InGaAs linear image sensors
Near infrared image sensors (0.9 to 1.67 μm /
2.55 μm)
www.hamamatsu.com
G9211 to G9214 series
G9205 to G9208 series
1
The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifi cally designed for near infrared multichannel
spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifi er array, an offset com-
pensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifi er array is made up of CMOS
transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration
mode to achieve high sensitivity and stable operation in the near infrared spectral range. The package is hermetically sealed for
high reliability.
Signal processing circuits on the CMOS chip can be selected from two conversion effi ciencies (CE) by external voltage. The image
sensor operates over a wide dynamic range when CE=16 nV/e- and delivers high gain when CE=320 nV/e-.
Simple operation (by built-in timing generator) *2
High resolution: 25 μm pitch (512 ch)
Low cross-talk
256 ch: 1 video line
512 ch: 2 video lines
Low noise and low dark current
Two selectable conversion effi ciencies
Anti-saturation circuit
CDS circuit *1
Features Applications
Related products
Near infrared multichannel spectrophotometry
InGaAs multichannel detector head C8061-01, C8062-01
Radiation thermometry
Multichannel detector head controller C7557-01
Non-destructive inspection
Offset compensation circuit
Wide dynamic range
*1: A major source of noise in charge amplifi ers is the reset noise generated when the integration capacitance is reset. A CDS (correlated
double sampling) circuit greatly reduces this reset noise by holding the signal immediately after reset to fi nd the noise differential.
*2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external PLDs
(programmable logic device) are used to input the required timing signals. However, the G9211 to G9214/G9205 to G9208 series image
sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the
timings.
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
2
Selection guide
Shape specifi cations
Type no. Cooling Active area size
(mm) Number of total pixels
Number of active pixels
Applicable multichannel
detector head
G9211-256S
One-stage
TE-cooled
12.8 × 0.25 256 256
C8061-01
G9212-512S 512 512
G9213-256S 12.8 × 0.50 256 256
G9214-512S 512 512
G9205-256W
Two-stage
TE-cooled 12.8 × 0.25 256 256 C8062-01
G9206-256W
G9207-256W
G9208-256W
Type no. Pixel size
[μm (H) × μm (V)]
Pixel size
(μm) Package Window material
G9211-256S 50 × 250 50
28-pin metal
(refer to the dimensionl
outline)
Sapphire glass with anti-
refl ective coating
G9212-512S 25 × 250 25
G9213-256S 50 × 500 50
G9214-512S 25 × 500 25
G9205-256W
50 × 250 50
G9206-256W
G9207-256W
G9208-256W
KMIRC0040EA
KMIRC0033EA
Details of active area (unit: μm) Block diagram
H
x
V
256
Number of pixels
30
x
512
50
10 25
H
250
500
250
500
V
Timing generator
CLK
Thermoelectric cooler + Thermoelectric cooler -
Temperature monitor
VIDEO
AD-TRIG
RESET Vdd Vss INP Vref
Bias generator
Shift register
Address switch
Charge amp + sample-and-hold circuit
InGaAs photodiode array
Readout circuit
CMOS IC
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
3
Absolute maximum ratings
Recommended terminal voltage
Parameter Symbol Condition Min. Typ. Max. Unit
Operating temperature*3
Topr Chip temperature -40 - +70 °C
Storage temperature*
3
Tstg Chip temperature -40 - +85 °C
Supply voltage Vdd, INP, Vref Ta=25 °C -0.3 - +6 V
Clock pulse voltage VφTa=25 °C -0.3 - +6 V
Reset pulse voltage V(RES) Ta=25 °C -0.3 - +6 V
Gain selection terminal voltage Vcsel Ta=25 °C -0.3 - +6 V
*3: Non condensation
Note:
Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is ex-
ceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum rat-
ings.
Parameter Symbol Min. Typ. Max. Unit
Supply voltage Vdd 4.9 5.0 5.1 V
Vref - 1.26 - V
Element bias INP 3.5 4.5 4.6 V
Ground Vss - 0 - V
Clock pulse voltage High VφVdd - 0.5 Vdd Vdd + 0.5 V
Low 0 0 0.4
Reset pulse voltage High V(RES) Vdd - 0.5 Vdd Vdd + 0.5 V
Low 0 0 0.4
Electrical characteristics (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Consumption current
I(Vdd)
256 pixels
-4550
mA
512 pixels
- 90 100
I(Vref) - - 1 mA
I(INP) - - 1 mA
Clock frequency f 0.1 - 4 MHz
Video data rate fV 0.0125 f/8 0.5 MHz
Video output voltage High V
H
- 4.5 INP V
Low V
L
Vref 1.26 - V
Output offset voltage Vos - Vref - V
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
4
Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=4.5 V, Vref=1.26 V, Vf=5 V, CE=16 nV/e-, f=250 kHz)
Parameter Symbol G9211 to G9214 series*4G9205 to G9208 series*5
Unit
Min. Typ. Max. Type No. Min. Typ. Max.
Spectral response range λ0.9 - 1.7
G9205 0.9 - 1.85
μm
G9206 0.9 - 2.05
G9207 0.9 - 2.25
G9208 0.9 - 2.55
Peak sensitivity wavelength λp- 1.55 -
G9205 - 1.75 -
μm
G9206 - 1.95 -
G9207 - 2.05 -
G9208 - 2.3 -
Photo sensitivity (λ=λp) S 0.85 0.95 -
G9205 0.9 1.1 -
A/W
G9206 1.0 1.2 -
G9207 1.0 1.2 -
G9208 0.9 1.3 -
Conversion effi ciency CE - 16 - - 16 - nV/e-
Photo response non-uniformity*6PRNU - ±3 ±5 - ±5 ±10 %
Saturation voltage Vsat - 3 - - 3 - V
Saturation charge Qsat - 187.5 -- 187.5 -Me-
Readout noise*7N - 180 300 - 180 300 μV rms
Dynamic range D - 16666 -- 16666 - -
Defective pixels*8---1 --5%
*4: T=25 °C
*5: T=-20 °C
*6: 50% of saturation, after dark output subtraction, excluding fi rst and last pixels
G9211 to G9214 series: integration time=10 ms, G9205 to G9208 series: integration time=3 ms
*7: G9211 to G9214 series: integration time=10 ms, G9205 to G9208 series: integration time=0.8 ms
*8: Pixels with photo response non-uniformity, readout noise or dark current higher than the maximum value
Dark output characteristics (CE=16 nV/e-, G9211 to G9214 series: T=25 °C, G9205 to G9208 series: T=-20 °C)
Parameter Symbol Min. Typ. Max. Unit
Dark output
(dark output non-uniformity)
G9211-256S
VD
-1 0.2 1
V/s
G9212-512S -0.5 0.1 0.5
G9213-256S -2 0.4 2
G9214-512S -0.5 0.1 0.5
G9205-256W -6 1.5 6
G9206-256W -12 3 12
G9207-256W -80 20 80
G9208-256W -200 50 200
Dark current
G9211-256S
ID
-10 2 10
pA
G9212-512S -5 1 5
G9213-256S -20 4 20
G9214-512S -5 1 5
G9205-256W -60 15 60
G9206-256W -120 30 120
G9207-256W -800 200 800
G9208-256W -2000 500 2000
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Equivalent circuit
KMIRC0010ED
CDS
1 pixel
INP
Shift register
Offset
compensation
circuit
VIDEO
AD-TRIG
Low gain
High gain
Timing generator
CLK
External input
RESET Vref
Vss
Vdd
Photodiode
5
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
6
Timing chart
Integration
time
n ch
(n-1) ch
2 ch
1 ch
8 × N clocks (Readout time)
TRIGGER
(output)
VIDEO
(output)
CLK
(input)
RESET
(input)
8 clocks
10 clocks min.
2 clocks
8 clocks
KMIRC0016EA
t1
tr(RES)
CLK
RESET
AD_TRIG
VIDEO
tf(RES)
Readout time for channel 1
Readout time for last channel
tr(clk) tf(clk)
Readout time
for channel 2
Actual integration time
t3
Blank period
(10 clocks or more)
t2
Integration time
Reset Output
KACCC0224JB
Parameter Symbol Min. Typ. Max. Unit
Clock pulse frequency - 0.1 - 4 MHz
Clock pulse width tpw(clk) 100 - - ns
Clock pulse rise/fall times tr(clk), tf(clk) 0 20 100 ns
Reset pulse width tpw(RES) 6000 - - ns
Reset pulse rise/fall times tr(RES), tf(RES) 0 20 100 ns
Reset (rise) timing t1 50 - - ns
Reset (fall) timing t2 50 - - ns
Output settling time t3 - - 600 ns
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
7
KMIRB0033EC
KMIRB0049EA
Spectral response
Spectral transmittance characteristic of window material (typical example)
0.5 1.0 1.5 2.0 2.5 3.0
0
0.5
1.0
1.5
Wavelength (µm)
Photo sensitivity (A/W)
(Typ.)
T=25
°
C
T=-10 °C
T=-20 °C
G9201 to
G9204 series
G9211 to
G9214 series
G9414 series
G9206-256W
G9207-256W
G9205-256W
G9208-256W
Wavelength (µm)
Transmittance (%)
0.5 1.0 1.5 2.0 2.5 3.0
70
75
80
85
90
95
100 (Ta=25 °C)
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Pin connection (top view)
TE +
THERM
THERM
CASE
RESET
TE -
Vdd
Vss
INP
CLK
Vref
VIDEO
Cf SELECT
AD-TRIG
256 PIXELS 512 PIXELS
TE +
THERM
THERM
CASE
RESET-ODD
TE -
Vdd
Vss
INP
CLK-ODD
Vref
VIDEO-ODD
Cf SELECT
AD-TRIG-ODD
RESET-EVEN
AD-TRIG-EVEN
CLK-EVEN
VIDEO-EVEN
Terminal name Input/Output Function and recommended connection
CLK Input (CMOS logic compatible) Clock pulse for operating the CMOS shift register
RESET Input (CMOS logic compatible) Reset pulse for initializing the feedback capacitance in the charge amplifi er formed
in the CMOS chip. The width of the reset pulse is integration time.
Vdd Input Supply voltage for operating the signal processing circuit in the CMOS chip
Vss Input Ground for the signal processing circuit in the CMOS chip
INP Input Reset voltage for the charge amplifi er array in the CMOS chip
Cf SELECT Input Voltage that determines the conversion effi ciency in the CMOS chip. Low gain
(CE=16 nV/e-) at 0 V, and high gain (CE=320 nV/e-) at 5 V.
CASE - This terminal is electrically connected to the package.
THERM Output Thermistor for monitoring temperature inside the package
TE+, TE- Input Power supply terminal for the thermoelectric cooler that cools the photodiode
array. No connection for room temperature operation type.
AD-TRIG Output Digital signal for AD conversion; positive polarity
VIDEO Output Analog video signal; positive polarity
Vref Input Reset voltage for the offset compensation circuit in the CMOS chip
KMIRC0013EA
Connection example
Buffer
Buffer
Vss
INP
Cf SELECT
Vdd
RESET
InGaAs linear image sensor
CLK
VIDEO
AD-TRIG
Vref
KMIRC0012EA
8
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Thermistor temperature characteristic
240 250 260
Temperature (K)
270 280 290
103
104
105
300
Thermistor resistance (Ω)
A relation between the thermistor
resistance and absolute temperature
is expressed by the following equation.
R1=R2 × exp B (1/T1 - 1/T2)
R1: Resistance at T1 [K]
R2: Resistance at T2 [K]
B : B constant (B=3200 K ± 2%)
5 kΩ ± 3% at 298 K
TE-cooler temperature characteristics
(Ta=25 °C, Vdd=5 V, INP=4.5 V)
G9211 to G9214 series G9205 to G9208 series
Specifi cations of TE-cooler (Ta=25 °C, Vdd=5 V, INP=4.5 V)
Parameter Condition Symbol One-stage TE-cooler Two-stage TE-cooler Unit
Min. Typ. Max. Min. Typ. Max.
TE-cooler allowable current Ic Max. - - 1.8 - - 2.8 A
TE-cooler allowable voltage Vc Max. - - 5.0 - - 4.0 V
Temperature difference*9*10 Δt40 - - 50 - - °C
Thermistor resistance Rth 4.85 5.00 5.15 4.85 5.00 5.15 kΩ
Thermistor power dissipation Pth - - 0.2 - - 0.2 mW
*9: This is a temperature difference between the surface of active area and the heat radiating portion of package.
*10: One-stage thermoelectrically cooled type: Ic=1.4 A, two-stage thermoelectrically cooled type: Ic=2.6 A.
9
Allowable current (A)
(Typ. heatsink 0.5 °C/W)
Allowable voltage (V)
Temperature difference (°C)
012
0
0.5
1.5
4.0
3.5
3.0
2.5
1.0
2.0
-10
0
20
70
60
50
40
10
30
Allowable voltage
Temperature difference
021
0
1
2
7
6
5
4
3
-10
0
10
20
60
50
40
30
3
(Typ. heatsink 0.4 °C/W)
Allowable voltage
Temperature difference
Allowable current (A)
Allowable voltage (V)
Temperature difference (°C)
KMIRB0032EBKMIRB0031EB
KMIRB0041EA
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
10
12 14
28
R 1.59
2.54 ± 0.15
15
10.2 ± 0.15
3.0 ± 0.15
25.4 ± 0.15
22.9 ± 0.15
63.5 ± 0.15
53.3 ± 0.15
38.1 ± 0.15
35.6 ± 0.15
20.3 ± 0.15
2.54 ± 0.15 0.45 ± 0.05
Index mark
Active area (left side 1ch)
Photosensitive surface
1.0 ± 0.2
A
C
B
6.4 ± 1
Center accuracy of active area:
±0.3 mm or less (with package center as reference point)
Rotation accuracy of active area:
±2° or less (with package center as reference point)
Chip material: InGaAs
Package material: FeNiCo alloy
Lead treatment: Ni/Au plating
Lead material: FeNiCo alloy
Window material: sapphire
Refractive index of window material: n=1.76
Window material thickness: 0.66 mm
AR coat: coated (1.55 µm peak)
Window sealing method: brazing
Cap sealing: welding
27.2 ± 0.15
G9211 to G9214 series
G9205 to G9208 series
6.15 ± 0.2 5.8 ± 0.2
AType no. B C
7.25 ± 0.2 6.85 ± 0.2
3.4 ± 0.3
4.3 ± 0.3
Dimensional outline (unit: mm)
KMIRA0011EB
Multichannel detector head C8061-01, C8062-01 (sold separately)
The C8061/C8062-01 series are high sensitivity multichannel detector heads for use with InGaAs linear image sensors. The C8061-01 is de-
signed for the one-stage TE-cooled InGaAs linear image sensors and the C8062-01 for two-stage TE-cooled InGaAs linear image sensors.
The C8061-01 and C8062-01 incorporate a low-noise driver/amplifi er circuit that provide reliable operation from simple external signals.
They also include a highly stable temperature controller that cools the sensor to a preset temperature level (C8061-01: Ts= -10 °C, C8062-
01: Ts= -20 °C) as soon as the power is turned on. If the cooler fails and overheat occurs, the built-in protection circuit automatically turns
off the power to maintain safety. Despite its compact size, the housing confi guration is designed for good heat dissipation, and threaded
mounting holes on the front panel allow connections to other devices such as monochromators.
Controller for multichannel detector head C7557-01 is also available. The software supplied with the C7557-01 allows easy control of the
multichannel detector head and data acquisition.
Features
Designed for InGaAs linear image sensor
C8061-01: One-stage TE-cooled type
C8062-01: Two-stage TE-cooled type
Built-in driver/amplifi er and temperature circuit
Simple signal input operation
Compact confi guration
Highly stable temperature controller
Cooling temperature (Ta=10 to 30 °C)
fi xed at -10 ± 0.1 °C (C8061-01), -20 ± 0.1 °C (C8062-01)
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Cat. No. KMIR1011E07 Jan. 2011 DN
www.hamamatsu.com
Information described in this material is current as of January, 2011. Product specifications are subject to change without prior notice due to improvements or other
reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix
"(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year
period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
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Connection
KACCC0402EA
AC cable (100 to 240 V;
included with the C7557-01
)
PC (Windows 2000/XP/Vista)
C7557-01
USB cable
(Included with
the C7557-01)
Image sensor
+
Multichannel
detector head
(USB 2.0)
Shutter *
timing pulse
Dedicated cable
(Included with the C7557-01)
* Shutter, etc. are not available.
TE CONTROL I/O
SIGNAL I/O
POWER
Trig.
11
