ATF-55143
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Avago Technologies’ ATF-55143 is a high dynamic range,
very low noise, single supply E-PHEMT housed in a
4-lead SC-70 (SOT-343) surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF-55143 ideal for cellular/PCS hand-
sets, wireless data systems (WLL/RLL, WLAN and MMDS)
and other systems in the 450 MHz to 6 GHz frequency
range.
Surface Mount Package SOT-343
Features
High linearity performance
Single Supply Enhancement Mode Technology[1]
Very low noise gure
Excellent uniformity in product speci cations
400 micron gate width
Low cost surface mount small plastic package SOT-
343 (4 lead SC-70)
Tape-and-Reel packaging option available
Lead Free Option Available
Speci cations
2 GHz; 2.7V, 10 mA (Typ.)
24.2 dBm output 3rd order intercept
14.4 dBm output power at 1 dB gain compression
0.6 dB noise gure
17.7 dB associated gain
Lead-free option available
Applications
Low noise ampli er for cellular/PCS handsets
LNA for WLAN, WLL/RLL and MMDS applications
General purpose discrete E -PHEMT for other ultra low
noise applications
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Pin Connections and Package Marking
SOURCE
DRAIN
GATE
SOURCE
5Fx
Note:
Top View. Package marking provides orientation and identi cation
“5F” = Device Code
“x” = Date code character identi es month of manufacture.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
2
ATF-55143 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
V DS Drain-Source Voltage[2] V 5
V GS Gate-Source Voltage[2] V -5 to 1
V GD
Gate Drain Voltage[2] V -5 to 1
IDS
Drain Current[2] mA 100
IGS Gate Current[5] mA 1
Pdiss
Total Power Dissipation [3] mW 270
Pin max. RF Input Power[5]
(Vds=2.7V, Ids=10mA) dBm 10
(Vds=0V, Ids=0mA) dBm 10
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
jc Thermal Resistance [4] °C/W 235
ESD (Human Body Model) V 200
ESD (Machine Model) V 25
Notes:
1. Operation of this device above any one of these parameters may
cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 4.3 mW/°C for TL > 87°C.
4. Thermal resistance measured using 150°C Liquid Crystal Measure-
ment method.
5. Device can safely handle +10 dBm RF Input Power as long as I
GS
is
limited to 1 mA. I
GS
at P
1dB
drive level is bias circuit dependent. See
applications section for additional information.
Product Consistency Distribution Charts[6, 7]
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
IDS (mA)
0.4V
0.3V
0.5V
0.6V
0.7V
02146537
70
60
50
40
30
20
10
0
OIP3 (dBm)
Figure 2. OIP3 @ 2.7 V, 10 mA.
LSL = 22.0, Nominal = 24.2
22 23 2524 26
300
250
200
150
100
50
0
Cpk = 2.02
Stdev = 0.36
-3 Std
GAIN (dB)
Figure 3. Gain @ 2.7 V, 10 mA.
USL = 18.5, LSL = 15.5, Nominal = 17.7
15 1716 18 19
200
160
120
80
40
0
Cpk = 1.023
Stdev = 0.28
-3 Std +3 Std
NF (dB)
Figure 4. NF @ 2.7 V, 10 mA.
USL = 0.9, Nominal = 0.6
0.43 0.630.53 0.830.73 0.93
240
200
160
120
80
40
0
Cpk = 3.64
Stdev = 0.031
+3 Std
Notes:
6. Distribution data sample size is 500 samples taken from 6 di erent wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-o between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been de-embedded from actual measurements.
3
ATF-55143 Electrical Speci cations
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameter and Test Condition Units Min. Typ.[2] Max.
Vgs Operational Gate Voltage Vds = 2.7V, Ids = 10 mA V 0.3 0.47 0.65
Vth Threshold Voltage Vds = 2.7V, Ids = 2 mA V 0.18 0.37 0.53
Idss Saturated Drain Current Vds = 2.7V, Vgs = 0V μA — 0.1 3
Gm Transconductance Vds = 2.7V, gm = Idss/Vgs; mmho 110 220 285
Vgs = 0.75 – 0.7 = 0.05V
Igss Gate Leakage Current Vgd = Vgs = -2.7V μA — — 95
NF Noise Figure[1] f = 2 GHz Vds = 2.7V, Ids = 10 mA dB — 0.6 0.9
f = 900 MHz Vds = 2.7V, Ids = 10 mA dB — 0.3 —
Ga Associated Gain [1] f = 2 GHz Vds = 2.7V, Ids = 10 mA dB 15.5 17.7 18.5
f = 900 MHz Vds = 2.7V, Ids = 10 mA dB — 21.6 —
OIP3 Output 3rd Order f = 2 GHz Vds = 2.7V, Ids = 10 mA dBm 22.0 24.2 —
Intercept Point[1] f = 900 MHz Vds = 2.7V, Ids = 10 mA dBm — 22.3 —
P1dB 1dB Compressed f = 2 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.4 —
Output Power [1] f = 900 MHz Vds = 2.7V, Ids = 10 mA dBm — 14.2 —
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 6 wafers.
Input 50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.4
Γ_ang = 83°
(0.3 dB loss)
Output
Matching Circuit
Γ_mag = 0.5
Γ_ang = -26°
(1.2 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade-o between
an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
4
ATF-55143 Typical Performance Curves
Figure 6. Gain vs. Bias over Frequency.
[1]
FREQUENCY (GHz)
GAIN (dB)
0621453
30
25
20
15
10
5
2V, 10 mA
2.7V, 10 mA
Figure 8. OIP3 vs. Bias over Frequency.[1]
FREQUENCY (GHz)
OIP3 (dBm)
0621453
2V, 10 mA
2.7V, 10 mA
27
25
23
21
19
17
15
Figure 9. IIP3 vs. Bias over Frequency.[1]
FREQUENCY (GHz)
IIP3 (dBm)
0621453
2V, 10 mA
2.7V, 10 mA
15
10
5
0
-5
Figure 10. P1dB vs. Bias over Frequency.[1,2]
FREQUENCY (GHz)
P1dB (dBm)
0621453
2V, 10 mA
2.7V, 10 mA
16
14
12
10
8
Figure 11. Gain vs. I
ds
and V
ds
at 2 GHz.
[1]
2V
2.7V
3V
I
ds
(mA)
GAIN (dB)
03510520253015
21
20
19
18
17
16
15
Figure 13. OIP3 vs. I
ds
and V
ds
at 2 GHz.
[1]
Ids (mA)
OIP3 (dBm)
035
35
33
31
29
27
25
23
21
19
2V
2.7V
3V
10520253015
Figure 14. IIP3 vs. I
ds
and V
ds
at 2 GHz.
[1]
Ids (mA)
IIP3 (dBm)
035
16
14
12
10
8
6
4
2
0
2V
2.7V
3V
10520253015
Figure 7. Fmin vs. Frequency and Bias.
FREQUENCY (GHz)
Fmin (dB)
0621453
2V, 10 mA
2.7V, 10 mA
1.2
1.0
0.8
0.6
0.4
0.2
0
Figure 12. Fmin vs. I
ds
and V
ds
at 2 GHz.
I
ds (mA)
Fmin (dB)
035
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
2V
2.7V
3V
10520253015
Notes:
1. Measurements at 2 GHz were made on a xed tuned production test board that was tuned for optimal OIP3 match with reasonable noise gure
at 2.7 V, 10 mA bias. This circuit represents a trade-o between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq, the device is running close to class
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added e ciency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA
as a P1dB of +14.5 dBm is approached.
5
ATF-55143 Typical Performance Curves, continued
Figure 15. P1dB vs. I
dq
and V
ds
at 2 GHz.
[1,2]
Idq (mA)
P1dB (dBm)
035
2V
2.7V
3V
10520253015
17
16
15
14
13
12
11
10
Figure 16. Gain vs. I
ds
and V
ds
at 900 MHz.
[1]
Ids (mA)
GAIN (dB)
0402010515253530
2V
2.7V
3V
25
24
23
22
21
20
19
18
Figure 18. OIP3 vs. I
ds
and V
ds
at 900 MHz.
[1]
Ids (mA)
OIP3 (dBm)
035
32
30
28
26
24
22
20
18
16
2V
2.7V
3V
10520253015
Figure 19. IIP3 vs. I
ds
and V
ds
at 900 MHz.
[1]
Ids (mA)
IIP3 (dBm)
035
7
6
5
4
3
2
1
0
-1
-2
2V
2.7V
3V
10520253015
Figure 20. P1dB vs. I
dq
and V
ds
at
900 MHz.
[1,2]
Idq (mA)
P1dB (dBm)
035
17
16
15
14
13
12
11
10
9
2V
2.7V
3V
10520253015
Figure 17. Fmin vs. I
ds
and V
ds
at 900 MHz.
Ids (mA)
Fmin (dB)
035
2V
2.7V
3V
10520253015
0.35
0.30
0.25
0.20
0.15
0.10
Notes:
1. Measurements at 2 GHz were made on a xed tuned production test board that was tuned for optimal OIP3 match with reasonable noise gure
at 2.7 V, 10 mA bias. This circuit represents a trade-o between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq, the device is running close to class
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added e ciency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA
as a P1dB of +14.5 dBm is approached.
6
ATF-55143 Typical Performance Curves, continued
IIP3 (dBm)
Figure 21. Gain vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1]
FREQUENCY (GHz)
GAIN (dB)
0621453
28
23
18
13
8
25°C
-40°C
85°C
Figure 23. OIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1]
FREQUENCY (GHz)
OIP3 (dBm)
0621453
25°C
-40°C
85°C
25
24
23
22
21
20
19
Figure 24. IIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1]
FREQUENCY (GHz)
0621453
25°C
-40°C
85°C
16
14
12
10
8
6
4
2
0
-2
-4
-6
Figure 25. P1dB vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1,2]
FREQUENCY (GHz)
P1dB (dBm)
0621453
25°C
-40°C
85°C
16
15
14
13
12
11
10
Figure 22. Fmin vs. Frequency and
Temperature at 2.7V, 10 mA.
FREQUENCY (GHz)
Fmin (dB)
0621453
2.0
1.5
1.0
0.5
0
25°C
-40°C
85°C
Notes:
1. Measurements at 2 GHz were made on a xed tuned production test board that was tuned for optimal OIP3 match with reasonable noise gure
at 2.7 V, 10 mA bias. This circuit represents a trade-o between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq, the device is running close to class
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added e ciency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA
as a P1dB of +14.5 dBm is approached.
7
ATF-55143 Typical Scattering Parameters, VDS = 2V, IDS = 10 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.998 -6.5 20.78 10.941 174.9 0.006 86.1 0.796 -4.2 32.61
0.5 0.963 -31.7 20.37 10.434 154.8 0.029 70.2 0.762 -20.4 25.56
0.9 0.894 -54.7 19.57 9.516 137.1 0.048 56.9 0.711 -34.4 22.97
1.0 0.879 -60.1 19.32 9.252 133.0 0.051 54 0.693 -37.3 22.59
1.5 0.793 -84.1 18.07 8.009 115.2 0.066 41.5 0.622 -49.6 20.84
1.9 0.731 -100.8 17.11 7.166 102.8 0.075 33.6 0.570 -57.1 19.80
2.0 0.718 -104.7 16.86 6.970 100.1 0.077 31.8 0.559 -58.7 19.57
2.5 0.657 -123.7 15.79 6.159 86.6 0.084 23.7 0.503 -66.3 18.65
3.0 0.611 -141.8 14.80 5.494 74.2 0.090 16.5 0.446 -73 17.86
4.0 0.561 -177.5 13.10 4.517 51.0 0.098 3.6 0.343 -87.6 16.64
5.0 0.558 149.4 11.52 3.768 29.3 0.102 -8.3 0.269 -104.4 15.68
6.0 0.566 122.5 10.06 3.183 9.4 0.104 -18.4 0.224 -120.4 14.08
7.0 0.583 99.7 8.78 2.748 -9.2 0.106 -28.5 0.189 -137.3 11.96
8.0 0.601 77.7 7.62 2.404 -27.4 0.105 -38.4 0.140 -149.3 10.40
9.0 0.636 57.5 6.63 2.147 -45.3 0.110 -44.7 0.084 -170 9.51
10.0 0.708 38.3 5.66 1.919 -64.6 0.117 -56.6 0.08 109.3 9.34
11.0 0.76 21.8 4.45 1.670 -83.1 0.119 -68.2 0.151 64.5 8.77
12.0 0.794 7.6 3.32 1.465 -100.2 0.121 -79.3 0.217 40.8 8.14
13.0 0.819 -7.8 2.29 1.302 -117.9 0.121 -91.4 0.262 20.8 7.55
14.0 0.839 -23.6 1.27 1.157 -136.7 0.122 -104.4 0.327 0.5 6.92
15.0 0.862 -37.9 -0.19 0.978 -155.2 0.115 -117.7 0.431 -16.4 6.14
16.0 0.853 -51.0 -1.83 0.810 -171.8 0.109 -129.4 0.522 -28.6 4.53
17.0 0.868 -60.1 -3.25 0.688 173.9 0.107 -139.9 0.588 -41.6 3.91
18.0 0.911 -70.3 -4.44 0.601 158.5 0.102 -153.2 0.641 -55.8 4.79
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.21 0.65 17.5 0.13 24.84
0.9 0.26 0.60 22.6 0.12 22.86
1.0 0.27 0.55 27.0 0.12 22.39
1.9 0.42 0.55 49.4 0.11 18.77
2.0 0.43 0.54 51.7 0.11 18.42
2.4 0.50 0.45 61.5 0.10 17.14
3.0 0.59 0.40 78.1 0.09 15.50
3.9 0.73 0.26 111.9 0.07 13.62
5.0 0.92 0.21 172.5 0.06 12.05
5.8 1.04 0.24 -151.5 0.07 11.28
6.0 1.06 0.23 -144.5 0.08 11.12
7.0 1.22 0.28 -107.1 0.14 10.45
8.0 1.42 0.33 -75.5 0.24 9.84
9.0 1.57 0.43 -51.5 0.38 9.10
10.0 1.71 0.54 -33.3 0.57 8.03
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a
set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 2V, IDS = 10 mA
Figure 26. MSG/MAG and |S
21
|
2
vs.
Frequency at 2V, 10 mA.
MSG
|S
21
|
2
FREQUENCY (GHz)
MSG/MAG and |S21|2 (dB)
02010515
35
30
25
20
15
10
5
0
-5
-10
MAG
8
ATF-55143 Typical Scattering Parameters, VDS = 2V, IDS = 15 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.997 -7.1 22.33 13.074 174.4 0.006 85.7 0.752 -4.6 33.38
0.5 0.953 -34.5 21.82 12.333 153.0 0.027 69.4 0.712 -22.1 26.60
0.9 0.873 -58.8 20.86 11.042 134.4 0.044 56.3 0.654 -36.7 24.00
1.0 0.856 -64.6 20.58 10.693 130.3 0.047 53.3 0.636 -39.6 23.57
1.5 0.759 -89.3 19.14 9.059 112.2 0.060 41.6 0.560 -51.8 21.79
1.9 0.695 -106.2 18.06 7.998 100.0 0.068 34.4 0.509 -59.0 20.70
2.0 0.681 -110.2 17.8 7.762 97.2 0.070 32.8 0.498 -60.5 20.45
2.5 0.621 -129.3 16.62 6.773 83.9 0.076 25.6 0.443 -67.5 19.50
3.0 0.578 -147.4 15.54 5.985 71.8 0.082 19.4 0.390 -73.6 18.63
4.0 0.536 177.3 13.71 4.850 49.4 0.091 7.9 0.295 -87.3 17.27
5.0 0.541 145.1 12.09 4.020 28.4 0.096 -3.0 0.225 -104.3 16.22
6.0 0.554 119.1 10.59 3.384 9.0 0.101 -12.7 0.183 -120.8 13.89
7.0 0.574 97.0 9.3 2.917 -9.1 0.105 -23.0 0.150 -138.4 12.18
8.0 0.594 75.5 8.13 2.549 -27.0 0.106 -33.1 0.101 -149.7 10.73
9.0 0.63 55.9 7.12 2.271 -44.6 0.113 -40.4 0.047 -175.2 9.87
10.0 0.703 37.3 6.14 2.028 -63.5 0.121 -53.2 0.078 82.0 9.69
11.0 0.757 21.1 4.92 1.762 -81.7 0.123 -65.3 0.162 51.1 9.12
12.0 0.793 7.1 3.79 1.547 -98.5 0.125 -76.9 0.231 31.3 8.52
13.0 0.818 -8.2 2.77 1.376 -115.9 0.125 -89.5 0.275 12.8 7.92
14.0 0.841 -23.8 1.76 1.225 -134.3 0.125 -102.7 0.339 -5.5 7.38
15.0 0.863 -38.1 0.32 1.038 -152.5 0.118 -116.3 0.438 -21.0 6.54
16.0 0.856 -51.2 -1.29 0.862 -168.8 0.111 -128.0 0.524 -32.0 4.99
17.0 0.871 -60.2 -2.66 0.736 177.0 0.109 -138.6 0.586 -44.4 4.38
18.0 0.913 -70.4 -3.8 0.646 161.7 0.105 -151.9 0.636 -58.1 5.20
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.21 0.627 18.7 0.1 25.41
0.9 0.25 0.56 23.6 0.1 23.47
1.0 0.26 0.53 27.3 0.1 23.02
1.9 0.4 0.51 49.7 0.09 19.44
2.0 0.41 0.5 52.6 0.09 19.09
2.4 0.48 0.41 62.3 0.09 17.81
3.0 0.57 0.35 80.4 0.08 16.17
3.9 0.7 0.22 118.4 0.06 14.25
5.0 0.86 0.2 -176.5 0.06 12.6
5.8 0.99 0.23 -140.5 0.08 11.77
6.0 1.03 0.23 -134.6 0.08 11.6
7.0 1.16 0.29 -99.3 0.14 10.86
8.0 1.35 0.35 -69.3 0.25 10.22
9.0 1.49 0.43 -47.9 0.39 9.48
10.0 1.62 0.54 -30.8 0.57 8.47
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 2V, IDS = 15 mA
Figure 27. MSG/MAG and |S
21
|
2
vs.
Frequency at 2V, 15 mA.
MSG
FREQUENCY (GHz)
MSG/MAG and |S21|2 (dB)
02010515
40
35
30
25
20
15
10
5
0
-5
-10
|S
21
|
2
MAG
9
ATF-55143 Typical Scattering Parameters, VDS = 2V, IDS = 20 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.997 -7.5 23.23 14.512 174.2 0.006 85.5 0.722 -4.8 33.84
0.5 0.947 -36.2 22.66 13.582 151.8 0.026 69 0.679 -22.9 27.18
0.9 0.858 -61.3 21.59 12.011 132.8 0.041 56 0.618 -37.7 24.67
1.0 0.839 -67.2 21.29 11.602 128.6 0.044 53.2 0.599 -40.6 24.21
1.5 0.738 -92.4 19.74 9.703 110.4 0.056 42.1 0.523 -52.5 22.39
1.9 0.673 -109.4 18.59 8.5 98.3 0.063 35.5 0.474 -59.3 21.30
2.0 0.659 -113.5 18.32 8.238 95.5 0.065 34 0.463 -60.7 21.03
2.5 0.599 -132.6 17.07 7.135 82.4 0.071 27.5 0.411 -67.1 20.02
3.0 0.558 -150.6 15.95 6.272 70.5 0.077 21.8 0.361 -72.7 19.11
4.0 0.521 174.4 14.06 5.047 48.5 0.086 11.1 0.272 -85.6 17.69
5.0 0.531 142.8 12.40 4.171 28 0.093 0.7 0.205 -102.3 16.52
6.0 0.546 117.4 10.89 3.505 8.9 0.099 -9 0.166 -118.7 13.92
7.0 0.568 95.6 9.60 3.021 -9 0.104 -19.4 0.134 -136.5 12.35
8.0 0.588 74.4 8.42 2.637 -26.7 0.106 -29.8 0.086 -146.2 10.93
9.0 0.625 55.2 7.41 2.348 -44.1 0.115 -37.5 0.032 -171.2 10.11
10.0 0.699 36.8 6.43 2.097 -62.9 0.123 -50.7 0.077 71.3 9.93
11.0 0.754 20.9 5.21 1.823 -80.9 0.125 -63.2 0.165 46 9.35
12.0 0.791 6.9 4.08 1.60 -97.5 0.127 -75.1 0.235 27.6 8.75
13.0 0.818 -8.2 3.07 1.424 -114.7 0.128 -87.8 0.278 9.8 8.22
14.0 0.839 -23.8 2.07 1.269 -133.1 0.127 -101.4 0.340 -8.1 7.60
15.0 0.864 -38.1 0.65 1.078 -151 0.12 -114.9 0.440 -22.8 6.84
16.0 0.858 -51.1 -0.95 0.896 -167.3 0.113 -126.8 0.523 -33.4 5.28
17.0 0.873 -60.2 -2.30 0.768 178.6 0.111 -137.5 0.583 -45.6 4.68
18.0 0.917 -70.4 -3.41 0.675 163.4 0.106 -150.9 0.632 -59 5.62
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.21 0.63 18.4 0.1 25.67
0.9 0.25 0.54 24.4 0.09 23.78
1.0 0.26 0.53 28.8 0.09 23.34
1.9 0.39 0.49 50.6 0.09 19.84
2.0 0.4 0.47 52.8 0.09 19.5
2.4 0.48 0.38 63.6 0.08 18.24
3.0 0.56 0.32 82 0.07 16.61
3.9 0.69 0.2 125.1 0.06 14.67
5.0 0.85 0.2 -167.2 0.06 12.97
5.8 0.98 0.24 -133.4 0.08 12.09
6.0 1.02 0.24 -128.4 0.09 10.89
7.0 1.16 0.3 -94.8 0.15 11.12
8.0 1.34 0.36 -66.4 0.25 10.45
9.0 1.49 0.45 -45.7 0.4 9.73
10.0 1.62 0.55 -28.6 0.6 8.8
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 2V, IDS = 20 mA
Figure 28. MSG/MAG and |S
21
|
2
vs.
Frequency at 2V, 20 mA.
MSG
FREQUENCY (GHz)
MSG/MAG and |S21|2 (dB)
02010515
40
35
30
25
20
15
10
5
0
-5
-10
|S
21
|
2
MAG
10
ATF-55143 Typical Scattering Parameters, VDS = 2.7V, IDS = 10 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.998 -6.4 20.86 11.044 174.9 0.006 86.2 0.819 -3.9 32.65
0.5 0.963 -31.2 20.46 10.549 155 0.026 70.4 0.786 -19.1 26.08
0.9 0.896 -53.8 19.68 9.641 137.5 0.043 57.3 0.737 -32 23.51
1.0 0.881 -59.2 19.44 9.376 133.4 0.047 54.4 0.72 -34.7 23.00
1.5 0.794 -83 18.21 8.133 115.6 0.06 42.2 0.651 -46 21.32
1.9 0.732 -99.5 17.25 7.284 103.3 0.068 34.4 0.602 -52.9 20.30
2.0 0.718 -103.4 17.01 7.087 100.6 0.07 32.6 0.592 -54.5 20.05
2.5 0.655 -122.3 15.94 6.267 87.1 0.076 24.8 0.538 -61.3 19.16
3.0 0.608 -140.2 14.96 5.599 74.8 0.082 17.9 0.485 -67.3 18.34
4.0 0.553 -175.9 13.28 4.615 51.7 0.089 5.6 0.39 -80.1 17.15
5.0 0.548 150.9 11.74 3.862 30.2 0.092 -5.4 0.321 -94.7 16.23
6.0 0.556 123.9 10.30 3.272 10.3 0.094 -14.6 0.280 -109 14.17
7.0 0.573 100.9 9.04 2.83 -8.3 0.096 -23.9 0.247 -124.1 12.29
8.0 0.590 78.6 7.89 2.481 -26.5 0.096 -32.8 0.204 -134.3 10.78
9.0 0.625 58.4 6.94 2.224 -44.3 0.102 -38 0.152 -146.7 9.94
10.0 0.699 39.2 6.03 2.002 -63.6 0.112 -49.7 0.098 166.8 9.89
11.0 0.752 22.7 4.89 1.755 -82.3 0.115 -61.1 0.112 100 9.34
12.0 0.789 8.4 3.78 1.546 -99.8 0.12 -72.4 0.167 62.3 8.81
13.0 0.815 -7 2.78 1.378 -117.8 0.122 -84.7 0.211 37 8.23
14.0 0.838 -22.8 1.81 1.231 -137 0.124 -98.3 0.274 12.6 7.69
15.0 0.862 -37.2 0.37 1.044 -155.9 0.119 -111.8 0.387 -7.6 6.82
16.0 0.856 -50.5 -1.27 0.864 -173.3 0.113 -124.4 0.491 -21.5 5.15
17.0 0.872 -59.7 -2.73 0.730 171.9 0.111 -135.6 0.568 -35.9 5.54
18.0 0.915 -70 -3.96 0.634 156 0.107 -149.4 0.628 -51.2 5.68
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.2 0.64 19 0.12 25.29
0.9 0.26 0.59 22.7 0.12 23.24
1.0 0.27 0.54 26 0.12 22.76
1.9 0.39 0.54 48.3 0.11 19.01
2.0 0.4 0.54 49.9 0.11 18.66
2.4 0.48 0.45 59.8 0.1 17.35
3.0 0.57 0.39 75.6 0.09 15.69
3.9 0.72 0.26 108.7 0.07 13.79
5.0 0.88 0.2 167.5 0.06 12.26
5.8 1.02 0.22 -154.8 0.07 11.52
6.0 1.04 0.21 -147.8 0.08 11.37
7.0 1.19 0.26 -107.9 0.13 10.76
8.0 1.39 0.32 -75 0.23 10.2
9.0 1.54 0.41 -51.6 0.36 9.48
10.0 1.65 0.53 -33.6 0.54 8.38
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 2.7V, IDS = 10 mA
Figure 29. MSG/MAG and |S
21
|
2
vs.
Frequency at 2.7V, 10 mA.
MSG
|S
21
|
2
FREQUENCY (GHz)
MSG/MAG and |S21|2 (dB)
02010515
35
30
25
20
15
10
5
0
-5
-10
MAG
11
ATF-55143 Typical Scattering Parameters, VDS = 2.7V, IDS = 20 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.997 -7.4 23.29 14.603 174.2 0.005 85.8 0.755 -4.4 34.65
0.5 0.947 -35.8 22.72 13.682 152 0.024 69.2 0.713 -21.1 27.56
0.9 0.860 -60.8 21.67 12.116 133 0.038 56.2 0.652 -34.6 25.04
1.0 0.840 -66.6 21.37 11.705 128.8 0.041 53.4 0.633 -37.3 24.56
1.5 0.739 -91.7 19.83 9.802 110.6 0.051 42.4 0.56 -48 22.84
1.9 0.672 -108.6 18.68 8.587 98.5 0.057 36 0.513 -54 21.78
2.0 0.658 -112.7 18.41 8.323 95.8 0.059 34.5 0.503 -55.3 21.49
2.5 0.597 -131.7 17.16 7.21 82.7 0.065 28.4 0.455 -60.9 20.45
3.0 0.554 -149.7 16.04 6.341 70.9 0.069 23 0.409 -65.7 19.63
4.0 0.515 175.4 14.17 5.114 49.1 0.078 13.3 0.328 -76.7 18.17
5.0 0.523 143.7 12.55 4.239 28.6 0.084 3.7 0.267 -90.7 17.03
6.0 0.538 118.2 11.06 3.572 9.6 0.09 -5 0.232 -104.8 14.23
7.0 0.559 96.4 9.78 3.084 -8.4 0.095 -14.7 0.201 -119.6 12.69
8.0 0.579 75.2 8.62 2.699 -25.9 0.098 -24.2 0.162 -127.4 11.32
9.0 0.615 56 7.65 2.413 -43.3 0.107 -31 0.113 -136.5 10.53
10.0 0.690 37.7 6.73 2.171 -62.1 0.117 -44 0.055 160.9 10.46
11.0 0.748 21.7 5.57 1.9 -80.3 0.122 -56.4 0.096 75.9 10.01
12.0 0.787 7.9 4.48 1.675 -97.3 0.126 -68.5 0.164 45.5 9.48
13.0 0.816 -7.3 3.5 1.496 -114.9 0.128 -81.4 0.210 23.7 9.02
14.0 0.841 -22.9 2.55 1.341 -133.5 0.13 -95.1 0.277 3 8.56
15.0 0.867 -37.3 1.15 1.142 -152.1 0.124 -109.2 0.386 -14.3 7.65
16.0 0.862 -50.5 -0.44 0.95 -169 0.118 -121.9 0.483 -26.3 5.86
17.0 0.877 -59.7 -1.83 0.81 176.3 0.116 -133.3 0.555 -39.5 5.25
18.0 0.921 -70 -2.99 0.709 160.6 0.111 -147.1 0.612 -53.9 6.59
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.20 0.65 17.6 0.1 25.79
0.9 0.25 0.55 23.6 0.1 23.9
1.0 0.26 0.53 28.3 0.1 23.45
1.9 0.39 0.49 49 0.09 19.94
2.0 0.4 0.48 51.5 0.09 19.6
2.4 0.47 0.38 62 0.08 18.34
3.0 0.56 0.32 79.6 0.07 16.71
3.9 0.69 0.19 120 0.06 14.8
5.0 0.85 0.18 -168.8 0.06 13.14
5.8 0.98 0.22 -135.4 0.08 12.3
6.0 1.01 0.22 -128.7 0.09 12.12
7.0 1.15 0.29 -94.6 0.15 11.38
8.0 1.32 0.35 -66.7 0.25 10.74
9.0 1.47 0.44 -45.7 0.38 10.04
10.0 1.58 0.54 -28.6 0.57 9.1
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 2.7V, IDS = 20 mA
Figure 30. MSG/MAG and |S
21
|
2
vs.
Frequency at 2.7V, 20 mA.
MSG
|S
21
|
2
FREQUENCY (GHz)
MSG/MAG and |S21|2 (dB)
02010515
40
35
30
25
20
15
10
5
0
-5
MAG
12
ATF-55143 Typical Scattering Parameters, VDS = 3V, IDS = 20 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.998 -7.4 23.34 14.697 174.2 0.005 85.1 0.763 -4.3 34.68
0.5 0.947 -35.9 22.77 13.762 151.9 0.023 69.2 0.721 -20.6 27.77
0.9 0.859 -60.9 21.71 12.178 132.9 0.037 56.2 0.661 -33.8 25.17
1.0 0.839 -66.7 21.41 11.764 128.7 0.039 53.5 0.642 -36.3 24.79
1.5 0.738 -91.8 19.86 9.844 110.5 0.050 42.5 0.570 -46.7 22.94
1.9 0.671 -108.7 18.71 8.621 98.5 0.055 36.2 0.524 -52.5 21.95
2.0 0.657 -112.7 18.44 8.354 95.7 0.057 34.8 0.514 -53.7 21.66
2.5 0.595 -131.7 17.19 7.233 82.7 0.062 28.7 0.468 -59.1 20.67
3.0 0.552 -149.8 16.07 6.36 70.9 0.067 23.5 0.423 -63.8 19.77
4.0 0.513 175.4 14.2 5.13 49.1 0.075 14.2 0.345 -74.3 18.35
5.0 0.521 143.8 12.58 4.256 28.7 0.081 4.9 0.287 -87.7 16.82
6.0 0.536 118.3 11.1 3.588 9.7 0.087 -3.5 0.254 -101.6 14.32
7.0 0.557 96.5 9.83 3.1 -8.2 0.092 -12.9 0.224 -116.1 12.80
8.0 0.577 75.3 8.67 2.715 -25.8 0.095 -22.1 0.187 -124.3 11.44
9.0 0.613 56.2 7.71 2.43 -43.1 0.105 -28.7 0.140 -133.5 10.68
10.0 0.687 38 6.81 2.192 -61.8 0.116 -41.7 0.075 -178.8 10.67
11.0 0.746 22 5.67 1.922 -80.2 0.121 -54 0.084 94 10.24
12.0 0.787 8.1 4.59 1.697 -97.2 0.126 -66.1 0.145 54.4 9.82
13.0 0.816 -7 3.62 1.516 -114.9 0.128 -79.1 0.191 30 9.35
14.0 0.842 -22.6 2.67 1.36 -133.6 0.131 -93 0.256 8 9.01
15.0 0.869 -37 1.3 1.161 -152.3 0.126 -107.2 0.369 -10.9 8.04
16.0 0.863 -50.2 -0.29 0.967 -169.6 0.1200 -120.2 0.471 -23.5 6.10
17.0 0.879 -59.6 -1.7 0.822 175.6 0.118 -131.9 0.548 -37.3 5.47
18.0 0.924 -69.8 -2.87 0.719 159.7 0.113 -145.9 0.608 -52.2 7.40
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.18 0.63 17.6 0.1 25.89
0.9 0.24 0.54 23.4 0.1 23.98
1.0 0.25 0.53 27.9 0.1 23.53
1.9 0.39 0.48 48.4 0.09 20
2.0 0.4 0.47 51.6 0.09 19.66
2.4 0.47 0.39 61.9 0.08 18.4
3.0 0.56 0.32 78.7 0.07 16.77
3.9 0.68 0.19 119.8 0.06 14.85
5.0 0.85 0.19 -170.4 0.06 13.21
5.8 0.97 0.22 -135.1 0.08 12.37
6.0 1.01 0.22 -128.4 0.09 12.2
7.0 1.14 0.28 -94.7 0.14 11.47
8.0 1.31 0.35 -66.8 0.25 10.84
9.0 1.47 0.44 -45.6 0.38 10.15
10.0 1.59 0.54 -28.9 0.57 9.22
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 3V, IDS = 20 mA
Figure 31. MSG/MAG and |S
21
|
2
vs.
Frequency at 3V, 20 mA.
MSG
|S
21
|
2
FREQUENCY (GHz)
MSG/MAG and |S21|2 (dB)
02010515
40
35
30
25
20
15
10
5
0
-5
MAG
13
ATF-55143 Typical Scattering Parameters, VDS = 3V, IDS = 30 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.996 -7.9 24.3 16.407 173.9 0.005 85.6 0.729 -4.5 35.16
0.5 0.937 -38.1 23.64 15.205 150.4 0.021 68.8 0.683 -21.2 28.60
0.9 0.840 -64.1 22.44 13.246 130.9 0.034 56.1 0.620 -34.3 25.91
1.0 0.819 -70.1 22.11 12.753 126.6 0.036 53.5 0.601 -36.8 25.49
1.5 0.712 -95.7 20.43 10.507 108.4 0.046 43.4 0.531 -46.5 23.59
1.9 0.646 -112.8 19.2 9.117 96.4 0.051 37.7 0.488 -51.8 22.52
2.0 0.631 -116.8 18.91 8.823 93.7 0.052 36.6 0.479 -52.9 22.30
2.5 0.571 -135.8 17.59 7.578 80.9 0.057 31.3 0.437 -57.7 21.24
3.0 0.531 -153.9 16.42 6.625 69.4 0.062 26.6 0.398 -61.8 20.29
4.0 0.499 171.8 14.49 5.303 48.1 0.071 18.1 0.328 -71.6 18.73
5.0 0.512 140.9 12.84 4.386 28.1 0.078 9.2 0.273 -84.7 16.32
6.0 0.529 116 11.35 3.693 9.4 0.085 0.7 0.242 -98.5 14.36
7.0 0.552 94.7 10.07 3.188 -8.3 0.092 -9 0.214 -112.9 12.98
8.0 0.573 73.9 8.91 2.79 -25.6 0.096 -18.6 0.179 -120.5 11.65
9.0 0.609 55.1 7.94 2.496 -42.7 0.107 -25.8 0.134 -128.4 10.92
10.0 0.684 37.3 7.05 2.251 -61.3 0.118 -39.2 0.064 -173.3 10.93
11.0 0.744 21.6 5.91 1.975 -79.5 0.123 -51.9 0.075 87.5 10.53
12.0 0.786 7.9 4.83 1.744 -96.4 0.128 -64.3 0.141 49.7 10.16
13.0 0.816 -7.2 3.86 1.56 -113.9 0.131 -77.5 0.187 26.4 9.84
14.0 0.842 -22.8 2.93 1.401 -132.6 0.133 -91.7 0.250 5.1 9.51
15.0 0.870 -37.1 1.56 1.197 -151.1 0.128 -106 0.367 -12.6 8.39
16.0 0.866 -50.3 -0.01 0.998 -168.2 0.122 -119.1 0.467 -24.8 6.39
17.0 0.882 -59.7 -1.4 0.851 177 0.12 -130.8 0.543 -38.2 5.77
18.0 0.927 -69.9 -2.55 0.746 161.2 0.115 -144.8 0.602 -52.8 8.12
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.19 0.59 18.4 0.09 26.27
0.9 0.25 0.5 25.5 0.09 24.41
1.0 0.26 0.52 30.7 0.09 23.98
1.9 0.41 0.44 50.6 0.08 20.51
2.0 0.42 0.43 54.5 0.08 20.18
2.4 0.49 0.34 65.1 0.08 18.92
3.0 0.59 0.27 84.7 0.07 17.28
3.9 0.72 0.17 132.6 0.06 15.33
5.0 0.88 0.19 -156.2 0.06 13.61
5.8 1.02 0.24 -125.3 0.09 12.71
6.0 1.06 0.25 -118.8 0.1 12.52
7.0 1.2 0.32 -88.8 0.17 11.73
8.0 1.37 0.39 -62.7 0.28 11.08
9.0 1.53 0.47 -43.1 0.43 10.41
10.0 1.66 0.57 -27 0.65 9.58
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 3V, IDS = 30 mA
Figure 32. MSG/MAG and |S
21
|
2
vs.
Frequency at 3V, 30 mA.
MSG
|S
21
|
2
FREQUENCY (GHz)
MSG/MAG and |S21|2 (dB)
02010515
40
35
30
25
20
15
10
5
0
-5
MAG
14
ATF-55143 Applications Information
Introduction
Avago Technologies’ ATF-55143 is a low noise
enhancement mode PHEMT designed for use in low cost
commercial applications in the VHF through 6 GHz fre-
quency range. As opposed to a typical depletion mode
PHEMT where the gate must be made negative with
respect to the source for proper operation, an enhance-
ment mode PHEMT requires that the gate be made more
positive than the source for normal operation. Therefore
a negative power supply voltage is not required for an
enhancement mode device. Biasing an enhancement
mode PHEMT is much like biasing the typical bipolar
junction transistor. Instead of a 0.7 V base to emitter volt-
age, the ATF-55143 enhancement mode PHEMT requires
about a 0.47V potential between the gate and source for
a nominal drain current of 10 mA.
Matching Networks
The techniques for impedance matching an enhance-
ment mode device are very similar to those for matching
a depletion mode device. The only di erence is in the
method of supplying gate bias. S and Noise Parameters
for various bias conditions are listed in this data sheet.
The circuit shown in Figure 33 shows a typical LNA cir-
cuit normally used for 900 and 1900 MHz applications
(Consult the Avago Technologies website for application
notes covering speci c applications). High pass imped-
ance matching networks consisting of L1/C1 and L4/C4
provide the appropriate match for noise gure, gain, S11
and S22. The high pass structure also provides low fre-
quency gain reduction which can be bene cial from the
standpoint of improving out-of-band rejection.
INPUT C1
C2
C3
L1
R4
R1 R2
Vdd
R3
L2 L3
L4
Q1
Zo Zo
C4
C5
C6
OUTPUT
R5
Figure 33. Typical ATF-55143 LNA with Passive Biasing.
Capacitors C2 and C5 provide a low impedance in-band
RF bypass for the matching networks. Resistors R3 and
R4 provide a very important low frequency termination
for the device. The resistive termination improves low
frequency stability. Capacitors C3 and C6 provide the
low frequency RF bypass for resistors R3 and R4. Their
value should be chosen carefully as C3 and C6 also pro-
vide a termination for low frequency mixing products.
These mixing products are as a result of two or more in-
band signals mixing and producing third order in-band
distortion products. The low frequency or difference
mixing products are terminated by C3 and C6. For best
suppression of third order distortion products based on
the CDMA 1.25 MHz signal spacing, C3 and C6 should
be 0.1 μF in value. Smaller values of capacitance will
not suppress the generation of the 1.25 MHz di erence
signal and as a result will show up as poorer two tone
IP3 results.
Bias Networks
One of the major advantages of the enhancement
mode technology is that it allows the designer to be
able to dc ground the source leads and then merely
apply a positive voltage on the gate to set the desired
amount of quiescent drain current Id.
Whereas a depletion mode PHEMT pulls maximum
drain current when Vgs = 0V, an enhancement mode
PHEMT pulls only a small amount of leakage current
when Vgs= 0V. Only when Vgs is increased above Vth, the
device threshold voltage, will drain current start to ow.
At a Vds of 2.7V and a nominal Vgs of 0.47 V, the drain
current Id will be approximately 10 mA. The data sheet
suggests a minimum and maximum Vgs over which the
desired amount of drain current will be achieved. It is
also important to note that if the gate terminal is left
open circuited, the device will pull some amount of
drain current due to leakage current creating a voltage
di erential between the gate and source terminals.
Passive Biasing
Passive biasing of the ATF-55143 is accomplished by
the use of a voltage divider consisting of R1 and R2. The
voltage for the divider is derived from the drain voltage
which provides a form of voltage feedback through the
use of R3 to help keep drain current constant. Resis-
tor R5 (approximately 10kΩ) is added to limit the gate
current of enhancement mode devices such as the
ATF-55143. This is especially important when the device
is driven to P1dB or PSAT.
Resistor R3 is calculated based on desired Vds, Ids and
available power supply voltage.
R3 = VDD – Vds (1)
p
Ids + IBB
VDD is the power supply voltage.
Vds is the device drain to source voltage.
Ids is the desired drain current.
IBB is the current owing through the R1/R2 resistor volt-
age divider network.
15
The values of resistors R1 and R2 are calculated with the
following formulas
R1 = Vgs (2)
p
IBB
R2 = (Vds – Vgs) R1 (3)
p
Vgs
Example Circuit
VDD = 3V
Vds = 2.7V
Ids = 10 mA
Vgs = 0.47 V
Choose IBB to be at least 10X the normal expected gate
leakage current. IBB was conservatively chosen to be
0.5 mA for this example. Using equations (1), (2), and (3)
the resistors are calculated as follows
R1 = 940Ω
R2 = 4460Ω
R3 = 28.6Ω
Active Biasing
Active biasing provides a means of keeping the quies-
cent bias point constant over temperature and constant
over lot to lot variations in device dc performance. The
advantage of the active biasing of an enhancement
mode PHEMT versus a depletion mode PHEMT is that a
negative power source is not required. The techniques
of active biasing an enhancement mode device are very
similar to those used to bias a bipolar junction transis-
tor.
INPUT C1
C2
C3
C7
L1
R5
R6
R7 R3
R2
R1
Q2 Vdd
R4
L2 L3
L4
Q1
Zo Zo
C4
C5
C6
OUTPUT
Figure 34. Typical ATF-55143 LNA with Active Biasing.
An active bias scheme is shown in Figure 34. R1 and R2
provide a constant voltage source at the base of a PNP
transistor at Q2. The constant voltage at the base of Q2
is raised by 0.7 volts at the emitter. The constant emitter
voltage plus the regulated VDD supply are present across
resistor R3. Constant voltage across R3 provides a con-
stant current supply for the drain current. Resistors R1
and R2 are used to set the desired Vds. The combined
series value of these resistors also sets the amount of
extra current consumed by the bias network. The equa-
tions that describe the circuit’s operation are as follows.
VE = Vds + (Ids • R4) (1)
R3 = VDD – VE (2)
p
Ids
VB = VE – VBE (3)
VB = R1 VDD (4)
p
R1 + R2
VDD = IBB (R1 + R2) (5)
Rearranging equation (4) provides the following for-
mula
R2 = R1 (VDD – VB) (4A)
VB
and rearranging equation (5) provides the following
formula
R1 = VDD (5A)
9
IBB (1 + VDD – VB )
p
VB
Example Circuit
VDD = 3V IBB = 0.5 mA
Vds = 2.7V
Ids = 10 mA
R4 = 10Ω
VBE = 0.7V
Equation (1) calculates the required voltage at the emit-
ter of the PNP transistor based on desired Vds and Ids
through resistor R4 to be 2.8V. Equation (2) calculates
the value of resistor R3 which determines the drain cur-
rent Ids. In the example R3= 20Ω. Equation (3) calculates
the voltage required at the junction of resistors R1 and
R2. This voltage plus the step-up of the base emitter
junction determines the regulated Vds. Equations (4) and
(5) are solved simultaneously to determine the value
of resistors R1 and R2. In the example R1=4200Ω and
R2=1800Ω. R7 is chosen to be 1kΩ. This resistor keeps
a small amount of current owing through Q2 to help
maintain bias stability. R6 is chosen to be 10kΩ. This
value of resistance is necessary to limit Q1 gate current
in the presence of high RF drive levels (especially when
Q1 is driven to the P1dB gain compression point). C7
provides a low frequency bypass to keep noise from Q2
e ecting the operation of Q1. C7 is typically 0.1 μF.
16
ATF-55143 Die Model
NFET=yes
PFET=no
Vto=0.3
Beta=0.444
Lambda=72e-3
Alpha=13
Tau=
Tnom=16.85
Idstc=
Ucrit=-0.72
Vgexp=1.91
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.5 Ohm
Rf=
Gscap=2
Cgs=0.6193 pF
Cgd=0.1435 pF
Gdcap=2
Fc=0.65
Rgd=0.5 Ohm
Rd=2.025 Ohm
Rg=1.7 Ohm
Rs=0.675 Ohm
Ld=
Lg=0.094 nH
Ls=
Cds=0.100 pF
Rc=390 Ohm
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.95
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
Eg=
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
Advanced_Curtice2_Model
MESFETM1
GATE
SOURCE
INSIDE Package
Port
G
Num=1
C
C1
C=0.143 pF
Port
S1
Num=2
SOURCE
DRAIN
Port
S2
Num=4
Port
D
Num=3
L
L6
L=0.205 nH
R=0.001
C
C2
C=0.115 pF
L
L7
L=0.778 nH
R=0.001
MSub
TLINP
TL4
Z=Z1 Ohm
L=15 mil
K=1
TLINP
TL10
Z=Z1 Ohm
L=15 mil
K=1
TLINP
TL3
Z=Z2 Ohm
L=25 mil
K=K
TLINP
TL9
Z=Z2 Ohm
L=10.0 mil
K=K
VAR
VAR1
K=5
Z2=85
Z1=30
Var
Egn
TLINP
TL1
Z=Z2/2 Ohm
L=20 0 mil
K=K
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
TLINP
TL8
Z=Z1 Ohm
L=15.0 mil
K=1
TLINP
TL7
Z=Z2/2 Ohm
L=5.0 mil
K=K
TLINP
TL5
Z=Z2 Ohm
L=26.0 mil
K=K
TLINP
TL6
Z=Z1 Ohm
L=15.0 mil
K=1
L
L1
L=0.621 nH
R=0.001
L
L4
L=0.238 nH
R=0.001
GaAsFET
FET1
Mode1=MESFETM1
Mode=Nonlinear
MSUB
MSub1
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
ATF-55143 ADS Package Model
17
Figure 35. Adding Vias to the ATF-55143 Non-Linear Model for Comparison to Measured S and Noise Parameters.
Designing with S and Noise Parameters and the Non-Lin-
ear Model
The non-linear model describing the ATF-55143 in-
cludes both the die and associated package model.
The package model includes the e ect of the pins but
does not include the effect of the additional source
inductance associated with grounding the source leads
through the printed circuit board. The device S and
Noise Parameters do include the effect of 0.020 inch
thickness printed circuit board vias. When comparing
simulation results between the measured S parameters
and the simulated non-linear model, be sure to include
the e ect of the printed circuit board to get an accurate
comparison. This is shown schematically in Figure 35.
For Further Information
The information presented here is an introduction to the
use of the ATF-55143 enhancement mode PHEMT. More
detailed application circuit information is available from
Avago Technologies. Consult the web page or your local
Avago Technologies sales representative.
DRAIN
VIA2
V1
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
VIA2
V2
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
VIA2
V4
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
SOURCE
GATESOURCE
ATF-55143
MSUB
MSub1
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
MSub
VIA2
V3
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
18
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on measure-
ments while the Fmins below 2 GHz have been extrapo-
lated. The Fmin values are based on a set of 16 noise
gure measurements made at 16 di erent impedances
using an ATN NP5 test system. From these measure-
ments, a true Fmin is calculated. Fmin represents the true
minimum noise gure of the device when the device is
presented with an impedance matching network that
transforms the source impedance, typically 50Ω, to an
impedance represented by the re ection coe cient o.
The designer must design a matching network that will
present o to the device with minimal associated circuit
losses. The noise gure of the completed ampli er is
equal to the noise gure of the device plus the losses of
the matching network preceding the device. The noise
gure of the device is equal to Fmin only when the device
is presented with o. If the re ection coe cient of the
matching network is other than o, then the noise g-
ure of the device will be greater than Fmin based on the
following equation.
NF = Fmin + 4 Rn |s – o | 2
Zo (|1 + o|2)(1 -|s|2)
Where Rn/Zo is the normalized noise resistance, o is
the optimum re ection coe cient required to produce
Fmin and s is the reflection coefficient of the source
impedance actually presented to the device. The losses
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higher ampli er noise gure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. o is typically fairly
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower o as compared to narrower gate width devices.
Typically for FETs, the higher o usually infers that an
impedance much higher than 50Ω is required for the
device to produce Fmin. At VHF frequencies and even
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching
to such a high impedance requires very hi-Q compo-
nents in order to minimize circuit losses. As an example
at 900 MHz, when airwound coils (Q > 100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise gure of the device.
Using multilayer molded inductors with Qs in the 30 to
50 range results in additional loss over the airwound
coil. Losses as high as 0.5 dB or greater add to the typi-
cal 0.15 dB Fmin of the device creating an ampli er noise
gure of nearly 0.65 dB. A discussion concerning cal-
culated and measured circuit losses and their e ect on
ampli er noise gure is covered in Avago Technologies
Application 1085.
19
Ordering Information
Part Number No. of Devices Container
ATF-55143-TR1G 3000 7” Reel
ATF-55143-TR2G 10000 13”Reel
ATF-55143-BLKG 100 antistatic bag
Package Dimensions Outline 43
(SOT-343/SC70 lead)
HE
D
A2
A1
b
b1
E
1.30 (.051)
BSC
1.15 (.045) BSC
C
L
A
DIMENSIONS (mm)
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.15
0.55
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
SYMBOL
E
D
HE
A
A2
A1
b
b1
c
L
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold ash & metal burr.
4. All specications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror nish.
Recommended PCB Pad Layout for
Avago's SC70 4L/SOT-343 Products
1.30
(0.051)
0.60
(0.024)
0.9
(0.035)
Dimensions in mm
(inches)
1.15
(0.045)
2.00
(0.079)
1.00
(0.039)
Tape Dimensions For Outline 4T
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3750EN
AV02-0923EN - June 8, 2012
PPoP2
F
W
C
D1
D
E
Ao
10 MAX.
t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
10 MAX.
Bo
Ko
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
Ao
Bo
Ko
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
Po
E
1.55 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 0.02
0.315 + 0.012
0.0100 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
COVER TAPE
Device Orientation
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
5Fx 5Fx
5Fx5Fx
