Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V21 A
IDM Pulsed Drain Current 110
PD @TA = 25°C Power Dissipation 3.7 W
PD @TC = 25°C Power Dissipation 88 W
Linear Derating Factor 0.59 W/°C
VGS Gate-to-Source Voltage ± 10 V
EAS Single Pulse Avalanche Energy 220 mJ
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
IRLZ34S/L
HEXFET® Power MOSFET
PD - 9.905A
lAdvanced Process Technology
lSurface Mount (IRLZ34S)
lLow-profile through-hole (IRLZ34L)
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
VDSS = 60V
RDS(on) = 0.050Ω
ID = 30A
2
D P a k
TO-262
8/25/97
S
D
G
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.7
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** – – – 4 0
Thermal Resistance
°C/W
Absolute Maximum Ratings
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ34L) is available for low-
profile applications.
°C
IRLZ34S/L
VDD = 25V, starting TJ = 25°C, L = 290µH
RG = 25Ω, IAS = 30A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ34 data and test conditions
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 30A, VGS = 0V
trr Reverse Recovery Time ––– 120 180 ns TJ = 25°C, IF = 30A
Qrr Reverse Recovery Charge ––– 700 1300 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
30
110
S
D
G
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 –– – –– – V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.05 VGS = 5.0V, ID = 18A
––– ––– 0.07 ΩVGS = 4.0V, ID = 15A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 12 ––– ––– S VDS = 25V, ID = 18A
––– ––– 25 µA VDS = 60V, VGS = 0V
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– – –– 100 VGS = 10V
Gate-to-Source Reverse Leakage ––– – –– -100 nA VGS = -10V
QgTotal Gate Charge –– – –– – 35 ID = 30A
Qgs Gate-to-Source Charge ––– –– – 7.1 nC VDS = 48V
Qgd Gate-to-Drain ("Miller") Charge ––– – –– 2 5 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = 30V
trRise Time ––– 17 0 ––– ID = 30A
td(off) Turn-Off Delay Time ––– 30 ––– RG = 6.0Ω
tfFall Time ––– 56 ––– RD = 1.0Ω, See Fig. 10
Between lead,
––– ––– and center of die contact
Ciss Input Capacitance ––– 1600 ––– VGS = 0V
Coss Output Capacitance ––– 660 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on) Static Drain-to-Source On-Resistance
IGSS
IDSS Drain-to-Source Leakage Current
LSInternal Source Inductance 7.5 nH
IRLZ34S/L
IRLZ34S/L
IRLZ34S/L
IRLZ34S/L
IRLZ34S/L
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Fig 14. For N-Channel HEXFETS
IRLZ34S/L
D2Pak Package Outline
D2Pak
Part Marking Information
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5.28 (.208)
4.78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15.49 (.610)
14.73 (.580)
3X 0.93 (.037)
0.69 (.027)
5.08 (.200)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX.
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENS ION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.25 (.010) M B A M MINIMUM RECOMM ENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
LE AD ASS IG NM EN TS
1 - GATE
2 - DRAIN
3 - SOURCE
2.54 ( .100)
2X
PART NUMBER
INTERNATIONAL
REC TIFIER
L OGO DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
AS SEMBLY
LOT CODE
F530S
9B 1M
9246
A
IRLZ34S/L
Package Outline
TO-262 Outline
TO-262
Part Marking Information
IRLZ34S/L
Tape & Reel Information
D2Pak
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
3
4
4
TRR
FE ED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1. 75 (.0 69)
1. 25 (.0 49)
11.60 (.457 )
11.40 (.449 ) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.5 0 (. 532)
12.8 0 (. 504)
330.00
(14.173)
M A X.
27.4 0 (1.079 )
23.9 0 (.9 41)
60.0 0 (2.36 2)
MIN.
30.4 0 (1.19 7)
MAX.
26.40 (1. 039)
24.40 (.961)
NO TES :
1. C O M F ORM S T O EIA -418.
2. CONTROLLING DIMENSIO N: MILLIME TER .
3. DIME NS ION M EAS URE D @ HUB .
4. INCLU DES FLAN GE DISTORTION @ OUTER ED GE.
