ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
9/6/97 DB92067-AAS/A1
A.C. INPUT PHOTOTRANSISTOR
OPTICALL Y COUPLED
ISOLATORS
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
lVDE 0884 approval pending
lEN60950 approval pending
DESCRIPTION
The IS733H optically coupled isolator consists
of two infrared light emitting diodes connected
in inverse parallel and NPN silicon photo
transistor in a standard 6 pin dual in line plastic
package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kV RMS ,7.5kVPK )
lAC or polarity insensitive input
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lTelephone sets, Telephone exchangers
lSignal transmission between systems of
different potentials and impedances
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current ±150mA
Peak forward current ±1A
Power Dissipation 230mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 35V
Collector-base Voltage BVCBO 35V
Emitter-collector Voltage BVECO 6V
Emitter-base Voltage BVEBO 6V
Power Dissipation 160mW
POWER DISSIPATION
Total Power Dissipation 320mW
(derate linearly 4.27mW/°C above 25°C)
IS733H
DB92067-AAS/A2
PARAMETER MI N TY P MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = ±20mA
Output Collector-emitter Breakdown (BVCEO)35 V I
C
= 1mA
( note 2 )
Collector-base Breakdown (BVCBO)35 V I
C
= 100µA
Emitter-base Breakdown (BVEBO)6 V I
E
= 100µA
Emitter-collector Breakdown (BVECO)6 V I
E
= 100µA
Collector-emitter Dark Current (ICEO) 100 nA VCE = 20V
Coupled Current Transfer Ratio (CTR) (note 2 ) 15 30 0 % ±1mAIF , 5V VCE
Collector-emitter Saturation VoltageVCE(SAT) 0.2 V ±20mAIF , 1mAIC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time t r 4 18 µsV
CE = 2V ,
Output Fall Time tf 3 18 µsI
C
= 2mA, R L = 100Ω
9/6/97
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB92067-AAS/A2
9/6/97
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
For ward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
TA = 25°C
0
1
2
3
4
5
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
IF = ±20mA
IC = 1mA
Forward current IF (±mA)
Collector-emitter Saturation
Voltage vs. Forward Current
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
Current Transfer Ratio vs. Forward Current
Forward current IF (±mA)
Current transfer ratio CTR (%)
1 2 5 10 20 50
0
80
120
160
200
240
0 2 4 6 8 10
0
10
20
30
40
50
40
TA = 25°C
280
320
Forward current IF (±mA)
Collector-emitter saturation voltage VCE(SAT) (V)
0 5 10 15
6
VCE = 5V
TA = 25°C
IF = ±5mA
2mA
Ic =1mA
8mA
5mA
3mA
±10
±15
±20
±30
±50