FSB50825TB - Fairchild Semiconductor

FSB50825TB Rev. A

FSB50825TB Smart Power Module (SPM®) - (BSH only)

February 2008

FSB50825TB

Smart Power Module (SPM®)

Features

• 250V 8.0A 3-phase FRFET inverter including high voltage

integrated circuit (HVIC)

• 3 divided negative dc-link terminals for inver ter current sens-

ing applications

• HVIC for gate driving and undervoltage protection

• 3/5V CMOS/TTL compatible, active-high interface

• Optimized for low electromagnetic interference

• Isolation voltage rating of 1500Vrms for 1min.

• Extended VB pin for PCB isolation

General Description

FSB50825TB is a tiny smart power module (SPM®) based on

FRFET technology as a compact inverter solution for small

power motor drive applications such as fan motors and water

suppliers. It is composed of 6 fast-recovery M OSFET (FRFET),

and 3 half-bridge HVICs for FRFET gate driving. FSB50825TB

provides low electromagnetic interference (EMI) char acteristics

with optimized switching speed. Moreover, since it employs

FRFET as a power switch, it has much better ruggedness and

larger safe operation area (SOA) than that of an IGBT-based

power module or one-chip solution. The package is optimized

for the thermal performance and compactness for the use in the

built-in motor application and any other application where the

assembly space is concerned. FSB50825TB is the most

solution for the compact inverter providing the energy efficiency,

compactness, and low electromagnetic interference.

Absolute Maximum Ratings

Symbol Parameter Conditions Rating Units

VPN DC Link Input Voltage,

Drain-source Voltage of each FRFET 250 V

ID25 Each FRFET Drain Current, Continuous TC = 25°C 4 A

ID100 Each FRFET Drain Current, Continuous TC = 100°C 2.5 A

IDP Each FRFET Drain Current, Peak TC = 25°C, PW < 100μs 8 A

PDMaximum Power Dissipation TC = 25°C, Each FRFET 14 W

VCC Control Supply Voltage Applied between VCC and COM 20 V

VBS High-side Bias Voltage Applied between VB(U)-U, VB(V)-V, VB(W)-W 20 V

VIN Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V

TJOperating Junction Temperature -40 ~ 150 °C

TSTG Storage Temperat ure -50 ~ 150 °C

RθJC Junction to Case Therma l Resistance Each FRFET under inverter operating con-

dition (Note 1) 8.8 °C/W

VISO Isolation Voltage 60Hz, Sinusoidal, 1 minute, Connection pins

to heatsink 1500 Vrms

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FSB50825TB Rev. A

FSB50825TB Smart Power Module (SPM®) - (BSH only)

Pin Descriptions

Note:

Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM®. External connections should be made as indicated in Fig-

ure 2 and 5. Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)

Pin Number Pin Name Pin Description

1COM IC Common Supply Ground

2 VB(U) Bias Voltage for U Phase High Side FRFET Driving

3 VCC(U) Bias Voltage for U Phase IC and Low Side FRFET Driving

4IN(UH) Signal Input for U Phase High-side

5IN(UL) Signal Inp ut for U Phase Low-side

6NC No Connection

7 VB(V) Bias Voltage for V Phase High Side FRFET Driving

8 VCC(V) Bias Voltage for V Phase IC and Low Side FRFET Driving

9IN(VH) Signal Inp ut for V Phase High-side

10 IN(VL) Signal Input for V Phase Low-side

11 NC No Connection

12 VB(W) Bias Voltage for W Phase High Side FRFET Driving

13 VCC(W) Bias Voltage for W Phase IC and Low Side FRFET Driving

14 IN(WH) Signal Input for W Phase High-side

15 IN(WL) Signal Input for W Phase Low-side

16 NC No Connection

17 PPositive DC–Link Input

18 U, VS(U) Output for U Phase & Bias Voltage Ground for High Side FRFET Driving

19 NUNegative DC–Link Input for U Phase

20 NVNegative DC–Link Input for V Phase

21 V, VS(V) Output for V Phase & Bias Voltage Ground for High Side FRFET Driving

22 NWNegative DC–Link Input for W Phase

23 W, VS(W) Output for W Phase & Bias Voltage Ground for High Side FRFET Driving

COM

VCC

LIN

HIN

COM

VCC

LIN

HIN

COM

VCC

LIN

HIN

(1) COM

(2) VB(U)

(3) VCC(U)

(4) IN(UH)

(5) IN(UL)

(6) NC

(7) VB(V)

(8) VCC(V)

(9) IN(VH)

(10) IN(VL)

(11) NC

(12) VB(W)

(13) VCC(W)

(14) IN(WH)

(15) IN(WL)

(16) NC

(17) P

(18) U, VS(U)

(19) NU

(20) NV

(21) V, VS(V)

(22) NW

(23) W, VS(W)

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FSB50825TB Rev. A

FSB50825TB Smart Power Module (SPM®) - (BSH only)

Electrical Characteristics (TJ = 25°C, VCC=VBS=12V Unless Otherwise Specified)

Inverter Part (Each FRFET Unless Otherwise Specified)

Control Part (Each HVIC Unless Otherwise Specified)

Note:

1. For the measurement point of case temperatur e TC, please refer to Figure 3 in page 4.

2. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM®. VPN should be sufficiently less than this value considering the

effect of the stray inductance so that VDS should not exceed BVDSS in any case.

3. tON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the

field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.

4. The peak c ur rent and voltage of each FRFET duri ng the sw i tchin g operation should be included i n t he safe operating area (SOA). Please see Figure 5 for th e RB SOA test cir-

cuit that is same as the switching test circuit.

Package Marking & Ordering Information

Symbol Parameter Conditions Min Typ Max Units

BVDSS Drain-Source Breakdown

Voltage VIN= 0V, ID = 250μA (Note 2) 250 - - V

ΔBVDSS/

ΔTJ

Breakdown Voltage Tem-

perature Coefficient ID = 250μA, Referenced to 25°C -0.31 - V

IDSS Zero Gate Voltage

Drain Current VIN= 0V, VDS = 250V - - 250 μA

RDS(on) Static Drain-Source

On-Resistance VCC = VBS = 12V, VIN = 5V, ID = 2.0A - - 0.45 Ω

VSD Drain-Source Diode

Forward Voltage VCC = VBS = 12V, VIN = 0V, ID = -2.0A - - 1.2 V

tON

Switching Times

VPN = 150V, VCC = VBS = 12V, ID = 2.0A

VIN = 0V ↔ 5V

Inductive load L=3mH

High- and low-side FRFET switching

(Note 3)

-1050 -ns

tOFF -450 -ns

trr -140 -ns

EON -100 -μJ

EOFF - 5 - μJ

RBSOA Reverse-bias Safe Oper-

ating Area

VPN = 200V, VCC = VBS = 12V, ID = IDP, VDS=BVDSS,

TJ = 150°C

High- and low-side FRFET switching (Note 4) Full Square

Symbol Parameter Conditions Min Typ Max Units

IQCC Quiescent VCC Current VCC=12V, VIN=0V Applied between VCC and COM - - 160 μA

IQBS Quiescent VBS Current VBS=12V, VIN=0V Applied between VB(U)-U,

VB(V)-V, VB(W)-W - - 100 μA

UVCCD Low-side Undervoltage

Protection (Figure 6) VCC Undervoltage Protection Detection Level 7.4 8.0 9.4 V

UVCCR VCC Undervoltage Protection Reset Level 8.0 8.9 9.8 V

UVBSD High-side Undervoltage

Protection (Figure 7) VBS Undervoltage Protection Detection Level 7.4 8.0 9.4 V

UVBSR VBS Undervoltage Protection Reset Level 8.0 8.9 9.8 V

VIH ON Threshold Voltage Logic High Level Applied between IN and COM 3.0 - - V

VIL OFF Threshold Voltage Logic Low Level - - 0.8 V

IIH Input Bias Current VIN = 5V Applied between IN and COM -10 20 μA

IIL VIN = 0V - - 2 μA

Device Marking Device Package Reel Size Tape Width Quantity

FSB50825TB FSB50825TB SPM23-CD _ _ 15

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FSB50825TB Rev. A

FSB50825TB Smart Power Module (SPM®) - (BSH only)

Recommended Operating Conditions

Note:

(1) It is recommended the bootstrap diode D1 to have soft and fast recovery characteristics with 400-V rating

(2) Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.

(3) RC coupling (R5 and C5) at each input (indicated as dotted lines) may be used to prevent improper input signal due to surge noise. Signal input of SPM® is compatible with

standard CMOS or LSTTL outptus.

(4) Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C1, C2

and C3 should have good high-frequency characteristics to absorb high-frequency ripple current.

Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters

Note:

Attach the thermocouple on top of the heatsink-side of SPM® (between SPM® and heatsink if applied) to get the correct temperature measurement.

Figure 3. Case Temperature Measurement

Symbol Parameter Conditions Value Units

Min. Typ. Max.

VPN Supply Voltage Applied between P and N -150 200 V

VCC Control Supply Voltage Applied between VCC and COM 12 13.5 15 V

VBS High-side Bias Voltage Applied between VB and output(U, V, W) 11.5 13.5 15 V

VIN(ON) Input ON Threshold Voltage Applied between IN and COM 3.0 - VCC V

VIN(OFF) Input OFF Threshold Voltage 0 - 0.6 V

tdead Blanking Time for Preventing

Arm-short VCC=VBS=12 ~ 15V, TJ ≤ 150°C 1.0 - - μs

fPWM PWM Switching Frequency TJ ≤ 150°C -15 -kHz

TCCase Temperature TJ ≤ 150°C -20 -100 °C

COM

VCC

LIN

HIN

NR3

Inverter

Output

R1D1

Micom

15-V Line

10μFOne-Leg Diagram of SPM

These values depend on PWM

control algorithm

* Exampl e of bootstrap paramte r s:

C1 = C 2 = 1μF ceramic capacitor,

R1 = 56 Ω,

HIN LIN

VDC

0 0

0 1

1 0

1 1

Open Open

Output

VDC

Forbidden

Note

Both FR FE T Off

Low-side FRFET On

High-side FRFET On

Shoot-through

Same as (0 , 0)

Case Temperature(Tc)

Detecting Point

14.50mm

3.80mm

MOSFET Case Temperature(Tc)

Detecting Point

14.50mm

3.80mm

MOSFET

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FSB50825TB Rev. A

FSB50825TB Smart Power Module (SPM®) - (BSH only)

Figure 4. Switching Time Definition

Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side)

Figure 6. Undervoltage Prot ection (Low-side)

Figure 7. Undervoltage Protection (High-side)

tON trr

Irr

100% of ID120% of ID

(a) Turn -on

tOFF

(b) Tu rn -o ff

VDS

VIN VIN

10% of ID

COM

VCC

LIN

HIN

One-leg Diagram of SPM

VCC RBS

CBS

VDS

UVCCD

UVCCR

Input Signal

UV Protection

Status

Low-side Supply, VCC

MOSFET Current

RESET DETECTION RESET

UVBSD

UVBSR

Input Signal

UV Protection

Status

High-si de Supply, VBS

MOSFET Current

RESET DETECTION RESET

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FSB50825TB Rev. A

FSB50825TB Smart Power Module (SPM®) - (BSH only)

Figure 8. Example of Applicat ion Circuit

COM

VCC

LIN

HIN

COM

VCC

LIN

HIN

COM

VCC

LIN

HIN

(1) COM

(2) VB(U)

(3) VCC(U)

(4) IN(UH)

(5) IN(UL)

(6) NC

(7) VB(V)

(8) VCC(V)

(9) IN(VH)

(10) IN(VL)

(11) NC

(12) VB(W)

(13) VCC(W)

(14) IN(WH)

(15) IN(WL)

(16) NC

(17) P

(18) U, VS(U)

(19) NU

(20) NV

(21) V, VS(V)

(22) NW

(23) W, V S(W)

Micom

15-V

Supply

C3VDC

For 3-phase current sensing and protection

7www.fairchildsemi.com

FSB50825TB Rev. A

FSB50825TB Smart Power Module (SPM®) - (BSH only)

Detailed Package Outline Drawings

6.05±0.20

(0.20)

#1 #16

#17 #23

(0.20)

0.50±0.05 #19, 20 LEAD

Max 1.00

(0.20)

#19

(0.20)

(30°)

23Leads

NOTES: UNLESS OTHERWISE SPECIFIED

A) THIS PACKAGE DOES NOT COMPLY

TO ANY CURRENT PACKAGING STANDARD.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) " " DIMENSION TOLERANCE

: CUSTOMER REQUIRED THE DELETION

OF TOLERANCE(±0.20)

0.50±0.05

Max 1.00

12.00±0.20

29.00±0.20

(1.165) 15*1.778=26.67±0.20

#17,18,21,22,23-0.60±0.05

Max 1.00

(1.80)

(1.30)

(2.275) 4x3.90=15.60±0.20

#1 #16

#17 #23

2x3.90=7.80±0.20

12.23 13.13

13.34 13.34

7.00 12.00

14.00±0.20

19.00±0.20

0.50±0.05

R0.40

(1.00)

(1.80)

3.10±0.20

1.95±0.20

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FSB50825TB Rev. A

FSB50825TB Smart Power Module (SPM®) - (BSH only)

Rev. I15

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be

an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF

THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE

UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF

FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE

PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to result

in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx®

Across the board. Around the world.™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

CTL™

Current Transfer Logic™

DOME™

E2CMOS™

EcoSPARK®

EnSigna™

FACT Quiet Series™

FACT®

FAST®

FASTr™

FPS™

FRFET®

GlobalOptoisolator™

GTO™

HiSeC™

i-Lo™

ImpliedDisconnect™

IntelliMAX™

ISOPLANAR™

MICROCOUPLER™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR®

PACMAN™

POP™

Power220®

Power247®

PowerEdge™

PowerSaver™

PowerTrench®

Programmable Active Droop™

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

ScalarPump™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

The Power Franchise®

™

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyWire™

TruTranslation™

µSerDes™

UHC®

UniFET™

VCX™

Wire™

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub-

lished at a later date. Fairchild Semiconductor reserves the rig ht to make

changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-

ued by Fairchild semiconductor. The datasheet is printed for reference infor-

mation only.