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Infrared light emitting diode, side-view type
SIM-22ST
The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens.
Applications Dimensions (Unit : mm)
Light source for sensors
Features
1) Compact package (4.7x4.6 mm) with lens.
2) High efficiency, high output.
3) Emission spectrum well suited to silicon detectors
(P = 950 nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
Absolute maximum ratings (Ta=25C)
Parameter Symbol
P
D
I
F
I
FP
∗
V
R
Topr
Tstg
Limits
−25 to +85
−30 to +100
50
5
80
0.5
Unit
mA
V
mW
A
°C
°C
∗ Pulse width = 0.1ms, duty ratio 1%
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Electrical and optical characteristics (Ta=25C)
Parameter Symbol
VF
IR
λP
Δλ
θ1/2
tr tf
Min.
−
0.48
−
−
−
−
−
−
Typ.
0.8
1.3
1.3
−
950
40
±30
1.0
Max.
−
1.94
1.6
10
−
−
−
−
Unit
mW/sr IF=10mA
IF=10mA∗
IF=50mA
VR=5V
IF=10mA
IF=20mA
IF=50mA
IF=50mA
mA
V
μA
nm
nm
deg
μs
fc −1.0 −IF=50mA
MHz
Conditions
Emitting strength
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
IE
IE
∗ According to our measurement procedures.
4.1
4.6
±
0.1
(2.54)
0.64
1.0
1.9
2.54
±
0.1
1.8
±
0.05
2.8
4.7
±
0.1
1.0 1.5
12Min.
R0.75 R0.5
R0.5
2−0.45 0.40
2−0.65
2-C0.7
1Cathode 2Anode
1 2
Gate remainder
0.3Max.
0.15
Notes:
1. Tolerances are
±
0.2 unless
otherwise indicated.
2. Value in parenthese is size
at base of leads.
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c 2010 ROHM Co., Ltd. All rights reserved. 2010.06 - Rev.B
Data Sheet SIM-22ST
Electrical and optical characteristic curves
FORWARD CURRENT : I
F (mA)
AMBIENT TEMPERATURE : Ta(
°C)
−20 0 40 60 8020 10
0
0
20
10
30
40
50
Fig.1 Forward current falloff
FORWARD CURRENT : IF (
mA)
FORWARD VOLTAGE : VF (
V)
0
10
20
30
40
50
60
70
0.40 0.8 1.2 1.6
Fig.2 Forward current vs. forward voltag
e
75
°C
50
°C
25
°C
0
°C
−25
°C
EMITTING STRENGTH I : IE (mW / Sr)
FORWARD CURRENT : IF(mA)
100 2030405
0
0
14
2
4
6
8
10
12
Fig.3 Emitting strength vs.
forward current
−25 10
0
7550250
10
20
50
100
200
RELATIVE EMITTING STRENGTH : IE (%
)
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Relative emitting strength vs
.
ambient temperature
RELATIVE OPTICAL OUTPUT : PO
(%)
OPTICAL WAVELENGTH : λ (
nm)
920900 940 960 980 100
0
0
20
40
60
80
100
Fig.5 Wavelength
Fig. 6 Directional pattern
RELATIVE EMITTING STRENGTH (%)
100 80 60 40 20 0 0
20
40
60
80
100
RELATIVE EMITTING STRENGTH (%) ANGULAR DISPLACEMENT : θ
(deg)
10°
0°
20°30°40°50°60°70°80°90°
10°
20°
30°
40°
50°
60°
70°
80°
9
0°
R1010
A
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