VS-30TPS..PbF Series, VS-30TPS..-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A FEATURES 2 (A) * Designed and qualified JEDEC(R)-JESD47 according to * 125 C max. operating junction temperature * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 3 2 1 1 (K) (G) 3 TO-247AC Available APPLICATIONS * Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding and battery charge PRODUCT SUMMARY Package TO-247AC Diode variation Single SCR IT(AV) 20 A VDRM/VRRM 800 V, 1200 V VTM 1.3 V DESCRIPTION IGT 45 mA TJ -40 C to 125 C The VS-30TPS... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES UNITS 20 A IRMS 30 VRRM/VDRM 800/1200 V 300 A 1.3 V dV/dt 500 V/s dI/dt 150 A/s - 40 to 125 C VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 C mA VS-30TPS08PbF, VS-30TPS08-M3 800 900 VS-30TPS12PbF, VS-30TPS12-M3 1200 1300 ITSM VT 20 A, TJ = 25 C TJ VOLTAGE RATINGS PART NUMBER 10 Revision: 06-Feb-14 Document Number: 94386 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS..PbF Series, VS-30TPS..-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle non-repetitive surge current ITSM TEST CONDITIONS TC = 95 C, 180 conduction half sine wave 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 310 10 ms sine pulse, no voltage reapplied 442 4420 I2t Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied Maximum on-state voltage drop VTM 20 A, TJ = 25 C Threshold voltage Maximum reverse and direct leakage current Maximum holding current Maximum latching current rt VT(TO) IRM/IDM TJ = 125 C TJ = 25 C VR = Rated VRRM/VDRM TJ = 125 C UNITS 20 30 Maximum I2t for fusing On-state slope resistance VALUES A A2s A2s 1.3 V 12 m 1.0 V 0.5 10 mA IH Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 C IL Anode supply = 6 V, resistive load, TJ = 25 C 200 TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open 500 V/s 150 A/s VALUES UNITS Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt 150 TRIGGERING PARAMETER SYMBOL TEST CONDITIONS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 C 60 Anode supply = 6 V, resistive load, TJ = 25 C 45 Anode supply = 6 V, resistive load, TJ = 125 C 20 Anode supply = 6 V, resistive load, TJ = - 10 C 2.5 Anode supply = 6 V, resistive load, TJ = 25 C 2.0 Anode supply = 6 V, resistive load, TJ = 125 C 1.0 TJ = 125 C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq TEST CONDITIONS TJ = 25 C TJ = 125 C 0.9 4 s 110 Revision: 06-Feb-14 Document Number: 94386 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS..PbF Series, VS-30TPS..-M3 Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Maximum thermal resistance, case to heatsink RthCS TEST CONDITIONS C 0.8 Mounting surface, smooth and greased 0.2 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) 30TPS08 Case style TO-247AC (JEDEC) 130 30TPS.. Series R thJC (DC) = 0.8 C/ W 120 Conduction Angle 110 30 60 90 100 120 180 90 5 C/W 40 10 15 20 25 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) -40 to 125 6 Marking device 0 UNITS DC operation Approximate weight Mounting torque VALUES 30TPS12 130 30TPS.. Series RthJC (DC) = 0.8 C/ W 120 110 Conduction Period 100 30 90 60 90 120 180 DC 80 0 5 10 15 20 25 30 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics 35 Revision: 06-Feb-14 Document Number: 94386 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS..PbF Series, VS-30TPS..-M3 Series Vishay Semiconductors 60 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) www.vishay.com 180 120 90 60 30 50 40 RMS Limit 30 20 Conduction Angle 30TPS.. Series TJ= 125C 10 0 0 5 10 15 20 25 280 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s 240 @50 Hz 0.0100 s 260 220 200 180 160 140 120 30 1 80 DC 180 120 90 60 30 40 RMS Limit Conduction Period 20 30TPS.. Series TJ = 125C 0 10 20 30 40 100 Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 0 10 Numb er Of Equa l Amplitude Ha lf Cyc le Current Pulses (N) Average On-state Current (A) 60 30TPS.. Series 50 300 Maximum Non Repetitive Surge Current Versus Pulse Tra in Duration. Control Of Conduc tion May Not Be Ma intained. Initial TJ= 125C No Voltage Reapplied Rated VRRMReapplied 280 260 240 220 200 180 160 140 30TPS.. Series 120 0.01 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 TJ= 25C TJ= 125C 100 10 30TPS.. Series 1 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Revision: 06-Feb-14 Document Number: 94386 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS..PbF Series, VS-30TPS..-M3 Series Transient Thermal Impedance Z thJC (C/ W) www.vishay.com Vishay Semiconductors 1 Steady State Value (DC Operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 0.1 D = 0.08 Single Pulse 30TPS.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Rec tangular gate p ulse a )Rec ommend ed loa d line for rated di/ dt: 10 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommend ed load line for <= 30% rated di/ dt: 10 V, 65 ohms 10 tr = 1 s, tp >= 6 s (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a ) (b ) VGD IGD 0.1 0.001 TJ = -10 C TJ = 125 C 1 TJ = 25 C Instantaneous Gate Voltage (V) 100 (4) 0.1 (2) (1) Frequency Limited by PG(AV) 30TPS.. Series 0.01 (3) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Revision: 06-Feb-14 Document Number: 94386 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS..PbF Series, VS-30TPS..-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 T P S 12 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: 4 - T = Thyristor Package: P = TO-247 5 - Type of silicon: S = Standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - Environmental digit: 08 = 800 V 12 = 1200 V PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30TPS08PbF 25 500 Antistatic plastic tubes VS-30TPS08-M3 25 500 Antistatic plastic tubes VS-30TPS12PbF 25 500 Antistatic plastic tubes VS-30TPS12-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95542 TO-247AC PbF www.vishay.com/doc?95226 TO-247AC -M3 www.vishay.com/doc?95007 Revision: 06-Feb-14 Document Number: 94386 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC DIMENSIONS in millimeters and inches A A (3) (6) P E B (2) R/2 A2 S (Datum B) O K M DBM P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Plating (4) E1 Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e OK L L1 OP O P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) O P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC(R) outline TO-247 with exception of dimension c Revision: 20-Apr-17 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC - 50 mils L/F DIMENSIONS in millimeters and inches A A (3) (6) P E B (2) R/2 A2 S (Datum B) O K M DBM P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Plating (4) E1 Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e OK L L1 OP O P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) O P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC(R) outline TO-247 with exception of dimension c and Q Revision: 20-Apr-17 Document Number: 95542 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000