2SK2649-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 800 9 36 35 9 141 100 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=3.19mH, Vcc=80V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=800V VGS=0V VGS=35V VDS=0V ID=4.5A VGS=10V Typ. Max. 800 3.5 Tch=25C Tch=125C ID=4.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=9A VGS=10V RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C 4.0 4.5 10 500 0.2 1.0 10 100 1.28 1.50 3.0 6.0 1200 1800 180 270 90 140 30 50 110 170 100 150 65 100 9 1.0 1.5 950 12 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.25 30.0 Units C/W C/W 1 2SK2649-01R FUJI POWER MOSFET Characteristics Safe operating area Power Dissipation PD=f(Tc) 120 ID=f(VDS):D=0.01,Tc=25C 10 2 100 10 t=0.01 s 1 10s 100s ID [A] PD [W] 1 s DC 80 60 10 0 1ms 40 10ms 10 100ms t -1 D= 20 t T T 0 0 50 100 10 150 -2 10 0 10 1 10 o Tc [ C] 2 10 3 VDS [V] Typical output characteristics Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 20 10 10 nd e mm 7V 10 6.5V 5 o c e r 1 n sig ew n for ID [A] ID [A] 10 10V 8V 15 . de VGS=20V 0 -1 6V 0 0 5 10 ot N 15 20 5.5V 5V 25 30 10 -2 0 35 1 2 3 4 5 6 7 8 9 10 VGS [V] VDS [V] Typical forward transconductance Typical drain-source on-state resistance gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 15 VGS= 5V 5.5V 6V 10 6.5V 7V 1 gfs [s] RDS(on) [ ] 10 10 0 5 8V 10V 10 20V 0 -1 10 -1 10 0 10 1 0 5 10 15 20 ID [A] ID [A] http://store.iiic.cc/ 2 2SK2649-01R FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V 6.0 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 5.0 4 max. VGS(th) [V] RDS(on) [ ] 4.0 max. 2 typ. typ. min. 3.0 2.0 1.0 0 -50 0 50 100 0.0 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical capacitances C=f(VDS):VGS=0V,f=1MHz Typical gate charge characteristic VGS=f(Qg):ID=9A,Tch=25C 10n 40 800 Vcc=640V 600 1n VDS [V] 20 mm 15 300 10 200 160V 100 0 0 20 40 60 ot N 80 100 o c e r 120 140 160 n sig ew n for VGS [V] 400V 400 C [F] 25 500 . de 0V 35 16 c= V c V 400 0V 30 64 700 Ciss Coss d en 100p Crss 5 0 180 10p 10 -2 Qg [nC] 10 -1 10 0 10 1 10 2 VDS [V] Forward characteristic of reverse of diode IF=f(VSD):80s Pulse test,VGS=0V 10 1 o IF [A] Tch=25 C typ. 10 10 10 0 -1 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD [V] http://store.iiic.cc/ 3 2SK2649-01R 1 FUJI POWER MOSFET Transient thermal impedande Zthch=f(t) parameter:D=t/T 10 0 Zthch-c [K/W] 10 D=0.5 0.2 0.1 -1 10 0.05 0.02 t D= 0.01 0 t T T -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4