PD - 95489D IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF Features l l l l l l HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 75V RDS(on) = 4.5m G Description ID = 160A S This HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-220AB D2 Pak IRF2907ZPbF IRF2907ZSPbF TO-262 IRF2907ZLPbF Absolute Maximum Ratings Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 170 ID @ TC = 100C Continuous Drain Current, VGS @ 10V (See Fig. 9) ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wirebond Limited) Units 120 A 160 * c IDM Pulsed Drain Current PD @TC = 25C Maximum Power Dissipation 300 W Linear Derating Factor 2.0 20 W/C V 270 mJ VGS EAS 680 Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) EAS (tested) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range c i d h C 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw RCS A -55 to + 175 10 lbf*in (1.1N*m) Thermal Resistance Junction-to-Case k See Fig.12a,12b,15,16 mJ Soldering Temperature, for 10 seconds RJC 690 Typ. Parameter --- Max. 0.50l Case-to-Sink, Flat, Greased Surface 0.50 RJA Junction-to-Ambient --- 62 RJA Junction-to-Ambient (PCB Mount, steady state) --- 40 j --- Units C/W HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 07/22/10 IRF2907Z/S/LPbF Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS VDSS/TJ RDS(on) VGS(th) Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance 75 --- --- 2.0 180 --- --- --- --- --- --- --- --- --- --- --- --- --- 0.069 3.5 --- --- --- --- --- --- 180 46 65 19 140 97 100 5.0 --- --- 4.5 4.0 --- 20 250 200 -200 270 --- --- --- --- --- --- --- LS Internal Source Inductance --- 13 --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 7500 970 510 3640 650 1020 --- --- --- --- --- --- gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current f f f 6mm (0.25in.) from package pF Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units c --- 160* --- --- 680 --- --- --- --- 41 59 1.3 61 89 G S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 60V, = 1.0MHz VGS = 0V, VDS = 0V to 60V Conditions MOSFET symbol A V ns nC D showing the integral reverse G p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 38V di/dt = 100A/s f S f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L=0.095mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt 340A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 2 --- Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A V VDS = VGS, ID = 250A S VDS = 25V, ID = 75A A VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V ID = 75A nC VDS = 60V VGS = 10V ns VDD = 38V ID = 75A RG = 2.5 VGS = 10V D nH Between lead, This value determined from sample failure population. 100% tested to this value in production. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ of approximately 90C. TO-220 device will have an Rth of 0.45C/W. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A.Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140 http://www.irf.com/ technical-info/appnotes/an-1140.pdf) www.irf.com IRF2907Z/S/LPbF 1000 10000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 100 4.5V 10 4.5V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 1 0.1 1 10 10 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 1000 200 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current () 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) T J = 175C 100 10 T J = 25C 1 VDS = 25V 60s PULSE WIDTH 0.1 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com T J = 25C 150 T J = 175C 100 50 V DS = 10V 380s PULSE WIDTH 0 10 0 25 50 75 100 125 150 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current 3 IRF2907Z/S/LPbF 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 90A C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss Coss Crss 1000 100 VDS= 60V VDS= 38V 10.0 VDS= 15V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 150 200 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 10000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 100 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage T J = 175C 100 TJ = 25C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 1msec 100 Limited by package 10 10msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V DC 0.1 1 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 50 2.5 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF2907Z/S/LPbF 180 2.5 160 RDS(on) , Drain-to-Source On Resistance (Normalized) Limited By Package ID, Drain Current (A) 140 120 100 80 60 40 20 0 ID = 90A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 -60 -40 -20 0 175 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) T C , Case Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 C 1 2 2 Ri (C/W) i (sec) 0.279 0.000457 0.221 0.003019 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF2907Z/S/LPbF EAS , Single Pulse Avalanche Energy (mJ) 1200 15V ID TOP 9.0A 13A BOTTOM 75A 1000 DRIVER L VDS D.U.T RG VGS 20V + V - DD IAS tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS 800 600 400 200 tp 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 4.0 Charge Fig 13a. Basic Gate Charge Waveform L DUT 0 1K Fig 13b. Gate Charge Test Circuit 6 VCC VGS(th) Gate threshold Voltage (V) VG 3.5 3.0 2.5 ID = 250A 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) Fig 14. Threshold Voltage vs. Temperature www.irf.com IRF2907Z/S/LPbF 100 Avalanche Current (A) 0.01 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.05 0.10 10 1 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF2907Z/S/LPbF D.U.T Driver Gate Drive + - P.W. + D.U.T. ISD Waveform Reverse Recovery Current + V DD * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF2907Z/S/LPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN T HE AS S EMBLY LINE "C" Note: "P" in assembly line pos ition indicates "Lead - Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C TO-220AB packages are not recommended for Surface Mount Application. Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF2907Z/S/LPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DATE CODE P = DES IGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMBLY S ITE CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRF2907Z/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" INTERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE P = DES IGNATES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS SEMBLY SITE CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 IRF2907Z/S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2010 12 www.irf.com