© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 7
1Publication Order Number:
MAC4DCM/D
MAC4DCM, MAC4DCN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
•Small Size Surface Mount DPAK Package
•Passivated Die for Reliability and Uniformity
•Blocking Voltage to 800 V
•On−State Current Rating of 4.0 A RMS at 108°C
•High Immunity to dv/dt − 500 V/s at 125°C
•High Immunity to di/dt − 6.0 A/ms at 125°C
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
•Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage
(Note 1) (TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC4DCM
MAC4DCN
VDRM,
VRRM
600
800
V
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz,
TC = 108°C)
IT(RMS) 4.0 A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125°C)
ITSM 40 A
Circuit Fusing Consideration
(t = 8.3 msec)
I2t 6.6 A2sec
Peak Gate Power
(Pulse Width ≤ 10 sec, TC = 108°C)
PGM 2.0 W
Average Gate Power
(t = 8.3 msec, TC = 108°C)
PG(AV) 1.0 W
Peak Gate Current
(Pulse Width ≤ 20 sec, TC = 108°C)
IGM 4.0 A
Peak Gate Voltage
(Pulse Width ≤ 20 sec, TC = 108°C)
VGM 5.0 V
Operating Junction Temperature Range TJ−40 to 125 °C
Storage Temperature Range Tstg −40 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
TRIACS
4.0 AMPERES RMS
600 − 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4Main Terminal 2
MT1
G
MT2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
DPAK−3
CASE 369D
STYLE 6
DPAK
CASE 369C
STYLE 6
MARKING
DIAGRAMS
Y = Year
WW = Work Week
AC4DCx = Device Code
x= M or N
G=Pb−Free Package
12
3
4
YWW
AC
4DCxG
1
23
4
YWW
AC
4DCxG
MAC4DCM, MAC4DCN
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, − Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
RJC
RJA
RJA
3.5
88
80
°C/W
Maximum Lead Temperature for Soldering Purposes (Note 3) TL260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = 125°C
IDRM,
IRRM −
−
−
−
0.01
2.0
mA
ON CHARACTERISTICS
Peak On−State Voltage (Note 4) (ITM = ±6.0 A) VTM −1.3 1.6 V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
8.0
8.0
8.0
12
18
22
35
35
35
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
0.5
0.5
0.5
0.8
0.8
0.8
1.3
1.3
1.3
V
Gate Non−Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)T
J = 125°C
VGD 0.2 0.4 −V
Holding Current (VD = 12 V, Gate Open, Initiating Current = ±200 mA) IH6.0 22 35 mA
Latching Current (VD = 12 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
−
−
−
30
50
20
60
80
60
mA
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/sec,
Gate Open, TJ = 125°C, f = 250 Hz, CL = 5.0 F, LL = 20 mH, No Snubber)
(See Figure 16)
di/dt(c) 6.0 8.4 −A/ms
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt 500 1700 −V/s
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
ORDERING INFORMATION
Device Package Type Package Shipping†
MAC4DCM−001 DPAK−3 369D 75 Units / Rail
MAC4DCM−1G DPAK−3
(Pb−Free)
369D 75 Units / Rail
MAC4DCMT4 DPAK 369C 2500 / Tape & Reel
MAC4DCMT4G DPAK
(Pb−Free)
369C 2500 / Tape & Reel
MAC4DCN−001 DPAK−3 369D 75 Units / Rail
MAC4DCN−1G DPAK−3
(Pb−Free)
369D 75 Units / Rail
MAC4DCNT4 DPAK 369C 2500 / Tape & Reel
MAC4DCNT4G DPAK
(Pb−Free)
369C 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MAC4DCM, MAC4DCN
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3
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off−State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off−State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 −VTM
IH
VTM Maximum On−State Voltage
IHHolding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(−) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(−) MT2
REF
MT1
(−) IGT
GATE
(−) MT2
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT −+ IGT
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
MAC4DCM, MAC4DCN
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4
Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation
Figure 3. On−State Characteristics Figure 4. Transient Thermal Response
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.5 4.00
IT(RMS), RMS ON-STATE CURRENT (AMPS)
125
120
115
IT(RMS), RMS ON-STATE CURRENT (AMPS)
3.0 4.00
4.0
2.0
1.0
0
5.00
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
10
1.0
0.1
t, TIME (ms)
1.00.1
1.0
0.1
0.01
4.0
-25 25-50
TJ, JUNCTION TEMPERATURE (°C)
60
30
20
0
TJ, JUNCTION TEMPERATURE (°C)
-25 100-50
1.2
0.8
0.6
0.2
250
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
P
I
r(t), TRANSIENT RESISTANCE (NORMALIZED)
110
105
0.5 1.0 1.5 2.0 3.0 3.5 1.0 2.0
3.0
5.0
6.0
1.0 2.0 3.0 10 100 1000 10 k
, GATE TRIGGER CURRENT (mA)IGT
50 12575
40
0 12550 75
0.4
VGT, GATE TRIGGER VOLTAGE(VOLTS)
°
, AVERAGE POWER DISSIPATION (WATTS)
(AV)
, INSTANTANEOUS ON-STATE CURRENT (AMPS)
T
100
50
dc
180°
120°
90°
60°
= 30°
dc
180°
120°
90°
60°
TYPICAL @ TJ = 25°C
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 125°C
ZJC(t) = RJC(t)Sr(t)
Q3
Q2
Q1
Q3
Q2 Q1
α
α
= CONDUCTION ANGLE
α
α
= CONDUCTION ANGLE
= 30°
10
0
1.0
MAC4DCM, MAC4DCN
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5
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
Figure 9. Exponential Static dv/dt versus
Gate−MT1 Resistance, MT2(+)
Figure 10. Exponential Static dv/dt versus
Gate−MT1 Resistance, MT2(−)
Figure 11. Exponential Static dv/dt versus
Peak Voltage, MT2(+)
Figure 12. Exponential Static dv/dt versus
Peak Voltage, MT2(−)
75 125-50
TJ, JUNCTION TEMPERATURE (°C)
60
20
TJ, JUNCTION TEMPERATURE (°C)
25 12
5
-50
40
20
0
1000 10 K100
RG-MT1, GATE-MT1 RESISTANCE (OHMS)
10 K
8.0 K
6.0 K
4.0 K
2.0 K
0
RG-MT1, GATE-MT1 RESISTANCE (OHMS)
100
15 K
10 K
5.0 K
0
500 600400
VPK, PEAK VOLTAGE (VOLTS)
10 K
6.0 K
4.0 K
2.0 K
0
VPK, PEAK VOLTAGE (VOLTS)
400
14 K
12 K
6.0 K
2.0 K
0
600
IH, HOLDING CURRENT (mA)
I
STATIC dv/dt (V/ s)
STATIC dv/dt (V/ s)
10
0
-25 0 25 50 100 -25 0
80
100
120
1000 10 K
700 800 500 800700
, LATCHING CURRENT (mA)
L
40
30
50
10050 75
STATIC dv/dt (V/ s)
STATIC dv/dt (V/ s)
MT2 POSITIVE
MT2 NEGATIVE
Q2
Q3
Q1
TJ = 125°C
VPK = 400 V
600 V
800 V
TJ = 125°C
VPK = 400 V
600 V
800 V
GATE OPEN
TJ = 100°C
125°C
110°C
GATE OPEN
TJ = 100°C
125°C
110°C
60
8.0 K
10 K
8.0 K
4.0 K
MAC4DCM, MAC4DCN
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6
Figure 13. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+)
Figure 14. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(−)
Figure 15. Critical Rate of Rise of
Commutating Voltage
125100
TJ, JUNCTION TEMPERATURE (°C)
4.0 K
TJ, JUNCTION TEMPERATURE (°C)
12
5
100
10 K
2.0 K
0
5.0 350
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
100
10
1.0
COMMUTATING VOLTAGE (V/ s)
2.0 K
0
105 110 115 120 105 110
12 K
14 K
10 K
8.0 K
115 120
STATIC dv/dt (V/ s)
STATIC dv/dt (V/ s)
4.0 K
6.0 K
8.0 K
10 15
GATE OPEN
VPK = 400 V
800 V
600 V
GATE OPEN
VPK = 400 V
800 V
600 V
VPK = 400 V
100°C75°C
TJ = 125°C
tw
VDRM
(di/dt)c = 6f ITM
1000
f = 1
2 tw
dv/dt(c), CRITICAL RATE OF RISE OF
6.0 K
20 25 30
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
LL1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE TRIGGER
NON‐POLAR
CL
51
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
MAC4DCM, MAC4DCN
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7
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
−T−SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.180 0.215 4.57 5.45
S0.025 0.040 0.63 1.01
U0.020 −−− 0.51 −−−
V0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
MAC4DCM, MAC4DCN
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8
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
G
D3 PL
M
0.13 (0.005) T
C
E
J
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
MAC4DCM/D
LITERATURE FULFILLMENT:
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P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
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