COMSET SEMICONDUCT ORS 2/3
BDY55 – BDY56
EL ECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
BDY55 60 - -
VCEO(SUS) Collector-Emitter
Break do wn Voltag e (*) IC=200 mA, IB=0 BDY56 120 - - V
VCE=30 V BDY55 --0.7
ICEO Collector-Emitter Cutoff
Current VCE=60 V BDY56 --0.5
mA
BDY55 --5.0
IEBO Emitter-Base Cutoff Current VEB=7 V BDY56 --3.0
mA
VCE=100 V
VBE=-1.5 V --5.0
VCE=100 V
VBE=-1.5 V
TCASE=150°C
BDY55 --30
VCE=150 V
VBE=-1.5 V --3.0
ICEX
Collector-Emitter Cutoff
Current
VCE=150 V
VBE=-1.5 V
TCASE=150°C
BDY56 --30
mA
IC=4.0 A, IB=0.4 A BDY55
BDY56 --1.1
VCE(SAT) Collector-Emitter saturation
Voltage (*) IC=10 A, IB=3.3 A BDY55
BDY56 --2.5
V
VBE Base-Emitter Voltage (*) IC=4.0 A, VCE=4.0 V BDY55
BDY56 --1.8V
VCE=4 V, IC=4 A BDY55
BDY56 20 - 70
h21E Static Forward Current
transfer ratio (*) VCE=4 V, IC=10 A BDY55
BDY56 10 V
fTTransition Frequency VCE=4.0 V, IC=1.0 A, f=10
MHz BDY55
BDY56 10 - - MHz