This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington Unit: mm 10.00.2 5.50.2 Collector-base voltage 2SD1275 (Emitter open) 2SD1275A VCBO VCEO Emitter-base voltage (Collector open) VEBO ICP TC = 25C Collector power 60 V 60 4.20.2 V 80 IC Peak collector current Unit PC dissipation 2.540.3 Tj Storage temperature Tstg 5.080.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 5 V 2 A 4 A 35 W Internal Connection 2.0 Junction temperature C B 150 C -55 to +150 C E Electrical Characteristics Ta = 25C 3C Symbol 2SD1275 Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) en int Ma Forward current transfer ratio Collector-emitter saturation voltage Max 60 Unit V 80 VCE = 4 V, IC = 2 A 2.8 V VCB = 60 V, IE = 0 1 mA VCB = 80 V, IE = 0 1 ICEO VCE = 30 V, IB = 0 2 VCE = 40 V, IB = 0 2 IEBO VEB = 5 V, IC = 0 2 2SD1275A Emitter-base cutoff current (Collector open) Typ VBE 2SD1275A 2SD1275 Min ICBO an Collector-emitter cutoff current (Base open) 2SD1275 Conditions IC = 30 mA, IB = 0 VCEO ce /D isc on tin Base-emitter voltage 2SD1275A ue Parameter 0.5+0.2 -0.1 0.80.1 80 Collector-emitter voltage 2SD1275 (Base open) 2SD1275A Collector current Rating 14.00.5 Symbol di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Parameter 1.30.2 1.40.1 Solder Dip (4.0) Absolute Maximum Ratings Ta = 25C 2.70.2 3.10.1 M Di ain sc te on na tin nc ue e/ d * High forward current transfer ratio hFE * High-speed switching * Full-pack package which can be installed to the heat sink with one screw 4.20.2 7.50.2 Features 16.70.3 0.70.1 For power amplification Complementary to 2SB0949 and 2SB0949A hFE1 VCE = 4 V, IC = 1 A 1 000 hFE2 * VCE = 4 V, IC = 2 A 1 000 VCE(sat) IC = 2 A, IB = 8 mA mA mA 10 000 2.5 V fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 2 A, IB1 = 8 mA, IB2 = -8 mA, 0.5 s Storage time tstg VCC = 50 V 4.0 s 1.0 s Transition frequency Fall time tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R hFE2 1 000 to 2 500 Publication date: February 2003 Q P 2 000 to 5 000 4 000 to 10 000 SJD00189BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1275, 2SD1275A PC Ta IC VCE IC VBE 5 (1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)With a 50x50x2mm Al heat sink (4)Without heat sink (PC=2W) VCE=4V 4 30 20 8 Collector current IC (A) (1) TC=25C Collector current IC (A) 40 10 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 3 2 25C TC=100C (2) 10 4 80 120 0 160 100 Forward current transfer ratio hFE 100C 0.1 1 10 an Thermal resistance Rth (C/W) en int Ma t=10ms t=1ms 1 DC 1 10 2SD1275A 2SD1275 0.1 0.01 100 0 103 1 000 25C -25C 102 0.1 1 0.8 1.6 2.4 10 Cob VCB 104 IE=0 f=1MHz TC=25C 103 102 10 1 0.1 Collector current IC (A) 1 10 100 Collector-base voltage VCB (V) Rth t (1)Without heat sink (2)With a 100x100x2mm Al heat sink 102 (1) (2) 10 1 10-1 10-2 10-4 10-3 10-2 10-1 1 Time t (s) Collector-emitter voltage VCE (V) SJD00189BED 3.2 Base-emitter voltage VBE (V) 103 Non repetitive pulse TC=25C IC 0 6 TC=100C 10 0.01 Safe operation area ICP 5 104 ce /D isc on tin Collector current IC (A) 10 4 VCE=4V ue TC=-25C 100 3 hFE IC 25C 0.1 2 105 10 0.01 0.01 1 Collector-emitter voltage VCE (V) IC/IB=250 1 0 Collector output capacitance C (pF) (Common base, input open circuited) ob 40 VCE(sat) IC 2 2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 Ambient temperature Ta (C) Collector-emitter saturation voltage VCE(sat) (V) 0.2mA 1 (3) (4) 0 Collector current IC (A) 0.4mA -25C 6 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) 50 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.