MAC4DCM, MAC4DCN Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. http://onsemi.com Features * * * * * * * * * Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Blocking Voltage to 800 V On-State Current Rating of 4.0 A RMS at 108C High Immunity to dv/dt - 500 V/s at 125C High Immunity to di/dt - 6.0 A/ms at 125C Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available TRIACS 4.0 AMPERES RMS 600 - 800 VOLTS MT2 MARKING DIAGRAMS MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MAC4DCM MAC4DCN VDRM, VRRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108C) IT(RMS) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width 10 sec, TC = 108C) Average Gate Power (t = 8.3 msec, TC = 108C) 4 Value Unit V 4.0 YWW AC 4DCxG DPAK-3 CASE 369D STYLE 6 A 1 40 A I2t 6.6 A2sec PGM 2.0 W PG(AV) 1.0 W IGM Peak Gate Voltage (Pulse Width 20 sec, TC = 108C) VGM 5.0 V Operating Junction Temperature Range TJ -40 to 125 C Storage Temperature Range Tstg -40 to 150 C 4.0 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. January, 2009 - Rev. 7 3 DPAK CASE 369C STYLE 6 4 Peak Gate Current (Pulse Width 20 sec, TC = 108C) (c) Semiconductor Components Industries, LLC, 2009 1 2 600 800 ITSM MT1 G 1 2 YWW AC 4DCxG 3 Y WW AC4DCx G = Year = Work Week = Device Code x= M or N = Pb-Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MAC4DCM/D MAC4DCM, MAC4DCN THERMAL CHARACTERISTICS Characteristic Thermal Resistance, - Junction-to-Case - Junction-to-Ambient - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes (Note 3) Symbol Max Unit RJC RJA RJA 3.5 88 80 C/W TL 260 C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max - - - - 0.01 2.0 - 1.3 1.6 8.0 8.0 8.0 12 18 22 35 35 35 0.5 0.5 0.5 0.8 0.8 0.8 1.3 1.3 1.3 Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) IDRM, IRRM TJ = 25C TJ = 125C mA ON CHARACTERISTICS Peak On-State Voltage (Note 4) (ITM = 6.0 A) VTM V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VGT Gate Non-Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+); MT2(+), G(-); MT2(-), G(-) TJ = 125C VGD 0.2 0.4 - V Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) IH 6.0 22 35 mA Latching Current (VD = 12 V, IG = 35 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IL - - - 30 50 20 60 80 60 mA V mA DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/sec, Gate Open, TJ = 125C, f = 250 Hz, CL = 5.0 F, LL = 20 mH, No Snubber) (See Figure 16) di/dt(c) 6.0 8.4 - A/ms Critical Rate of Rise of Off-State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) dv/dt 500 1700 - V/s 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 from case for 10 seconds. 4. Pulse Test: Pulse Width 2.0 msec, Duty Cycle 2%. ORDERING INFORMATION Package Type Package Shipping MAC4DCM-001 DPAK-3 369D 75 Units / Rail MAC4DCM-1G DPAK-3 (Pb-Free) 369D 75 Units / Rail Device MAC4DCMT4 DPAK 369C 2500 / Tape & Reel MAC4DCMT4G DPAK (Pb-Free) 369C 2500 / Tape & Reel MAC4DCN-001 DPAK-3 369D 75 Units / Rail MAC4DCN-1G DPAK-3 (Pb-Free) 369D 75 Units / Rail DPAK 369C 2500 / Tape & Reel DPAK (Pb-Free) 369C 2500 / Tape & Reel MAC4DCNT4 MAC4DCNT4G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MAC4DCM, MAC4DCN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off-State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off-State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On-State Voltage IH Holding Current VTM on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 - IH off state VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (-) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT - + IGT (-) MT2 Quadrant III (-) MT2 Quadrant IV (+) IGT GATE (-) IGT GATE MT1 MT1 REF REF - MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM P(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 = 30 120 60 90 115 110 120 = CONDUCTION ANGLE 180 dc 105 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 120 90 4.0 = CONDUCTION ANGLE 3.0 2.0 60 = 30 1.0 0 1.0 3.0 2.0 4.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation MAXIMUM @ TJ = 125C 10 MAXIMUM @ TJ = 25C 1.0 0.1 1.0 2.0 3.0 1.0 0.1 ZJC(t) = RJC(t)Sr(t) 0.01 5.0 4.0 0.1 10 1.0 100 1000 10 k VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response 1.2 VGT, GATE TRIGGER VOLTAGE(VOLTS) 60 I GT, GATE TRIGGER CURRENT (mA) IT(RMS), RMS ON-STATE CURRENT (AMPS) TYPICAL @ TJ = 25C 50 40 30 Q3 Q2 20 Q1 10 0 -50 dc 180 5.0 0 100 0 6.0 4.0 r(t) , TRANSIENT RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON-STATE CURRENT (AMPS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) MAC4DCM, MAC4DCN 1.0 0.8 Q1 Q2 Q3 0.6 0.4 0.2 0 -25 0 25 50 75 100 -50 125 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature http://onsemi.com 4 125 60 120 50 100 IL, LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) MAC4DCM, MAC4DCN MT2 POSITIVE 40 30 20 MT2 NEGATIVE 10 Q2 80 60 Q1 40 Q3 20 0 0 -50 -25 0 25 50 75 125 100 -50 -25 0 25 50 75 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 15 K 10 K TJ = 125C TJ = 125C VPK = 400 V 6.0 K STATIC dv/dt (V/ s) STATIC dv/dt (V/ s) 8.0 K VPK = 400 V 600 V 4.0 K 125 100 800 V 10 K 600 V 800 V 5.0 K 2.0 K 0 0 100 1000 10 K 100 10 K RG-MT1, GATE-MT1 RESISTANCE (OHMS) RG-MT1, GATE-MT1 RESISTANCE (OHMS) Figure 9. Exponential Static dv/dt versus Gate-MT1 Resistance, MT2(+) Figure 10. Exponential Static dv/dt versus Gate-MT1 Resistance, MT2(-) 14 K 10 K 12 K TJ = 100C GATE OPEN GATE OPEN STATIC dv/dt (V/ s) 8.0 K STATIC dv/dt (V/ s) 1000 6.0 K 110C 4.0 K 125C 2.0 K TJ = 100C 10 K 8.0 K 110C 6.0 K 125C 4.0 K 2.0 K 0 0 400 500 600 700 800 400 500 600 700 VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS) Figure 11. Exponential Static dv/dt versus Peak Voltage, MT2(+) Figure 12. Exponential Static dv/dt versus Peak Voltage, MT2(-) http://onsemi.com 5 800 MAC4DCM, MAC4DCN 10 K 14 K GATE OPEN 12 K GATE OPEN VPK = 400 V STATIC dv/dt (V/ s) VPK = 400 V 6.0 K 600 V 4.0 K 800 V 10 K 8.0 K 600 V 6.0 K 800 V 4.0 K 2.0 K 2.0 K 0 0 100 105 110 115 125 120 100 105 110 115 120 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 13. Typical Exponential Static dv/dt versus Junction Temperature, MT2(+) Figure 14. Typical Exponential Static dv/dt versus Junction Temperature, MT2(-) 100 VPK = 400 V dv/dt(c), CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s) TJ = 125C 75C 100C 10 f= tw 1 2 tw (di/dt)c = VDRM 6f ITM 1000 1.0 0 5.0 10 20 15 25 30 35 di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 15. Critical Rate of Rise of Commutating Voltage LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC CHARGE 1N4007 MEASURE I TRIGGER CHARGE CONTROL NONPOLAR CL TRIGGER CONTROL STATIC dv/dt (V/ s) 8.0 K + 200 V MT2 1N914 51 MT1 G Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 6 125 MAC4DCM, MAC4DCN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O -T- C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- MAC4DCM, MAC4DCN PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 -T- SEATING PLANE K J F D G H DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- 3 PL 0.13 (0.005) M STYLE 6: PIN 1. 2. 3. 4. T MT1 MT2 GATE MT2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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