Micro-X1
Semiconductor Group 1 Draft A03 1998-04-01
HiRel
NPN Silicon RF Transistor BFY 193
Features
¥
HiRel
Discrete and Microwave Semiconductor
¥ For low noise, high gain broadband amplifiers up to
2 GHz.
¥ For linear broadband amplifiers
¥ Hermetically sealed microwave package
¥
f
T
= 8 GHz,
F
= 2.3 dB at 2 GHz
¥ qualified
¥ ESA/SCC Detail Spec. No.: 5611/006
ESD: E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1610
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1701
(see
Chapter Order Instructions
for ordering example)
1)
The maximum permissible base current for
V
FBE
measurements is 30 mA (spot measurement duration < 1 s).
2)
T
S
is measured on the collector lead at the soldering point to the pcb.
Type Marking Ordering Code Pin Configuration Package
BFY 193 (ql)
-
see below C E B E Micro-X1
Table 1 Maximum Ratings
Parameter Symbol Limit Values Unit
Collector-emitter voltage
V
CEO
12 V
Collector-emitter voltage,
V
BE
= 0
V
CES
20 V
Collector-base voltage
V
CBO
20 V
Emitter-base voltage
V
EBO
2V
Collector current
I
C
80 mA
Base current
I
B
10
1)
mA
Total power dissipation,
T
S
£
104
°
C
2)
P
tot
580 mW
Junction temperature
T
j
200
°
C
Operating temperature range
T
op
-
65 É
+
200
°
C
Storage temperature range
T
stg
-
65 É
+
200
°
C
Thermal Resistance
Junction soldering point
2)
R
th JS
< 165 K/W
BFY 193
Semiconductor Group 2 Draft A03 1998-04-01
Electrical Characteristics
3)
This test assures
V
(BR)CE0
> 12 V.
Table 2 DC Characteristics
at
T
A
= 25
°
C unless otherwise specified
Parameter Symbol Limit Values Unit
min. typ. max.
Collector-base cutoff current
V
CB
= 20 V,
I
E
= 0
I
CBO
--
100
m
A
Collector-emitter cutoff current
V
CE
= 12 V,
I
B
= 0.5
m
A
3)
I
CEX
--
600
m
A
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
I
CBO
--
50 nA
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
I
EBO
--
25
m
A
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
I
EBO
--
0.5
m
A
Base-emitter forward voltage
I
E
= 30 mA, IC = 0
VFBE --1V
DC current gain
IC = 30 mA, VCE = 8 V
hFE 50 100 175 -
BFY 193
Semiconductor Group 3 Draft A03 1998-04-01
4)
Table 3 AC Characteristics at TA = 25 °C unless otherwise specified
Parameter Symbol Limit Values Unit
min. typ. max.
Transition frequency
IC = 40 mA, VCE = 5 V, f = 500 MHz
IC = 50 mA, VCE = 8 V, f = 500 MHz
fT
6.5
-
7.5
8
-
-
GHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
CCB -0.56 0.75 pF
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
CCE -0.34 -pF
Emitter-base capacitance
VEB = 0.5 V, VCB = vcb = 0, f = 1 MHz
CEB -1.9 2.4 pF
Noise figure
IC = 15 mA, VCE = 5 V, f = 2 GHz,
ZS = ZSopt
F-2.3 2.9 dB
Power gain
IC = 40 mA, VCE = 5 V, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
Gma 4) 12.5 13.5 -dB
Transducer gain
IC = 40 mA, VCE = 5 V, f = 2 GHz,
ZS = ZL = 50 W
½S21e½289-dB
Output power
IC = 50 mA, VCE = 5 V, f = 2 GHz,
PIN = 10 dBm, ZS = ZL = 50 W
Pout 16.5 17.5 -dBm
Gma S21
S12
-----------kk
21ÐÐ()Gms
,S21
S12
-----------
==
BFY 193
Semiconductor Group 4 Draft A03 1998-04-01
Order Instructions
Full type variant including quality level must be specified by the orderer. For HiRel
Discrete and Microwave Semiconductors the ordering code specifies device family and
quality level.
Ordering Form:
Ordering Code: QÉ
BFY193 (x) (ql)
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702F1701
BFY193 ES
For BFY193 in ESA Space Quality Level
Further Information
See our WWW-Pages:
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
ÐHiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@hl.siemens.de
BFY 193
Semiconductor Group 5 Draft A03 1998-04-01
Figure 1 Micro-X1 Package
X Y
1.78
1.02
±0.1
0.1
ø1.65
±0.1
0.76
±0.25
1.05
GXM05552
1
2
3
4
-0.03
+0.05
-0.2
4.2
0.5
±0.1
