous drain current as a function of solder

point temperature

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 4 / 13

03nc54

10-2

10-1

102

103

10-1 1 10 102

VDS (V)

(A)

100 ms

10 ms

RDSon = VDS / ID

1 ms

tp= 10 µs

100 µs

δ =

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

003aab771

10-2

10-1

10-3 10-2 10-1 1 10

tAL (ms)

IAL

(A) (1)

(2)

(3)

Fig. 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance

from junction to solder

point

- - 15 K/W

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 5 / 13

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance

from junction to

ambient

Fig. 5 - 120 - K/W

03nc55

Single Shot

0.2

0.1

0.05

0.02

10-2

10-1

102

10-6 10-5 10-4 10-3 10-2 10-1 1 10 102

tp(s)

Zth(j-sp)

(K/W)

δ = 0.5

δ =

Fig. 5. Transient thermal impedance from junction to solder point as a function of pulse duration

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 50 - - VV(BR)DSS drain-source

breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 55 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C;

Fig. 12; Fig. 8

1 1.5 2 V

ID = 1 mA; VDS = VGS; Tj = 150 °C;

Fig. 12; Fig. 8

0.6 - - V

VGS(th) gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;

Fig. 12; Fig. 8

- - 2.3 V

VDS = 55 V; VGS = 0 V; Tj = 150 °C - - 500 µAIDSS drain leakage current

VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = 5 V; ID = 8 A; Tj = 150 °C;

Fig. 13; Fig. 14

- - 147 mΩ

VGS = 10 V; ID = 8 A; Tj = 25 °C - 62 73 mΩ

RDSon drain-source on-state

resistance

VGS = 4.5 V; ID = 8 A; Tj = 25 °C - - 89 mΩ

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 6 / 13

Symbol Parameter Conditions Min Typ Max Unit

VGS = 5 V; ID = 8 A; Tj = 25 °C; Fig. 13;

Fig. 14

- 68 80 mΩ

Dynamic characteristics

QG(tot) total gate charge - 11 - nC

QGS gate-source charge

ID = 10 A; VDS = 44 V; VGS = 5 V;

Fig. 11 - 1.6 - nC

QGD gate-drain charge ID = 10 A; VDS = 44 V; VGS = 5 V;

Fig. 15

- 4.6 - nC

Ciss input capacitance - 438 584 pF

Coss output capacitance - 87 104 pF

Crss reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 16

- 62 85 pF

td(on) turn-on delay time - 8 - ns

trrise time - 118 - ns

td(off) turn-off delay time - 20 - ns

tffall time

VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;

RG(ext) = 10 Ω; Tj = 25 °C

- 32 - ns

Source-drain diode

VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.85 1.2 V

trr reverse recovery time - 33 - ns

Qrrecovered charge

IS = 20 A; dIS/dt = -100 A/µs;

VGS = -10 V; VDS = 30 V; Tj = 25 °C - 60 - nC

03nc51

0 2 4 6 8 10

VDS (V)

(A)

VGS (V) = 10

2.2

3.4

2.4

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

03nc50

2 4 6 8 10

VGS (V)

RDSon

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 7 / 13

03aa36

10-6

10-5

10-4

10-3

10-2

10-1

0 1 2 3

VGS (V)

(A)

maxtypmin

Tj = 25 °C; VDS = 5 V

Fig. 8. Sub-threshold drain current as a function of

gate-source voltage

03nc48

0 5 10 15 20

ID(A)

gfs

(S)

Fig. 9. Forward transconductance as a function of

drain current; typical values

03nc49

0 1 2 3 4

VGS (V)

(A)

Tj= 150 °C

Tj= 25 °C

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

03nc47

0 5 10 15

QG(nC)

VGS

(V)

VDS = 44 V

VDS = 14 V

Fig. 11. Gate-source voltage as a function of turn-on

gate charge; typical values

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 8 / 13

03aa33

0.5

1.5

2.5

-60 0 60 120 180

Tj(°C)

VGS(th)

(V)

max

typ

min

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

03nc52

120

150

180

0 10 20 30 40

ID(A)

RDSon

(mΩ)

VGS (V) = 5

43.83.6

3.4

3.2

Fig. 13. Drain-source on-state resistance as a function

of drain current; typical values

03nc24

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

-60 -20 20 60 100 140 180

Tj(°C)

Fig. 14. Normalized drain source on-state resistance

factor as a function of junction temperature

03nc37

0 10 20 30

QG(nC)

VGS

(V)

VDD = 44 V

VDD = 14 V

Fig. 15. Gate-source voltage as a function of turn-on

gate charge; typical values

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 9 / 13

03nc53

200

400

600

800

1000

1200

10-2 10-1 1 10 102

VDS (V)

(pF)

Ciss

Coss

Crss

Fig. 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

03nc46

0.0 0.5 1.0 1.5 2.0

VSD (V)

(A)

Tj= 150 °C

Tj= 25 °C

Fig. 17. Reverse diode current as a function of reverse

diode voltage; typical value

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 10 / 13

11. Package outline

UNIT A1bpc D E e1HELpQ ywv

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.10

0.01

1.8

1.5

0.80

0.60

3.1

2.9

0.32

0.22

6.7

6.3

3.7

3.3 2.3

4.6 7.3

6.7

1.1

0.7

0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 04-11-10

06-03-16

detail X

vMA

0 2 4 mm

scale

1 32

Plastic surface-mounted package with increased heatsink; 4 leads SOT223

Fig. 18. Package outline SC-73 (SOT223)

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 11 / 13

12. Legal information

12.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

12.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local Nexperia

sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

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customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, Nexperia does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

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Notwithstanding any damages that customer might incur for any reason

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Right to make changes — Nexperia reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

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Suitability for use in automotive applications — This Nexperia

product has been qualified for use in automotive

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their

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products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 12 / 13

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grant, conveyance or implication of any license under any copyrights, patents

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between the translated and English versions.

12.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Nexperia BUK9880-55A

N-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 13 / 13

13. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information .............................................2

7 Marking ................................................................... 2

8 Limiting values .......................................................2

9 Thermal characteristics .........................................4

10 Characteristics .......................................................5

11 Package outline ................................................... 10

12 Legal information .................................................11

12.1 Data sheet status ............................................... 11

12.2 Definitions ...........................................................11

12.3 Disclaimers .........................................................11

12.4 Trademarks ........................................................ 12

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

19 March 2014