1C5D25170H Rev. 0, 12-2018
C5D25170H
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
1.7kV Schottky Rectier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Positive Temperature Coecient on VF
Benets
Replace Bipolar with Unipolar Rectiers
Essentially No Switching Losses
Higher Eciency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
1500V Solar Inverter
Package
TO-247-2
Maximum Ratings (TC=25°C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 1700 V
VRDC Peak Reverse Voltage 1700 V
IFContinuous Forward Current
70
33.6
25.6
A
TC=25˚C
TC=135˚C
TC=150˚C
Fig. 3
IFRM Repetitive Peak Forward Surge Current 99
57 ATC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFSM Non-Repetitive Forward Surge Current 117
88 ATC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
Ptot Power Dissipation 384
167 WTC=25˚C
TC=110˚C Fig. 4
T
J
, T
stg
Operating Junction and Storage Temperature -55 to
+175 ˚C
TO-247 Mounting Torque 1
8.8
Nm
lbf-in
M3 Screw
6-32 Screw
Part Number Package Marking
C5D25170H TO-247-2 C5D25170
PIN 1
PIN 2 CASE
VRRM = 1700 V
IF, (TC=135˚C) = 33.6 A
Qc  =255nC
2C5D25170H Rev. 0, 12-2018
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.5
2.5
1.8
3.0 VIF = 25 A TJ=25°C
IF = 25 A TJ=175°C Fig. 1
IRReverse Current 20
120
200
300 μA VR = 1700 V TJ=25°C
VR = 1700 V TJ=175°C Fig. 2
QCTotal Capacitive Charge 255 nC
VR = 1700 V, IF = 25A
di/dt = 200 A/μs
TJ = 25°C
Fig. 5
C Total Capacitance
1950
190
140
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
VR = 1700 V, TJ = 25˚C,f = 1 MHz
Fig. 6
ECCapacitance Stored Energy 175 μJ VR = 1700 V Fig. 7
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
RθJC Thermal Resistance from Junction to Case 0.39 °C/W Fig. 8
Typical Performance
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
IF (A)
VF (V) VR (V)
IR (mA)
IF (A)
VF (V)
IR (μA)
VR (V)
0
5
10
15
20
25
30
35
40
45
50
0.0 1.0 2.0 3.0 4.0
Foward Current, I
F
(A)
Foward Voltage, V
F
(V)
TJ= -55 °C
TJ= 25 °C
TJ= 75 °C
TJ= 175 °C
TJ= 125 °C
IF (A)
VF (V)
0
100
200
300
400
500
600
700
800
900
1,000
0400 800 1200 1600 2000 2400
Reverse Leakage Current, I
RR
(uA)
Reverse Voltage, VR(V)
TJ= 175 °C
TJ= 125 °C
TJ= 75 °C
TJ= -55 °C
TJ= 25 °C
IR (μA)
VR (V)
3C5D25170H Rev. 0, 12-2018
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
Typical Performance
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
Qc (nC)
VR (V)
TC ˚C
PTot (W)
TC ˚C
Qc (nC)
VR (V)VR (V)
Qc (nC)
C (pF)
VR (V)
TC ˚C
0
50
100
150
200
250
25 50 75 100 125 150 175
T
C
C)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
IF(peak) (A)
TC ˚C
0
50
100
150
200
250
300
350
400
450
25 50 75 100 125 150 175
PTOT (W)
TC(°C)
PTot (W)
TC ˚C
0
50
100
150
200
250
300
0300 600 900 1200 1500 1800
Capacitive Charge, Q
C
(nC)
Reverse Voltage, V
R
(V)
Conditions:
T
J= 25 °C
Qc (nC)
VR (V)
0
400
800
1200
1600
2000
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, V
R
(V)
Conditions:
T
J
= 25 °C
F
test
= 100 kHz
V
test
= 25 mV
C (pF)
VR (V)
4C5D25170H Rev. 0, 12-2018
Typical Performance
Figure 7. Typical Capacitance Stored Energy
Figure 8. Transient Thermal Impedance
Thermal Resistance (˚C/W)
T (Sec)
EC(mJ)
VR (V)
Thermal Resistance (˚C/W)
T (Sec)
0
20
40
60
80
100
120
140
160
180
200
0500 1000 1500 2000
Capacitance Stored Energy, EC(mJ)
Reverse Voltage, VR(V)
EC(mJ)
VR (V)
100E-6
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C5D25170H Rev. 0, 12-2018
Package Dimensions
Package TO-247-2
NOTE ;
1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
TITLE:
SHEET
COMPANY ASE Weihai
1 OF 3
ASE Advanced
Semiconductor
Engineering Weihai, Inc.
PACKAGE
OUTLINE ISSUE
DATE
DWG NO. 98W0002TO011
O
Jan.09, 2018
TO-247 2LD
Recommended Solder Pad Layout
POS Inches Millimeters
Min Max Min Max
A 0.190 0.205 4.70 5.31
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
b 0.039 0.055 0.99 1.40
b1 0.065 0.095 1.65 2.41
c 0.015 0.035 0.38 0.89
D 0.819 0.845 20.80 21.46
D1 0.640 0.683 16.25 17.35
D2 0.112 0.124 2.86 3.16
E 0.620 0.640 15.49 16.26
E1 0.516 0.557 13.10 14.15
E2 0.135 0.201 3.43 5.10
E3 0.039 0.075 1.00 1.90
E4 0.487 0.529 12.38 13.43
e 0.428 BSC 10.88 BSC
L 0.78 0.80 19.81 20.32
L1 - 0.177 - 4.50
ØP 0.138 0.144 3.51 3.66
Q 0.212 0.244 5.38 6.20
S 0.238 0.248 6.04 6.3
T 17.5° REF.
W 3.5° REF.
X 4° REF.
Y 0 0.5 0 0.02
TO-247-2
.4
all units are in inches
PIN 1
PIN 2
CASE
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
Part Number Package Marking
C5D25170H TO-247-2 C5D25170
66 C5D25170H Rev. 0, 12-2018
Copyright © 2018 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/power/tools-and-support/product-ecology.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac debrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air trac control systems.
Notes
Related Links
Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Diode Model
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT = VT+If*RT
VT = 0.94 + (TJ * -1.0*10-3)
RT =0.027+(TJ *2.8*10-4)
Note: TJ = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C