Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. 1.0 2.54 0.1 Dimensions (Unit : mm) Applications Light source for sensors 1.9 Features 1) Compact package (4.7x4.6 mm) with lens. 2) High efficiency, high output. 3) Emission spectrum well suited to silicon detectors (P = 950 nm). 4) Good current-optical output linearity. 5) Long life, high reliability. Notes: 1. Tolerances are 0.2 unless otherwise indicated. 2. Value in parenthese is size at base of leads. Gate remainder 0.3Max. 4.1 0.15 R0.5 1.5 4.7 0.1 R0.75 2.8 1.0 2-0.65 2-0.45 1 R0.5 12Min. 2-C0.7 1.8 0.05 4.6 0.1 0.40 2 0.64 (2.54) 1 Cathode 2 Anode Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Forward current IF 50 mA Reverse voltage VR 5 V Power dissipation PD 80 mW Pulse forward current IFP 0.5 A Operating temperature Topr -25 to +85 C Storage temperature Tstg -30 to +100 C Pulse width = 0.1ms, duty ratio 1% Electrical and optical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Emitting strength IE - 0.8 - mW/sr IF=10mA Emitting strength IE 0.48 1.3 1.94 mA IF=10mA Forward voltage VF - 1.3 1.6 V IF=50mA Reverse current IR - - 10 A VR=5V Peak light emitting wavelength P - 950 - nm IF=10mA Spectral line half width - 40 - nm IF=20mA Half-viewing angle 1/2 - 30 - deg IF=50mA Parameter Response time Cut-off frequency tr fc tf Conditions - 1.0 - s IF=50mA - 1.0 - MHz IF=50mA According to our measurement procedures. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 1/2 2010.06 - Rev.B SIM-22ST Data Sheet Electrical and optical characteristic curves 14 40 30 20 10 0 -20 0 20 40 60 80 50 -25C 0C 25C 50C 75C 40 30 20 10 0 0 100 AMBIENT TEMPERATURE : Ta(C) 0.4 1.2 12 10 8 6 4 2 0 0 1.6 10 20 30 40 50 FORWARD CURRENT : IF(mA) Fig.2 Forward current vs. forward voltage Fig.3 Emitting strength vs. forward current RELATIVE OPTICAL OUTPUT : PO (%) 100 200 100 50 20 10 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (C) 80 60 40 20 0 900 920 Fig.4 Relative emitting strength vs. ambient temperature 20 10 0 80 50 60 60 40 70 20 80 40 20 RELATIVE EMITTING STRENGTH (%) 0 980 1000 100 40 60 960 Fig.5 Wavelength 30 80 940 OPTICAL WAVELENGTH : (nm) 0 10 20 30 40 50 60 70 80 90 RELATIVE EMITTING STRENGTH (%) -25 90 100 0.8 FORWARD VOLTAGE : VF (V) Fig.1 Forward current falloff RELATIVE EMITTING STRENGTH : IE (%) 60 EMITTING STRENGTH I : IE (mW / Sr) 50 FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) 70 ANGULAR DISPLACEMENT : (deg) Fig. 6 Directional pattern www.rohm.com c 2010 ROHM Co., Ltd. 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